Publications

  1. C. Salhani, K. Chida, T. Shimizu, T. Hayashi and K. Nishiguchi,
    "Heat-dissipation decomposition and free-energy generation in a nonequilibrium dot with multiple electron states",
    Phys. Rev. Res. 8, 023209 (2026). DOI: 10.1103/947j-vvk2

  2. T. Hayashi, Y. Tokura and K. Nishiguchi,
    "Effective Medium Approximation for Variable-Range Hopping",
    J. Phys. Soc. Jpn. 94, 044001 (2025). DOI: 10.7566/JPSJ.94.044001

  3. C. Salhani, K. Chida, T. Shimizu, T. Hayashi and K. Nishiguchi,
    "Sensing an alternating-current signal beyond the cutoff frequency using a single-electron dynamic random-access memory",
    Phys. Rev. Appl. 23, L021001 (2025). DOI: 10.1103/PhysRevApplied.23.L021001

  4. T. Hayashi, H. Kageshima, Y. Tokura, J. Noborisaka and K. Nishiguchi,
    "First-principles investigation of the valley splitting of Si quantum slabs",
    Phys. Status Solidi B 262, 2400531 (2025). DOI: 10.1002/pssb.202400531

  5. J. Noborisaka, T. Hayashi, A. Fujiwara and K. Nishiguchi,
    "Valley splitting by extended zone effective mass approximation incorporating strain in silicon",
    J. Appl. Phys. 135, 204302 (2024). DOI: 10.1063/5.0173578

  6. T. Hayashi, Y. Tokura and K. Nishiguchi,
    "Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime",
    J. Phys. Soc. Jpn. 92, 034001 (2023). DOI: 10.7566/JPSJ.92.034001

  7. T. Hayashi, Y. Tokura and A. Fujiwara,
    "Field-dependent hopping conduction",
    Physica B 541, 19 (2018). DOI: 10.1016/j.physb.2018.04.019

  8. T. Hayashi, A. Naka, M. Hiroki, T. Yokota, T. Someya and A. Fujiwara,
    "Transport characteristics in Au/pentacene/Au diodes",
    Jpn. J. Appl. Phys. 57, 03EH07 (2018). DOI: 10.7567/JJAP.57.03EH07

  9. T. Hayashi, N. Take, H. Nakano, A. Fujiwara, T. Sekitani and T. Someya,
    "Study of Randomly Distributed Charge Traps by Measuring Frequency- and Time-Dependence of a DNTT-Based MIS Capacitor",
    J. Disp. Tech. 11, 604 (2015). DOI: 10.1109/JDT.2015.2419274

  10. T. Hayashi, N. Take, H. Tamura, T. Sekitani and T. Someya,
    "Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors",
    J. Appl. Phys. 115, 093702 (2014). DOI: 10.1063/1.4867521

  11. T. Fujisawa, G. Shinkai, T. Hayashi, and T. Ota,
    "Multiple two-qubit operations for a coupled semiconductor charge qubit",
    Physica E 43, 730 (2011). DOI: 10.1016/j.physe.2010.07.040

  12. T. Ota, T. Hayashi, K. Muraki, and T. Fujisawa,
    "Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics",
    Appl. Phys. Lett. 96, 032104 (2010). DOI: 10.1063/1.3285180

  13. G. Shinkai, T. Hayashi, T. Ota, K. Muraki, and T. Fujisawa,
    "Bidirectional Current Drag Induced by Two-Electron Cotunneling in Coupled Double Quantum Dots",
    APEX2, 081101 (2009). DOI: 10.1143/APEX.2.081101

  14. G. Shinkai, T. Hayashi, T. Ota, and T. Fujisawa,
    "Correlated Coherent Oscillations in Coupled Semiconductor Charge Qubits",
    Phys. Rev. Lett. 103, 056802 (2009). DOI: 10.1103/PhysRevLett.103.056802

  15. F. Prins, T. Hayashi, B. J. A. de Vos van Steenwijk, B. Gao, E. A. Osorio, K. Muraki, and H. S. J. van der Zant,
    "Room-temperature stability of Pt nanogaps formed by self-breaking",
    Appl. Phys. Lett. 94, 123108 (2009). DOI: 10.1063/1.3109784

  16. T. Hayashi and T. Fujisawa,
    "Voltage-pulse-induced electromigration",
    Nanotechnology 19, 145709 (2008). DOI: 10.1088/0957-4484/19/14/145709

  17. K. Grove-Rasmussen, H. I. Jorgensen, T. Hayashi, P. E. Lindelof, and T. Fujisawa,
    "A Triple Quantum Dot in a Single-Wall Carbon Nanotube",
    Nano Letters 8, 1055 (2008). DOI: 10.1021/nl072948y

  18. T. Fujisawa, G. Shinkai, and T. Hayashi,
    "Spin-conserved Single-electron Transport between Zeeman Sublevels in a Few-electron Quantum Dot",
    Jpn. J. Appl. Phys. 47, 3107 (2008). DOI: 10.1143/JJAP.47.3107

  19. T. Fujisawa, G. Shinkai and T. Hayashi,
    "Zeeman Splitting in Single-electron Transport through a Few-electron Quantum Dot",
    Phys. Rev. B 76, 041302 (2007). DOI: 10.1103/PhysRevB.76.041302

  20. G. Shinkai, T. Hayashi, Y. Hirayama and T. Fujisawa,
    "Controlled resonant tunneling in a coupled double-quantum-dot system",
    Appl. Phys. Lett. 90, 103116 (2007). DOI: 10.1063/1.2709905

  21. T. Fujisawa, T. Hayashi, R. Tomita and Y. Hirayama,
    "Bidirectional Counting of Single Electrons",
    Science 312, 1634 (2006). DOI: 10.1126/science.1126788

  22. T. Hayashi, T. Fujisawa, R. Tomita and Y. Hirayama,
    "Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot",
    Jpn. J. Appl. Phys. 45, 3629 (2006). DOI: 10.1143/JJAP.45.3629

  23. T. Fujisawa, T. Hayashi, and S. Sasaki,
    "Time-dependent single-electron transport through quantum dots",
    Rep. Prog. Phys. 69, 759 (2006). DOI: 10.1088/0034-4885/69/3/R05

  24. H. W. Liu, T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Pauli blockade transport in the cotunneling regime through a double quantum dot",
    Phys. Status Solidi C 3, 3766 (2006). DOI: 10.1002/pssc.200671532

  25. H. W. Liu, T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Pauli spin blockade in cotunneling transport through a double quantum dot",
    Phys. Rev. B 72, 161305(R) (2005). DOI: 10.1103/PhysRevB.72.161305

  26. S. Sasaki, T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Electrical Pump-and-Probe Study of Spin Singlet-Triplet Relaxation in a Quantum Dot",
    Phys. Rev. Lett. 95, 056803 (2005). DOI: 10.1103/PhysRevLett.95.056803

  27. T. Fujisawa, T. Hayashi, Y. Hirayama, H. D. Cheong and Y. H. Jeong,
    "Electron counting of single-electron tunneling current",
    Appl. Phys. Lett. 84, 2343 (2004). DOI: 10.1063/1.1691491

  28. T. Fujisawa, T. Hayashi, and Y. Hirayama,
    "Controlled decoherence of a charge qubit in a double quantum dot",
    J. Vac. Sci. Tech. B 22, 2035 (2004). DOI: 10.1116/1.1771679

  29. T. Fujisawa, T. Hayashi, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
    "Rotation and phase-shift operations for a charge qubit in a double quantum dot",
    Physica E 21, 1046 (2004). DOI: 10.1016/j.physe.2003.11.184

  30. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
    "Coherent Charge Oscillation in a Semiconductor Double Quantum Dot",
    IEEE Trans. Nanotech. 3, 300 (2004). DOI: 10.1109/TNANO.2004.828551

  31. O. Rader, C. Pampuch, A. M. Shikin, W. Gudat, J. Okabayashi, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka, A. Tanaka and A. Kimura,
    "Resonant photoemission of Ga1-x Mnx As at the Mn L edge",
    Phys. Rev. B 69, 075202 (2004). DOI: 10.1103/PhysRevB.69.075202

  32. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong and Y. Hirayama,
    "Coherent Manipulation of Electronic States in a Double Quantum Dot",
    Phys. Rev. Lett. 91, 226804 (2003). DOI: 10.1103/PhysRevLett.91.226804

  33. T. Hayashi, T. Fujisawa and Y. Hirayama,
    "Investigation of spin state in a quantum dot by using strongly asymmetric tunnel barriers",
    phys. stat. sol. (b) 238, 262 (2003). DOI: 10.1002/pssb.200303024

  34. H. D. Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama and Y. H. Jeong,
    "Impedance analysis of a radio-frequency single-electron transistor",
    Appl. Phys. Lett. 81, 3257 (2002). DOI: 10.1063/1.1515883

  35. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A Fujimori, T. Hayashi, and M. Tanaka,
    "Angle-resolved photoemission study of Ga1-x Mnx As",
    Phys. Rev. B 64, 125304 (2001). DOI: 10.1103/PhysRevB.64.125304

  36. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A Fujimori, T. Hayashi, and M. Tanaka,
    "Electronic structure of Ga1-x Mnx As studied by angle-resolved photoemission spectroscopy",
    Physica E, 10 pp. 192 - 195 (2001). DOI: 10.1016/S1386-9477(01)00080-7

  37. T. Hayashi, M. Tanaka, A. Asamitsu,
    "Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction",
    J. Appl. Phys. 87, pp. 4673 - 4675 (2000). DOI: 10.1063/1.373126

  38. M. Tanaka, H. Shimizu, T. Hayashi, H. Shimada and K. Ando,
    "Ferromagnetic semiconductor heterostructures based on (GaMn)As",
    J. Vac. Sci. Technol. A 18, pp. 1247 - 1253 (2000). DOI: 10.1116/1.582334

  39. J. Okabayashi, A. Kimura, T. Mizokawa, A Fujimori, T. Hayashi, and M. Tanaka,
    "Mn 3d Partial Density of States in (GaMn)As Studied by Resonance Photoemission Spectroscopy",
    Phys. Rev. B59, pp. R2486 - R2489 (1999). DOI: 10.1103/PhysRevB.59.R2486

  40. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka,
    "Properties of III-V Based Ferromagnetic Semiconductor (Ga1-xMnx)As: As Pressure Dependence",
    J. Magn. Soc. Jpn. 23, pp. 96 - 98 (1999). DOI: 10.3379/jmsjmag.23.96

  41. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka,
    "Magnetic and Transport Properties of III-V Based Magnetic Semiconductor (GaMn)As: Growth Condition Dependence",
    Appl. Phys. Lett. 74, pp. 398 - 400 (1999). DOI: 10.1063/1.123082

  42. T. Hayashi, H. Shimada, H. Shimizu and M. Tanaka,
    "Tunneling Spectroscopy and Magnetoresistance in (GaMn)As / AlAs / (GaMn)As Ultarathin Magnetic Semiconductor Heterostructures",
    J. Crystal Growth 201/202, pp. 689 - 692 (1999). DOI: 10.1016/S0022-0248(98)01440-7

  43. J. Okagayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi and M. Tanaka,
    "Core-level photoemission study of Ga1-xMnxAs",
    Phy. Rev. B58, pp. R4211 - R4214 (1998). DOI: 10.1103/PhysRevB.58.R4211

  44. R. Shioda, K. Ando. T. Hayashi and M. Tanaka,
    "Local Structures of III-V Diluted Mangetic Semiconductor GaMnAs Studied by Extended X-ray Absorption Fine Structure",
    Phys. Rev. B58, pp. 1100 - 1102 (1998). DOI: 10.1103/PhysRevB.58.1100

  45. K. Ando, T. Hayashi, M. Tanaka and A. Twardowski,
    "Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Ga1-xMnxAs",
    J. Appl. Phys. 83, pp. 6548 - 6550 (1998). DOI: 10.1063/1.367780

  46. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada, H. Hayashi and K. Niihara,
    "Magnetotransport Properties of New III-V Based Magnetic (GaMnAs) / Nonmagnetic (AlAs) Semiconductor Superlattices",
    Physica E2, pp. 404 - 407 (1998). 10.1016/S1386-9477(98)00083-6

  47. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada and K. Ando,
    "Hall Effect and Magnetic Properties of III-V Based (Ga1-xMnx)As / AlAs Magnetic Semiconductor Superlattices",
    J. Appl. Phys. 83, pp. 6551 - 6553 (1998). DOI: 10.1063/1.367577

  48. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga and K. Ando,
    "New III-V Based Magnetic (GaMnAs) / Nonmagnetic (AlAs) Semiconductor Superlattices",
    Appl. Phys. Lett. 71, pp. 1825 - 1827 (1997). DOI: 10.1063/1.119411

  49. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada,
    "Magnetic and Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor: GaMnAs",
    J. Appl. Phys. 81, pp. 4865 - 4867 (1997). DOI: 10.1063/1.364859

  50. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada,
    "GaMnAs: New III-V Based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy",
    J. Crystal Growth 175/176, pp. 1063 - 1068 (1997). DOI: 10.1016/S0022-0248(96)00937-2