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S. Aihara, H. Kageshima., T. Sakai, and T. Sato.
First-principles study of charging effect on magnetism of Pd (100) ultrathin films
Journal Of Applied Physics 112 (7), 073910 (2012).
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S. Horiguchi, and A. Fujiwara
Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor
Thin Solid Films 520 (8), 33493353 (2012).
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M. Inoue, H. Kageshima, Y. Kangawa, and K. Kakimoto
First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)
Physical Review B 86 (8), 085417 (2012).
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M. Jo, Y. Kato, M. Arita, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi, and JB. Choi
Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
Ieice Transactions On Electronics E95C (5), 865870 (2012).
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H. Kageshima, and A. Fujiwara
First-principles study of nonclassical effects in silicon-based nanocapacitors
Physical Review B 85 (20), 205304 (2012).
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H. Kageshima, H. Hibino, and S. Tanabe
The physics of epitaxial graphene on SiC(0001)
Journal Of Physics-condensed Matter 24 (31), 314215 (2012).
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GP. Lansbergen, Y. Ono, and A. Fujiwara
Donor-Based Single Electron Pumps with Tunable Donor Binding Energy
Nano Letters 12 (2), 763768 (2012).
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K. Nishiguchi, and A. Fujiwara.
Detecting signals buried in noise via nanowire transistors using stochastic resonance
Applied Physics Letters 101 (19), 193108 (2012).
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K. Nishiguchi, and A. Fujiwara
Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect
Applied Physics Express 5 (8), 085002 (2012).
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T. Thorbeck, A. Fujiwara, and NN. Zimmerman
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Ieee Transactions On Nanotechnology 11 (5), 975978 (2012).
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H. Hibino, S. Tanabe, S. Mizuno, and H. Kageshima
Growth and electronic transport properties of epitaxial graphene on SiC
Journal Of Physics D-applied Physics 45 (15), 154008 (2012).
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S. Tanabe, Y. Sekine, H. Kageshima, and H. Hibino
Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)
Japanese Journal Of Applied Physics 51 (2), 02BN02 (2012).
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S. Tanabe, M. Takamura, Y. Harada, H. Kageshima, and H. Hibino
Quantum Hall effect and carrier scattering in quasi-free-standing monolayer graphene
Applied Physics Express 5, 125101 (2012).
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I. Mahboob, K. Nishiguchi, H. Okamoto, and H. Yamaguchi
Phonon-cavity electromechanics
Nature Physics 8 (5), 387392 (2012).
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I. Mahboob, Q. Wilmart, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi
Tuneable electromechanical comb generation
Applied Physics Letters 100 (11), 113109 (2012).