(1) “Isolating individual chains of selenium
by incorporation into the channels of a zeolite”
O. Terasaki,
K. Yamazaki, J. M. Thomas, T. Ohsuna, D.
Watanabe, J. V. Sandars and J. C. Barry
Nature 330,
58 (1987).
(2) “The incorporation of selenium into the
channels of mordenite: An electron microscopic study”
O. Terasaki,
K. Yamazaki, J. M. Thomas, T. Ohsuna, D.
Watanabe, J. V. Sanders and J. C. Barry
J.
(3) “Absorption spectra of selenium clusters
and chains incorporated into zeolites”
Y. Nozue,
T. Kodaira, O. Terasaki, K.
Yamazaki, T. Goto, D. Watanabe, J. M. Thomas
J. Phys.: Condens.
Matter 2, 5209 (1990).
(4) “Nanometer-scale linewidth
fluctuations caused by polymer aggregates in resist films”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
Appl. Phys. Lett. 71, 2388 (1997).
(5) “Silicon double-island single-electron
device”
A. Fujiwara, Y. Takahashi, K.
Yamazaki, H. Namatsu, M. Nagase, K. Kurihara and K. Murase
Tech. Dig. IEDM
(1997) 163.
(6) “Linewidth
fluctuations caused by polymer aggregates in resist films”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, K. Kurihara
J. Photopolym.
Sci. Technol, 10, 635
(1997).
(7) “Nano-patterning
of a hydrogen silsesquioxane resist
with reduced linewidth fluctuations”
H. Namatsu,
T. Yamaguchi, M. Nagase, K. Yamazaki and K. Kurihara
Microelectron.
(8) “Si nanostructures formed by
pattern-dependent oxidation”
M. Nagase, A. Fujiwara, K.
Yamazaki, Y. Takahashi, K. Murase and K. Kurihara
Microelectron.
(9) “Three-dimensional siloxane resist for the
formation of nanopatterns with minimum linewidth fluctuations”
H. Namatsu,
Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase and K. Kurihara
J. Vac. Sci.
Technol. B 16, 69 (1998).
(10) “Influence of edge roughness in resist
patterns on etched patterns”
H.
Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki
and K. Kurihara
J. Vac. Sci. Technol. B 16, 3315
(1998).
(11)
“Si memory device operated with a small number of electrons by using a
single-electron- transistor detector”
Y.
Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu,
K. Kurihara and K. Murase
IEE Electron.
Lett.
34, 45 (1998).
(12)
“A multi-gate single-electron transistor and its application to an
exclusive-OR gate”
Y.
Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu,
K. Kurihara and K. Murase
Tech.
Dig. IEDM (1998) 127.
(13) “New development model: aggregate
extraction development”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
Proc. SPIE 3333,
830 (1998).
(14) “Fabrication method for IC-oriented Si
twin-island single-electron transistors”
Y. Ono, Y. Takahashi, K.
Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Tech. Dig. IEDM
(1998) 123.
(15) “Supercritical drying for nanostructure
fabrication without pattern collapse”,
H. Namatsu,
K. Yamazaki and K. Kurihara
Microelectron.
(16) “A new approach to
reducing line-edge roughness by using a cross-linked positive-tone resist”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
Jpn. J. Appl.
Phys. 38, 7114 (1999).
(17) “Effect of chelating agents on high
resolution electron beam nanolithography of spin-coatable
Al2O3 gel films”
M. S. M. Saifullah,
H. Namatsu, T. Yamaguchi, K. Yamazaki and K. Kurihara
Jpn. J. Appl.
Phys. 38, 7052 (1999).
(18) “Spin-coatable
Al2O3 resist in electron beam nanolithography”
M. S. M. Saifullah,
H. Namatsu, T. Yamaguchi, K. Yamazaki and K. Kurihara
Proc. SPIE 3678, 633 (1999).
(19) “Si complementary single-electron inverter”
Y. Ono, Y. Takahashi, K.
Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Tech. Dig. IEDM
(1999) 367.
(20) “Novel fabrication techniques for
silicon single-electron devices”
Y. Takahashi, Y. Ono, A.
Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu,
K. Kurihara and K. Murase
Proceedings
of Electrochemical Society 99, 302 (1999).
(21) “A Si memory device composed of a
one-dimensional metal-oxide-semiconductor field-effect-transistor switch and a
single-electron-transistor detector”
Y. Takahashi, A. Fujiwara, K.
Yamazaki, H. Namatsu, K. Kurihara
and K. Murase
Jpn. J. Appl.
Phys. 38, 2457 (1999).
(22) “Fabrication method for IC-oriented Si
twin-island single-electron transistors”
Y. Ono, Y. Takahashi, K.
Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
IEEE Trans. Electron
Devices ED-47, 147 (2000).
(23) “Supercritical resist dryer”
H. Namatsu,
K. Yamazaki and K. Kurihara
J. Vac. Sci. Techinol. B 18, 780 (2000).
(24) “Multigate
single-electron transistors and their application to an exclusive-OR gate”
Y. Takahashi, A. Fujiwara, K.
Yamazaki, H. Namatsu, K. Kurihara
and K. Murase
Appl. Phys. Lett. 76, 637 (2000).
(25) “Si complementary single-electron
inverter with voltage gain”
Y. Ono, Y. Takahashi, K.
Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Appl. Phys. Lett. 76, 3121 (2000).
(26) “Single-electron transistor and
current-switching device fabrication by vertical pattern-dependent oxidation”
Y. Ono, Y. Takahashi, K.
Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Jpn. J. Appl.
Phys. 39, 2325 (2000).
(27) “Suppressed aggregate extraction
development (SAGEX) resist”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
J.
Photopolymer Sci. Technol., 13, 427 (2000).
(28) “Si single-electron transistors with
high voltage gain”
Y. Ono, K. Yamazaki and
Y. Takahashi
IEICE Trans.
Electron. E84-C, 1061 (2001).
(29) “Single-electron and quantum SOI devices”
Y. Ono, K. Yamazaki, M.
Nagase, S. Horiguchi, K. Shiraishi
and Y. Takahashi
Microelectron.
(30) “Fabrication and magnetic properties of
ultra high density permalloy dot array”
M. Yamada, K. Ono, K.
Yamazaki, T. Yamaguchi, M. Nagase, K. Kurihara,
H. Takenaka and M. Oshima
Proc. Int.
Symposium on Advanced Physical Fields (NRIM Tsukuba, 2001) 352.
(31) ”Single-electron
devices formed by pattern-dependence oxidation: microscopic structural
evaluation”
M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi
Appl. Surf. Sci.
190, 144 (2002).
(32) “Detection of single charges and their
generation-recombination dynamics in Si nanowires at
room temperature”
A. Fujiwara, K. Yamazaki
and Y. Takahashi
Appl. Phys. Lett. 80, 4567, (2002).
(33) “Fabrication of single-electron
transistors and circuit using SOIs”
Y. Ono, K. Yamazaki, M.
Nagase, S. Horiguchi, K. Shiraishi
and Y. Takahashi
(34) ”Resist
thinning effect on nanometer-scale line-edge roughness”
K. Kanzaki,
T. Yamaguchi, M. Nagase, K. Yamazaki and H. Namatsu
Jpn. J. Appl.
Phys. 41, L1342 (2002).
(35) “Molecular weight effect on line-edge
roughness”
T. Yamaguchi, K. Yamazaki
and H. Namatsu
Proc. SPIE 5039,
1212 (2003).
(36) “Line-edge roughness: characterization
and material origin”
T. Yamaguchi, K. Yamazaki,
M. Nagase and H. Namatsu
Jpn. J. Appl.
Phys. 42, 3755 (2003).
(37) “Turnstile operation using a silicon
dual-gate single-electron transistor”
Y. Ono, Neil M. Zimmerman, K.
Yamazaki, Y. Takahashi
Jpn. J. Appl.
Phys. 42, L1109 (2003).
(38) “Influence of oxidation temperature on
Si-single electron transistor characteristics”
H. Namatsu,
Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, F. Fujiwara
and S. Horiguchi
J. Vac. Sci.
Technol. B 21, 2869 (2003).
(39) ”Electron beam
nanolithography of b-ketoester
modified aluminum tri-sec- butoxide”
M. S. M. Saifullah,
Dae-Joon Kang, K. R. V. Subramanian, M. E. Welland, K. Yamazaki and K. Kurihara
J. Sol-Gel
Sci. Technol. 29, 510 (2004).
(40) “Influence of molecular weight of resist
polymers on surface roughness and line-edge roughness”
T. Yamaguchi, K. Yamazaki,
and H. Namatsu
J. Vac. Sci.
Technol. B 22, 2604 (2004).
(41) “Full adder operation based on Si nanodot array device with multi-inputs and multi-outputs”
T. Kaizawa,
M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H.
Inokawa, Y. Takahashi, and J.-B. Choi
Int'l J. Nanotechnol.
Molecular Computation 1
(2), 58 (2009).
(42) “Single-electron device with a Si nanodot array and multiple input gates”
T. Kaizawa,
M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H.
Inokawa, Y. Takahashi, and J.-B. Choi
IEEE Trans.
Nanotechnology 8, 535 (2009).
(43) “Silicon nanodot-array
device with multiple gates”
M. Jo, T. Kaizawa,
M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H.
Inokawa, Y. Takahashi, and J.-B. Choi
Materials
Science in Semiconductor Processing 11, in printing (2009).
(44) “Fabrication of nanomechanical
structures from bulk-GaAs using angled ion etching”
V. K. Singh, K. Yamazaki,
T. Tawara, H. Okamoto, and H. Yamaguchi
Appl. Phys.
Express 2, 065001 (2009).