Schematic structure (left) and scanning-electron-microscope image (right) of InAs nanowire FET   Output characteristics of InAs nanowire FET at room temperature

Encapsulated Gate-All-Around InAs Nanowire Field-Effect Transistors

   We have fabricated field-effect transistors using an InAs nanowire as a channel with high electron mobility at room temperature. Gate-all-around geometry is used to improve electrostatic control. The gate also overlaps the source and drain electrodes, fully encapsulating the nanowire channel. This reduces the series resistance of the channel, leading to large drive current and transconductance that surpass those of conventional non-gate-overlap devices. (Page 36)