publications

40. T. Hayashi, Y. Tokura and A. Fujiwara,
"Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime",
J. Phys. Soc. Jpn. 92, 034001 (2023).

39. T. Hayashi, Y. Tokura and A. Fujiwara,
"Field-dependent hopping conduction",
Physica B 541, 19 (2018).

38. T. Hayashi, A. Naka, M. Hiroki, T. Yokota, T. Someya and A. Fujiwara,
"Transport characteristics in Au/pentacene/Au diodes",
Jpn. J. Appl. Phys. 57, 03EH07 (2018).

37. T. Hayashi, N. Take, H. Nakano, A. Fujiwara, T. Sekitani and T. Someya,
"Study of Randomly Distributed Charge Traps by Measuring Frequency- and Time-Dependence of a DNTT-Based MIS Capacitor",
J. Disp. Tech. 11, 604 (2015).

36. T. Hayashi, N. Take, H. Tamura, T. Sekitani and T. Someya,
"Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors",
J. Appl. Phys. 115, 093702 (2014).

35. T. Fujisawa, G. Shinkai, T. Hayashi, and T. Ota,
"Multiple two-qubit operations for a coupled semiconductor charge qubit",
Physica E 43, 730 (2011).

34. G. Shinkai, T. Hayashi, T. Ota, K. Muraki, and T. Fujisawa,
"Bidirectional Current Drag Induced by Two-Electron Cotunneling in Coupled Double Quantum Dots",
APEX2, 081101 (2009).

33. G. Shinkai, T. Hayashi, T. Ota, and T. Fujisawa,
"Correlated Coherent Oscillations in Coupled Semiconductor Charge Qubits",
Phys. Rev. Lett. 103, 056802 (2009).

32. F. Prins, T. Hayashi, B. J. A. de Vos van Steenwijk, B. Gao, E. A. Osorio, K. Muraki, and H. S. J. van der Zant,
"Room-temperature stability of Pt nanogaps formed by self-breaking",
Appl. Phys. Lett. 94, 123108 (2009).

31. T. Hayashi and T. Fujisawa,
"Voltage-pulse-induced electromigration",
Nanotechnology 19, 145709 (2008).

30. K. Grove-Rasmussen, H. I. Jorgensen, T. Hayashi, P. E. Lindelof, and T. Fujisawa,
"A Triple Quantum Dot in a Single-Wall Carbon Nanotube",
Nano Letters 8, 1055 (2008).

29. T. Fujisawa, G. Shinkai, and T. Hayashi,
"Spin-conserved Single-electron Transport between Zeeman Sublevels in a Few-electron Quantum Dot",
Jpn. J. Appl. Phys. 47, 3107 (2008).

28. T. Fujisawa, G. Shinkai and T. Hayashi,
"Zeeman Splitting in Single-electron Transport through a Few-electron Quantum Dot",
Phys. Rev. B 76, 041302 (2007).

27. G. Shinkai, T. Hayashi, Y. Hirayama and T. Fujisawa,
"Controlled resonant tunneling in a coupled double-quantum-dot system",
Appl. Phys. Lett. 90, 103116 (2007).

26. T. Fujisawa, T. Hayashi, R. Tomita and Y. Hirayama,
"Bidirectional Counting of Single Electrons",
Science 16, 1634 (2006).

25. T. Hayashi, T. Fujisawa, R. Tomita and Y. Hirayama,
"Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot",
Jpn. J. Appl. Phys. 45 3629 (2006).

24. T. Fujisawa, T. Hayashi and S. Sasaki,
"Time-dependent single-electron transport through quantum dots",
Rep. Prog. Phys. 69 759 (2006).

23. H. W. Liu, T. Fujisawa, T. Hayashi and Y. Hirayama,
"Pauli spin blockade in cotunneling transport through a double quantum dot",
Phys. Rev. B 72, 161305(R) (2005).

22. S. Sasaki, T. Fujisawa, T. Hayashi and Y. Hirayama,
"Electrical Pump-and-Probe Study of Spin Singlet-Triplet Relaxation in a Quantum Dot",
Phys. Rev. Lett. 95, 056803 (2005).

21. T. Fujisawa, T. Hayashi, Y. Hirayama, H. D. Cheong and Y. H. Jeong,
"Electron counting of single-electron tunneling current",
Appl. Phys. Lett. 84, 2343 (2004).

20. T. Fujisawa, T. Hayashi and Y. Hirayama,
"Controlled decoherence of a charge qubit in a double quantum dot",
J. Vac. Sci. Tech. B 22, 2035 (2004).

19. T. Fujisawa, T. Hayashi, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
"Rotation and phase-shift operations for a charge qubit in a double quantum dot",
Physica E 21, 1046 (2004).

18. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
"Coherent Charge Oscillation in a Semiconductor Double Quantum Dot",
IEEE Trans. Nanotech. 3, 300 (2004).

17. T. Hayashi, T. Fujisawa and Y. Hirayama,
"Coherent charge oscillation in a semiconductor double quantum dot",
in Quantum Information and Decoherence in Nanosystems edited by D. C. Glattli, M. Sanquer and J. T. T. Van (The Gioi 2004) p. 173.

16. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
"Coherent Manipulation of Electronic States in a Double Quantum Dot",
Phys. Rev. Lett. 91, 226804 (2003).

15. T. Hayashi, T. Fujisawa and Y. Hirayama,
"Investigation of spin state in a quantum dot by using strongly asymmetric tunnel barriers",
phys. stat. sol. (b) 238, 262 (2003).

14. H. D. Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama and Y. H. Jeong,
"Impedance analysis of a radio-frequency single-electron transistor",
Appl. Phys. Lett. 81, 3257 (2002).

13. T. Hayashi, M. Tanaka, A. Asamitsu,
"Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction",
J. Appl. Phys. 87, pp. 4673 - 4675 (2000).

12. J. Okabayashi, A. Kimura, T. Mizokawa, A Fujimori, T. Hayashi and M. Tanaka,
"Mn 3d Partial Density of States in (GaMn)As Studied by Resonance Photoemission Spectroscopy",
Phys. Rev. B59, pp. R2486 - R2489 (1999).

11. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka,
"Properties of III-V Based Ferromagnetic Semiconductor (Ga1-xMnx)As: As Pressure Dependence",
J. Magn. Soc. Jpn. 23, pp. 96 - 98 (1999).

10. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka,
"Magnetic and Transport Properties of III-V Based Magnetic Semiconductor (GaMn)As: Growth Condition Dependence",
Appl. Phys. Lett. 74, pp. 398 - 400 (1999).

9. T. Hayashi, H. Shimada, H. Shimizu and M. Tanaka,
"Tunneling Spectroscopy and Magnetoresistance in (GaMn)As / AlAs / (GaMn)As Ultarathin Magnetic Semiconductor Heterostructures",
J. Crystal Growth 201/202, pp. 689 - 692 (1999).

8. J. Okagayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi and M. Tanaka,
"Core-level photoemission study of Ga_1-xMn_xAs",
Phy. Rev. B58, pp. R4211 - R4214 (1998).

7. R. Shioda, K. Ando. T. Hayashi and M. Tanaka,
"Local Structures of III-V Diluted Mangetic Semiconductor GaMnAs Studied by Extended X-ray Absorption Fine Structure",
Phys. Rev. B58, pp. 1100 - 1102 (1998).

6. K. Ando, T. Hayashi, M. Tanaka and A. Twardowski,
"Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Ga_1-xMn_xAs",
J. Appl. Phys. 83, pp. 6548 - 6550 (1998).

5. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada, H. Hayashi and K. Niihara,
"Magnetotransport Properties of New III-V Based Magnetic (GaMnAs) / Nonmagnetic (AlAs) Semiconductor Superlattices",
Physica E2, pp. 404 - 407 (1998).

4. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada and K. Ando,
"Hall Effect and Magnetic Properties of III-V Based (Ga_1-xMn_x)As / AlAs Magnetic Semiconductor Superlattices",
J. Appl. Phys. 83, pp. 6551 - 6553 (1998).

3. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga and K. Ando,
"New III-V Based Magnetic (GaMnAs) / Nonmagnetic (AlAs) Semiconductor Superlattices",
Appl. Phys. Lett. 71, pp. 1825 - 1827 (1997).

2. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada,
"Magnetic and Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor: GaMnAs",
J. Appl. Phys. 81, pp. 4865 - 4867 (1997).

1. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada,
"GaMnAs: New III-V Based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy",
J. Crystal Growth 175/176, pp. 1063 - 1068 (1997).