Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty
Coulomb collisions of hot and cold single electrons in series-coupled silicon single-electron pumps
Precision measurement of an electron pump at 2 GHz; the frontier of small DC current metrology
Ballistic Brownian Motion of Nanoconfined DNA
Single-Cell Electrochemical Aptasensor Array
Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics
Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime
Subgigahertz Multilayer-Graphene Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven by Reflectometry
Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor
Cryogenic Operation of Electromechanical Relay for Reversal of Quantized Current Generated by a Single-Electron Pump
Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics
Redox-labelled electrochemical aptasensors with nanosupported cancer cells
Single-Electron Manipulation in an Attofarad-Capacitor
Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy
Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility
Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing
Characteristics of Si Single-Electron Transistor under Illumination
Picosecond coherent electron motion in a silicon single-electron source
Measurement of the curvature and height of the potential barrier for a dynamic quantum dot
Evidence for universality of tunable-barrier electron pumps
Energy relaxation in hot electron quantum optics via acoustic and optical phonon emission
Spin splitting in EuO(111)/Si(111) spin-filter tunnel junctions with atomically sharp interface
Detection of single holes generated by impact ionization in silicon
Field-dependent hopping conduction
Selective layer-free blood serum ionogram based on ion-specific interactions with a nanotransistor
Transport characteristics in Au/pentacene/Au diodes
Estimation of pi-pi Electronic Couplings from Current Measurements
Power generator driven by Maxwell's demon
Hydrogen Silsesquioxane-Based Nanofluidics
High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump
Time-domain charge pumping on silicon-on-insulator MOS devices
A correlated electromechanical system
Hopf and period-doubling bifurcations in an electromechanical resonator
Appl. Phys. Lett. 109 (7), 073101 (2016)
An electromechanical displacement transducer
Appl. Phys. Express 9 (8), 086701 (2016).
A 17 GHz molecular rectifier
Nat. Commun. 7 12850 (2016).
Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice
Appl. Phys. Express 9 (10), 105101 (2016).
Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107
Appl. Phys. Lett. 109 (1), 013101 (2016).
Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping
J. Appl. Phys. 120 (23), 234502 (2016).
Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor
J. Appl. Phys. 118, 214305 (2015).
Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire
AIP Adv. 5, 117144 (2015).
Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection
Appl. Phys. Lett. 107, 073110 (2015).
Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
Appl. Phys. Lett. 107, 053101 (2015).
Deviation from the law of energy equipartition in a small dynamic-random-access memory
Jpn. J. Appl. Phys. 54, 06FG03 (2015).
Valley polarization assisted spin polarization in two dimensions
Nat. Commun. 6, 7230 (2015).
Electrical activation and electron spin resonance measurements of arsenic implanted in silicon
Appl. Phys. Lett. 106, 142105 (2015).
Dispersive and Dissipative Coupling in a Micromechanical Resonator Embedded with a Nanomechanical Resonator
Nano Lett. 15, 2312-2317 (2015).
Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors
Jpn. J. Appl. Phys. 54, 04DN04 (2015).
Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots
J. Appl. Phys. 117 (8), 084316 (2015).
Gigahertz single-hole transfer in Si tunable-barrier pumps
Appl. Phys. Lett. 106 (2), 023112 (2015).
Single-electron thermal noise
Nanotechnology 25 (27), 275201 (2014).
Electric tuning of direct-indirect optical transitions in silicon
Sci Rep 4, 6950 (2014).
Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films
Phys. Rev. B 90 (5), 054411 (2014).
A simple and inexpensive technique for PDMS/silicon chip alignment with sub-mu m precision
Anal. Methods 6 (1), 97-101 (2014).
Gigahertz single-trap electron pumps in silicon
Nat. Commun. 5, 5038 (2014).
Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles
Phys. Rev. B 89 (16), 165302 (2014).
A multimode electromechanical parametric resonator array
Sci Rep 4, 4448 (2014).
Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study
J. Appl. Phys. 113 (18), 184312 (2013).
Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors
Nano Lett. 13 (8), 3903-3908 (2013).
Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface
Phys. Rev. B 88 (23), 235405 (2013).
Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting
Appl. Phys. Lett. 102 (19), 191603 (2013).
Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
Appl. Phys. Lett. 103 (14), 143102 (2013).
Metallic behaviour in SOI quantum wells with strong intervalley scattering
Sci Rep 3, 2011 (2013).
Spin and valley polarization dependence of resistivity in two dimensions
Phys. Rev. B 88 (20), 201301 (2013).
Self organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons
Phys. Rev. B 87 (16), 165408 (2013).
Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt
Nano Res. 6 (5), 335-347 (2013).
Multi-mode parametric coupling in an electromechanical resonator
Appl. Phys. Lett. 103 (15), (2013).
Phonon Lasing in an Electromechanical Resonator
Phys. Rev. Lett. 110 (12), 127202 (2013).
First-principles study of charging effect on magnetism of Pd (100) ultrathin films
Journal Of Applied Physics 112 (7), 073910 (2012).
Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor
Thin Solid Films 520 (8), 33493353 (2012).
First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)
Physical Review B 86 (8), 085417 (2012).
Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
Ieice Transactions On Electronics E95C (5), 865870 (2012).
First-principles study of nonclassical effects in silicon-based nanocapacitors
Physical Review B 85 (20), 205304 (2012).
The physics of epitaxial graphene on SiC(0001)
Journal Of Physics-condensed Matter 24 (31), 314215 (2012).
Donor-Based Single Electron Pumps with Tunable Donor Binding Energy
Nano Letters 12 (2), 763768 (2012).
Detecting signals buried in noise via nanowire transistors using stochastic resonance
Applied Physics Letters 101 (19), 193108 (2012).
Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect
Applied Physics Express 5 (8), 085002 (2012).
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Ieee Transactions On Nanotechnology 11 (5), 975978 (2012).
Growth and electronic transport properties of epitaxial graphene on SiC
Journal Of Physics D-applied Physics 45 (15), 154008 (2012).
Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)
Japanese Journal Of Applied Physics 51 (2), 02BN02 (2012).
Quantum Hall effect and carrier scattering in quasi-free-standing monolayer graphene
Applied Physics Express 5, 125101 (2012).
Phonon-cavity electromechanics
Nature Physics 8 (5), 387392 (2012).
Tuneable electromechanical comb generation
Applied Physics Letters 100 (11), 113109 (2012).