Shinichi Tanabe

Low-dimensional Nanomaterials Research Group
Materials Science Laboratory
NTT Basic Research Laboratories

Research Interest

Electrical properties of epitaxial graphene grown on SiC

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Publication List
(Last updated 23 March 2012)

S. Tanabe, Y. Sekine, H. Kageshima, and H. Hibino

"Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation

of Monolayer Graphene on SiC(0001)"

Jpn. J. Appl. Phys. 51, 02BN02 (2012).

S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino

"Carrier transport mechanism in graphene on SiC(0001)"

Phys. Rev. B 84, 115458 (2011).

H. Hibino,S. Tanabe, and H. Kageshima
“Graphene growth by thermal decomposition of SiC and its characterization by LEEM” 
Display Vol.17, No.10, 21 (2010) (in Japanese)

H. Kageshima, H. Hibino, and S. Tanabe
“Graphene” 
KinouZairyou Vol.31, No.5, 56 (2010) (in Japanese)

S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino

"Observation of band gap in epitaxial bilayer graphene field effect transistor"

Jpn. J. Appl. Phys. 50, 04DN04 (2011).

S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino

“Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC”

Mater. Res. Soc. Symp. Proc. Vol. 1283 (2011).

H. Hibino, H. Kageshima, S. Tanabe, M. Nagase, and S. Mizuno
“Growth and characterization of epitaxial graphene on SiC”
Kotaibusturi Vol.45 No.10 (2010) (in Japanese)

H. Hibino, S. Tanabe, and H. Kageshima

“Epitaxial few-layer graphene: toward single crystal growth” (in Japanese)

NEW DIAMOND 99, 23 (2010)

S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino

“Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices”

Appl. Phys. Exp. 3 (2010) 075102.
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