Journals:

• Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, and H. Inokawa: Invited paper
  Silicon single-charge transfer devices
  J. Phys. Chem. Solids, to be published.
• D. Moraru, Y. Ono, H. Inokawa, H. Ikeda, and M. Tabe:
  Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires
  Phys. Rev. Vol. B76, No.7 August (2007) 075332_1 - 075332_5.
• K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, and Y. Hirayama:
  Anomalous resistance ridges along filling factor v = 4i
  Phys. Rev. Letts. Vol. 99, No. 3, July (2007) 036803-1 - 036803-4.
• K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
  Infrared detection with silicon nano field-effect transistor
  Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1 - 223108_3.
• W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu:
  Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors
  IEICE Trans. Electron. Vol. E-90C, No. 5, May (2007) 943 - 948.
• K. Takashina, B. Gaillaed, Y. Ono, and Y. Hirayama:
  Low-Temperature Characteristics of Ambipolar SiO₂/Si/SiO₂ Hall-Bar Devices
  Jpn. J. Appl. Phys. Vol. 46, No. 4B, April (2007) 2596 - 2598.
• T. Goto, H. Inokawa, M. Nagase, Y. Ono, K. Sumitomo, and K. Torimitsu
  Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
  Jpn. J. Appl. Phys. Vol. 46, No. 4A, April (2007) 1731 - 1733.
• J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa, and H. Yamaguchi:
  Impact of space-energy correlation on variable-range hopping in transistors
  Phys. Rev. Letts. Vol. 98, No. 16, April (2007) 166601_1 – 166601_4.
• Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
  Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
  Appl. Phys. Lett. Vol. 90, No. 10, March (2007) 102106_1 - 102106_3.
• K. Kanzaki, S. Suzuki, H. Inokawa, Y. Ono, A. Vijayaraghavan, and Y. Kobayashi:
  Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation
  J. Appl. Phys. Vol. 101, No. 3, February (2007) 034317 -1 034317 -4.
• K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi
  Long retention of gain-cell dynamic random access memory with undoped memory node
  IEEE Electron Device Letters, Vol. 28, No.1, January (2007) 48 – 50.
• N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, and H. Inokawa
  Charge offset stability in tunable-barrier Si single-electron tunneling devices
  Appl. Phys. Lett. Vol. 90, No. 3, January (2007) 033507_1 - 033507_3.
• Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi:
  Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K
  Phys. Rev. Vol. B74, No. 23, December (2006) 235317_1 - 235317_9.
• K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
  Intersubband scattering in double-gate MOSFETs
  IEEE Trans. Nanotechnology, Vol. 5, No. 5, September (2006) 430-435.
• K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
  Direct observation of valley splitting at zero magnetic field
  Phys. Rev. Letts. Vol. 96, No. 23, June (2006) 236801-1 236801-4.
• K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
  Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
  Appl. Phys. Letts. Vol. 88, No. 18, May (2006) 183101_1 - 3.
• N. Clement, H. Inokawa, and Y. Ono:
  Studies on MOSFET low-frequency noise for electrometer applications,
  Jpn. J. Appl. Phys. Vol. 45, No. 4B, April (2006) 3606 - 3608.
• K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa:
  Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires
  Jpn. J. Appl. Phys. Vol. 44, No. 10, October (2005) 7717 - 7719.
• A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, and P. M. Ajayan:
  Metal-semiconductor transition in single-wall carbon nanotubes induced by low energy electron irradiation
  Nano. Letts. Vol. 5, No. 8, August (2005) 1585 - 1589.

• Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe, and Y. Ono:
  Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
  Appl. Phys. Letts. Vol. 87, No. 12, September (2005) 121905-1 – 121905-3.
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: Invited paper
  Silicon single-electron pump and turnstile; Interplay with crystalline imperfections
  MRS Symposium Proceedings, Vol. 864, (2005) E.6.7.1, "Defects in Devices", W. G. En, E. C. Jones, J.C. Strum, M, J. Chan, S. Tiwari, and M. Hirose, Eds., (Materials Research Society, Warrendale).
• Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
  Charge-State Control of Phosphorus Donors in a Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
  Jpn. J. Appl. Phys. Vol. 44, No. 4B, April (2005) 2588 - 2591.
• N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, and Y. Takahashi:
  Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices
  J. Appl. Phys. Vol. 96, No. 9, November (2004) 5254 - 5266.
• K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi
  Multilfunctional Boolean logic using single-electron transistors
  IEICE Trans. Electrons. Vol. E87-C, No. 11, November (2004) 1809 – 1817.
• S.- J. Kim, Y. Ono, Y. Takahashi, and J. B. Choi
  Real-time observation of single-electron movement through silicon single-electron transistor
  Jpn. J. Appl. Phys. Vol. 43, No. 10, October (2004) 6863 - 6867.
• K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
  Multilevel memory using an electrically formed single-electron box Appl.
  Phys. Letts. Vol. 85, No. 7, August (2004) 1277 - 1279.
• A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi:
  Current Quantization due to single-electron transfer in Si-wire charge coupled devices
  Appl. Phys. Letts. Vol. 84, No. 8, Feburary (2004) 1323 - 1325.
• K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
  Multilevel memory using single-electron turnstile
  Electronics Letters Vol. 44, No. 4, February (2004) 229 – 230.
• K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
  Automatic Control of Oscillation Phase of a Single-Electron Transistor
  Electron Devices Letters Vol. 25, No. 1, January (2004) 31 – 33.
• H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
  Influence of oxidation temperature on Si single-electron transistor characteristics
  J. Vac. Sci. Technol. Vol. B21, No. 6, November/December (2003) 2869 – 2873.
• Y. Ono, N. M. Zimmerman, K, Yamazaki and Y. Takahashi:
  Turnstile operation using a silicon dual-gate single-electron transistor
  Jpn. J. Appl. Phys. Vol. 42, No. 10A, October (2003) L1109 - L1111.
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa: Invited paper
  Development of silicon single-electron devices
  Physica E. Vol. 19, No. 1-2, July (2003) 95 – 101.
• Y. Ono and Y. Takahashi:
  Electron pump by a combined single-electron/field-effect transistor structure
  Appl. Phys. Letts. Vol. 82, No. 8, Feburary (2003) 1221 - 1223.
• H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
  Fabrication of Si single-electron transistors with precise dimensions using electron-beam nanolithography
  J. Vac. Sci. Technol. Vol. B21, No. 1, January/February (2003) 1 - 5.
• T. Ernst, S. Cristoloveanu , G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase:
  Ultimately thin double-gate SOI MOSFETs
  IEEE Trans. Electron devices Vol. 50, No. 3, March (2003) 830 - 838.

• Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi: Invited paper
  Fabrication of single-electron transistors and circuits using SOIs
  Solid-State Electronics, Vo1. 46, No. 11, November (2002) 1723 - 1727.
• Y. Ono, H. Inokawa and Y. Takahashi:
  Binary adder of single-electron transistors: Specific design using pass-transistor logic
  IEEE Trans. Nanotechnology, Vol. 1, No. 2, June (2002) 93-99.
• M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi
  Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation
  Applied Surface Science, Vol. 190, No. 1-4, May (2002) 144 - 150.
• Y. Ono and Y. Takahashi:
  Observation and circuit application of negative differential conductance in Si single-electron transistors
  Jpn. J. Appl. Phys. Vol. 41, No. 4B, April (2002) 2569 -2573.
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa:
  Silicon single-electron transistors and single-electron CCD
  MRS Symposium Proceedings, Vol. 686, "Materials issues in novel Si-based technology", W. G. En, E. C. Jones, J.C. Strum, M, J. Chan, S. Tiwari, and M. Hirose, Eds., (Materials Research Society, Warrendale) 181-191 (2002).
• Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa: Invited paper
  Silicon single-electron transistors and their applications to logic circuits
  "Semiconductor Silicon 2002 volume 2; Proceedings of the Ninth International Symposium on Silicon Materials Science and Technology", H. R. Huff, L. Fabry, and S. Kishino, Eds, (The Electrochemical Society Inc., Pennington) 968-978 (2002).
• R. Nuryadi, Y. Ishikawa, Y. Ono and M. Tabe:
  Thermal agglomeration of single-crystalline Si layer on buried SiO₂ in ultrahigh vacuum
  J. Vac. Sci. Technol. Vol. B20, No. 1, January/February (2002) 167 - 172.
• Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi: Invited paper
  Single-electron and quantum SOI devices
  Microelectronic Engineering, Vo1. 59, No. 1-4, November (2001) 435 - 442.
• Y. Ono, K. Yamazaki and Y. Takahashi:
  Si single-electron transistors with high voltage gain
  IEICE Trans. Electron. Vol. E84-C, No. 8, August, (2001) 1061 - 1065.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Shiraishi, M. Nagase, S. Horiguchi, and K. Murase: Invited paper
  Advanced techniques of silicon single-electron devices
  Proceedings of the 1st International Conference on Experimental Implementation of Quantum Computation, R. G. Clark Ed., (Rinton Press, Prinston) 183-188 (2001).
• Y. Takahashi, A. Fujiwara, Y. Ono, and K. Murase: Invited paper
  Silicon single-electron devices and their applications
  Proceedings of the 30th IEEE International Symposium on Multiple-Valued Logic, (IEEE Computer Society: Los Alamitos,Washington, Brussels, Tokyo), pp. 411-420 (2000).
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase:
  Si complementary single-electron inverter with voltage gain
  Appl. Phys. Lett., Vol. 76, No. 21, May (2000) 3121 - 3123.
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase:
  Single-electron transistors and current-switching devices fabricated by Vertical Pattern-Dependent Oxidation
  Jpn. J. Appl. Phys., Vol. 39, No. 4B, April (2000) 2325 - 2328.
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
  Fabrication method for IC-oriented Si single-electron transistors
  IEEE Trans. on Electron Devices, Vol. 47, No. 1, January (2000) 147 - 153.
• Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and M. Murase: Invited paper
  Novel fabrication techniques for silicon single-electron devices
  Advanced Luminescent Materials and Quantum Confinement,--Proceedings of the International Symposium of ECS, M. Cahay, J. P. Leburton, S. Bandyopadhyay, M. Meyyappan, D. J. Lockwood, T. Sakamoto, and N. Koshida, Eds. (Pennington: The Electrochemical Society), Proceedings Volume 99-22, (1999) 302-321.
• T. Ouisse, D. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase and S. Cristoloveanu:
  Investigation of SOI MOSFETs with ultimate thickness
  Microelectronics Engineering Vol. 48, No. 1-4, September (1999) 339 - 342.

• T. Ouisse, D. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase and S. Cristoloveanu:
  Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFETs
  Physca B, Vol. 249-251, No. 1, June (1998) 731 - 734.
• Y. Ono, Y. Takahashi, S. Horiguchi, K. Murase and M. Tabe:
  Electron tunneling from the edge of thin single-crystal Si layers through SiO₂ film
  J. Appl. Phys., Vol. 80, No. 8, October (1996) 4450 - 4457.
• Y. Ono, M. Nagase, M. Tabe and Y. Takahashi:
  Thermal agglomeration of thin single crystal Si on SiO₂ in vacuum
  Jpn. J. Appl. Phys. Vol. 34, No. 4A, April (1995) 1728 - 1735.
• Y. Takahashi, T. Furuta, Y. Ono, T. Ishiyama and M. Tabe:
  Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate
  Jpn. J. Appl. Phys., Vol. 34, No. 2B, February (1995) 950 - 954.
• H. Kageshima, Y. Ono, M. Tabe and T. Ohno:
  Origin of dark regions in scanning tunneling microscopy images formed by thermal oxidation of Si(111) surface
  Jpn. J. Appl. Phys., Vol. 33, No. 7A, July (1994) 4070 - 4074.
• Y. Ono, M. Tabe and H. Kageshima:
  Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7x7 surfaces
  Phys. Rev. Vol. B48, No. 19, November (1993) 14291 - 14300.
• Y. Ono, M. Tabe and Y. Sakakibara:
  Segregation and defect termination of fluorine at SiO₂/Si interfaces
  Appl. Phys. Lett. Vol. 62, No. 4, January (1993) 375 - 377.
• Y. Ono and T. Makino:
  Influence of effective masses on the oscillation of Fowler-Nordheim tunneling in thin SiO₂ MOS capacitors
  Jpn. J. Appl. Phys., Vol. 29, No. 11, November (1990) 2381 - 2385.

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updated Aug 28, 2007