Scanning electron microscopic image of an arched InAs/AlGaSb beam Beam shape measured with an atomic force microscope and calculation results Measurement results: relation- ship between resistance and beam deflection
Scanning electron microscopic image of an arched InAs/AlGaSb beam Beam shape measured with an atomic force microscope and calculation results Measurement results: relation- ship between resistance and beam deflection
Piezoelectric Effect on Piezoresistance of InAs/AlGaSb Heterostructure Nanobeam
Nanoelectromechanical systems comprising compound semiconductors are promising for ultrahigh-sensitivity sensors and other applications. In these systems, piezoresistance (i.e., resistance change due to mechanical strain) is an important parameter. We measured the piezoresistance of InAs/AlGaSb heterostructure nanobeams and found that it strongly depends on whether the beams are arched or straight. This can be explained in calculations of piezoresistance by considering the piezoelectric effect. Our results reveal the importance of the piezoelectric effect in mechanical systems using very thin heterostructures. (Page 26)
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