Welcome to Yoshitaka Taniyasu's Homepage 
Biography
1996 Bachelor degree from the division of Electrical and Electronic
Engineering, Chiba University,
1998 Master degree from the division of Electronic and Mechanical
Engineering, Chiba University,
2001 Ph.D in Engineering from Chiba University
(Doctor thesis: In-situ monitoring of MOVPE growth of III-nitride
semiconductors by spectroscopic ellipsometry)
2001-2003 Research associate, NTT Basic research laboratories
2003- NTT Basic research laboratories
2010-
Distinguished Technical Member of NTT Basic Research Laboratories
Research
Interests
Aluminum nitride (AlN): Growth,
Physics, and Device applications
1. AlN light-emitting devices
2. High-quality AlN MOVPE growth
3. Doping control
4. Optical and electrical properties of AlN-based
materials
Selected Publications
AlN p-n junction light-emitting diodes (LEDs)
with the shortest emission wavelength
·
Y. Taniyasu and M. Kasu, “Origin
of exciton emissions from an AlN
p-n junction light-emitting diode”, Appl. Phys. Lett. 98, 131910 (2011).
·
Y. Taniyasu and M. Kasu, “Surface
210 nm light emission from an AlN p–n junction
light-emitting diode enhanced by A-plane growth orientation”, Appl. Phys. Lett. 96, 221110
(2010).
·
Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride
light-emitting diode with a wavelength of 210 nanometres”,
Nature 441, 325-328 (2006).
Exciton
emission properties of AlN
·
R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S.
B. Thapa, F. Scholz, Y.
Taniyasu and M. Kasu, “Photoluminescence of highly
excited AlN: Biexcitons and
exciton-exciton scattering”, Appl.
Phys. Lett.
95, 031903 (2009).
·
Y. Taniyasu, M. Kasu, and T. Makimoto, "Radiation and polarization properties of
free-exciton emission from AlN
(0001) surface”, Appl. Phys. Lett.
90, 261911 (2007).
·
G. M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y.
Taniyasu, M. Kasu, and T. Makimoto,
“Cathodoluminescence, photoluminescence, and
reflectance of an aluminum nitride layer grown on silicon carbide substrate”, J.
Appl. Phys. 101, 023511 (2007).
Doping mechanisms and carrier transport
properties of AlN-based materials
·
Y. Taniyasu, M. Kasu, and T. Makimoto, “Increased electron mobility in n-type Si-doped AlN by reducing dislocation density”, Appl.
Phys. Lett. 89, 182112 (2006).
·
Y. Taniyasu, M. Kasu, and T. Makimoto, “Electrical conduction properties of n-type
Si-doped AlN with high electron mobility (> 100cm2V-1S-1)”,
Appl. Phys. Lett. 85, 4672
(2004).
·
Y. Taniyasu, M. Kasu, K. Kumakura, T. Makimoto, and N.
Kobayashi, “High electron concentrations in Si-doped AlN/AlGaN
superlattices with high average Al content of 80%”, phys. stat. sol. (a) 200, 40 (2003).
·
Y. Taniyasu, M. Kasu, and N.
Kobayashi, “Intentional control of n-type conduction for Si-doped AlN and AlXGa1-XN (0.42 < x
< 1)”, Appl. Phys. Lett.
81, 1255 (2002).
AlN-based cold cathode materials and it applications
·
Y. Taniyasu, M.Kasu, and T. Makimoto, “Field emission properties of heavily Si-doped AlN in triode-type display structure”, Appl.
Phys. Lett. 84, 2115 (2004).
·
Y. Taniyasu, M. Kasu, and N. Kobayashi, “Lattice parameters
of wurtzite Al1-XSiXN ternary
alloys”, Appl. Phys. Lett.
79, 4351 (2001).
MOVPE growth mechanisms of nitride semiconductors
·
Y. Taniyasu, M. Kasu, and T. Makimoto, "Threading dislocations in heteroepitaxial AlN layer grown
by MOVPE on SiC (0001) substrate", Journal of
Crystal Growth 298, 315 (2007).
·
Y. Taniyasu and A. Yoshikawa,
“In-situ Monitoring of Surface Stoichiometry and
Growth Kinetics Study of GaN (0001) in MOVPE by Spectroscopic Ellipsometry”, J. Elect. Mater.
30, 1402 (2001).
Nitride / Diamond heterostructure
·
K. Hirama, Y. Taniyasu, and M. Kasu, “AlGaN/GaN high-electron mobility
transistors with low thermal resistance grown on single-crystal diamond (111) substrates
by metalorganic vapor-phase epitaxys”,
Appl. Phys. Lett. 98, 162112
(2011).
·
K. Hirama, Y. Taniyasu, and M. Kasu, “Electroluminescence and capacitance-voltage characteristics
of single crystal n-type AlN (0001)/p-type diamond
(111) heterojunction diodes”, Appl.
Phys. Lett. 98, 011908 (2011).
·
K. Hirama, Y. Taniyasu, and M. Kasu, “Heterostructure growth of
a single-crystal hexagonal AlN (0001) layer on cubic
diamond (111) surface”, J. Appl. Phys. 108, 013528
(2010).
·
Y. Taniyasu and M. Kasu,
"MOVPE growth of single-crystal hexagonal AlN on
cubic diamond", Journal of Crystal Growth 311, 2825-2830 (2009).
Cubic InGaN
LED
·
Y. Taniyasu, K. Suzuki, D. H.
Lim, A. W. Jia, M. Shimotomai,
Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Cubic InGaN/GaN Double-Heterostructure
Light Emitting Diodes Grown on GaAs (001) Substrates
by MOVPE”, phys. stat. sol. (a) 180,
241 (2000)
Awards
u
Young
Scientist Award
“Seminal Contributions to the Growth of AlN and its Application to the Shortest Wavelength Light
Emitting Diodes”
The International
Symposium on Compound Semiconductors 2011
u
Young
Scientists’ Prize
The Minister of
Education, Culture, Sports, Science and Technology (MEXT),
u
Young
Scientist Award
“For outstanding contributions in
developing and implementing Aluminum Nitride deep-ultraviolet light-emitting
diodes”
14th Semiconducting and Insulating Materials Conferences (SIMC
XIV)
u
Young
Scientist Award for the Presentation of an Excellent Paper at Japan Society of
Applied Physics (JSAP) meeting
Research Funding
Grant-in-Aid for
Young Scientists (A) from MEXT (The Ministry of Education, Culture, Sports,
Science and Technology),
Period: Apr. 2007
- Mar. 2010 (3 years)
Conference committee
Ø
Conference
on Lasers and Electro-Optics (CLEO) 2009-2011 Program committee member
Ø
Second
International Symposium on Growth of III-Nitrides (ISGN-2) Program committee
member
Ø
International
Workshop on Nitride Semiconductors (IWN2006) Program committee member
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa, 243-0198
