|(a) Diagram of cavity creation by installing a nanowire into a trench in
a line defect of photonic crystal.
Emission spectrum shows an resonant peak of the nanowire-induced cavity.
(b) SEM image of a nanowire installed into a trench in a line defect of photonic crystal.
We demonstrate that a nanocavity can be created in a photonic crystal by placing a nanowire in a trench in a line defect of Si photonic crystal (Maximum Q-factor : 9500). We move the nanowire using a nanoprobe. In addition, the position of the nanocavity can be shifted by moving the nanowire in the trench. We obtain a photon lifetime of 91 ps for a nanowire-induced photonic crystal cavity, which can be attributed to the Purcell effect. It is the shortest lifetime ever reported for a III-V semiconductor nanowire. (Page 45)