Quantum Solid State Physics Research Group,
Physical Science Laboratory,
NTT Basic Research Laboratories.
She received the B.Sc., M.Sc., and Ph.D. degrees in physics from the University of Tokyo in 2004, 2006,
and 2009, respectively. Since joining NTT Basic Research Laboratories in 2009, she has been engaged in research on the bilayer quantum Hall state in GaAs and the quantum Hall effect in graphene. She is a member of the Physical Society of Japan and the Surface Science Society of Japan.
応用物理学会誌に研究紹介記事を執筆しました。(応用物理 第87巻 第9号 (2018))
K. Takase, Y. Ashikawa, G. Zhang, K. Tateno, and S. Sasaki,
"Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor",
published in Scientific Reports
- email: takase.keiko"_at_"lab.ntt.co.jp
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