International Conferences

• H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, and H. Satoh:
  A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs
  The 6-th annual International Conference on Global Research and Education (inter-Academia, September 25 – 28, 2007, Hamamatsu), to be presented.
• Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, and A. Fujiwara: (invited)
  Charge Transport in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics
  Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI - V, November 12 - 14, Tokyo), to be presented.
• A. Fujiwara, K. Nishiguchi, and Y. Ono:
  Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
  2007 International Conference on Solid State Devices and Materials (SSDM-2007, September 18-21, Tsukuba), to be presented. .
• M. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara:
  Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors
  2007 International Conference on Solid State Devices and Materials (SSDM-2007, September 18-21, Tsukuba), to be presented.
• H. Inokawa, A. Fujiwara, K. Nishiguchi and Y. Ono:
  Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
  2007 International Conference on Solid State Devices and Materials (SSDM-2007, September 18-21, Tsukuba), to be presented.
• A. Fujiwara, K. Nishiguchi, and Y. Ono:
  Single-electron ratchet using silicon nanowie MOSFET
  International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17 + 13 MSS, 5-20 July, 2007, Genova Magazzini del Cotone, Italy),
  MSS13 Abstract Book, pp. 215 – 217.
• S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta:
  Theoretical study on magnetic properties of manganese nanosilicide in silicon
  17th International Vacuum Congress (IVC-17, joint with ICSS-13 and ICN+T2007, July 2 - 6, 2007, Stockholm, Sweden), Final program, p. 55, NSP1 - 118.
• D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe:
  Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays
  2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto),
  Workshop Abstract, pp. 161- 162.
• Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, S. Horiguchi, H. Inokawa, and Y. Takahashi:
  Dopant-mediated charge transport in boron-doped nano MOSFETs
  2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto),
  Workshop Abstract, pp. 159- 160.
• S. Yabuuchi, Y. Ono, M. Nagase, H. Kageshima, A. Fujiwara, E. Ohta:
  Magnetic properties of manganese nanosilicide in silicon
  2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto),
  Workshop Abstract, pp. 177- 178.
• T. Kaizawa, M. Arita, A. Fujiwara1, K. Yamazaki1, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi:
  Single-electron device using Si nanodot array and multi-input gates
  2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto),
  Workshop Abstract, pp. 171- 172.
• H.W. Liu, T. Fujisawa, Y. Ono, A. Fujiwara, H. Inokawa, K. Takashina, and Y. Hirayama:
  Electron transport through single and double quantum dots in silicon MOS structures
  2007 Frontiers in Nanoscale Science and Technology Workshop (FNST2007, March 29 - 31, 2007, University of Tokyo, Tokyo)

• Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, K. Hiratsuka, S. Horiguchi, H. Inokawa, and Y. Takahashi:
  Hopping conduction in buried-channel SOI MOSFETs with shallow impurities
  International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2007, February 20 - 23, 2007, Atsugi, Kanagawa). Program & Abstract p. 161.
• H. Inokawa , K. Nishiguchi, Y. Ono, A. Fujiwara, and Y. Takahashi:(invited)
  Recent progress in integration of silicon single-electron devices.
  The 4th International Workshop on Ubiquitous Knowledge Network Environment (March 5 - 7, 2007, Sapporo, Japan) Abstract, p. 15.
• T. Kaizawa, M. Arita, A. Fujiwara1, K. Yamazaki1, Y. Ono, H. Inokawa, and Yasuo Takahashi:
  Single-electron device using Si nanodot array and multi-input gates
  8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006, Oct. 23-26, 2006, Shanghai, China), Technical program, D3-7.
• H. Inokawa, K. Nishiguchi, A. Fujiwara, Y. Ono,Y. Takahashi, and H. Yamaguchi:
  Metal-Oxide-Semiconductor-Based Single-Electronics
  The 5-th annual International Conference on Global Research and Education (inter-Academia, September 25 – 28, 2006, Iasi, Romania), Abstract pp. 175 – 184.
• D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda1, and M. Tabe:
  Towards single-electron pump operation using one ac gate bias in doped Si nanowires
  The 5-th annual International Conference on Global Research and Education (inter-Academia, September 5 – 28, 2006, Iasi, Romania), Abstract pp. 373 - 380
• D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda and M. Tabe:
  Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires
  2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama) Extended Abstracts, pp. 820-821.
• K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
  Infrared detection with silicon nano transistors.
  2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama), Extended Abstracts, pp. 10-11.
• T. Goto, H. Inokawa, K. Sumitmo, M. Nagase, Y. Ono, and K. Torimitsu:
  Effect of UV/ozone treatment on nanogap electrodes for molecular devices
  2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama), Extended Abstracts, pp. 912-913.
• K. Takashina, B. Gaillard, Y. Ono, and Y. Hirayama:
  Low temperature characteristics of ambipolar SiO₂/Si/SiO₂ Hall-bar Devices
  2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama), Extended Abstracts, pp. 830-831.
• S. Suzuki, K. Kanzaki, Y. Ono, H. Inokawa, A. Vijayaraghavan, and Y. Kobayashi:
  Mechanism of metal-semiconductor transition in the electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation.
  2006 nanotube (Nanotube06, Nagano, July 24 -28 2006). Workshop abstract, G.007, p.405.
• K. Takashina, Marc-Aur` ele Brun, T. Ota, D. Maude, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Hirayama:
  Resistance Ridges Along Filling Factor v = 4i in SiO₂/Si/SiO₂ Quantum Wells.
  2006 International Conference on Physics of Semiconductors
  (ICPS-2006, Vienna, Austria, July 24 -28 2006). TuA1c.7, Workshop abstract, pp. 50-51.
• W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu:
  Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors
  Asia-Pacific 2006 Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  (AWAD-2006, July 3-5, Sendai). Workshop abstract, pp. 249-253.
• K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
  Long-retention gain-cell DRAM using undoped SOI MOSFET.
  2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA).
  Workshop abstract, pp. 101-102.

• K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
  Room-temperature operation of data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect-transistor technology.
  2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA).
  Workshop abstract, pp. 23-24.
• Y. Ono, K. Nishiguchi, K. Takashina, H. Inokawa, S. Horiguchi, andY. Takahashi: (invited)
  Impurity conduction and its control in phosphorus-doped SOI MOSFET.
  2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA).
  Workshop abstract, pp. 111-112.
• H. W. Liu, T. Fujisawa, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Hirayama:
  Resonant tunneling transport through silicon double quantum dot
  International Conference Nanoscience and Technology (ICNT 2006, July 30-August 4, Basel, Switzerland), Abstract pp.5
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Single-electron transfer in silicon.
  The 3rd International Workshop on Ubiquitous Knowledge Network Environment (February 27 – March 1, 2006, Sapporo, Japan), Abstract, p. 15.
• K. Takashina, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi and Y. Hirayama
  Control of valley-splitting in silicon-on-insulator MOSFET's.
  2006 Frontiers in Nanoscale Science and Technology (FNST, January 26-28, San Francisco, USA)
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Single-electron transfer in silicon.
  2005 International Workshop on the Physics semiconductor devices (IWPSD, December 13-17, 2005, New Delhi, India)
• Y. Ono: (invited)
  Single-electron manipulation in silicon; Towards single-dopant electronics.
  7th International Conference on New Phenomena in Mesoscopic Structures and 5th International Conference on Surfaces and Interfaces of Mesoscopic Devices (NPMS-7/SIMD-5, November 27 – December 2, 2005, Maui, USA) Abstract, p. 29.
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Single-electron manipulation Interplay with crystalline imperfection.
  2nd International Symposium on Point Defect and Nonstoichiometry (ISPN-2, October 4-6, 2005, Kaoshiung, Taiwan) Session Th-A2-1
  Final program and Abstract book, p. 20.
• H. Inokawa, Y. Ono, A. Fujiwara, K. Nishiguchi, and Y. Takahashi: (invited)
  Single-Electron Devices and Circuits fabricated by MOS Processes,
  2005 Tera-level nanodevices (TND) Technical Forum (TND 2005 October 6– 7, Korea).
• N. Clement, H. Inokawa, and Y. Ono:
  Studies on MOSFET low-frequency noise for electrometer applications,
  2005 International Conference on Solid State Devices and Materials (SSDM-2005, September 12-15, Kobe),
  Extended abstract, pp. 176-177.
• K. Kanzaki, S. Suzuki, Y. Kobayashi, Y. Ono, and H.Inokawa:
  Control of electrical properties of single-walled carbon nanotubes by low-energy electron irradiation
  2005 International Conference on Solid State Devices and Materials (SSDM-2005, September 12-15, Kobe),
  Extended abstract, pp. 772-773.
• K. Kanzaki, A. Vijayaraghavan, S. Suzuki, Y. Kobayashi, H. Inokawa, and Y. Ono:
  Conductivity control of single-walled carbon nanotubes by electron beam exposure,
  Sixth International Conference on the Science and Application of Nanotubes (NT05, June 26 – July 1, 2005, Gothenburg, Sweden)
  Session, Poster XIX.6, abstract p. 389.
• K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama: (invited)
  Control of valley and spatial subbands in double-gate MOSFETs –Electronic states in a silicon quantum well
  2005 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD-2005, June 28-30, Seoul, Korea),
  Workshop abstract, pp. 39-42.

• K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
  Intersubband scattering in double-gate SOI MOSFETs
  2005 Silicon Nanoelectronics Workshop (SNW-2005, June 12-13, Kyoto).
  Workshop abstract, pp. 4-5.
• K. Nishiguchi, O. Clauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi:
  Back-gate effect on Coulomb blockade in SOI trench wires,
  2005 Silicon Nanoelectronics Workshop (SNW-2005, June 12-13, Kyoto).
  Workshop abstract, pp. 84-85.
• M. Nagase, Y. Ishikawa, Y. Ono, and M. Tabe:
  Imaging of nano-scale embedded dislocation network in Si bicrystal,
  2005 Silicon Nanoelectronics Workshop (SNW-2005, June 12-13, Kyoto).
  Workshop abstract, pp. 108-109.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (invited):
  Silicon-based single-electron devices
  Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4, May 23-26, 2005, Awaji Island, Hyogo)
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa (invited):
  Silicon single-electron pump and turnstile; Interplay with crystalline imperfection.
  2005 Material Research Society Spring Meeting (2005 MRS Spring meeting, March 28 – April 1, 2005, San Francisco, CA, USA) Session E6.7.
• Y. Ishikawa, K. Yamauchi, R. Nuryadi, H. Ikeda, M. Tabe, Y. Ono and M. Nagase:
  Conductivity enhancement in thin silicon-on-insulator layer embedding artificial dislocation network.
  2005 Material Research Society Spring Meeting (2005 MRS Spring meeting, March 28 – April 1, 2005, San Francisco, CA, USA) Session E6.5.
• K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
  Room- temperature single-electron transfer and detection with silicon nanodevices
  IEEE International Electron Devices Meeting (IEDM-04, December 13 – 15, 2004, San Francisco, USA).
  Technical digest, pp. 199 – 202.
• Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
  Room- and low-temperature characteristics of phosphorus-doped SOI MOSFET
  International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2005, January 30 – February 2, 2005, Atsugi, Kanagawa). Program&Abstract p. 19.
  Session MO-10, Program & Abstract p. 19.
• N. M. Zimmerman, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi, and E. Hourdakis (invited):
  The physics of Coulomb blockade in tunable barrier Si wires
  International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2005, January 30 – February 2, 2005, Atsugi, Kanagawa). Program&Abstract p. 21.
  Session MO-11, Program & Abstract p. 21.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (invited):
  Single-electron device applications using their special functionarity
  The sixth international conference on nano-molecular electronics (ICMNE-2004, December 15-17, 2004, Kobe, Japan).
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (invited):
  Application of silicon single-electron devices,
  First annual meeting on the fusion of biotechnology, nanotechnology, and semiconductor technology (FBNS2004, October 7-8, 2004, Kyoto, Japan).
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (invited):
  Silicon single-electron devices and their applications,
  2004 The 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2004, October 18-21, 2004, Beijing, China).
  Session C1, Nanotube technology and tunneling deivces. Proceedings, C1.3.

• Y. Ono (invited):
  Single-electron transistor and its logic applications,
  ITRS Emerging research logic devices workshop (ERD2004, September 24, 2004, Leuven, Belgium).
• Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
  Charge-state control of phosphorus donors in SOI MOSFET,
  2004 International Conference on Solid State Devices and Materials (SSDM-2004, September 15-17, Tokyo).
  Extended abstract, pp. 132-133.
• Y. Ishikawa, K. Yamauchi, H. Ikeda, Y. Ono, M. Nagase, M. Tabe:
  Formation of nanometer-scale dislocation network sandwiched by silicon-on-insulator layers
  2004 International Conference on Solid State Devices and Materials (SSDM-2004, September 15-17, Tokyo)
  Extended Abstracts, pp. 336-337.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (invited):
  Fabrication and application of silicon single-electron devices,
  Ultimate lithography and Nanodevice Engineering Conference (June 13-16,2004, Agelonde, France).
• N. M. Zimmerman, A. Fujiwara, S. Martin, Y. Ono, and Y. Takahashi:
  Silicon-based tunable-barrier single-charge sources,
  Conference on Precision Electromagnetic Measurements (CPEM 2004, June 27- July 2, London, UK).
• H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi (invited):
  Single-electron devices fabricated by MOS processes,
  European Material Research Society 2004 Spring Meeting (E-MRS 2004 Spring Meeting, May 24-28, 2004, Strasbourg, France).
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi and H. Inokawa (invited):
  Silicon single-electron devices operating with MOSFETs,
  6th International Conference on New Phenomena in Mesoscopic Systems & 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices, (NPMS-6 & SIMD-4, 2003 December, Maui, Hawaii, USA),
  Abstract p. 107.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa and Y. Takahashi (invited):
  Silicon nano-devices and single-electron devices,
  2003 International Semiconductor Device Research Symposium (ISDRS 2003, December 10-12, Washington, USA).
  Proceedings pp. 448-449 (IEEE Catalog Number: 03EX741).
• A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi:
  Single-electron turnstile using Si-wire charge-coupled devices,
  2003 International Semiconductor Device Research Symposium (ISDRS 2003, December 10-12, Washington, USA)
  Symposium Proceedings pp. 485-486 (IEEE Catalog Number: 03EX741).
• S-J. Kim, Y. Ono, Y. Takahashi and J.-B. Choi:
  Fabrication of combined structure of silicon single-electron pump with an extra island and MOSFET charge detector,
  2003 International Microprocesses and Nanotechnology Conference (MNC 2003, October 29-31, Tokyo).
  Abstract, pp. 26-27.
• K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
  Automatic control of the oscillation phase of a single-electron transistor by a memory node with a small MOSFET,
  61th Annual Device Research Conference (DRC 2003, June 23-25, Salt-lake City, USA).
  Abstract, pp. 135-136.
• Y. Ono, K. Yamazaki, and Y. Takahashi:
  Silicon single-electron turnstile,
  61th Annual Device Research Conference (DRC 2003, June 23-25, Salt-lake City, USA).
  Abstract, pp. 137-138.
• Y. Ono, N. M. Zimmermann, and Y. Takahashi:
  Single-electron pump using Si dual-gate single-electron transistor,
  2003 Silicon Nanoelectronics Workshop (SNW-2003, June 8-9, Kyoto).
  Workshop abstract, pp. 78-79.

• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (invited):
  Development of Si single-electron devices,
  4th International Symposium on Nanostructures and Mesoscopic Systems (NanoMES-2003, February 17-21, Tempe, Arizona, USA)
  Abstract No. RP1 (2003.2).
• H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
  Influence of oxidation temperature on Si single-electron transistor characteristics
  47-th International Conference on Electron, Ion, and Photon Beam Technology and Noanofabrication (EIPBN-2003, June).
• H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
  Fabrication of size-controlled Si single-electron transistors by E-beam nanolithography,
  46-th International Conference on Electron, Ion, and Photon Beam Technology and Noanofabrication (EIPBN-2002, June).
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (invited):
  Silicon single-electron devices for logic applications,
  32th European Solid-State Device Research Conference (ESSDERC-2002, September 24-26, Firenze, Italy).
  Proceedings of 32nd ESSDERC, Eds. G. Baccarani, E. Gnani, and M. Rudan, pp.61-68.
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (invited):
  Silicon single-electron transistors and their applications to logic circuits,
  2002 Int. Meeting of The Electrochemical Society (ECS) Abstract No. 629 (2002.5).
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, (invited):
  Silicon single-electron transistors and single-electron CCD,
  The Fall 2001 Meeting of the Materials Research Society(MRS) (2001.11).
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, (invited):
  Silicon single-electron devices,
  7th International Symposium on Advanced Physical Fields (APF-7) pp. 11-15 (2001.11).
• Y. Ono and Y. Takahashi:
  Observation of negative differential conductance and its impact on single-electron-transistor characteristics,
  2001 International Conference on Solid State Devices and Materials (SSDM-2001, September 26-28, Tokyo).
  Extended abstract, pp. 550-551.
• M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, and Y. Takahashi (invited):
  Si single-electron devices formed by pattern-dependent oxidation,
  8-th International Conference on Formation of Semiconductor Interfaces (ICFSI-8, June 10-15, 2001, Hokkaido Univ. Sapporo).
• Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi, and Y. Takahashi (invited):
  Single-electron and quantum SOI devices,
  12th biannual Conference on Insulating Films on Semiconductors Conference Proceedings (INFOS-2001, June 20-23, Udine, Italy).
  Abstract, pp. 149-150.
• Y. Ono and Y. Takahashi:
  Single-electron pass-transistor logic and its application to a binary adder,
  2001 Symposium on VLSI Circuits (VLSI-2001, June 14-16, Kyto).
  Digest of Technical Papers, pp. 63-66.
• Y. Ono, K. Yamazaki, and Y. Takahashi (invited):
  Arithmetic operations by single-electron transistors,
  2001 Silicon Nanoelectronics Workshop (SNW-2001, June 10-11, Kyoto).
  Workshop Abstracts, pp. 34-35.
• Y. Takahashi, Y. Ono, and A. Fujiwara (invited):
  Silicon single-electron devices and their circuit applications,
  The First Korea-U.S.-Japan Workshop on Nanostructures Science and Technology (WNST-2001, April 23-25, 2001, Hanyang University, Seoul, Korea).
  Session 4-4.
• Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, and K. Murase (invited):
  Silicon single-electron transistor,
  2001 March Meeting of The American Physical Society (May 12-16, Seattle, USA).
  Bulletin pp.519.

• Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, and K. Murase (invited):
  Silicon single-electron devices,
  International Conference on Experimental Implementation of Quantum Computation (IQC01, January 16-19, Sydney, Australia).
  Abstract pp. Th3-2.
• Y. Ono, and Y. Takahashi:
  Single-electron pass-transistor logic: Operation of its elemental circuit,
  2000 International Electron Devices Meeting (IEDM-00, December 10-13, San Fransisco, USA).
  Technical Digest, pp. 297-300.
• Y. Takahashi, Y. Ono, A. Fujiwara, and M. Murase (invited):
  Advanced technologies for Si-based single-electron tunneling devices,
  International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS-2000, September 10-14, Hokkaido Univ. Sapporo).
• Y. Takahashi, A. Fujiwara, Y. Ono, and M. Murase (invited):
  Silicon single-electron devices and their applications,
  30th IEEE International Symposium on Multiple-Valued Logic (ISMVL-2000, May 23-25)
  Proceedings, pp. 411-420.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and M. Murase (invited):
  Silicon single-electron devices,
  3rd SANKEN International Symposium (2000, May, Osaka)
  Proceedings of Advanced Nanoelectronics: Devices, Materials, and Computing, pp. 4-10.
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase (invited):
  Fabrication method for IC-oriented Si single-electron transistors,
  2000 International Seminar on Physics and Technology of Compound Semiconductor Advanced Devices (RCIQE –2000, February 7-8, Sapporo).
  Collected abstract pp. 51-56.
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
  Si complementary single-electron inverter,
  1999 International Electron Devices Meeting (IEDM-1999, December 5-8, Washington, USA).
  Technical Digest, pp. 367-370.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and M. Murase (invited):
  Novel fabrication techniques for silicon single-electron devices,
  1999 International Meeting of The Electrochemical Society (ECS-1999)
  Abstract No. 1863.
• T. Ernst, D. Munteanu, S. Christoloveanu, T. Ouisse, N. Hefyene, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase:
  Ultimately thin SOI MOSFETs: Special characteristics and mechanisms,
  1999 IEEE International SOI Conference (1999, October 4-7, Rohnert Park, CA, USA).
  Abstract, pp. 92-93.
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
  Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation (VPADOX).
  1999 International Conference on Solid State Devices and Materials (SSDM-1999, September 21-24, Tokyo).
  Extended abstract, pp. 230-231
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
  Fabrication method for IC-oriented Si twin-island single-electron transistors,
  1998 International Electron Devices Meeting (IEDM-1998, December 6-9, San Fransisco, USA).
  Technical Digest, pp. 123-126 (1998).
• Y. Ono, Y. Takahashi, S. Horiguchi, K. Murase, and M. Tabe
  Electron tunneling from a quantum wire formed at the edge of a SIMOX-Si layer,
  1996 International Conference on Solid State Devices and Materials (SSDM-1996, August 26-29, Yokohama)
  Extended abstract, pp. 178-180.
• Y. Ono and M. Tabe
  STM study of thermal oxidation process on Si(111)7x7 surfaces
  1992 International Conference on Solid State Devices and Materials (SSDM-1992, August 26-28, Tsukuba)
  Extended abstract, pp. 196-198.
• Y. Ono, Tabe, and Y. Sakakibara
  Fluorine segregation at SiO₂/Si interface
  1991 International Conference on Solid State Devices and Materials (SSDM-1991, August 27-29, Yokohama)
  Extended abstract, pp. 490-492.

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updated Aug 28, 2007