This is my presentaion slides for STM05/ICSPM13 in July 5, 2005.
Carbon Multi-probes on a Si Cantilever for Pseudo-MOSFET
M. Nagase, K. Nakamatsu, S. Matsui, and H. Namatsu
STM05/ICSPM13(13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, 13th International Colloquium on Scanning Probe Microscopy, July 3-8, 2005, Sapporo Convention Center, Sapporo, Japan)
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Contents
-Background of study-
Introduction
Nanotools
Four-point-probe with nano-springs on a Si cantilever grown using focused-ion-bem chemical-vapor-deposition
Carbon spring in motion
-Experimental Setup-
FET probe for semiconductor film
-Results-
Pseudo-MOSFET characteristics of SOI
Drain voltage dependence of pseudo-MOS characteristics
Applications of pseudo-FET probe
FET characteristics of ECR sputtered carbon film
-SUMMARY-
Summary
If you have any question or comment, please mail to nagase
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upload :2005/7/27
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