Kenji Yamazaki


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Research Interests

  • NanoElectroMechanical Systems
  • Three-dimensional Nanofabrication
  • Electron-Beam Nanolithography
  • Scanning Probe Microscopy on Semiconductors
  • Physical Property of Low Dimensional Materials


    Publication list

    Electron Beam Lithography on Vertical Side Faces of Micrometer-oder Si Block
    Kenji Yamazaki and Hiroshi Yamaguchi
    J. Vac. Sci. Technol. B. Vol. 30, Issue 4, 041601-1-6 (2012).

    Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Three-Dimensional Nanostructures in Semiconductors
    Kenji Yamazaki and Hiroshi Yamaguchi
    Appl. Phys. Express Vol. 3, Issue 10, 106501-1-3 (2010).

    Three-Dimensional Alignmnet with 10-nm order accuracy in Electron-Beam Lithography on Rotated Sample for Three-Dimensional Nanofabrication
    Kenji Yamazaki and Hiroshi Yamaguchi
    J. Vac. Sci. Technol. B Vol. 26, Issue 6, 2529-33 (2008).

    Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
    Kenji Yamazaki and Hiroshi Yamaguchi
    Appl. Phys. Express Vol. 1, Issue 9, 097001-1-3 (2008).

    Chapter 10. Electron Beam Direct Writing
    K. Yamazaki
    "Nanofabrication: Fundamentals and Applications" Edited by A. A. Tseng, World Scientific Publication Company (Singapore), 2008.

    Modulation of Young's Modulus of Poly(methyl methacrylate) Nanobeam Due to Electron-Beam Exposure
    Kenji Yamazaki, Toru Yamaguchi, and Hiroshi Yamaguchi
    Jpn. J. Appl. Phys. Vol. 46, Issue 45-49, L1225-7 (2007) (Express Letter).

    Piezoresistance of Suspended InAs/AlGaSb Heterostructure Nanobeam
    Kenji Yamazaki, Samir Etaki, Herre S. J. van der Zant, and Hiroshi Yamaguchi
    J. Cryst. Growth, Vol. 301-302, 897-901 (2007).

    Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
    Kenji Yamazaki and Hideo Namatsu
    Jpn. J. Appl. Phys. Vol. 45, Issue 12-16, L403-5 (2006).

    New Resist-Coating Technique Using Fine Mist for Three-Dimensional Nanotechnology
    Kenji Yamazaki and Hideo Namatsu
    Tech. Dig. 19th IEEE MEMS, 254-7 (2006).

    Three-Dimensional Nanofabrication with 10-nm Resolution
    Kenji Yamazaki, Toru Yamaguchi and Hideo Namatsu
    Jpn. J. Appl. Phys. Vol. 43, Issue 8B, L1111-3 (2004).

    Three-Dimensional Nanofabrication (3D-NANO) down to 10-nm Order using Electron-Beam Lithography
    Kenji Yamazaki and Hideo Namatsu
    Tech. Dig. 17th IEEE MEMS, 609-12 (2004).

    Two-Axis-of-Rotation Drive System in Electron-Beam Lithography Apparatus for Nanotechnology Applications
    Kenji Yamazaki and Hideo Namatsu
    Microelectron. Eng. Vol. 73/74, 85-9 (2004).

    5-nm-Order Electron-Beam Lithography for Nanodevice Fabrication
    Kenji Yamazaki and Hideo Namatsu
    Jpn. J. Appl. Phys. Vol. 43, Issue 6B, 3767-71 (2004).

    Electron-Beam Diameter Measurement using a Knife Edge with a Visor for Scattering Electrons
    Kenji Yamazaki and Hideo Namatsu
    Jpn. J. Appl. Phys. Vol. 42, Issue 5A, L491-3 (2003).

    Edge-Enhancement Writing for Electron Beam Nanolithography
    Kenji Yamazaki, Toru Yamaguchi and Hideo Namatsu
    Jpn. J. Appl Phys. Vol. 42, Issue 6B, 3833-7 (2003).

    Sub-10-nm Electron Beam Lithography with Sub-10-nm Overlay Accuracy
    Kenji Yamazaki, Muhammad S. M. Saifullah, Hideo Namatsu and Kenji Kurihara
    Proc. SPIE Vol. 3997, 458-66 (2000).

    Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
    Kenji Yamazaki, Akira Fujiwara, Yasuo Takahashi, Hideo Namatsu, and Kenji Kurihara
    Jpn J. Appl. Phys. Vol. 37, Issue 12B, pp 6788-91 (1998).

    Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
    Kenji Yamazaki, Kenji Kurihara, Toru Yamaguchi, Hideo Namatsu, and Masao Nagase
    Jpn. J. Appl. Phys. Vol. 36, Issue 12B, pp 7552-6 (1997).

    Semiconductor Fabrication Process Evaluation by Scanning Tunneling Microscopy/Atomic Force Microscopy and Releted Techniques: Mainly Impurity Concentration Observation
    Kenji Yamazaki
    Inst. Phys. Conf. Ser. No 160, pp 437-48 (1997).

    Impurity Concentration Measurement on MOSFET Cross-Section by Scanning Tunneling Spectroscopy-Atomic Force Microscopy
    Kenji Yamazaki
    Trans. Mat. Res. Soc. Japan. Vol. 20, pp 235-8 (1996).

    An Integrated Atomic Force Microscopy/Scanning Tunneling Spectroscopy Microscope and Its Application for p-n Junction Observation
    Kenji Yamazaki and Shigeru Nakajima
    Jpn. J. Appl. Phys. Vol. 33, Issue 6B, pp 3743-7 (1994).


    Publication as a coauthor


    Biography

    He recieved B. S. in 1986, M. S. in 1988, and Ph. D. in 2004 from Tohoku university. He joined NTT LSI laboratories in 1988, and began to study on Scanning Tunneling Microscopy. Since 1996, He has studied electron-beam nanolithography in NTT Basic Research laboratories.


    NTT Basic Research Laboratories
    3-1 Morinosato Wakamiya, Atsugi-shi,
    Kanagawa, 243-0198 JAPAN


    Last modified: Oct. 2011

    HOME PAGE of NTT Basic Res. Labs.