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>>量子ドット/ナノワイヤ
>>2次元系
>>低温ナノプローブ
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低温ナノプローブ
MBEチャンバー付き低温走査トンネル顕微鏡 (STM) を用いて半導体表面, ヘテロ構造中に形成されたナノ構造における電子・正孔状態を研究しています.
また, 半導体表面における単原子操作を行っています．
Figure: InAs表面に並べられたIn吸着原子による''NTT''のSTM像
[Appl. Phys. Express 4, 085002 (2011)].
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主な成果
- 半導体における原子操作
- Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation
Yi Pan, Jianshu Yang, Steven C. Erwin, Kiyoshi Kanisawa, and Stefan Folsch
Phys. Rev. Lett. 115, 076803 (2015).
- Quantum dots with single-atom precision
Stefan Folsch, Jesus Martinez-Blanco, Jianshu Yang, Kiyoshi Kanisawa, and Steven C. Erwin
Nature Nanotech. 9, 505 (2014).
- Assembling Indium Atoms into Nanostructures on a Cleaved InAs(110) Surface
Kyoichi Suzuki, Stefan Folsch, and Kiyoshi Kanisawa
Appl. Phys. Express 4, 085002 (2011).
- Atom-By-Atom Quantum State Control in Adatom Chains on a Semiconductor
S. Folsch, J. Yang, C. Nacci, and K. Kanisawa
Phys. Rev. Lett. 103, 096104 (2009).
- InAs表面ナノ構造におけるゼロ次元電子状態
- Stable reconstruction and adsorbates of InAs(111)A surface
A. Taguchi, and K. Kanisawa
Appl. Surf. Sci. 252, 5263 (2006).
- Imaging of Friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111)A surfaces
K. Kanisawa, M. J. Butcher, H. Yamaguchi, and Y. Hirayama
Phys. Rev. Lett. 86, 3384 (2001).
- Local density of states in zero-dimensional semiconductor structures
K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, and Y. Hirayama
Phys. Rev. Lett. 87, 196804 (2001).
- InAs/GaSb超格子中の電子状態
- Spatial Imaging of Two-Dimensional Electron States in Semiconductor Quantum Wells
K. Suzuki, K. Kanisawa, C. Janer, S. Perraud, K. Takashina, T. Fujisawa, and Y. Hirayama
Phys. Rev. Lett. 98, 136802 (2007).
- Imaging of interference between incident and reflected electron waves at an InAs/GaSb heterointerface by low-temperature scanning tunneling spectroscopy
K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, and Y. Hirayama
Jpn. J. Appl. Phys. 46, 2618 (2007) [30th JJAP PAPER AWARD]
- InGaAs/InAlAs表面量子井戸における電子状態
- Direct Measurement of the Binding Energy and Bohr Radius of a Single Hydrogenic Defect in a Semiconductor Quantum Well
S. Perraud, K. Kanisawa, Zhao-Zhong Wang, and T. Fujisawa
Phys. Rev. Lett. 100, 016801 (2008).
- Imaging the percolation of localized states in a multisubband two-dimensional electronic system subject to a disorder potential
S. Perraud, K. Kanisawa, Zhao-Zhong Wang, and T. Fujisawa
Phys. Rev. B 76, 195333 (2007).
- Unpinning of the Fermi level at (111)A clean surfaces of epitaxially grown n-type In0.53Ga0.47As
S. Perraud, K. Kanisawa, Zhao-Zhong Wang, and Y. Hirayama
Appl. Phys. Lett. 89, 192110 (2006).
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