Invited talks in international conferences

• Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, and A. Fujiwara: (invited)
  Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
  Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V, Nov. 12-14, Tokyo, Japan), to be presented.
• Y. Ono, K. Nishiguchi, K. Takashina, H. Inokawa, S. Horiguchi, andY. Takahashi: (invited)
  Impurity conduction and its control in phosphorus-doped SOI MOSFET.
  2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA).
  Workshop abstract, pp. 111-112.
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Single-electron transfer in silicon; Towards single-dopant electronics.
  The 3rd International Workshop on Ubiquitous Knowledge Network Environment (February 27 – March 1, 2006, Sapporo, Japan)
  Abstract, p. 15.
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Single-electron transfer in silicon.
  2005 International Workshop on the Physics semiconductor devices (IWPSD, December 13-17, 2005, New Delhi, India)
• Y. Ono: (invited)
  Single-electron manipulation in silicon; Towards single-dopant electronics.
  7th International Conference on New Phenomena in Mesoscopic Structures and 5th International Conference on Surfaces and Interfaces of Mesoscopic Devices (NPMS-7/SIMD-5, November 27 – December 2, 2005, Maui, USA)
  Abstract, p. 29
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Single-electron manipulation; Interplay with crystalline imperfection.
  2nd International Symposium on Point Defect and Nonstoichiometry (ISPN-2, October 4-6, 2005, Kaoshiung, Taiwan) Session Th-A2-1
  Final program and Abstract book, p. 20
• Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa: (invited)
  Silicon single-electron pump and turnstile; Interplay with crystalline imperfection.
  2005 Material Research Society Spring Meeting (2005 MRS Spring meeting, March 28 – April 1, 2005, San Francisco, CA, USA) Session E6.7.
• Y. Ono: (invited)
  Single-electron transistor and its logic applications,
  ITRS Emerging research logic devices workshop (ERD2004, September 24, 2004, Leuven, Belgium).
• Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi, and Y. Takahashi: (invited)
  Single-electron and quantum SOI devices,
  12th biannual Conference on Insulating Films on Semiconductors Conference Proceedings (INFOS-2001, June 20-23, Udine, Italy).
  Abstract, pp. 149-150.
• Y. Ono, K. Yamazaki, and Y. Takahashi: (invited)
  Arithmetic operations by single-electron transistors,
  2001 Silicon Nanoelectronics Workshop (SNW-2001, June 10-11, Kyoto).
  Workshop Abstracts, pp. 34-35.
• Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase: (invited)
  Fabrication method for IC-oriented Si single-electron transistors,
  2000 International Seminar on Physics and Technology of Compound Semiconductor Advanced Devices (RCIQE –2000, February 7-8, Sapporo).
  Collected abstract pp. 51-56.

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updated Aug 28, 2007