Selected papers with LINKs:

• Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
  Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
  Appl. Phys. Lett. Vol. 90, No. 10, March (2007) 102106_1 - 102106_3.[LINK]
• J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa, and H. Yamaguchi:
  Impact of space-energy correlation on variable-range hopping in transistors
  Phys. Rev. Letts. Vol. 98, No. 16, April (2007) 166601_1 – 166601_4.[LINK]
• Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi:
  Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K
  Phys. Rev. Vol. B74, No. 23, December (2006) 235317_1 - 235317_9.[LINK]
• Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
  Charge-State Control of Phosphorus Donors in a Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
  Jpn. J. Appl. Phys. Vol. 44, No. 4B, April (2005) 2588 - 2591.[LINK]

• D. Moraru, Y. Ono, H. Inokawa, H. Ikeda, and M. Tabe:
  Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires
  Phys. Rev. Vol. B76, No.7 August (2007) 075332_1 - 075332_5.[LINK]
• A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi:
  Current quantization due to single-electron transfer in Si-wire charge coupled devices
  Appl. Phys. Letts. Vol. 84, No. 8, Feburary (2004) 1323 - 1325.[LINK]
• Y. Ono, N. M. Zimmerman, K, Yamazaki and Y. Takahashi:
  Turnstile operation using a silicon dual-gate single-electron transistor
  Jpn. J. Appl. Phys. Vol. 42, No. 10A, October (2003) L1109 - L1111.[LINK]
• Y. Ono and Y. Takahashi:
  Electron pump by a combined single-electron/field-effect transistor structure
  Appl. Phys. Letts. Vol. 82, No. 8, Feburary (2003) 1221 - 1223.[LINK]

• K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
  Infrared detection with silicon nano field-effect transistor
  Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1 - 223108_3.[LINK]
• K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
  Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
  Appl. Phys. Letts. Vol. 88, No. 18, May (2006) 183101_1 - 3.[LINK]
• Y. Ono, H. Inokawa and Y. Takahashi:
  Binary adder of single-electron transistors: Specific design using pass-transistor logic
  IEEE Trans. Nanotechnology, Vol. 1, No. 2, June (2002) 93-99.[LINK]
• Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi: Invited paper
  Single-electron and quantum SOI devices
  Microelectronic Engineering, Vo1. 59, No. 1-4, November (2001) 435 - 442.[LINK]
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase:
  Si complementary single-electron inverter with voltage gain
  Appl. Phys. Lett., Vol. 76, No. 21, May (2000) 3121 - 3123.[LINK]
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
  Fabrication method for IC-oriented Si single-electron transistors
  IEEE Trans. on Electron Devices, Vol. 47, No. 1, January (2000) 147 - 153.[LINK]

• Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe, and Y. Ono:
  Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
  Appl. Phys. Letts. Vol. 87, No. 12, September (2005) 121905-1 – 121905-3.[LINK]
• R. Nuryadi, Y. Ishikawa, Y. Ono and M. Tabe:
  Thermal agglomeration of single-crystalline Si layer on buried SiO₂ in ultrahigh vacuum
  J. Vac. Sci. Technol. Vol. B20, No. 1, January/February (2002) 167 - 172.[LINK]
• Y. Ono, M. Nagase, M. Tabe and Y. Takahashi:
  Thermal agglomeration of thin single crystal Si on SiO₂ in vacuum
  Jpn. J. Appl. Phys. Vol. 34, No. 4A, April (1995) 1728 - 1735.[LINK]
• Y. Ono, M. Tabe and H. Kageshima:
  Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7x7 surfaces
  Phys. Rev. Vol. B48, No. 19, November (1993) 14291 - 14300.[LINK]
• Y. Ono, M. Tabe and Y. Sakakibara:
  Segregation and defect termination of fluorine at SiO₂/Si interfaces
  Appl. Phys. Lett. Vol. 62, No. 4, January (1993) 375 - 377.[LINK]

• K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, and Y. Hirayama:
  Anomalous resistance ridges along filling factor v = 4i
  Phys. Rev. Letts. Vol. 99, No. 3, July (2007) 036803-1 - 036803-4.[LINK]
• K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
  Direct observation of valley splitting at zero magnetic field
  Phys. Rev. Letts. Vol. 96, No. 23, June (2006) 236801-1 236801-4.[LINK]
• T. Ernst, S. Cristoloveanu , G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase:
  Ultimately thin double-gate SOI MOSFETs
  IEEE Trans. Electron devices Vol. 50, No. 3, March (2003) 830 - 838.[LINK]
• T. Ouisse, D. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase and S. Cristoloveanu:
  Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFETs
  Physca B, Vol. 249-251, No. 1, June (1998) 731 - 734.[LINK]
• Y. Ono, Y. Takahashi, S. Horiguchi, K. Murase and M. Tabe:
  Electron tunneling from the edge of thin single-crystal Si layers through SiO₂ film
  J. Appl. Phys., Vol. 80, No. 8, October (1996) 4450 - 4457.[LINK]

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updated Sep 6, 2007