(1) “Isolating individual chains of selenium by incorporation into the channels of a zeolite”
O. Terasaki, K. Yamazaki, J. M. Thomas, T. Ohsuna, D. Watanabe, J. V. Sandars and J. C. Barry
Nature 330, 58 (1987).
(2) “The incorporation of selenium into the channels of mordenite: An electron microscopic study”
O. Terasaki, K. Yamazaki, J. M. Thomas, T. Ohsuna, D. Watanabe, J. V. Sanders and J. C. Barry
J. Solid State Chem. 77, 72 (1988).
(3) “Absorption spectra of selenium clusters and chains incorporated into zeolites”
Y. Nozue, T. Kodaira, O. Terasaki, K. Yamazaki, T. Goto, D. Watanabe, J. M. Thomas
J. Phys.: Condens. Matter 2, 5209 (1990).
(4) “Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
Appl. Phys. Lett. 71, 2388 (1997).
(5) “Silicon double-island single-electron device”
A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara and K. Murase
Tech. Dig. IEDM (1997) 163.
(6) “Linewidth fluctuations caused by polymer aggregates in resist films”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, K. Kurihara
J. Photopolym. Sci. Technol, 10, 635 (1997).
(7) “Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations”
H. Namatsu, T. Yamaguchi, M. Nagase, K. Yamazaki and K. Kurihara
Microelectron. Eng. 41/42, 331 (1998).
(8) “Si nanostructures formed by pattern-dependent oxidation”
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase and K. Kurihara
Microelectron. Eng. 41/42, 527 (1998).
(9) “Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations”
H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase and K. Kurihara
J. Vac. Sci. Technol. B 16, 69 (1998).
(10) “Influence of edge roughness in resist patterns on etched patterns”
H. Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki and K. Kurihara
J. Vac. Sci. Technol. B 16, 3315 (1998).
(11) “Si memory device operated with a small number of electrons by using a single-electron- transistor detector”
Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara and K. Murase
IEE Electron. Lett. 34, 45 (1998).
(12) “A multi-gate single-electron transistor and its application to an exclusive-OR gate”
Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara and K. Murase
Tech. Dig. IEDM (1998) 127.
(13) “New development model: aggregate extraction development”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
Proc. SPIE 3333, 830 (1998).
(14) “Fabrication method for IC-oriented Si twin-island single-electron transistors”
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Tech. Dig. IEDM (1998) 123.
(15) “Supercritical drying for nanostructure fabrication without pattern collapse”,
H. Namatsu, K. Yamazaki and K. Kurihara
Microelectron. Eng. 46, 129 (1999).
(16) “A new approach to reducing line-edge roughness by using a cross-linked positive-tone resist”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
Jpn. J. Appl. Phys. 38, 7114 (1999).
(17) “Effect of chelating agents on high resolution electron beam nanolithography of spin-coatable Al2O3 gel films”
M. S. M. Saifullah, H. Namatsu, T. Yamaguchi, K. Yamazaki and K. Kurihara
Jpn. J. Appl. Phys. 38, 7052 (1999).
(18) “Spin-coatable Al2O3 resist in electron beam nanolithography”
M. S. M. Saifullah, H. Namatsu, T. Yamaguchi, K. Yamazaki and K. Kurihara
Proc. SPIE 3678, 633 (1999).
(19) “Si complementary single-electron inverter”
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Tech. Dig. IEDM (1999) 367.
(20) “Novel fabrication techniques for silicon single-electron devices”
Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Proceedings of Electrochemical Society 99, 302 (1999).
(21) “A Si memory device composed of a one-dimensional metal-oxide-semiconductor field-effect-transistor switch and a single-electron-transistor detector”
Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara and K. Murase
Jpn. J. Appl. Phys. 38, 2457 (1999).
(22) “Fabrication method for IC-oriented Si twin-island single-electron transistors”
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
IEEE Trans. Electron Devices ED-47, 147 (2000).
(23) “Supercritical resist dryer”
H. Namatsu, K. Yamazaki and K. Kurihara
J. Vac. Sci. Techinol. B 18, 780 (2000).
(24) “Multigate single-electron transistors and their application to an exclusive-OR gate”
Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara and K. Murase
Appl. Phys. Lett. 76, 637 (2000).
(25) “Si complementary single-electron inverter with voltage gain”
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Appl. Phys. Lett. 76, 3121 (2000).
(26) “Single-electron transistor and current-switching device fabrication by vertical pattern-dependent oxidation”
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase
Jpn. J. Appl. Phys. 39, 2325 (2000).
(27) “Suppressed aggregate extraction development (SAGEX) resist”
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara
J. Photopolymer Sci. Technol., 13, 427 (2000).
(28) “Si single-electron transistors with high voltage gain”
Y. Ono, K. Yamazaki and Y. Takahashi
IEICE Trans. Electron. E84-C, 1061 (2001).
(29) “Single-electron and quantum SOI devices”
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi
Microelectron. Eng. 59, 435 (2001).
(30) “Fabrication and magnetic properties of ultra high density permalloy dot array”
M. Yamada, K. Ono, K. Yamazaki, T. Yamaguchi, M. Nagase, K. Kurihara, H. Takenaka and M. Oshima
Proc. Int. Symposium on Advanced Physical Fields (NRIM Tsukuba, 2001) 352.
(31) ”Single-electron devices formed by pattern-dependence oxidation: microscopic structural evaluation”
M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi
Appl. Surf. Sci. 190, 144 (2002).
(32) “Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature”
A. Fujiwara, K. Yamazaki and Y. Takahashi
Appl. Phys. Lett. 80, 4567, (2002).
(33) “Fabrication of single-electron transistors and circuit using SOIs”
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi
Solid State Electronics 46, 1723, (2002).
(34) ”Resist thinning effect on nanometer-scale line-edge roughness”
K. Kanzaki, T. Yamaguchi, M. Nagase, K. Yamazaki and H. Namatsu
Jpn. J. Appl. Phys. 41, L1342 (2002).
(35) “Molecular weight effect on line-edge roughness”
T. Yamaguchi, K. Yamazaki and H. Namatsu
Proc. SPIE 5039, 1212 (2003).
(36) “Line-edge roughness: characterization and material origin”
T. Yamaguchi, K. Yamazaki, M. Nagase and H. Namatsu
Jpn. J. Appl. Phys. 42, 3755 (2003).
(37) “Turnstile operation using a silicon dual-gate single-electron transistor”
Y. Ono, Neil M. Zimmerman, K. Yamazaki, Y. Takahashi
Jpn. J. Appl. Phys. 42, L1109 (2003).
(38) “Influence of oxidation temperature on Si-single electron transistor characteristics”
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, F. Fujiwara and S. Horiguchi
J. Vac. Sci. Technol. B 21, 2869 (2003).
(39) ”Electron beam nanolithography of b-ketoester modified aluminum tri-sec- butoxide”
M. S. M. Saifullah, Dae-Joon Kang, K. R. V. Subramanian, M. E. Welland, K. Yamazaki and K. Kurihara
J. Sol-Gel Sci. Technol. 29, 510 (2004).
(40) “Influence of molecular weight of resist polymers on surface roughness and line-edge roughness”
T. Yamaguchi, K. Yamazaki, and H. Namatsu
J. Vac. Sci. Technol. B 22, 2604 (2004).
(41) “Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor”
A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. martin, Appl. Phys. Lett. 88, 053121 (2006).
(42) “Full adder operation based on Si nanodot array device with multi-inputs and multi-outputs”
T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi
Int'l J. Nanotechnol. Molecular Computation 1 (2), 58 (2009).
(43) “Single-electron device with a Si nanodot array and multiple input gates”
T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi
IEEE Trans. Nanotechnology 8, 535 (2009).
(44) “Silicon nanodot-array device with multiple gates”
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi
Materials Science in Semiconductor Processing 11, in printing (2009).
(45) “Fabrication of nanomechanical structures from bulk-GaAs using angled ion etching”
V. K. Singh, K. Yamazaki, T. Tawara, H. Okamoto, and H. Yamaguchi
Appl. Phys. Express 2, 065001 (2009).