A theme listed in boldface is the subject of research added or updated newly.
We are aiming to obtain silicon nanostructures that can emit strong light at room temperature and are developing the new scanning probe microscopy (SPM) that can detect near-field and far-filed light emitted from the individual nanostructures. The work is to fabricate silicon nanostructures using silicon nanotechnologies and to characterize them by the original light emission SPM in order to reveal light emission mechanisms.
Diamond is expected to exhibit excellent performance as a high-power RF transistor. NTT is focusing on the CVD growth, doping, and characterization of diamond thin film with a view to achieving a high-power RF transistor. The candidate must have significant experience in the crystal growth and characterization of semiconductors, and an understanding of solid-state physics.
Single-electron devices are promising for future current-standard and digital circuits. This project will study the transport properties of silicon-based single-electron devices including single-electron transistors and pumps with the aim of the ultimate control of elemental charges. The candidate must be experienced in transport measurement.
The theme is to investigate material properties and process physics in relation to nanodevice fabrication by using computer-physics methods (mainly, first principles calculations). The work will cover the electronic properties of silicon nanostructures, the thermal oxidation of silicon, the properties of carbon-based materials and their interface and surface physics for nanodevice fabrication and processes.
Nanocarbon materials, such as carbon nanotubes and graphene, are promising candidates for next generation nanoelectronics/photonics applications because of their particular physical properties derived from their low-dimensional structures. Structure control is the most crucial issue as regards the practical use of nanocarbon materials. In this research, the nanocarbon material formation process will be investigated based on surface structure control. Wide and pertinent experience in nanocarbon synthesis, semiconductor crystal growth, surface science in UHV and transport measurements is desired.
In order to understand the mechanism of information processing in brain, especially signal transduction, a multi planar electrode array will be applied in vivo and in vitro to establish long-term access to the neural system. In this study, we hope to find the way to realize an interface between neurons and electrical devices including computers for behavior control.
The conformation of receptor proteins such as neuro-receptors will be analyzed using liquid AFM. Fast scan liquid AFM allows us to observe receptor conformational change in real time. In this study, we are interested in investigating how conformational changes in a receptor affect the functions at the subunit resolution level in real time.
NTT-BRL have succeeded in manipulating the quantum state entanglement between a superconducting flux qubit and a single-mode photon resonator system. The observed vacuum Rabi frequency tells us that the strength of the interaction between a microwave photon and a superconducting qubit is a few thousand times that of the well-known atom-photon interaction. The strong coupling condition can be easily realized in a superconducting circuit. Therefore, new parameter regions that are difficult to achieve with an ordinary atom/molecule system can be opened up with circuit-QEDs using a superconducting qubit. In this project, we will attempt to manipulate the entanglement and quantum noise of a superconducting quantum circuit, generate a squeezed state and coupling with a nanomechanical resonator etc., to achieve the coherent control of several superconducting qubits. We need highly motivated people who are interested in this theme. Experience in dilution refrigerator operation is an advantage.
New quantum phenomena can be expected from the coexistence of and competition between superconductivity and ferromagnetism. We have been investigating the superconducting properties of superconductor/semiconductor junctions exposed to circularly polarized light and superconductor/ferromagnetic metal (semiconductor) junctions by using electrical and/or optical methods. Candidates must have a knowledge of superconductor/ferromagnet hybrid systems and/or optical measurement at low temperatures.
An optical frequency comb is useful for various applications such as metrology, precision spectroscopy, telecommunications. The aim of this theme is to develop a wide mode spacing optical frequency comb at telecommunications wavelength region. Arbitrary optical pulse shaping with optical frequency comb and their applications to coherent control of materials are also promoted.
The purpose of our study is to explore new functionalities using both spin and charge in semiconductors. We are looking for postdoctoral researchers who wish to study transport in semiconductor/ferromagnet hybrid structures with a view to realizing spin FET. The candidates must have a knowledge of ferromagnet/semiconductor hybrid systems and/or nano fabrication processes.
Our aim here is to investigate techniques for fabricating three-dimensional (3D) nanostructures using electron-beam lithography. The targets are the development of 3D nanofabrication technology with a high degree of freedom and the creation of nanodevices with 3D structures.
We are studying micro/nanomechanical devices based on a semiconductor heterostructure. We are investigating their mechanical properties and coupling with electrical and optical properties paying particular attention to possible applications to extremely low-power consumption logic systems. An attempt will also be made to study macroscopic quantum properties by fabricating very small mechanical structures.
Electron correlation in high-mobility two-dimensional electron systems in AlGaAs/GaAs heterostructures are studied through low-temperature transport measurements at high magnetic fields.
Coherent control and spin/charge dynamics of a few-electron system in semiconductor quantum dots are studied through high-frequency transport measurements at low temperatures.
Aluminum nitride (AlN) possesses [the widest/a very wide?] direct bandgap (6.2 eV). NTT has achieved n-type and p-type AlN and used it to fabricate a light emitting diode with the shortest reported emission wavelength of 210 nm. The candidate must have experience of crystal growth and characterization and a knowledge of solid-state physics.
Hexagonal boron nitride (h-BN) has the potential for optical device applications in the ultraviolet spectral region. In this research, heteroepitaxial h-BN layers will be grown on various substrates, and their optical properties will be investigated by using reflectance and cathodoluminescence, etc.
This research project aims to experimentally explore a quantum communication system based on quantum repeater. In particular, it will include quantum memory that stores photon's quantum information, generation of quantum entangled photon pairs, experiments to control photons like single photon frequency conversion, and the integration of these elements to demonstrate quantum communications.
This project will explore new optical phenomena related to light-matter interaction in photonic crystals. We will apply ultra-strong light confinement or extraordinary dispersion in photonic crystals to control of optical transition in nonlinear media or two-level systems (such as quantum dots).
The aim of this research is to propose, design and characterize ultra-small photonic integrated circuit elements composed of photonic crystals and micro-cavities. Skills related to electrodynamic simulation or characterization using ultra-short pulse will be an advantage.
Surface acoustic waves (SAWs) provide both spatial and temporal modulation of band structures. In this research, we investigate dynamic quantum structures, which are produced by electric signals, to control optical properties such as polarization anisotropy and to manipulate spins in semiconductors.
This project will attempt to develop novel nano-patterning technologies (such as nano-printing, nano-imprinting, and nanoelectrode lithography) for the production of nanostructure devices.
This research subject involves a basic theoretical study of the physics of Q.I. (Quantum Information) processing and quantum communication. Particular emphasis will be placed on the interaction between photons and materials or the coherent control of quantum systems by photons or its reverseprocess. Close discussions with experimentalists are welcomed.
Block copolymer lithography is a promising candidate as an innovative lithographic technique for the sub-20-nm technology node. The key challenge as regards its application to nanodevice fabrication lies in achieving the 2D patterning of flexible designs. Our aim is to develop a novel technique for achieving strict control of the alignment of the interfaces of the microphase-separated domains of a block copolymer in combination with electron-beam lithography.
|Researcher Position||Research Associate||Postdoctoral Position|
|Research Specialist||Position for researchers who have extensive amount of research experiences and skills|
|Term of Contract||Research Associate||Annual ( renewable for second year )|
|Research Specialist||Annual ( renewable up to 5 years )|
|Location||NTT Basic Research Laboratories
(3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan)
|Eligibility||Hold Ph.D or recent doctoral graduates|
|Benefits||Annual salary||Research Associate
According to NTT's rule. Please ask for a detail.
Determined by research achievements, experiences and skills
|Other benefits||Same as permanent staff|
|Application||Applicants are required to send the following documents by e-mail.
1.CV with your photograph
2.List of research papers and conference presentations
3.Summary of previous research (1-2 pages)
4.Copies of several best papers (PDF format)
5.Recommendation letters, or contact information of reference persons
NTT Basic Research Laboratories
3-1, Morinosato Wakamiya Atsugi, Kanagawa 243-0198 Japan
TEL +81-46-240-3311 / FAX +81-46-270-2358