Welcome to Yoshitaka Taniyasu's Homepage
HOME PAGE of NTT Basic Res. Labs.
Biography
- Bachelor degree in 1996 from the
division of Electrical and Electronic Engineering, Chiba University,
- Master degree in 1998 from the division of Electronic and Mechanical
Engineering, Chiba University,
- Degree of Doctor of Philosophy (Engineering) in 2001 from Chiba
University,
(Doctor thesis: In-situ monitoring of MOVPE growth of III-nitride
semiconductors by spectroscopic ellipsometry)
- Joined NTT in 2001
Research Interests
Physical properties of AlN and its device
application
1. MOVPE growth
of high crystal quality AlN
2.
Control of electrical properties for AlN and AlGaN with high Al content
3.
AlN-based field emission displays (FED) and micro vacuum tubes (MVT)
Selected Publications
n-type AlN and AlGaN with high Al
content
Y. Taniyasu, M. Kasu, K. Kumakura, T. Makimoto, and N.
Kobayashi, “High
electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al
content of 80%”, phys. stat. sol. (a) 200 (2003) 40.
Y. Taniyasu, M. Kasu, and N. Kobayashi, “Intentional control of
n-type conduction for Si-doped AlN and AlXGa1-XN (0.42 <
x < 1)”, Appl. Phys. Lett. 81 (2002) 1255.
AlN-based cold cathode materials and
it applications
Y. Taniyasu, M. Kasu, and T. Makimoto, "Field
Emission Properties of Heavily Si-doped AlN
in Triode-Type Display Structure", Appl.
Phys. Lett. (2004) to be published.
Y. Taniyasu, M. Kasu, T. Makimoto, and N. Kobayashi, “Triode-type basic display
structure using Si-doped AlN field emitters”, phys. stat. sol. (a) 200 (2003) 199.
Y. Taniyasu, M. Kasu, and N. Kobayashi, “Lattice
parameters of wurtzite Al1-XSiXN ternary alloys”, Appl.
Phys. Lett. 79 (2001) 4351.
M. Kasu, Y. Taniyasu, and
N. Kobayashi, "Formation of solid solution of Al1-XSiXN
(0<x<12%) ternary
alloy", Jpn. J. Appl. Phys. Lett. 40
(2001) 1048.
In-situ optical monitoring
Y. Taniyasu and A. Yoshikawa,
“In-situ Monitoring of Surface Stoichiometry and Growth Kinetics Study of GaN
(0001) in MOVPE by Spectroscopic Ellipsometry”,
J. Elect. Mater. 30 (2001) 1402.
Cubic InGaN LED
Y. Taniyasu, K. Suzuki, D. H.
Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K.
Takahashi, “Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown
on GaAs (001) Substrates by MOVPE”, phys. stat. sol. (a) 180 (2000) 241.
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa, 243-0198 JAPAN
TEL: +81 46 240 3497
FAX: +81 46 240 4729
