Epitaxial graphene
grown on SiC
Low-energy electron microscopy
images of epitaxial graphene
Electron reflectivity map

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Evaluation of Number of Graphene Layers Grown on SiC

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Recently, graphene has attracted much attention as a material for future electronics. Epitaxial graphene grown on SiC substrates by annealing can be easily scaled up and is promising for device integration. Aiming at establishing a reproducible way of growing large and uniform epitaxial graphene, we demonstrated that the number of graphene layers grown on SiC can be determined by low-energy electron microscopy (LEEM) using quantized oscillations of electron reflectivity. In-situ microscopic determination of the number of graphene layers using LEEM would greatly contribute to the growth control of epitaxial graphene. (Page 19)


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