Publications

  1. C. Salhani, K. Chida, T. Shimizu, T. Hayashi and K. Nishiguchi,
    "Heat-dissipation decomposition and free-energy generation in a non-equilibrium dot with multi-electron states",
    Phys. Rev. Res. 8, 023209 (2026). DOI: 10.1103/947j-vvk2

  2. T. Hayashi, Y. Tokura and K. Nishiguchi,
    "Effective Medium Approximation for Variable-Range Hopping",
    J. Phys. Soc. Jpn. 94, 044001 (2025). DOI: 10.7566/JPSJ.94.044001

  3. C. Salhani, K. Chida, T. Shimizu, T. Hayashi and K. Nishiguchi,
    "Sensing an alternating-current signal beyond the cutoff frequency using a single-electron dynamic random-access memory",
    Phys. Rev. Appl. 23, L021001 (2025). DOI: 10.1103/PhysRevApplied.23.L021001

  4. T. Hayashi, H. Kageshima, Y. Tokura, J. Noborisaka and K. Nishiguchi,
    "First-principles investigation of the valley splitting of Si quantum slabs",
    Phys. Status Solidi B 262, 2400531 (2024). DOI: 10.1002/pssb.202400531

  5. J. Noborisaka, T. Hayashi, A. Fujiwara and K. Nishiguchi,
    "Valley splitting by extended zone effective mass approximation incorporating strain in silicon",
    J. Appl. Phys. 135, 204302 (2024). DOI: 10.1063/5.0173578

  6. T. Hayashi, Y. Tokura and K. Nishiguchi,
    "Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime",
    J. Phys. Soc. Jpn. 92, 034001 (2023). DOI: 10.7566/JPSJ.92.034001

  7. T. Hayashi, Y. Tokura and A. Fujiwara,
    "Field-dependent hopping conduction",
    Physica B 541, 19 (2018). DOI: 10.1016/j.physb.2018.04.019

  8. T. Hayashi, A. Naka, M. Hiroki, T. Yokota, T. Someya and A. Fujiwara,
    "Transport characteristics in Au/pentacene/Au diodes",
    Jpn. J. Appl. Phys. 57, 03EH07 (2018). DOI: 10.7567/JJAP.57.03EH07

  9. T. Hayashi, N. Take, H. Nakano, A. Fujiwara, T. Sekitani and T. Someya,
    "Study of Randomly Distributed Charge Traps by Measuring Frequency- and Time-Dependence of a DNTT-Based MIS Capacitor",
    J. Disp. Tech. 11, 604 (2015). DOI: 10.1109/JDT.2015.2419274

  10. T. Hayashi, N. Take, H. Tamura, T. Sekitani and T. Someya,
    "Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors",
    J. Appl. Phys. 115, 093702 (2014). DOI: 10.1063/1.4867521

  11. T. Fujisawa, G. Shinkai, T. Hayashi, and T. Ota,
    "Multiple two-qubit operations for a coupled semiconductor charge qubit",
    Physica E 43, 730 (2011). DOI: 10.1016/j.physe.2010.07.040

  12. G. Shinkai, T. Hayashi, T. Ota, K. Muraki, and T. Fujisawa,
    "Bidirectional Current Drag Induced by Two-Electron Cotunneling in Coupled Double Quantum Dots",
    APEX2, 081101 (2009). DOI: 10.1143/APEX.2.081101

  13. G. Shinkai, T. Hayashi, T. Ota, and T. Fujisawa,
    "Correlated Coherent Oscillations in Coupled Semiconductor Charge Qubits",
    Phys. Rev. Lett. 103, 056802 (2009). DOI: 10.1103/PhysRevLett.103.056802

  14. F. Prins, T. Hayashi, B. J. A. de Vos van Steenwijk, B. Gao, E. A. Osorio, K. Muraki, and H. S. J. van der Zant,
    "Room-temperature stability of Pt nanogaps formed by self-breaking",
    Appl. Phys. Lett. 94, 123108 (2009). DOI: 10.1063/1.3109784

  15. T. Hayashi and T. Fujisawa,
    "Voltage-pulse-induced electromigration",
    Nanotechnology 19, 145709 (2008). DOI: 10.1088/0957-4484/19/14/145709

  16. K. Grove-Rasmussen, H. I. Jorgensen, T. Hayashi, P. E. Lindelof, and T. Fujisawa,
    "A Triple Quantum Dot in a Single-Wall Carbon Nanotube",
    Nano Letters 8, 1055 (2008). DOI: 10.1021/nl072948y

  17. T. Fujisawa, G. Shinkai, and T. Hayashi,
    "Spin-conserved Single-electron Transport between Zeeman Sublevels in a Few-electron Quantum Dot",
    Jpn. J. Appl. Phys. 47, 3107 (2008). DOI: 10.1143/JJAP.47.3107

  18. T. Fujisawa, G. Shinkai and T. Hayashi,
    "Zeeman Splitting in Single-electron Transport through a Few-electron Quantum Dot",
    Phys. Rev. B 76, 041302 (2007). DOI: 10.1103/PhysRevB.76.041302

  19. G. Shinkai, T. Hayashi, Y. Hirayama and T. Fujisawa,
    "Controlled resonant tunneling in a coupled double-quantum-dot system",
    Appl. Phys. Lett. 90, 103116 (2007). DOI: 10.1063/1.2709905

  20. T. Fujisawa, T. Hayashi, R. Tomita and Y. Hirayama,
    "Bidirectional Counting of Single Electrons",
    Science 312, 1634 (2006). DOI: 10.1126/science.1126788

  21. T. Hayashi, T. Fujisawa, R. Tomita and Y. Hirayama,
    "Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot",
    Jpn. J. Appl. Phys. 45, 3629 (2006). DOI: 10.1143/JJAP.45.3629

  22. T. Fujisawa, T. Hayashi, and S. Sasaki,
    "Time-dependent single-electron transport through quantum dots",
    Rep. Prog. Phys. 69, 759 (2006). DOI: 10.1088/0034-4885/69/3/R05

  23. H. W. Liu, T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Pauli spin blockade in cotunneling transport through a double quantum dot",
    Phys. Rev. B 72, 161305(R) (2005). DOI: 10.1103/PhysRevB.72.161305

  24. S. Sasaki, T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Electrical Pump-and-Probe Study of Spin Singlet-Triplet Relaxation in a Quantum Dot",
    Phys. Rev. Lett. 95, 056803 (2005). DOI: 10.1103/PhysRevLett.95.056803

  25. T. Fujisawa, T. Hayashi, Y. Hirayama, H. D. Cheong and Y. H. Jeong,
    "Electron counting of single-electron tunneling current",
    Appl. Phys. Lett. 84, 2343 (2004). DOI: 10.1063/1.1691491

  26. T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Controlled decoherence of a charge qubit in a double quantum dot",
    J. Vac. Sci. Tech. B 22, 2035 (2004). DOI: 10.1116/1.1771679

  27. T. Fujisawa, T. Hayashi, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
    "Rotation and phase-shift operations for a charge qubit in a double quantum dot",
    Physica E 21, 1046 (2004). DOI: 10.1016/j.physe.2003.11.184

  28. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
    "Coherent Charge Oscillation in a Semiconductor Double Quantum Dot",
    IEEE Trans. Nanotech. 3, 300 (2004). DOI: 10.1109/TNANO.2004.828551

  29. T. Hayashi, T. Fujisawa and Y. Hirayama,
    "Coherent charge oscillation in a semiconductor double quantum dot",
    in Quantum Information and Decoherence in Nanosystems edited by D. C. Glattli, M. Sanquer and J. T. T. Van (The Gioi 2004) p. 173.

  30. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
    "Coherent Manipulation of Electronic States in a Double Quantum Dot",
    Phys. Rev. Lett. 91, 226804 (2003). DOI: 10.1103/PhysRevLett.91.226804

  31. T. Hayashi, T. Fujisawa and Y. Hirayama,
    "Investigation of spin state in a quantum dot by using strongly asymmetric tunnel barriers",
    phys. stat. sol. (b) 238, 262 (2003). DOI: 10.1002/pssb.200303024

  32. H. D. Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama and Y. H. Jeong,
    "Impedance analysis of a radio-frequency single-electron transistor",
    Appl. Phys. Lett. 81, 3257 (2002). DOI: 10.1063/1.1515883

  33. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A Fujimori, T. Hayashi, and M. Tanaka,
    "Angle-resolved photoemission study of Ga1-x Mnx As",
    Phys. Rev. B 64, 125304 (2001). DOI: 10.1103/PhysRevB.64.125304

  34. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A Fujimori, T. Hayashi, and M. Tanaka,
    "Electronic structure of Ga1-x Mnx As studied by angle-resolved photoemission spectroscopy",
    Physica E, 10 pp. 192 - 195 (2001). DOI: 10.1016/S1386-9477(01)00080-7

  35. T. Hayashi, M. Tanaka, A. Asamitsu,
    "Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction",
    J. Appl. Phys. 87, pp. 4673 - 4675 (2000). DOI: 10.1063/1.373126

  36. J. Okabayashi, A. Kimura, T. Mizokawa, A Fujimori, T. Hayashi, and M. Tanaka,
    "Mn 3d Partial Density of States in (GaMn)As Studied by Resonance Photoemission Spectroscopy",
    Phys. Rev. B59, pp. R2486 - R2489 (1999). DOI: 10.1103/PhysRevB.59.R2486

  37. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka,
    "Properties of III-V Based Ferromagnetic Semiconductor (Ga1-xMnx)As: As Pressure Dependence",
    J. Magn. Soc. Jpn. 23, pp. 96 - 98 (1999). DOI: 10.3379/jmsjmag.23.96

  38. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka,
    "Magnetic and Transport Properties of III-V Based Magnetic Semiconductor (GaMn)As: Growth Condition Dependence",
    Appl. Phys. Lett. 74, pp. 398 - 400 (1999). DOI: 10.1063/1.123082

  39. T. Hayashi, H. Shimada, H. Shimizu and M. Tanaka,
    "Tunneling Spectroscopy and Magnetoresistance in (GaMn)As / AlAs / (GaMn)As Ultarathin Magnetic Semiconductor Heterostructures",
    J. Crystal Growth 201/202, pp. 689 - 692 (1999). DOI: 10.1016/S0022-0248(98)01440-7

  40. J. Okagayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi and M. Tanaka,
    "Core-level photoemission study of Ga1-xMnxAs",
    Phy. Rev. B58, pp. R4211 - R4214 (1998). DOI: 10.1103/PhysRevB.58.R4211

  41. R. Shioda, K. Ando. T. Hayashi and M. Tanaka,
    "Local Structures of III-V Diluted Mangetic Semiconductor GaMnAs Studied by Extended X-ray Absorption Fine Structure",
    Phys. Rev. B58, pp. 1100 - 1102 (1998). DOI: 10.1103/PhysRevB.58.1100

  42. K. Ando, T. Hayashi, M. Tanaka and A. Twardowski,
    "Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Ga1-xMnxAs",
    J. Appl. Phys. 83, pp. 6548 - 6550 (1998). DOI: 10.1063/1.367780

  43. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada, H. Hayashi and K. Niihara,
    "Magnetotransport Properties of New III-V Based Magnetic (GaMnAs) / Nonmagnetic (AlAs) Semiconductor Superlattices",
    Physica E2, pp. 404 - 407 (1998). 10.1016/S1386-9477(98)00083-6

  44. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada and K. Ando,
    "Hall Effect and Magnetic Properties of III-V Based (Ga1-xMnx)As / AlAs Magnetic Semiconductor Superlattices",
    J. Appl. Phys. 83, pp. 6551 - 6553 (1998). DOI: 10.1063/1.367577

  45. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga and K. Ando,
    "New III-V Based Magnetic (GaMnAs) / Nonmagnetic (AlAs) Semiconductor Superlattices",
    Appl. Phys. Lett. 71, pp. 1825 - 1827 (1997). DOI: 10.1063/1.119411

  46. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada,
    "Magnetic and Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor: GaMnAs",
    J. Appl. Phys. 81, pp. 4865 - 4867 (1997). DOI: 10.1063/1.364859

  47. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada,
    "GaMnAs: New III-V Based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy",
    J. Crystal Growth 175/176, pp. 1063 - 1068 (1997). DOI: 10.1016/S0022-0248(96)00937-2