1998
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| ▼ Ordered by first author |
1. K. Ajito
"Direct structural observation of liquid molecules in single picoliter microdroplets using near-infrared Raman microprobe spectroscopy combined with laser trapping and chemical-tomographic imaging techniques"
Thin Solid Films 331 (1-2) 181-188 (1998).
2. K. Ajito
"Combined near-infrared Raman microprobe and laser trapping system: Application to the analysis of a single organic microdroplet in water"
Appl. Spectrosc. 52 (3) 339-342 (1998).
3. K. Ajito, and M. Morita
"Three-Dimensional Molecular Imaging of p-Cresol in a Micro-Capillary Cell using Near-Infrared Raman Microprobe Chemical Tomography"
Mol. Cryst. Liq. Cryst. Sci. Technol. Sect. A-Mol. Cryst. Liq. Cryst. 314 191-196 (1998).
4. T. Akasaka, T. Nishida, S. Ando, and N. Kobayashi
"Surface flattening of GaN by selective area metalorganic vapor phase epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (7B) L842-L844 (1998).
5. T. Akasaka, Y. Kobayashi, S. Ando, N. Kobayashi, and M. Kumagai
"Selective MOVPE of GaN and AlxGa1-xN with smooth vertical facets"
J. Cryst. Growth 189 72-77 (1998).
6. T. Akazaki, H. Takayanagi, J. Nitta, and T. Enoki
"InAs-inserted-channel InAlAs/InGaAs inverted HEMTs with direct ohmic contacts"
Physica E 2 (1-4) 458-462 (1998).
7. L. Alff, A. Beck, R. Gross, A. Marx, S. Kleefisch, T. Bauch, H. Sato, M. Naito, and G. Koren
"Observation of bound surface states in grain-boundary junctions of high-temperature superconductors"
Phys. Rev. B 58 (17) 11197-11200 (1998).
8. H. Ando, T. Sogawa, and H. Gotoh
"Photon-spin controlled lasing oscillation in surface-emitting lasers"
Appl. Phys. Lett. 73 (5) 566-568 (1998).
9. S. Ando, N. Kobayashi, and H. Ando
"Short-cavity Fabry-Perot lasers using crystal facets"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (2A) L105-L107 (1998).
10. H. Arimoto, T. Saku, Y. Hirayama, and N. Miura
"Angular dependent cyclotron resonance of two-dimensional electron gas in GaAs/AlGaAs quantum wells in high magnetic fields up to 150 T"
11. K. Arimura, and N. Hagita
"Feature space design for statistical image recognition with image screening"
IEICE Trans. Inf. Syst. E81D (1) 88-93 (1998).
12. D. G. Austing, T. Honda, and S. Tarucha
"Manipulation of the lateral potential geometry of a quantum dot located in a multiple gated vertical single electron transistor"
Physica E 2 (1-4) 583-587 (1998).
13. D. G. Austing, T. Honda, K. Muraki, Y. Tokura, and S. Tarucha
"Quantum dot molecules"
14. S. Baker, K. Nayar, and H. Murase
"Parametric feature detection"
Int. J. Comput. Vis. 27 (1) 27-50 (1998).
15. S. M. Barnett, L. S. Phillips, and D. T. Pegg
"Imperfect photodetection as projection onto mixed states"
Opt. Commun. 158 (1-6) 45-49 (1998).
16. S. M. Barnett, N. Imoto, and B. Huttner
"Photonic de Broglie wave interferometers"
J. Mod. Opt. 45 (11) 2217-2232 (1998).
17. S. M. Barnett, and R. Loudon
"Sum rule for environmentally modified spontaneous emission rates"
Quantum Semiclass. Opt. 10 (4) 591-599 (1998).
18. F. Bugge, U. Zeimer, M. Sato, M. Weyers, and G. Trankle
"MOVPE growth of highly strained InGaAs/GaAs quantum wells"
J. Cryst. Growth 183 (4) 511-518 (1998).
19. A. Chavez-Pirson, J. Temmyo, H. Kamada, H. Gotoh, and H. Ando
"Near-field optical spectroscopy and imaging of single InGaAs/AlGaAs quantum dots"
Appl. Phys. Lett. 72 (26) 3494-3496 (1998).
20. J. Chen, S. Machida, and Y. Yamamoto
"Simultaneous measurement of amplitude and phase in surface second-harmonic generation"
Opt. Lett. 23 (9) 676-678 (1998).
21. A. Dana, F. Ho, and Y. Yamamoto
"Mechanical parametric amplification in piezoresistive gallium arsenide microcantilevers"
Appl. Phys. Lett. 72 (10) 1152-1154 (1998).
22. K. Ebata, K. Furukawa, and N. Matsumoto
"Synthesis and characterization of end-grafted polysilane on a substrate surface"
J. Am. Chem. Soc. 120 (29) 7367-7368 (1998).
23. J. L. Edwards, and H. Murase
"Coarse-to-fine adaptive masks for appearance matching of occluded scenes"
Mach. Vis. Appl. 10 (5-6) 232-242 (1998).
24. M. Edwards, D. R. Badcock, and A. T. Smith
"Independent speed-tuned global-motion systems"
Vision Res. 38 (11) 1573-1580 (1998).
25. H. Ezaki, M. Koashi, N. Imoto, and E. Hanamura
"Photon number squeezing enhanced by multi-photon absorption in microcavity"
J. Phys. Soc. Jpn. 67 (8) 2721-2728 (1998).
26. X. D. Fan, T. Takagahara, J. E. Cunningham, and H. L. Wang
"Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells"
Solid State Commun. 108 (11) 857-861 (1998).
27. P. Finnie, and Y. Homma
"Atomic step networks as selective epitaxial templates"
Appl. Phys. Lett. 72 (7) 827-829 (1998).
28. S. R. Friberg, and S. Machida
"Ultrafast optical pulse noise suppression using a nonlinear spectral filter: 23 dB reduction of fiber laser 1/f noise"
Appl. Phys. Lett. 73 (14) 1934-1936 (1998).
29. M. Fujiki, S. Toyoda, C. H. Yuan, and H. Takigawa
"Near-UV, circular dichroism, and fluorescence spectra of a rigid rodlike helical polysilane bearing trietheral moiety in ethanol/water"
Chirality 10 (7) 667-675 (1998).
30. T. Fujisawa, T. H. Oosterkamp, W. G. van der Wiel, B. W. Broer, R. Aguado, S. Tarucha, and L. P. Kouwenhoven
"Spontaneous emission spectrum in double quantum dot devices"
Science 282 (5390) 932-935 (1998).
31. A. Fujiwara, Y. Takahashi, K. Yamazaki, and K. Murase
"Si single-electron devices with integrated Si islands - Towards ultralow-power electronics"
Ntt Rev. 10 (6) 114-118 (1998).
32. A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase
"Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (6A) 3257-3263 (1998).
33. K. Fukasaku, K. Takeda, and K. Shiraishi
"First-principles study on electronic structures of protein nanotubes"
J. Phys. Soc. Jpn. 67 (11) 3751-3760 (1998).
34. T. Fukuda
"Oxygen-induced missing dimer row formation on the Ge(100) surface"
Surf. Sci. 417 (2-3) L1149-L1153 (1998).
35. T. Fukuda, and T. Ogino
"Initial oxidation stage of the Ge(100)2x1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy"
Appl. Surf. Sci. 130 165-169 (1998).
36. T. Fukuda, and T. Ogino
"STM study of the initial oxidation stage of Ge(100)2x1"
Appl. Phys. A-Mater. Sci. Process. 66 S969-S972 (1998).
37. T. Fukuda, K. Furukawa, M. Fujino, T. Ogino, and N. Matsumoto
"STM study of the initial adsorption stage of octa-tert-butyloctasilacubane on Si(100) 2x1 surface"
Surf. Sci. 397 (1-3) 58-62 (1998).
38. F. Gollnik, and M. Naito
"Doping dependence of normal- and superconducting-state transport properties of Nd2-xCexCuO4 +/- y thin films"
Phys. Rev. B 58 (17) 11734-11752 (1998).
39. H. Gomi, and R. Osu
"Task-dependent viscoelasticity of human multijoint arm and its spatial characteristics for interaction with environments"
J. Neurosci. 18 (21) 8965-8978 (1998).
40. H. Gomi, M. Shidara, A. Takemura, Y. Inoue, K. Kawano, and M. Kawato
"Temporal firing patterns of Purkinje cells in the cerebellar ventral paraflocculus during ocular following responses in monkeys I. Simple spikes"
J. Neurophysiol. 80 (2) 818-831 (1998).
41. H. Gotoh, H. Ando, H. Kamada, A. Chavez-Pirson, and J. Temmyo
"Spin relaxation of excitons in zero-dimensional InGaAs quantum disks"
Appl. Phys. Lett. 72 (11) 1341-1343 (1998).
42. K. Hamada, K. Tamaki, T. Sasado, Y. Watai, S. Kani, Y. Wakamatsu, K. Ozato, M. Kinoshita, R. Kohno, S. Takagi, and M. Kimura
"Usefulness of the medaka beta-actin promoter investigated using a mutant GFP reporter gene in transgenic medaka (Oryzias latipes)"
Mol. Mar. Biol. Biotechnol. 7 (3) 173-180 (1998).
43. A. Hamoudi, T. Sogawa, T. Saitoh, and J. Yumoto
"Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers"
Appl. Phys. A-Mater. Sci. Process. 67 (3) 357-359 (1998).
44. I. Hashimoto, T. Mashiko, T. Kimura, and T. Imada
"Human somatosensory evoked magnetic fields to vibratory stimulation of the index finger: is there frequency organization in SI?"
Electromyogr. Mot. Control-Electroencephalogr. Clin. Neurophysiol. 109 (5) 454-461 (1998).
45. N. Hatakenaka
"Josephson pi states"
J. Phys. Soc. Jpn. 67 (11) 3672-3674 (1998).
46. N. Hatakenaka
"Quantum decay from Josephson pi states"
Phys. Rev. Lett. 81 (17) 3753-3756 (1998).
47. N. Hatakenaka, and H. Ezaki
"Squeezing of Josephson phases in d.c. superconducting quantum interference devices"
J. Phys. Chem. Solids 59 (10-12) 2062-2064 (1998).
48. N. Hatakenaka
"Andreev-reflected quasiparticle interference revisited"
J. Phys. Soc. Jpn. 67 (10) 3360-3363 (1998).
49. N. Hatakenaka, M. Shiobara, K. Matsuda, and S. Tanda
"Dimensional crossover of quantum nucleation processes in charge-density-wave phase slips"
Phys. Rev. B 57 (4) R2003-R2005 (1998).
50. J. Herfort, D. G. Austing, and Y. Hirayama
"Electron transport in MIS-like GaAs/AlxGa1-xAs heterostructures with nanostructured gates"
Solid-State Electron. 42 (7-8) 1135-1139 (1998).
51. H. Hibino, K. Sumitomo, T. Fukuda, Y. Homma, and T. Ogino
"Disordering of Si(111) at high temperatures"
Phys. Rev. B 58 (19) 12587-12589 (1998).
52. H. Hibino, Y. Homma, and T. Ogino
"Triangular-tiled arrangement of 7x7 and '1x1' domains on Si(111)"
Phys. Rev. B 58 (12) R7500-R7503 (1998).
53. H. Hibino, and T. Ogino
"Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)root 3x root 3-B"
Surf. Sci. 412-13 132-140 (1998).
54. H. Hibino, K. Sumitomo, and T. Ogino
"Growth process of twinned epitaxial layers on Si(111)root 3x root 3-B and their thermal stability"
Appl. Surf. Sci. 130 41-46 (1998).
55. H. Hibino, K. Sumitomo, and T. Ogino
"Twinned epitaxial layers formed on Si(111)root 3x root 3-B"
J. Vac. Sci. Technol. A-Vac. Surf. Films 16 (3) 1934-1937 (1998).
56. A. Hirata, K. Machida, S. Maeyama, Y. Watanabe, and H. Kyuragi
"Diffusion barrier mechanism of extremely thin tungsten silicon nitride film formed by ECR plasma nitridation"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 37 (3B) 1251-1255 (1998).
57. Y. Hirayama, K. Muraki, and T. Saku
"Two-dimensional electron gas formed in a back-gated undoped heterostructure"
Appl. Phys. Lett. 72 (14) 1745-1747 (1998).
58. Y. Homma, H. Hibino, T. Ogino, and N. Aizawa
"Sublimation of a heavily boron-doped Si(111) surface"
Phys. Rev. B 58 (19) 13146-13150 (1998).
59. Y. Homma
"Secondary electron imaging of nucleation and growth of semiconductors for nanostructure fabrication"
Thin Solid Films 332 (1-2) 262-266 (1998).
60. Y. Homma, F. Tohjou, A. Masamoto, M. Shibata, H. Shichi, Y. Yoshioka, T. Adachi, T. Akai, Y. Gao, M. Hirano, T. Hirano, A. Ihara, T. Kamejima, H. Koyama, M. Maier, S. Matsumoto, H. Matsunaga, T. Nakamura, T. Obata, K. Okuno, S. Sadayama, K. Sasa, K. Sasakawa, Y. Shimanuki, S. Suzuki, D. E. Sykes, I. Tachikawa, H. Takase, T. Tanigaki, M. Tomita, H. Tosho, and S. Kurosawa
"Secondary ion mass spectrometry round-robin study of relative sensitivity factors in gallium arsenide"
Surf. Interface Anal. 26 (2) 144-154 (1998).
61. T. Honda, S. Tarucha, and D. G. Austing
"Gate performance in resonant tunneling single electron transistor"
IEICE Trans. Electron. E81C (1) 2-7 (1998).
62. S. Horiguchi
"Conditions for a direct band gap in Si quantum wires"
Superlattices Microstruct. 23 (2) 355-364 (1998).
63. T. Horiuchi, O. Niwa, and N. Hatakenaka
"Evidence for laser action driven by electrochemiluminscence"
Nature 394 (6694) 659-661 (1998).
64. S. Hoshino, H. Suzuki, M. Fujiki, M. Morita, and N. Matsumoto
"Electroluminescent Properties of Dialkyl Substituted Polysilanes"
65. N. Ishikawa, Y. Chimi, A. Iwase, H. Maeta, K. Tsuru, O. Michikami, T. Kambara, T. Mitamura, Y. Awaya, and M. Terasawa
"Electronic excitation effects in ion-irradiated high-T-c superconductors"
Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms 135 (1-4) 184-189 (1998).
66. T. Ishiyama, E. Katayama, K. Murakami, K. Takahei, and A. Taguchi
"Electron spin resonance of Er-oxygen complexes in GaAs grown by metal organic chemical vapor deposition"
J. Appl. Phys. 84 (12) 6782-6787 (1998).
67. T. Ito, and K. Shiraishi
"Theoretical investigations of adsorption behavior on GaAs(001) surfaces"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 37 (8) 4234-4243 (1998).
68. T. Ito, K. Shiraishi, H. Kageshima, and Y. Y. Suzuki
"A theoretical investigation of the potential for inter-surface migration of Ga adatoms between GaAs(001) and (111)B surfaces"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (5A) L488-L491 (1998).
69. T. Ito, and K. Shiraishi
"Electron counting Monte Carlo simulation of the structural change of the GaAs(001)-c(4x4) surface during Ga predeposition"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (3A) L262-L264 (1998).
70. M. Itoh, Y. Hirayama, and S. Tarucha
"Low-energy focused-ion-beam shape observation and its noise reduction for nanofabrication"
Microelectron. Eng. 40 (1) 21-34 (1998).
71. Y. Iwasaki, T. Horiuchi, M. Morita, and O. Niwa
"Analysis of electrochemical processes using surface plasmon resonance"
Sens. Actuator B-Chem. 50 (2) 145-148 (1998).
72. S. Jiang, S. Machida, Y. Takiguchi, H. Cao, and Y. Yamamoto
"Wide band AC balanced homodyne detection of weak coherent pulses"
Opt. Commun. 145 (1-6) 91-94 (1998).
73. S. D. Jiang, S. Machida, Y. Takiguchi, Y. Yamamoto, and H. Cao
"Direct time-domain observation of transition from strong to weak coupling in a semiconductor microcavity"
Appl. Phys. Lett. 73 (21) 3031-3033 (1998).
74. Y. Jimbo, H. P. Robinson, and A. Kawana
"Strengthening of synchronized activity by tetanic stimulation in cortical cultures: Application of planar electrode arrays"
IEEE Trans. Biomed. Eng. 45 (11) 1297-1304 (1998).
75. M. R. Junnarkar, and N. Uesugi
"Computer simulation of ultra-short optical pulse propagation in solid and hollow wave-guides"
IEICE Trans. Electron. E81C (2) 240-245 (1998).
76. H. Kageshima, and K. Shiraishi
"First-principles study of oxide growth on Si(100) surfaces and at SiO2/Si(100) interfaces"
Phys. Rev. Lett. 81 (26) 5936-5939 (1998).
77. H. Kageshima, and K. Shiraishi
"Theoretical study of the band offset at silicon-oxide/silicon interfaces with interfacial defects"
Surf. Sci. 407 (1-3) 133-139 (1998).
78. H. Kageshima, and K. Shiraishi
"Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces"
Appl. Surf. Sci. 130 176-181 (1998).
79. H. Kamada, H. Ando, J. Temmyo, and T. Tamamura
"Excited-state optical transitions of excitons and biexcitons in a single InxGa1-xAs quantum disk"
Phys. Rev. B 58 (24) 16243-16251 (1998).
80. M. Kasu, N. Kobayashi, H. Tanaka, and O. Mikami
"Nitrogen radical adsorption on InAs (001) surface studied by scanning tunneling microscopy and x-ray photoelectronic spectroscopy"
Appl. Phys. Lett. 73 (25) 3754-3756 (1998).
81. M. Kasu, T. Makimoto, and N. Kobayashi
"Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth"
Appl. Surf. Sci. 130 452-456 (1998).
82. A. Kawaharazuka, K. Shiraishi, and Y. Horikoshi
"Electric field induced recombination centers in GaAs"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (3B) 1622-1625 (1998).
83. T. Kawamura, J. J. Delaunay, H. Takenaka, T. Hayashi, and Y. Watanabe
"High-performance EUV/soft X-ray ellipsometry system using multilayer mirrors"
J. Synchrot. Radiat. 5 735-737 (1998).
84. T. Kiyokura, F. Maeda, and Y. Watanabe
"Optical design for a bending-magnet beamline based on a varied-line-spacing plane grating"
J. Synchrot. Radiat. 5 572-574 (1998).
85. T. Kiyokura, F. Maeda, Y. Watanabe, E. Shigemasa, A. Yagishita, M. Oshima, Y. Iketaki, and Y. Horikawa
"Submicrometre-area high-energy-resolution photoelectron spectroscopy system"
J. Synchrot. Radiat. 5 1111-1113 (1998).
86. T. Kiyokura, F. Maeda, Y. Watanabe, Y. Kadota, Y. Iketaki, Y. Horikawa, M. Oshima, E. Shigemasa, and A. Yagishita
"Photoelectron microspectroscopy observations of a cleaved surface of semiconductor double heterostructure"
J. Vac. Sci. Technol. A-Vac. Surf. Films 16 (3) 1086-1090 (1998).
87. S. Kleefisch, L. Alff, U. Schoop, A. Marx, R. Gross, M. Naito, and H. Sato
"Superconducting Nd1.85Ce0.15CuO4-y bicrystal grain boundary Josephson junctions"
Appl. Phys. Lett. 72 (22) 2888-2890 (1998).
88. M. Koashi, and N. Imoto
"Maximum amount of information obtainable from a single quantum query of a database"
Phys. Rev. Lett. 81 (23) 5233-5236 (1998).
89. M. Koashi, and N. Imoto
"No-cloning theorem of entangled states"
Phys. Rev. Lett. 81 (19) 4264-4267 (1998).
90. M. Koashi, and M. Ueda
"Matter-field theory of the Casimir force"
Phys. Rev. A 58 (4) 2699-2707 (1998).
91. N. Kobayashi
"Surface photoabsorption monitoring of III-V and GaN MOVPE surfaces"
J. Cryst. Growth 195 (1-4) 228-233 (1998).
92. Y. Kobayashi, T. Akasaka, and N. Kobayashi
"In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet light"
J. Cryst. Growth 195 (1-4) 187-191 (1998).
93. Y. Kobayashi, T. Akasaka, and N. Kobayashi
"Thermal stability of low-temperature GaN and AlN buffer layers during metalorganic vapor phase epitaxy monitored by in situ shallow angle reflectance using ultraviolet light"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (10B) L1208-L1210 (1998).
94. Y. Kobayashi, K. Kawano, A. Takemura, Y. Inoue, T. Kitama, H. Gomi, and M. Kawato
"Temporal firing patterns of Purkinje cells in the cerebellar ventral paraflocculus during ocular following responses in monkeys II. Complex spikes"
J. Neurophysiol. 80 (2) 832-848 (1998).
95. Y. Kobayashi, H. Isaka, and T. Ogino
"Composition of dimers on Ge/Si(001)2x1 surfaces analyzed by infrared (IR) reflection spectroscopy of surface hydrogen vibration"
Appl. Surf. Sci. 130 314-320 (1998).
96. Y. Kobayashi, and N. Kobayashi
"Influence of N-2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption"
J. Cryst. Growth 189 301-304 (1998).
97. L. P. Kouwenhoven, T. H. Oosterkamp, S. Tarucha, D. G. Austing, and T. Honda
"Coulomb oscillations in few-electron quantum dot"
98. M. Kumagai, S. L. Chuang, and H. Ando
"Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors"
Phys. Rev. B 57 (24) 15303-15314 (1998).
99. E. Kuramochi, J. Temmyo, H. Kamada, and T. Tamamura
"Perfect spatial ordering of self-organized InGaAs/AlGaAs quantum disks on GaAs (311)B substrate with silicon-nitride dot array"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (3B) 1559-1564 (1998).
100. R. C. Liu, Y. Yamamoto, and S. Tarucha
"Signs of quantum statistical effects in electron collision"
101. R. C. Liu, B. Odom, Y. Yamamoto, and S. Tarucha
"Quantum interference in electron collision"
Nature 391 (6664) 263-265 (1998).
102. E. Maeda, Y. Kuroda, H. P. Robinson, and A. Kawana
"Modification of parallel activity elicited by propagating bursts in developing networks of rat cortical neurones"
Eur. J. Neurosci. 10 (2) 488-496 (1998).
103. F. Maeda, and Y. Watanabe
"Time-resolved core-level photoelectron spectroscopy on Sb-terminated GaAs(001) under Sb supply control at growth temperature"
J. Electron Spectrosc. Relat. Phenom. 88 779-785 (1998).
104. N. Maeda, T. Nishida, N. Kobayashi, and M. Tomizawa
"Two-dimensional electron-gas density in AlxGa1-xN/GaN heterostructure field-effect transistors"
Appl. Phys. Lett. 73 (13) 1856-1858 (1998).
105. N. Maeda, K. Nozawa, Y. Hirayama, and N. Kobayashi
"Effect of thermal annealing on electrical properties in MBE-grown n-type GaN films"
J. Cryst. Growth 189 359-363 (1998).
106. S. Maeyama, and M. Sugiyama
"Recent performance of the Photon Factory grating/crystal monochromator station BL-1A in the soft X-ray region"
J. Synchrot. Radiat. 5 786-787 (1998).
107. Y. Manabe, and S. Aoyagi
"A feasibility decision algorithm for rate monotonic and deadline monotonic scheduling"
Real-Time Syst. 14 (2) 171-181 (1998).
108. Y. Manabe, R. Baldoni, M. Raynal, and S. Aoyagi
"k-Arbiter: A safe and general scheme for h out of k mutual exclusion"
Theor. Comput. Sci. 193 (1-2) 97-112 (1998).
109. N. Matsumoto
"Overview of silicon-based materials"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (10) 5425-5436 (1998).
110. T. Matsuo, A. Sekiguchi, M. Ichinohe, K. Ebata, and H. Sakurai
"The first isolation and full characterization of fulvene dianion. Synthesis and x-ray structure of dilithium hexasilylfulvene dianion"
Organometallics 17 (15) 3143-3145 (1998).
111. T. Matsuo, A. Sekiguchi, M. Ichinohe, K. Ebata, and H. Sakurai
"Synthesis and reduction of octasilyl[4]radialene. Structure and dynamic study of [4]radialene dianion with eight-center ten-electron pi-system"
Bull. Chem. Soc. Jpn. 71 (7) 1705-1711 (1998).
112. T. Matsuoka
"Unstable mixing region in wurtzite In1-X-YGaXAlYN"
J. Cryst. Growth 189 19-23 (1998).
113. M. Mitsunaga, M. Yamashita, M. Koashi, and N. Imoto
"Temperature diagnostics for cold sodium atoms by transient four-wave mixing"
Opt. Lett. 23 (11) 840-842 (1998).
114. K. Muraki, and Y. Hirayama
"Re-entrant behavior of the v=4/3 fractional quantum Hall effect in a front-and-back-gated 2D hole gas"
115. K. Muraki, and Y. Hirayama
"Effect of valence band structure on the fractional quantum Hall effect of two-dimensional hole systems"
116. M. Murayama, K. Shiraishi, and T. Nakayama
"Reflectance difference spectra calculations of GaAs(001) As- and Ga-rich reconstruction surface structures"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (7) 4109-4114 (1998).
117. T. Nagaoka, Y. Matsuda, H. Obara, A. Sawa, T. Terashima, I. Chong, M. Takano, and M. Suzuki
"Hall anomaly in the superconducting state of high-T-c cuprates: Universality in doping dependence"
Phys. Rev. Lett. 80 (16) 3594-3597 (1998).
118. M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase, and K. Kurihara
"Si nanostructures formed by pattern-dependent oxidation"
Microelectron. Eng. 42 527-530 (1998).
119. M. Naito, H. Yamamoto, and H. Sato
"Reflection high-energy electron diffraction and atomic force microscopy studies on homoepitaxial growth of SrTiO3(001)"
Physica C 305 (3-4) 233-250 (1998).
120. Y. Nakajima, S. Horiguchi, M. Shoji, and Y. Omura
"Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors"
J. Appl. Phys. 83 (9) 4788-4796 (1998).
121. M. Nakamura, M. Shuzo, K. Ono, H. Fujioka, M. Tanaka, T. Nishinaga, Y. Watanabe, and M. Oshima
"The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surface"
Appl. Surf. Sci. 130 128-132 (1998).
122. T. Nakanishi, N. Mori, C. Murayama, H. Takahashi, T. Nagata, M. Uehara, J. Akimitsu, K. Kinoshita, N. Motoyama, H. Eisaki, and S. Uchida
"High-pressure transport properties of the superconducting spin-ladder system Sr14-xCaxCu24O41+delta"
J. Phys. Soc. Jpn. 67 (7) 2408-2414 (1998).
123. H. Nakano, T. Nishikawa, and N. Uesugi
"Strongly enhanced soft x-ray emission at 8 nm from plasma on a neodymium-doped glass surface heated by femtosecond laser pulses"
Appl. Phys. Lett. 72 (18) 2208-2210 (1998).
124. H. Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki, and K. Kurihara
"Influence of edge roughness in resist patterns on etched patterns"
J. Vac. Sci. Technol. B 16 (6) 3315-3321 (1998).
125. H. Namatsu, T. Yamaguchi, M. Nagase, K. Yamazaki, and K. Kurihara
"Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations"
Microelectron. Eng. 42 331-334 (1998).
126. H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase, and K. Kurihara
"Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations"
J. Vac. Sci. Technol. B 16 (1) 69-76 (1998).
127. F. Neumann, H. Teramae, J. W. Downing, and J. Michl
"Gauche, ortho, and anti conformations of saturated A(4)X(10) chains: When will all six conformers exist?"
J. Am. Chem. Soc. 120 (3) 573-582 (1998).
128. S. Nishida, and M. Shinya
"Use of image-based information in judgments of surface-reflectance properties"
J. Opt. Soc. Am. A-Opt. Image Sci. Vis. 15 (12) 2951-2965 (1998).
129. T. Nishida, N. Maeda, T. Akasaka, and N. Kobayashi
"Step-flow MOVPE of GaN on SiC substrates"
J. Cryst. Growth 195 (1-4) 41-47 (1998).
130. T. Nishida, T. Akasaka, Y. Yamauchi, and N. Kobayashi
"Step-free surface and interface by finite area metalorganic vapor phase epitaxy"
J. Cryst. Growth 195 (1-4) 459-465 (1998).
131. T. Nishida, and N. Kobayashi
"Interface flattening and optical characteristics of GaAs/Al0.3Ga0.7As quantum wells grown on finite patterns on a GaAs(111)B substrate"
Appl. Phys. Lett. 72 (22) 2847-2849 (1998).
132. T. Nishida, T. Akasaka, and N. Kobayashi
"Step-flow metalorganic vapor phase epitaxy of GaN on SiC substrates"
Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 37 (4B) L459-L461 (1998).
133. T. Nishida, and N. Kobayashi
"Formation of a 100-mu m-wide stepfree GaAs (111)B surface obtained by finite area metalorganic vapor phase epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (1AB) L13-L14 (1998).
134. T. Nishikawa, H. Nakano, N. Uesugi, and T. Serikawa
"Porous layer effects on soft x-ray radiation emitted from a plasma generated by 130-fs laser pulses irradiating a porous silicon target"
Appl. Phys. B-Lasers Opt. 66 (5) 567-570 (1998).
135. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki
"Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure"
Physica E 2 (1-4) 527-531 (1998).
136. T. Nittono, Y. K. Fukai, F. Hyuga, and N. Maeda
"Electrical characterization of InGaP/GaAs heterointerfaccs grown by metalorganic chemical vapor deposition"
Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 37 (11A) L1288-L1289 (1998).
137. O. Niwa, T. Horiuchi, R. Kurita, H. Tabei, and K. Torimitsu
"Microfabricated on-line sensor for continuous monitoring of L-glutamate"
Anal. Sci. 14 (5) 947-953 (1998).
138. O. Niwa, T. Horiuchi, R. Kurita, and K. Torimitsu
"On-line electrochemical sensor for selective continuous measurement of acetylcholine in cultured brain tissue"
Anal. Chem. 70 (6) 1126-1132 (1998).
139. O. Niwa, R. Kurita, T. Horiuchi, and K. Torimitsu
"Small-volume on-line sensor for continuous measurement of gamma-aminobutyric acid"
Anal. Chem. 70 (1) 89-93 (1998).
140. S. Nojima
"Polarization anisotropy of optical gain in two-dimensional photonic crystals with active lattice points"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (12A) 6418-6424 (1998).
141. S. Nojima
"Enhancement of optical gain in two-dimensional photonic crystals with active lattice points"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (5B) L565-L567 (1998).
142. S. Nojima
"Excitonic polaritons in one-dimensional photonic crystals"
Phys. Rev. B 57 (4) R2057-R2060 (1998).
143. K. Nozawa, N. Maeda, Y. Hirayama, and N. Kobapashi
"Growth of AlxGa1-xN (0 <= x <= 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE"
J. Cryst. Growth 189 114-118 (1998).
144. T. Ohno, A. Ohki, and T. Matsuoka
"Surface cleaning with hydrogen plasma for low-defect-density ZnSe homoepitaxial growth"
J. Vac. Sci. Technol. A 16 (4) 2539-2545 (1998).
145. T. Ohno, A. Ohki, and T. Matsuoka
"Room-temperature CW operation of II-VI lasers grown on ZnSe substrates cleaned with hydrogen plasma"
J. Cryst. Growth 184 550-553 (1998).
146. H. G. Okuno, S. Minato, and H. Isozaki
"On the properties of combination set operations"
Inf. Process. Lett. 66 (4) 195-199 (1998).
147. H. Omi, and T. Ogino
"Self-organization of nanoscale Ge islands in Si/Ge/Si(113) multilayers"
Appl. Surf. Sci. 130 781-785 (1998).
148. T. H. Oosterkamp, T. Fujisawa, W. G. van der Wiel, K. Ishibashi, R. V. Hijman, S. Tarucha, and L. P. Kouwenhoven
"Microwave spectroscopy of a quantum-dot molecule"
Nature 395 (6705) 873-876 (1998).
149. P. G. Osborne, O. Niwa, and K. Yamamoto
"Plastic film carbon electrodes: Enzymatic modification for on line, continuous, and simultaneous measurement of lactate and glucose using microdialysis sampling"
Anal. Chem. 70 (9) 1701-1706 (1998).
150. T. Ouisse, D. K. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase, and S. Cristoloveanu
"Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFET's"
151. P. Parodi, Y. Jimbo, A. Kawana, D. Macri, and V. Torre
"Segmentation of the response of a neuronal network into clusters with similar activity"
Biosystems 48 (1-3) 171-178 (1998).
152. D. T. Pegg, L. S. Phillips, and S. M. Barnett
"Optical state truncation by projection synthesis"
Phys. Rev. Lett. 81 (8) 1604-1606 (1998).
153. L. S. Phillips, S. M. Barnett, and D. T. Pegg
"Optical measurements as projection synthesis"
Phys. Rev. A 58 (4) 3259-3267 (1998).
154. K. Prabhakaran, T. Matsumoto, T. Ogino, and Y. Masumoto
"Fabrication of multiperiod Sr/SiO2/Ge layered structure through chemical bond manipulation"
Appl. Phys. Lett. 72 (24) 3169-3171 (1998).
155. K. Prabhakaran, Y. Kobayashi, and T. Ogino
"Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface"
Appl. Surf. Sci. 130 182-186 (1998).
156. H. Saito, T. Makimoto, and N. Kobayashi
"MOVPE growth of strained InGaAsN/GaAs quantum wells"
J. Cryst. Growth 195 (1-4) 416-420 (1998).
157. A. Sakamoto, H. Kudo, T. Ishihara, S. Seki, and K. Sumitomo
"Ion-induced electron emission from crystal targets with noncrystalline overlayers"
Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms 140 (1-2) 47-54 (1998).
158. T. Saku, K. Muraki, and Y. Hirayama
"High-mobility two-dimensional electron gas in an undoped heterostructure: Mobility enhancement after illumination"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (7A) L765-L767 (1998).
159. S. Sasaki, D. G. Austing, and S. Tarucha
"Spin states in circular and elliptical quantum dots"
160. S. Sasaki, A. Matsuda, and C. W. Chu
"K-39-NMR observation of temperature-dependent spin susceptibility in K3C60"
Physica C 302 (4) 319-324 (1998).
161. S. Sasaki, K. Tsubaki, S. Tarucha, A. Fujiwara, and Y. Takahashi
"Observation of shot noise suppression at the peaks of Coulomb oscillations"
Solid-State Electron. 42 (7-8) 1429-1431 (1998).
162. M. Sawaki, and N. Hagita
"Text-line extraction and character recognition of document headlines with graphical designs using complementary similarity measure"
IEEE Trans. Pattern Anal. Mach. Intell. 20 (10) 1103-1109 (1998).
163. H. Shibata, and T. Yamada
"Double Josephson plasma resonance in T* phase SmLa1-xSrxCuO4-delta"
Phys. Rev. Lett. 81 (16) 3519-3522 (1998).
164. K. Shiraishi, and T. Ito
"Theoretical investigation of the adsorption behavior of Si adatoms on GaAs(001)-(2x4) surfaces"
Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 37 (10B) L1211-L1213 (1998).
165. K. Shiraishi, Y. Y. Suzuki, H. Kageshima, and T. Ito
"Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces"
Appl. Surf. Sci. 130 431-435 (1998).
166. K. Shiraishi, and T. Ito
"Ga-adatom-induced As rearrangement during GaAs epitaxial growth: Self-surfactant effect"
Phys. Rev. B 57 (11) 6301-6304 (1998).
167. T. Sogawa, H. Ando, S. Ando, and H. Kanbe
"Spin-polarization spectroscopy in rectangular GaAs quantum wires"
Phys. Rev. B 58 (23) 15652-15659 (1998).
168. O. M. Stoll, S. Kaiser, R. P. Huebener, and M. Naito
"Intrinsic flux-flow resistance steps in the cuprate superconductor Nd2-xCexCuOy"
Phys. Rev. Lett. 81 (14) 2994-2997 (1998).
169. M. Sugiyama, S. Maeyama, Y. Watanabe, S. Tsukamoto, and N. Koguchi
"Ga-S-Ga bridge-bond formation on in-situ S-treated GaAs(001) surface observed by synchrotron radiation photoemission spectroscopy, X-ray absorption near edge structure, and X-ray standing waves"
Appl. Surf. Sci. 130 436-440 (1998).
170. M. Sugiyama, and S. Maeyama
"An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces"
J. Synchrot. Radiat. 5 1029-1031 (1998).
171. M. Sugiyama, and S. Maeyama
"Chemical-state-resolved x-ray standing-wave analysis of Te-adsorbed GaAs(001)-(2x1) surface"
Phys. Rev. B 57 (12) 7079-7084 (1998).
172. K. Sumitomo, T. Nishioka, and T. Ogino
"Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering"
Appl. Surf. Sci. 130 133-138 (1998).
173. D. Suzuki, H. Yamaguchi, and Y. Horikoshi
"Scanning tunneling microscopy study of GaAs (001) surfaces grown by migration-enhanced epitaxy at low temperatures"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 37 (3A) 758-761 (1998).
174. H. Suzuki, S. Hoshino, C. H. Yuan, M. Fujiki, S. Toyoda, and N. Matsumoto
"Near-ultraviolet electroluminescence from polysilanes"
Thin Solid Films 331 (1-2) 64-70 (1998).
175. H. Suzuki, S. Hoshino, C. H. Yuan, M. Fujiki, S. Toyoda, and N. Matsumoto
"Near-ultraviolet light-emitting diodes based on sigma-conjugated linear silicon-backbone polymers"
IEEE J. Sel. Top. Quantum Electron. 4 (1) 129-136 (1998).
176. H. Suzuki, and S. Hoshino
"Electron Injection Process in Light-Emitting Diodes Made from Polysilanes as Manifested by Incorporation of Electron Injection Layers"
177. K. Suzuki, K. Saito, K. Muraki, and Y. Hirayama
"Photoluminescence from a modulation-doped Al0.33Ga0.67As/GaAs heterointerface under cyclotron resonance"
Phys. Rev. B 58 (23) 15385-15388 (1998).
178. M. Suzuki, T. Watanabe, and A. Matsuda
"Josephson current and dissipation of the c-axis transport in magnetic fields in Bi2Sr2CaCu2O8+delta"
Phys. Rev. Lett. 81 (19) 4248-4251 (1998).
179. M. Suzuki, and S. Karimoto
"Properties of intrinsic Josephson junctions in Bi2Sr2CaCu2O8+delta single crystals"
IEICE Trans. Electron. E81C (10) 1518-1525 (1998).
180. M. Suzuki, K. Mogi, and Y. Homma
"Two-dimensional imaging of surface morphology by energy-analyzed secondary electrons and Auger electron spectroscopy for stepped Si(111) surfaces"
J. Vac. Sci. Technol. A-Vac. Surf. Films 16 (3) 1122-1126 (1998).
181. M. Suzuki, S. Karimoto, and K. Namekawa
"Interlayer tunneling spectroscopy and evidence for the evolution of a pseudogap in Bi2Sr2CaCu2O8"
J. Phys. Soc. Jpn. 67 (3) 732-735 (1998).
182. S. Suzuki
"Constructive function-approximation by three-layer artificial neural networks"
Neural Netw. 11 (6) 1049-1058 (1998).
183. Y. Y. Suzuki, S. Saito, and S. Kurihara
"Quantum phase transition in the infinite dimensional Hubbard model"
J. Low Temp. Phys. 113 (5-6) 897-902 (1998).
184. A. Taguchi, K. Takahei, M. Matsuoka, and S. Tohno
"Evaluation of the energy-transfer rate between an Er 4f shell and a Si host in Er-doped Si"
J. Appl. Phys. 84 (8) 4471-4478 (1998).
185. A. Taguchi, and H. Kageshima
"First-principles investigation of the oxygen negative-U center in GaAs"
Phys. Rev. B 57 (12) R6779-R6782 (1998).
186. A. Taguchi, and K. Takahei
"Erbium in Si: Estimation of energy transfer rate and trap depth from temperature dependence of intra-4f-shell luminescence"
J. Appl. Phys. 83 (5) 2800-2805 (1998).
187. Y. Takagaki, K. J. Friedland, K. H. Ploog, and K. Muraki
"Metastability of the quantum Hall states in asymmetric two-layer systems"
J. Phys.-Condes. Matter 10 (37) 8305-8311 (1998).
188. Y. Takagaki, K. J. Friedland, D. K. Maude, R. Hey, S. Tarucha, K. H. Ploog, and J. C. Portal
"Negative bend resistance in narrow cross junctions near v=1"
Solid State Commun. 106 (9) 627-630 (1998).
189. Y. Takagaki, K. Muraki, and S. Tarucha
"Quantum Hall effect in asymmetric double quantum well systems"
Semicond. Sci. Technol. 13 (3) 296-301 (1998).
190. Y. Takagaki
"Transport properties of semiconductor-superconductor junctions in quantizing magnetic fields"
Phys. Rev. B 57 (7) 4009-4016 (1998).
191. Y. Takahashi, A. Fujiwara, and S. Murase
"Quantized conductance in a small one-dimensional Si wire on a thin silicon-on-insulator substrate fabricated using SiN-film-masked oxidation"
Semicond. Sci. Technol. 13 (9) 1047-1051 (1998).
192. Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase
"Si memory device operated with a small number of electrons by using a single-electron-transistor detector"
Electron. Lett. 34 (1) 45-46 (1998).
193. H. Takayanagi, and T. Akazaki
"Semiconductor-coupled superconducting junctions using NbN electrodes with high H-c2 and T-c"
194. K. Takeda, and K. Shiraishi
"Theoretical studies of the molecular and electronic structures of polyarsine"
Phys. Rev. B 57 (12) 6989-6997 (1998).
195. H. Takenaka, H. Ito, T. Haga, and T. Kawamura
"Design and fabrication of highly heat-resistant Mo/Si multilayer soft X-ray mirrors with interleaved barrier layers"
J. Synchrot. Radiat. 5 708-710 (1998).
196. H. Takesue, F. Yamamoto, K. Shimizu, and T. Horiguchi
"1THz lightwave synthesised frequency sweeper with synchronously tuned bandpass filter"
Electron. Lett. 34 (15) 1507-1508 (1998).
197. T. Takeuchi
"Effect of contrast on the perception of moving multiple Gabor patterns"
Vision Res. 38 (20) 3069-3082 (1998).
198. H. Tamura
"Numerical study of spin effects in single and double quantum dots"
199. S. Tanda, K. Kagawa, T. Maeno, T. Nakayama, K. Yamaya, A. Ohi, and N. Hatakenaka
"Possibility of macroscopic resonant tunneling near the superconductor-insulator transition in YBa2Cu3O7-gamma thin films"
Europhys. Lett. 41 (4) 425-429 (1998).
200. S. Tarucha, T. Honda, D. G. Austing, Y. Tokura, K. Muraki, T. H. Oosterkamp, J. W. Janssen, and L. P. Kouwenhoven
"Electronic states in quantum dot atoms and molecules"
Physica E 3 (1-3) 112-120 (1998).
201. S. Tarucha
"Transport in quantum dots: Observation of atomlike properties"
MRS Bull. 23 (2) 49-53 (1998).
202. T. Tateno
"Characterization of stochastic bifurcations in a simple biological oscillator"
J. Stat. Phys. 92 (3-4) 675-705 (1998).
203. J. Temmyo, E. Kuramochi, H. Kamada, and T. Tamamura
"Resonant self-organization in semiconductor growth"
J. Cryst. Growth 195 (1-4) 516-523 (1998).
204. Y. Tokura
"Quantum Hall ferromagnet in a parabolic quantum wire"
Phys. Rev. B 58 (19) 12597-12600 (1998).
205. Y. Tokura
"Two-dimensional electron transport with anisotropic scattering potentials"
Phys. Rev. B 58 (11) 7151-7161 (1998).
206. Y. Tokura, L. P. Kouwenhoven, D. G. Austing, and S. Tarucha
"Many-body effect in an artificial atom"
207. K. Torimitsu, and O. Niwa
"Direct detection of uncaged glutamate and the laser photostimulation of cultured rat cortex"
Neuroreport 9 (4) 599-603 (1998).
208. E. Toyoda, and H. Takayanagi
"Magnetoresistance oscillations of quasi-ballistic two-dimensional electron gas coupled with a superconducting ring"
209. S. Toyoda, and M. Fujiki
"Photoluminescence and absorption spectra of poly(pentylphenylsilylene). Absence of broad photoluminescence of poly(alkylarylsilylene) around 2.7 eV"
Chem. Phys. Lett. 293 (1-2) 38-42 (1998).
210. K. Tsubaki
"Longitudinal magnetoresistance in magnetic barrier systems"
211. M. Uematsu
"Transient enhanced diffusion of boron in the presence of dislocations produced by amorphizing implantation in silicon"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 37 (11) 5866-5869 (1998).
212. Y. Utsumi, and J. Takahashi
"Synthesis of amino acids from N-2, H2O vapor and CO2 gas mixture by synchrotron radiation induced photochemical reactions at atmospheric pressure"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (10B) L1268-L1270 (1998).
213. K. Uwai, Y. Watanabe, and N. Kobayashi
"Dielectric changes of GaAs surfaces determined using the Kramers-Kronig analysis of surface photoabsorption spectra"
Thin Solid Films 313 583-586 (1998).
214. W. G. van der Wiel, T. H. Oosterkamp, J. W. Janssen, L. P. Kouwenhoven, D. G. Austing, T. Honda, and S. Tarucha
"Singlet-triplet transitions in a few-electron quantum dot"
215. V. V. Vinod, and H. Murase
"Image retrieval using efficient local-area matching"
Mach. Vis. Appl. 11 (1) 7-15 (1998).
216. J. Wang, D. B. Luo, and T. Horiuchi
"Anodic stripping with collection at interdigitated carbon film microelectrode arrays"
Electroanalysis 10 (2) 107-110 (1998).
217. Y. Watanabe
"Effects of annealing on oxygen depth profiles and chemical etching rates of thermally grown silicon oxides"
J. Electrochem. Soc. 145 (4) 1306-1309 (1998).
218. M. J. Werner
"Quantum soliton generation using an interferometer"
Phys. Rev. Lett. 81 (19) 4132-4135 (1998).
219. E. Yamaguchi, and M. R. Junnarkar
"Effects of nitrogen vacancy on optical properties of nitride semiconductors"
J. Cryst. Growth 189 570-574 (1998).
220. F. Yamaguchi, D. H. Huang, and Y. Yamamoto
"Coulomb blockade oscillation in a single atomic junction"
Semicond. Sci. Technol. 13 (8A) A124-A126 (1998).
221. H. Yamaguchi, and Y. Homma
"Imaging of layer by layer growth processes during molecular beam epitaxy of GaAs on (111)A substrates by scanning electron microscopy"
Appl. Phys. Lett. 73 (21) 3079-3081 (1998).
222. H. Yamaguchi, J. L. Sudijono, B. A. Joyce, T. S. Jones, C. Gatzke, and R. A. Stradling
"Thickness-dependent electron accumulation in InAs thin films on GaAs(111)A: A scanning-tunneling-spectroscopy study"
Phys. Rev. B 58 (8) R4219-R4222 (1998).
223. H. Yamaguchi, and Y. Hirayama
"Imaging of local charge density in an InAs/GaAs two-dimensional heterostructure by scanning tunneling microscopy"
Jpn. J. Appl. Phys. Part 2 - Lett. 37 (8A) L899-L901 (1998).
224. H. Yamaguchi, and Y. Hirayama
"Improvement in the electrical properties of GaAs/InAs/GaAs structures through the use of (111)A substrates"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 37 (3B) 1599-1602 (1998).
225. M. Yamaguchi, K. Koyama, T. Suemoto, and M. Mitsunaga
"Mapping of site distribution in Eu3+: YAlO3 on RF-optical frequency axes by using double-resonance spectroscopy"
J. Lumines. 76-7 681-684 (1998).
226. Y. Yamamoto
"Generation of squeezed light from semiconductor lasers and its application to precision measurements"
Phys. Scr. T76 103-109 (1998).
227. K. Yamazaki, A. Fujiwara, Y. Takahashi, H. Namatsu, and K. Kurihara
"Sub-10-nm overlay accuracy in electron beam lithography for nanometer-scale device fabrication"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 37 (12B) 6788-6791 (1998).
228. K. Yamazaki
"Semiconductor fabrication process evaluation by scanning tunneling microscopy atomic force microscopy and related techniques: Mainly impurity concentration observation"
160 437-448 (1998).
229. P. D. Ye, D. Weiss, R. R. Gerhardts, K. von Klitzing, and S. Tarucha
"Huge magnetoresistance oscillations in periodic magnetic fields"
230. U. Zeimer, F. Bugge, S. Gramlich, M. Nasarek, M. Sato, and M. Weyers
"Relaxation behaviour of highly strained GaAs/InxGa1-xAs/GaAs quantum wells depending on MOVPE growth conditions"
160 393-396 (1998).
231. H. L. Zhou, A. V. Nurmikko, C. C. Chu, J. Han, R. L. Gunshor, and T. Takagahara
"Observation of antibound states for exciton pairs by four-wave-mixing experiments in a single ZnSe quantum well"
Phys. Rev. B 58 (16) R10131-R10134 (1998).
