Nanoelectronics, Nanostructures and Carrier Interactions
The conference was held from January 31 to February 2, 2005,
at the NTT Atsugi R&D Center in collaboration with Solution Oriented
Research for Science and Technology (SORST) sponsored by the Japan Science
and Technology Agency (JST).
Ultra-small “nano-scale” structures and the behavior of carriers in these
structures have been the focus of much attention for many years. Recently,
the field has been advanced significantly through the introduction of additional
degrees of freedom, such as electron and nuclear spins, magnetism, and mechanical
motion. In addition, novel quantum mechanical concepts like quantum computing
and quantum cryptography are attracting a great deal of interest. With the
aim of further advancing these studies, this conference aspired to gather
leading scientists and provide forum for discussing the most recent topics
in nanoelectronics, nanostructures, and carrier interactions. The conference
was organized by Dr. Yoshiro Hirayama and Dr. Hiroshi Yamaguchi of NTT Basic
Research Laboratories which have led these fields.
On January 31st, after the opening and welcoming remarks by Dr. Hideaki Takayanagi,
Director of NTT Basic Research Laboratories, the technical session was opened
with the invited talk “Superconducting Flux Qubits” by Prof. J. E. Mooij from
Delft University of Technology. There were 11 oral presentations on superconducting
q-bits, nanoprobes, and mesoscopic/spin phenomena, and 28 poster presentations.
On February 1st, the 12 oral presentations discussed micro/nanomechanical
systems, quantum information processing, and mesoscopic and spin phenomena.
On the 2nd, there were 9 oral presentations on nuclear spin and related phenomena
and advanced heterostructures, and 28 poster presentations. The final talk
was given by Prof. K. Ploog from Paul Drude Institute on “Unexpected Gems
in the Search for Optimized Spin-Injector Materials”. We believe that we provided
a very nice opportunity for mutual communication within and among the related
research fields.
The participants were totally 149 people [including 67 from NTT]. All participants
well enjoyed the high-quality presentations and discussions on nanoelectronics,
nanostructures, and carrier interactions.
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