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KN's mission is a research on nanoscale devices with low power consumption
and high functionality. Such devices enable sustainable development of
information and telecommunication (IT) network society that provides more
confortable and friendly life. The research is supported by combination
of various kinds of fabrication processes for silicon transistors and fine
measurements.
CONTACT:
3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198 JAPAN
E-mail: katsuhiko.nishiguchi@ntt.com
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 Feb. 5, 2025 |
Researches on a DRAM cell detecting a high-frequency signal, published in Physical Review Applied. |
| Dec. 27, 2024 |
Researches on silicon valley splitting published in physica solid state physics (b). |
| Nov. 12-15, 2024 |
Researches on silicon nanodevices presented at International Microprocesses and Nanotechnology Conference (MNC2024). |
| Jul. 28-Aug. 2, 2024 |
Researches on valley splitting, stochastic thermodynamics, and Landauer's limit presented at International Conference on the Physics of Semiconductors (ICPS) 2024. |
| Jul. 7-10, 2024 |
Research on noise-energy conversion presented as an invited talk at 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices. |
| Jul. 1- Aug. 2, 2024 |
Research on Landauer's limit presented at Long-term Workshop on Frontiers in Non-equilibrium Physics 2024. |
| Jun. 15-16, 2024 |
Research on Landauer's limit presented at IEEE SILICON NANOELECTRONICS WORKSHOP 2024. |
| May 23, 2024 |
Work about valley splitting in Si is published in J. Appl. Phys. |
| May 15, 2024 |
Our work about a high chagrge sensitvity sensor is published in IEEE Electron Device Letters. |
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