Journals:
- Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, and H. Inokawa: Invited paper
Silicon single-charge transfer devices
J. Phys. Chem. Solids, to be published.
- D. Moraru, Y. Ono, H. Inokawa, H. Ikeda, and M. Tabe:
Quantized electron transfer through random multiple tunnel junctions in
phosphorous-doped silicon nanowires
Phys. Rev. Vol. B76, No.7 August (2007) 075332_1 - 075332_5.
- K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, and Y. Hirayama:
Anomalous resistance ridges along filling factor v = 4i
Phys. Rev. Letts. Vol. 99, No. 3, July (2007) 036803-1 - 036803-4.
- K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
Infrared detection with silicon nano field-effect transistor
Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1 - 223108_3.
- W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu:
Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors
IEICE Trans. Electron. Vol. E-90C, No. 5, May (2007) 943 - 948.
- K. Takashina, B. Gaillaed, Y. Ono, and Y. Hirayama:
Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
Jpn. J. Appl. Phys. Vol. 46, No. 4B, April (2007) 2596 - 2598.
- T. Goto, H. Inokawa, M. Nagase, Y. Ono, K. Sumitomo, and K. Torimitsu
Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
Jpn. J. Appl. Phys. Vol. 46, No. 4A, April (2007) 1731 - 1733.
- J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa, and H. Yamaguchi:
Impact of space-energy correlation on variable-range hopping in transistors
Phys. Rev. Letts. Vol. 98, No. 16, April (2007) 166601_1 – 166601_4.
- Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
Conductance modulation by individual acceptors in Si nanoscale field-effect
transistors
Appl. Phys. Lett. Vol. 90, No. 10, March (2007) 102106_1 - 102106_3.
- K. Kanzaki, S. Suzuki, H. Inokawa, Y. Ono, A. Vijayaraghavan, and Y. Kobayashi:
Mechanism of metal-semiconductor transition in electric properties of single-walled
carbon nanotubes induced by low-energy electron irradiation
J. Appl. Phys. Vol. 101, No. 3, February (2007) 034317 -1 034317 -4.
- K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi
Long retention of gain-cell dynamic random access memory with undoped memory node
IEEE Electron Device Letters, Vol. 28, No.1, January (2007) 48 – 50.
- N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, and H. Inokawa
Charge offset stability in tunable-barrier Si single-electron tunneling devices
Appl. Phys. Lett. Vol. 90, No. 3, January (2007) 033507_1 - 033507_3.
- Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi:
Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator
field-effect transistors at temperatures between 10 and 295 K
Phys. Rev. Vol. B74, No. 23, December (2006) 235317_1 - 235317_9.
- K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
Intersubband scattering in double-gate MOSFETs
IEEE Trans. Nanotechnology, Vol. 5, No. 5, September (2006) 430-435.
- K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
Direct observation of valley splitting at zero magnetic field
Phys. Rev. Letts. Vol. 96, No. 23, June (2006) 236801-1 236801-4.
- K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
Room-temperature-operating data processing circuit based on single-electron
transfer and detection with metal-oxide-semiconductor field-effect transistor
technology
Appl. Phys. Letts. Vol. 88, No. 18, May (2006) 183101_1 - 3.
- N. Clement, H. Inokawa, and Y. Ono:
Studies on MOSFET low-frequency noise for electrometer applications,
Jpn. J. Appl. Phys. Vol. 45, No. 4B, April (2006) 3606 - 3608.
- K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa:
Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires
Jpn. J. Appl. Phys. Vol. 44, No. 10, October (2005) 7717 - 7719.
- A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, and P. M. Ajayan:
Metal-semiconductor transition in single-wall carbon nanotubes induced
by low energy electron irradiation
Nano. Letts. Vol. 5, No. 8, August (2005) 1585 - 1589.
- Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe, and Y. Ono:
Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator
substrate
Appl. Phys. Letts. Vol. 87, No. 12, September (2005) 121905-1 – 121905-3.
- Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: Invited paper
Silicon single-electron pump and turnstile; Interplay with crystalline
imperfections
MRS Symposium Proceedings, Vol. 864, (2005) E.6.7.1, "Defects in Devices", W. G. En, E. C. Jones,
J.C. Strum, M, J. Chan, S. Tiwari, and M. Hirose, Eds., (Materials Research
Society, Warrendale).
- Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
Charge-State Control of Phosphorus Donors in a Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
Jpn. J. Appl. Phys. Vol. 44, No. 4B, April (2005) 2588 - 2591.
- N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, and Y. Takahashi:
Error mechanisms and rates in tunable-barrier single-electron turnstiles
and charge-coupled devices
J. Appl. Phys. Vol. 96, No. 9, November (2004) 5254 - 5266.
- K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi
Multilfunctional Boolean logic using single-electron transistors
IEICE Trans. Electrons. Vol. E87-C, No. 11, November (2004) 1809 – 1817.
- S.- J. Kim, Y. Ono, Y. Takahashi, and J. B. Choi
Real-time observation of single-electron movement through silicon single-electron transistor
Jpn. J. Appl. Phys. Vol. 43, No. 10, October (2004) 6863 - 6867.
- K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
Multilevel memory using an electrically formed single-electron box Appl.
Phys. Letts. Vol. 85, No. 7, August (2004) 1277 - 1279.
- A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi:
Current Quantization due to single-electron transfer in Si-wire charge
coupled devices
Appl. Phys. Letts. Vol. 84, No. 8, Feburary (2004) 1323 - 1325.
- K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
Multilevel memory using single-electron turnstile
Electronics Letters Vol. 44, No. 4, February (2004) 229 – 230.
- K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
Automatic Control of Oscillation Phase of a Single-Electron Transistor
Electron Devices Letters Vol. 25, No. 1, January (2004) 31 – 33.
- H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
Influence of oxidation temperature on Si single-electron transistor characteristics
J. Vac. Sci. Technol. Vol. B21, No. 6, November/December (2003) 2869 – 2873.
- Y. Ono, N. M. Zimmerman, K, Yamazaki and Y. Takahashi:
Turnstile operation using a silicon dual-gate single-electron transistor
Jpn. J. Appl. Phys. Vol. 42, No. 10A, October (2003) L1109 - L1111.
- Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa: Invited paper
Development of silicon single-electron devices
Physica E. Vol. 19, No. 1-2, July (2003) 95 – 101.
- Y. Ono and Y. Takahashi:
Electron pump by a combined single-electron/field-effect transistor structure
Appl. Phys. Letts. Vol. 82, No. 8, Feburary (2003) 1221 - 1223.
- H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
Fabrication of Si single-electron transistors with precise dimensions using electron-beam nanolithography
J. Vac. Sci. Technol. Vol. B21, No. 1, January/February (2003) 1 - 5.
- T. Ernst, S. Cristoloveanu , G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase:
Ultimately thin double-gate SOI MOSFETs
IEEE Trans. Electron devices Vol. 50, No. 3, March (2003) 830 - 838.
- Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi:
Invited paper
Fabrication of single-electron transistors and circuits using SOIs
Solid-State Electronics, Vo1. 46, No. 11, November (2002) 1723 - 1727.
- Y. Ono, H. Inokawa and Y. Takahashi:
Binary adder of single-electron transistors: Specific design using pass-transistor
logic
IEEE Trans. Nanotechnology, Vol. 1, No. 2, June (2002) 93-99.
- M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi
Single-electron devices formed by pattern-dependent oxidation: microscopic
structural evaluation
Applied Surface Science, Vol. 190, No. 1-4, May (2002) 144 - 150.
- Y. Ono and Y. Takahashi:
Observation and circuit application of negative differential conductance in Si single-electron transistors
Jpn. J. Appl. Phys. Vol. 41, No. 4B, April (2002) 2569 -2573.
- Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa:
Silicon single-electron transistors and single-electron CCD
MRS Symposium Proceedings, Vol. 686, "Materials issues in novel Si-based technology", W. G. En, E. C. Jones, J.C. Strum, M, J. Chan, S. Tiwari, and M. Hirose, Eds., (Materials Research Society, Warrendale) 181-191 (2002).
- Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa: Invited paper
Silicon single-electron transistors and their applications to logic circuits
"Semiconductor Silicon 2002 volume 2; Proceedings of the Ninth International Symposium on Silicon Materials Science and Technology", H. R. Huff, L. Fabry, and S. Kishino, Eds, (The Electrochemical Society Inc., Pennington) 968-978 (2002).
- R. Nuryadi, Y. Ishikawa, Y. Ono and M. Tabe:
Thermal agglomeration of single-crystalline Si layer on buried SiO2 in ultrahigh vacuum
J. Vac. Sci. Technol. Vol. B20, No. 1, January/February (2002) 167 - 172.
- Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi: Invited paper
Single-electron and quantum SOI devices
Microelectronic Engineering, Vo1. 59, No. 1-4, November (2001) 435 - 442.
- Y. Ono, K. Yamazaki and Y. Takahashi:
Si single-electron transistors with high voltage gain
IEICE Trans. Electron. Vol. E84-C, No. 8, August, (2001) 1061 - 1065.
- Y. Takahashi, Y. Ono, A. Fujiwara, K. Shiraishi, M. Nagase, S. Horiguchi, and K. Murase: Invited paper
Advanced techniques of silicon single-electron devices
Proceedings of the 1st International Conference on Experimental Implementation
of Quantum Computation, R. G. Clark Ed., (Rinton Press, Prinston) 183-188 (2001).
- Y. Takahashi, A. Fujiwara, Y. Ono, and K. Murase: Invited paper
Silicon single-electron devices and their applications
Proceedings of the 30th IEEE International Symposium on Multiple-Valued
Logic, (IEEE Computer Society: Los Alamitos,Washington, Brussels, Tokyo), pp.
411-420 (2000).
- Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase:
Si complementary single-electron inverter with voltage gain
Appl. Phys. Lett., Vol. 76, No. 21, May (2000) 3121 - 3123.
- Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K.
Murase:
Single-electron transistors and current-switching devices fabricated by
Vertical Pattern-Dependent Oxidation
Jpn. J. Appl. Phys., Vol. 39, No. 4B, April (2000) 2325 - 2328.
- Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K.
Murase:
Fabrication method for IC-oriented Si single-electron transistors
IEEE Trans. on Electron Devices, Vol. 47, No. 1, January (2000) 147 - 153.
- Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and M. Murase: Invited paper
Novel fabrication techniques for silicon single-electron devices
Advanced Luminescent Materials and Quantum Confinement,--Proceedings of the International Symposium of ECS, M. Cahay, J. P. Leburton, S. Bandyopadhyay, M. Meyyappan, D. J. Lockwood,
T. Sakamoto, and N. Koshida, Eds. (Pennington: The Electrochemical Society),
Proceedings Volume 99-22, (1999) 302-321.
- T. Ouisse, D. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase and S. Cristoloveanu:
Investigation of SOI MOSFETs with ultimate thickness
Microelectronics Engineering Vol. 48, No. 1-4, September (1999) 339 - 342.
- T. Ouisse, D. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase and S. Cristoloveanu:
Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator
MOSFETs
Physca B, Vol. 249-251, No. 1, June (1998) 731 - 734.
- Y. Ono, Y. Takahashi, S. Horiguchi, K. Murase and M. Tabe:
Electron tunneling from the edge of thin single-crystal Si layers through
SiO2 film
J. Appl. Phys., Vol. 80, No. 8, October (1996) 4450 - 4457.
- Y. Ono, M. Nagase, M. Tabe and Y. Takahashi:
Thermal agglomeration of thin single crystal Si on SiO2 in vacuum
Jpn. J. Appl. Phys. Vol. 34, No. 4A, April (1995) 1728 - 1735.
- Y. Takahashi, T. Furuta, Y. Ono, T. Ishiyama and M. Tabe:
Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate
Jpn. J. Appl. Phys., Vol. 34, No. 2B, February (1995) 950 - 954.
- H. Kageshima, Y. Ono, M. Tabe and T. Ohno:
Origin of dark regions in scanning tunneling microscopy images formed by
thermal oxidation of Si(111) surface
Jpn. J. Appl. Phys., Vol. 33, No. 7A, July (1994) 4070 - 4074.
- Y. Ono, M. Tabe and H. Kageshima:
Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7x7
surfaces
Phys. Rev. Vol. B48, No. 19, November (1993) 14291 - 14300.
- Y. Ono, M. Tabe and Y. Sakakibara:
Segregation and defect termination of fluorine at SiO2/Si interfaces
Appl. Phys. Lett. Vol. 62, No. 4, January (1993) 375 - 377.
- Y. Ono and T. Makino:
Influence of effective masses on the oscillation of Fowler-Nordheim tunneling
in thin SiO2 MOS capacitors
Jpn. J. Appl. Phys., Vol. 29, No. 11, November (1990) 2381 - 2385.
updated Aug 28, 2007