英文論文一覧

英文論文一覧

機能物質科学研究部

薄膜材料研究グループ

1.

T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, "High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers," Appl. Phys. Lett. 85 (15), 3089-3091 (2004).

2.
T. Akasaka, T. Nishida, T. Makimoto, and N. Kobayashi, "An InGaN-based horizontal-cavity surface-emitting laser diode," Appl. Phys. Lett. 84 (20), 4104-4106 (2004).

3.
A. Aleksov, M. Kubovic, M. Kasu, P. Schmid, D. Grobe, S. Ertl, M. Schreck, B. Stritzker, and E. Kohn, "Diamond-based electronics for RF applications," Diam. Relat. Mat. 13 (2), 233-240 (2004).

4.

B. Chesca, K. Ehrhardt, M. Mossle, R. Straub, D. Koelle, R. Kleiner, and A. Tsukada, "Phase-sensitive evidence for a predominant d-wave pairing symmetry in the electron doped superconductor La2-xCexCuO4-y," Physica C 408-10, 321-323 (2004).

5.
T. Fujii, I. Terasaki, and A. Matsuda, "Thermopower anisotropy of lightly-doped and optimally-doped Bi2Sr2-xLaxCaCu2O8+delta single crystals," Physica C 408-10, 674-676 (2004).

6.
T. Hashizume, S. Anantathanasarn, N. Negoro, E. Sano, H. Hasegawa, K. Kumakura, and T. Makimoto, "Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (6B), L777-L779 (2004).

7.
M. Hiroki, K. Kumakura, T. Makimoto, N. Kobayashi, and T. Kobayashi, "Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (4B), 1930-1933 (2004).

8.
S. Karimoto and M. Naito, "Electron-doped infinite-layer thin films with T-C over 40 K grown on DyScO3 substrates," Appl. Phys. Lett. 84 (12), 2136-2138 (2004).

9.
S. Karimoto and M. Naito, "Electron-doped infinite-layer thin films with T-C(zero)=41 K grown on DyScO3 substrate," Physica C 412-14, 1349-1353 (2004).

10.
M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, R. Sauer, E. Kohn, and T. Makimoto, ".Properties of (111) diamond homoepitaxial layer and its application to field-effect tr.ansistor," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (7B), L975-L977 (20.04).

11.
M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, and N. Kobayashi, "Influence of epitaxy on the surface conduction of diamond film," Diam. Relat. Mat. 13 (2), 226-232 (2004).

12.
A. Kubovic, A. Denisenko, W. Ebert, M. Kasu, I. Kallfass, and E. Kohn, "Electronic surface barrier characteristics of H-terminated and surface conductive diamond," Diam. Relat. Mat. 13 (4-8), 755-760 (2004).

13.
M. Kubovic, M. Kasu, I. Kallfass, M. Neuburger, A. Aleksov, G. Koley, M. G. Spencer, and E. Kohn, "Microwave performance evaluation of diamond surface channel FETs," Diam. Relat. Mat. 13 (4-8), 802-807 (2004).

14.
J. Kurian and M. Naito, "Growth of epitaxial CeO2 thin films on r-cut sapphire by molecular beam epitaxy," Physica C 402 (1-2), 31-37 (2004).

15.
J. Kurian and M. Naito, "Low microwave surface resistance in NdBa2Cu3O7-delta films grown by molecular beam epitaxy," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (11B), L1502-L1505 (2004).

16.
J. Kurian, M. Naito, H. Sato, and K. Cho, "Large area RE-123 thin films for microwave applications grown by molecular beam epitaxy," Physica C 412-14, 1513-1518 (2004).

17.
T. Makimoto, K. Kumakura, and N. Kobayashi, "Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (4B), 1922-1924 (2004).

18.
T. Makimoto, Y. Yamauchi, and K. Kumakura, "High-power characteristics of GaN/InGaN double heterojunction bipolar transistors," Appl. Phys. Lett. 84 (11), 1964-1966 (2004).

19.
H. Matsui, T. Sato, T. Takahashi, S. C. Wang, H. B. Yang, H. Ding, T. Fujii, T. Watanabe, and A. Matsuda, "Spectral evidence for Bogoliubov quasiparticle in triple-layered high-T-c superconductor Bi2Sr2Ca2Cu3O10," Physica C 408-10, 814-815 (2004).

20.
T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto, "MOVPE growth and photoluminescence of wurtzite InN," J. Cryst. Growth 269 (1), 139-144 (2004).

21.
M. Naito and K. Ueda, "MgB2 thin films for superconducting electronics," Supercond. Sci. Technol. 17 (7), R1-R18 (2004).

22.
T. Nishida, T. Makimoto, H. Saito, and T. Ban, "AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates," Appl. Phys. Lett. 84 (6), 1002-1003 (2004).

23.
K. Onomitsu, T. Okabe, T. Makimoto, H. Saito, M. Ramsteiner, H. J. Zhu, A. Kawaharazuka, K. Ploog, and Y. Horikoshi, "Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (6B), L756-L758 (2004).

24.
H. Sato and K. Cho, "Third-order intermodulation measurements for superconducting bandpass filters," IEICE Trans. Electron. E87C (5), 708-713 (2004).

25.
H. Sato, J. Kurian, and M. Naito, "Third-order intermodulation measurements of microstrip bandpass filters based on high-temperature superconductors," IEEE Trans. Microw. Theory Tech. 52 (12), 2658-2663 (2004).

26.
H. Sato, A. Tsukada, and M. Naito, "La-214 thin films under epitaxial strain," Physica C 408-10, 848-852 (2004).

27.
T. Sato, H. Matsui, T. Takahashi, H. Ding, H. B. Yang, S. C. Wang, T. Fujii, T. Watanabe, A. Matsuda, T. Terashima, and K. Kadowaki, "Fermi surface, superconducting gap, and many-body effects in Bi2Sr2Can-1CunO2n+4 (n=1-3)," Physica C 408-10, 812-813 (2004).

28.
T. Sato, H. Matsui, K. Terashima, T. Takahashi, H. Ding, H. B. Yang, S. C. Wang, T. Fujii, T. Watanabe, A. Matsuda, T. Terashima, and K. Kadowaki, "Magnetic interaction in hole-doped high-T-c superconductors observed by angle-resolved photoemission spectroscopy," Physica C 412-14, 51-58 (2004).

29.
Y. Taniyasu, M. Kasu, and T. Makimoto, "Electrical conduction properties of n-type Si-doped AlN with high electron mobility (> 100 cm(2) V-1 s(-1))," Appl. Phys. Lett. 85 (20), 4672-4674 (2004).

30.
Y. Taniyasu, M. Kasu, and T. Makimoto, "Field emission properties of heavily Si-doped AlN in triode-type display structure," Appl. Phys. Lett. 84 (12), 2115-2117 (2004).

31.
K. Tsubaki, N. Maeda, T. Saitoh, and N. Kobayashi, "Hall resistance hysteresis in AlGaN/GaN 2DEG," Physica E 21 (2-4), 676-678 (2004).

32.
K. Ueda and M. Naito, "Tunnel junctions on as-grown MgB2 films," Physica C 408-10, 134-135 (2004).

33.
C. X. Wang, N. Maeda, K. Tsubaki, N. Kobayashi, and T. Makimoto, "Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (6A), 3356-3359 (2004).

34.
C. X. Wang, K. Tsubaki, N. Kobayashi, T. Makimoto, and N. Maeda, "Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett. 84 (13), 2313-2315 (2004).

35.
H. Yamamoto, K. Aoki, A. Tsukada, and M. Naito, "Growth of Ba1-xKxBiO3 thin films by molecular beam epitaxy," Physica C 412-14, 192-195 (2004).

36.
H. Yamamoto, M. Naito, A. Tsukada, and S. Suzuki, "In situ angle-resolved photoemission study of MBE-grown (La,Ce)(2)CuO4 thin films," Physica C 412-14, 134-138 (2004).

低次元構造研究グループ

1.

K. Akiba, N. Yamamoto, V. Grillo, A. Genseki, and Y. Watanabe, "Anomalous temperature and excitation power dependence of cathodoluminescence from InAs quantum dots," Phys. Rev. B 70 (16), 165322 (2004).

2.
S. Bhunia, T. Kawamura, S. Fujikawa, H. Nakashima, K. Furukawa, K. Torimitsu, and Y. Watanabe, "Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy," Thin Solid Films 464-65, 244-247 (2004).

3.
S. Bhunia, T. Kawamura, S. Fujikawa, K. Tokushima, and Y. Watanabe, "Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy," Physica E 21 (2-4), 583-587 (2004).

4.

S. Bhunia, T. Kawamura, S. Fujikawa, and Y. Watanabe, "Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy," Physica E 24 (1-2), 138-142 (2004).

5.
H. Hibino, Y. Homma, C. W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong, "Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy," Appl. Surf. Sci. 237 (1-4), 51-57 (2004).

6.
Y. Homma, S. Suzuki, Y. Kobayashi, M. Nagase, and D. Takagi, "Mechanism of bright selective imaging of single-walled carbon nanotubes on insulators by scanning electron microscopy," Appl. Phys. Lett. 84 (10), 1750-1752 (2004).

7.
Y. J. Jung, Y. Homma, R. Vajtai, Y. Kobayashi, T. Ogino, and P. M. Ajayan, "Straightening suspended single walled carbon nanotubes by ion irradiation," Nano Lett. 4 (6), 1109-1113 (2004).

8.
Y. Kobayashi, H. Nakashima, D. Takagi, and Y. Homma, "CVD growth of single-walled carbon nanotubes using size-controlled nanoparticle catalyst," Thin Solid Films 464-65, 286-289 (2004).

9.
Y. Kobayashi, D. Takagi, Y. Ueno, and Y. Homma, "Characterization of carbon nanotubes suspended between nanostructures using micro-Raman spectroscopy," Physica E 24 (1-2), 26-31 (2004).

10.
Y. Kobayashi, T. Yamashita, Y. Ueno, O. Niwa, Y. Homma, and T. Ogino, "Extremely intense Raman signals from single-walled carbon nanotubes suspended between Si nanopillars," Chem. Phys. Lett. 386 (1-3), 153-157 (2004).

11.
J. Lefebvre, P. Finnie, and Y. Homma, "Temperature-dependent photoluminescence from single-walled carbon nanotubes," Phys. Rev. B 70 (4), 045419 (2004).

12.
J. Lefebvre, J. M. Fraser, P. Finnie, and Y. Homma, "Photoluminescence from an individual single-walled carbon nanotube," Phys. Rev. B 69 (7), 075403 (2004).

13.
J. Lefebvre, J. M. Fraser, Y. Homma, and P. Finnie, "Photoluminescence from single-walled carbon nanotubes: a comparison between suspended and micelle-encapsulated nanotubes," Appl. Phys. A-Mater. Sci. Process. 78 (8), 1107-1110 (2004).

14.
F. Lin, K. Sumitomo, Y. Homma, and T. Ogino, "STM observations of three-dimensional Ge islands on Si(111) surfaces with different step orientations and step-bunching conditions," Surf. Sci. 562 (1-3), 15-21 (2004).

15.
F. Maeda, E. Laffosse, Y. Watanabe, S. Suzuki, Y. Homma, M. Suzuki, T. Kitada, T. Ogiwara, A. Tanaka, M. Kimura, V. A. Mihai, H. Yoshikawa, and S. Fukushima, "Surface and interface reactions of catalysts for carbon nanotube growth on Si substrates studied by soft X-ray photoelectron spectroscopy," Physica E 24 (1-2), 19-25 (2004).

16.
F. Maeda and Y. Watanabe, "Real-time analysis of a surface phase transition of GaAs(001) by core-level photoelectron spectroscopy and photoelectron diffraction," J. Electron Spectrosc. Relat. Phenom. 137-40, 107-112 (2004).

17.
F. Maeda and Y. Watanabe, "Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001)," Appl. Surf. Sci. 237 (1-4), 224-229 (2004).

18.
T. Ogino, Y. Homma, K. Ishibashi, and H. Yamaguchi, "Proceedings of the International symposium on Functional Semiconductors Nanostructures 2003 FSNS2003 - Held in Atsugi, Kanagawa, Japan, 12-14 November 2003 - Preface," Physica E 24 (1-2), VII-VII (2004).

19.
H. Omi and Y. Homma, "Stiffness of step bunches on Si(111)," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (6B), L822-L824 (2004).

20.
H. Omi, Y. Homma, T. Ogino, S. Stoyanov, and V. Tonchev, "Design of atomic step networks on Si(111) through strain distribution control," J. Appl. Phys. 95 (1), 263-266 (2004).

21.
K. Prabhakaran, F. Meneau, T. Murashita, G. N. Greaves, G. Sankar, Y. Homma, and T. Gino, "Reply to "comment on luminescent nanoring structures on silicon"," Adv. Mater. 16 (17), 1495-1496 (2004).

22.
K. Sumitomo, F. Lin, Y. Homma, and T. Ogino, "Selective formation of Ge nanostructures on Si(111) surface with patterned steps," Appl. Surf. Sci. 237 (1-4), 68-74 (2004).

23.
S. Suzuki, K. Kanzaki, Y. Homma, and S. Y. Fukuba, "Low-acceleration-voltage electron irradiation damage in single-walled carbon nanotubes," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (8B), L1118-L1120 (2004).

24.
S. Suzuki, Y. Watanabe, Y. Homma, S. Fukuba, S. Heun, and A. Locatelli, "Work functions of individual single-walled carbon nanotubes," Appl. Phys. Lett. 85 (1), 127-129 (2004).

25.
S. Suzuki, Y. Watanabe, T. Ogino, Y. Homma, D. Takagi, S. Heun, L. Gregoratti, A. Barinov, and M. Kiskinova, "Observation of single-walled carbon nanotubes by photoemission microscopy," Carbon 42 (3), 559-563 (2004).

26.
D. Takagi, Y. Homma, and Y. Kobayashi, "Selective growth of individual single-walled carbon nanotubes suspended between pillar structures," Physica E 24 (1-2), 1-5 (2004).

27.
F. Toujou, S. Yoshikawa, Y. Homma, A. Takano, H. Takenaka, M. Tomita, Z. Li, T. Hasegawa, K. Sasakawa, M. Schuhmacher, A. Merkulov, H. K. Kim, D. W. Moon, T. Hong, and J. Y. Won, "Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test," Appl. Surf. Sci. 231-2, 649-652 (2004).

28.
Y. Watanabe, S. Bhunia, S. Fujikawa, T. Kawamura, H. Nakashima, K. Furukawa, and K. Torimitsu, "Heteroepitaxial metalorganic vapor phase epitaxial growth of InP nanowires on GaP(111)B," Thin Solid Films 464-65, 248-250 (2004).

29.
Y. Watanabe, H. Hibino, S. Bhunia, K. Tateno, and T. Sekiguchi, "Site-controlled InP nanowires grown on patterned Si substrates," Physica E 24 (1-2), 133-137 (2004).

30.
Y. Watanabe, N. Yamamoto, S. Bhunia, T. Kawamura, and S. Fujikawa, "Structural and optical properties of vertically aligned TnP nanowires grown by metal organic vapor phase epitaxy," Physica E 23 (3-4), 305-308 (2004).

31.
Z. H. Zhang, K. Sumitomo, F. Lin, H. Omi, and T. Ogino, "Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth," Physica E 24 (1-2), 157-160 (2004).

32.
Z. H. Zhang, K. Sumitomo, H. Omi, T. Ogino, and X. Zhu, "Ge molecular beam epitaxy on Si(113): surface structures, nanowires and nanodots," Surf. Interface Anal. 36 (2), 114-118 (2004).

分子生体機能研究グループ

1.

K. Ajito, C. X. Han, and K. Torimitsu, "Detection of glutamate in optically trapped single nerve terminals by Raman spectroscopy," Anal. Chem. 76 (9), 2506-2510 (2004).

2.
K. Furukawa, H. Nakashima, K. Ajito, Y. Kashimura, W. Hu, and K. Torimitsu, "Observation and manipulation of nanestructures formed by rigid rodlike polymers," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (7B), 4521-4524 (2004).

3.
W. P. Hu, M. Matsumura, K. Furukawa, and K. Torimitsu, "Oxygen plasma generated copper/copper oxides nanoparticles," J. Phys. Chem. B 108 (35), 13116-13118 (2004).

4.

W. P. Hu, H. Nakashima, K. Furukawa, Y. Kashimura, K. Ajito, C. Han, and K. Torimitsu, "Carrier injection from gold electrodes into thioacetyl-end-functionalized poly(para-phenyleneethynylene)s," Phys. Rev. B 69 (16), 165207 (2004).

5.
W. P. Hu, H. Nakashima, K. Furukawa, Y. Kashimura, K. Ajito, and K. Torimitsu, "Self-assembled rigid conjugated polymer nanojunction and its nonlinear current-voltage characteristics at room temperature," Appl. Phys. Lett. 85 (1), 115-117 (2004).

6.
T. Ishimoto, H. Tokiwa, H. Teramae, and U. Nagashima, "Development of an ab initio MO-MD program based on fragment MO method - an attempt to analyze the fluctuation of protein," Chem. Phys. Lett. 387 (4-6), 460-465 (2004).

7.
M. Kobayashi, J. Buck, and L. R. Levin, "Conservation of functional domain structure in bicarbonate-regulated "soluble" adenylyl cyclases in bacteria and eukaryotes," Dev. Genes Evol. 214 (10), 503-509 (2004).

8.
K. Ohtawara and H. Teramae, "Study on optimization of molecular structure using Hamiltonian algorithm," Chem. Phys. Lett. 390 (1-3), 84-88 (2004).

9.
I. Suzuki, Y. Sugio, H. Moriguchi, K. Takahashi, T. Kaneko, Y. Jimbo, and K. Yasuda, "Pattern modification of a neuronal network for on-chip single-cell-based electrophysiological measurement using photo-thermal etching of an agarose architecture with a multi-electrode array," Biophys. J. 86 (1), 271A-271A (2004).

10.
T. Yamazaki, Y. Murata, K. Komatsu, K. Furukawa, M. Morita, N. Maruyama, T. Yamao, and S. Fujita, "Synthesis and electrolytic polymerization of the ethylenedioxy-substituted terthiophene-fullerene dyad," Org. Lett. 6 (26), 4865-4868 (2004).

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1.	T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, "High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers," Appl. Phys. Lett. 85 (15), 3089-3091 (2004).
2.	T. Akasaka, T. Nishida, T. Makimoto, and N. Kobayashi, "An InGaN-based horizontal-cavity surface-emitting laser diode," Appl. Phys. Lett. 84 (20), 4104-4106 (2004).
3.	A. Aleksov, M. Kubovic, M. Kasu, P. Schmid, D. Grobe, S. Ertl, M. Schreck, B. Stritzker, and E. Kohn, "Diamond-based electronics for RF applications," Diam. Relat. Mat. 13 (2), 233-240 (2004).
4.	B. Chesca, K. Ehrhardt, M. Mossle, R. Straub, D. Koelle, R. Kleiner, and A. Tsukada, "Phase-sensitive evidence for a predominant d-wave pairing symmetry in the electron doped superconductor La2-xCexCuO4-y," Physica C 408-10, 321-323 (2004).
5.	T. Fujii, I. Terasaki, and A. Matsuda, "Thermopower anisotropy of lightly-doped and optimally-doped Bi2Sr2-xLaxCaCu2O8+delta single crystals," Physica C 408-10, 674-676 (2004).
6.	T. Hashizume, S. Anantathanasarn, N. Negoro, E. Sano, H. Hasegawa, K. Kumakura, and T. Makimoto, "Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (6B), L777-L779 (2004).
7.	M. Hiroki, K. Kumakura, T. Makimoto, N. Kobayashi, and T. Kobayashi, "Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (4B), 1930-1933 (2004).
8.	S. Karimoto and M. Naito, "Electron-doped infinite-layer thin films with T-C over 40 K grown on DyScO3 substrates," Appl. Phys. Lett. 84 (12), 2136-2138 (2004).
9.	S. Karimoto and M. Naito, "Electron-doped infinite-layer thin films with T-C(zero)=41 K grown on DyScO3 substrate," Physica C 412-14, 1349-1353 (2004).
10.	M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, R. Sauer, E. Kohn, and T. Makimoto, ".Properties of (111) diamond homoepitaxial layer and its application to field-effect tr.ansistor," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (7B), L975-L977 (20.04).
11.	M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, and N. Kobayashi, "Influence of epitaxy on the surface conduction of diamond film," Diam. Relat. Mat. 13 (2), 226-232 (2004).
12.	A. Kubovic, A. Denisenko, W. Ebert, M. Kasu, I. Kallfass, and E. Kohn, "Electronic surface barrier characteristics of H-terminated and surface conductive diamond," Diam. Relat. Mat. 13 (4-8), 755-760 (2004).
13.	M. Kubovic, M. Kasu, I. Kallfass, M. Neuburger, A. Aleksov, G. Koley, M. G. Spencer, and E. Kohn, "Microwave performance evaluation of diamond surface channel FETs," Diam. Relat. Mat. 13 (4-8), 802-807 (2004).
14.	J. Kurian and M. Naito, "Growth of epitaxial CeO2 thin films on r-cut sapphire by molecular beam epitaxy," Physica C 402 (1-2), 31-37 (2004).
15.	J. Kurian and M. Naito, "Low microwave surface resistance in NdBa2Cu3O7-delta films grown by molecular beam epitaxy," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (11B), L1502-L1505 (2004).
16.	J. Kurian, M. Naito, H. Sato, and K. Cho, "Large area RE-123 thin films for microwave applications grown by molecular beam epitaxy," Physica C 412-14, 1513-1518 (2004).
17.	T. Makimoto, K. Kumakura, and N. Kobayashi, "Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (4B), 1922-1924 (2004).
18.	T. Makimoto, Y. Yamauchi, and K. Kumakura, "High-power characteristics of GaN/InGaN double heterojunction bipolar transistors," Appl. Phys. Lett. 84 (11), 1964-1966 (2004).
19.	H. Matsui, T. Sato, T. Takahashi, S. C. Wang, H. B. Yang, H. Ding, T. Fujii, T. Watanabe, and A. Matsuda, "Spectral evidence for Bogoliubov quasiparticle in triple-layered high-T-c superconductor Bi2Sr2Ca2Cu3O10," Physica C 408-10, 814-815 (2004).
20.	T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto, "MOVPE growth and photoluminescence of wurtzite InN," J. Cryst. Growth 269 (1), 139-144 (2004).
21.	M. Naito and K. Ueda, "MgB2 thin films for superconducting electronics," Supercond. Sci. Technol. 17 (7), R1-R18 (2004).
22.	T. Nishida, T. Makimoto, H. Saito, and T. Ban, "AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates," Appl. Phys. Lett. 84 (6), 1002-1003 (2004).
23.	K. Onomitsu, T. Okabe, T. Makimoto, H. Saito, M. Ramsteiner, H. J. Zhu, A. Kawaharazuka, K. Ploog, and Y. Horikoshi, "Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (6B), L756-L758 (2004).
24.	H. Sato and K. Cho, "Third-order intermodulation measurements for superconducting bandpass filters," IEICE Trans. Electron. E87C (5), 708-713 (2004).
25.	H. Sato, J. Kurian, and M. Naito, "Third-order intermodulation measurements of microstrip bandpass filters based on high-temperature superconductors," IEEE Trans. Microw. Theory Tech. 52 (12), 2658-2663 (2004).
26.	H. Sato, A. Tsukada, and M. Naito, "La-214 thin films under epitaxial strain," Physica C 408-10, 848-852 (2004).
27.	T. Sato, H. Matsui, T. Takahashi, H. Ding, H. B. Yang, S. C. Wang, T. Fujii, T. Watanabe, A. Matsuda, T. Terashima, and K. Kadowaki, "Fermi surface, superconducting gap, and many-body effects in Bi2Sr2Can-1CunO2n+4 (n=1-3)," Physica C 408-10, 812-813 (2004).
28.	T. Sato, H. Matsui, K. Terashima, T. Takahashi, H. Ding, H. B. Yang, S. C. Wang, T. Fujii, T. Watanabe, A. Matsuda, T. Terashima, and K. Kadowaki, "Magnetic interaction in hole-doped high-T-c superconductors observed by angle-resolved photoemission spectroscopy," Physica C 412-14, 51-58 (2004).
29.	Y. Taniyasu, M. Kasu, and T. Makimoto, "Electrical conduction properties of n-type Si-doped AlN with high electron mobility (> 100 cm(2) V-1 s(-1))," Appl. Phys. Lett. 85 (20), 4672-4674 (2004).
30.	Y. Taniyasu, M. Kasu, and T. Makimoto, "Field emission properties of heavily Si-doped AlN in triode-type display structure," Appl. Phys. Lett. 84 (12), 2115-2117 (2004).
31.	K. Tsubaki, N. Maeda, T. Saitoh, and N. Kobayashi, "Hall resistance hysteresis in AlGaN/GaN 2DEG," Physica E 21 (2-4), 676-678 (2004).
32.	K. Ueda and M. Naito, "Tunnel junctions on as-grown MgB2 films," Physica C 408-10, 134-135 (2004).
33.	C. X. Wang, N. Maeda, K. Tsubaki, N. Kobayashi, and T. Makimoto, "Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (6A), 3356-3359 (2004).
34.	C. X. Wang, K. Tsubaki, N. Kobayashi, T. Makimoto, and N. Maeda, "Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett. 84 (13), 2313-2315 (2004).
35.	H. Yamamoto, K. Aoki, A. Tsukada, and M. Naito, "Growth of Ba1-xKxBiO3 thin films by molecular beam epitaxy," Physica C 412-14, 192-195 (2004).
36.	H. Yamamoto, M. Naito, A. Tsukada, and S. Suzuki, "In situ angle-resolved photoemission study of MBE-grown (La,Ce)(2)CuO4 thin films," Physica C 412-14, 134-138 (2004).

1.	K. Akiba, N. Yamamoto, V. Grillo, A. Genseki, and Y. Watanabe, "Anomalous temperature and excitation power dependence of cathodoluminescence from InAs quantum dots," Phys. Rev. B 70 (16), 165322 (2004).
2.	S. Bhunia, T. Kawamura, S. Fujikawa, H. Nakashima, K. Furukawa, K. Torimitsu, and Y. Watanabe, "Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy," Thin Solid Films 464-65, 244-247 (2004).
3.	S. Bhunia, T. Kawamura, S. Fujikawa, K. Tokushima, and Y. Watanabe, "Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy," Physica E 21 (2-4), 583-587 (2004).
4.	S. Bhunia, T. Kawamura, S. Fujikawa, and Y. Watanabe, "Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy," Physica E 24 (1-2), 138-142 (2004).
5.	H. Hibino, Y. Homma, C. W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong, "Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy," Appl. Surf. Sci. 237 (1-4), 51-57 (2004).
6.	Y. Homma, S. Suzuki, Y. Kobayashi, M. Nagase, and D. Takagi, "Mechanism of bright selective imaging of single-walled carbon nanotubes on insulators by scanning electron microscopy," Appl. Phys. Lett. 84 (10), 1750-1752 (2004).
7.	Y. J. Jung, Y. Homma, R. Vajtai, Y. Kobayashi, T. Ogino, and P. M. Ajayan, "Straightening suspended single walled carbon nanotubes by ion irradiation," Nano Lett. 4 (6), 1109-1113 (2004).
8.	Y. Kobayashi, H. Nakashima, D. Takagi, and Y. Homma, "CVD growth of single-walled carbon nanotubes using size-controlled nanoparticle catalyst," Thin Solid Films 464-65, 286-289 (2004).
9.	Y. Kobayashi, D. Takagi, Y. Ueno, and Y. Homma, "Characterization of carbon nanotubes suspended between nanostructures using micro-Raman spectroscopy," Physica E 24 (1-2), 26-31 (2004).
10.	Y. Kobayashi, T. Yamashita, Y. Ueno, O. Niwa, Y. Homma, and T. Ogino, "Extremely intense Raman signals from single-walled carbon nanotubes suspended between Si nanopillars," Chem. Phys. Lett. 386 (1-3), 153-157 (2004).
11.	J. Lefebvre, P. Finnie, and Y. Homma, "Temperature-dependent photoluminescence from single-walled carbon nanotubes," Phys. Rev. B 70 (4), 045419 (2004).
12.	J. Lefebvre, J. M. Fraser, P. Finnie, and Y. Homma, "Photoluminescence from an individual single-walled carbon nanotube," Phys. Rev. B 69 (7), 075403 (2004).
13.	J. Lefebvre, J. M. Fraser, Y. Homma, and P. Finnie, "Photoluminescence from single-walled carbon nanotubes: a comparison between suspended and micelle-encapsulated nanotubes," Appl. Phys. A-Mater. Sci. Process. 78 (8), 1107-1110 (2004).
14.	F. Lin, K. Sumitomo, Y. Homma, and T. Ogino, "STM observations of three-dimensional Ge islands on Si(111) surfaces with different step orientations and step-bunching conditions," Surf. Sci. 562 (1-3), 15-21 (2004).
15.	F. Maeda, E. Laffosse, Y. Watanabe, S. Suzuki, Y. Homma, M. Suzuki, T. Kitada, T. Ogiwara, A. Tanaka, M. Kimura, V. A. Mihai, H. Yoshikawa, and S. Fukushima, "Surface and interface reactions of catalysts for carbon nanotube growth on Si substrates studied by soft X-ray photoelectron spectroscopy," Physica E 24 (1-2), 19-25 (2004).
16.	F. Maeda and Y. Watanabe, "Real-time analysis of a surface phase transition of GaAs(001) by core-level photoelectron spectroscopy and photoelectron diffraction," J. Electron Spectrosc. Relat. Phenom. 137-40, 107-112 (2004).
17.	F. Maeda and Y. Watanabe, "Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001)," Appl. Surf. Sci. 237 (1-4), 224-229 (2004).
18.	T. Ogino, Y. Homma, K. Ishibashi, and H. Yamaguchi, "Proceedings of the International symposium on Functional Semiconductors Nanostructures 2003 FSNS2003 - Held in Atsugi, Kanagawa, Japan, 12-14 November 2003 - Preface," Physica E 24 (1-2), VII-VII (2004).
19.	H. Omi and Y. Homma, "Stiffness of step bunches on Si(111)," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (6B), L822-L824 (2004).
20.	H. Omi, Y. Homma, T. Ogino, S. Stoyanov, and V. Tonchev, "Design of atomic step networks on Si(111) through strain distribution control," J. Appl. Phys. 95 (1), 263-266 (2004).
21.	K. Prabhakaran, F. Meneau, T. Murashita, G. N. Greaves, G. Sankar, Y. Homma, and T. Gino, "Reply to "comment on luminescent nanoring structures on silicon"," Adv. Mater. 16 (17), 1495-1496 (2004).
22.	K. Sumitomo, F. Lin, Y. Homma, and T. Ogino, "Selective formation of Ge nanostructures on Si(111) surface with patterned steps," Appl. Surf. Sci. 237 (1-4), 68-74 (2004).
23.	S. Suzuki, K. Kanzaki, Y. Homma, and S. Y. Fukuba, "Low-acceleration-voltage electron irradiation damage in single-walled carbon nanotubes," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 43 (8B), L1118-L1120 (2004).
24.	S. Suzuki, Y. Watanabe, Y. Homma, S. Fukuba, S. Heun, and A. Locatelli, "Work functions of individual single-walled carbon nanotubes," Appl. Phys. Lett. 85 (1), 127-129 (2004).
25.	S. Suzuki, Y. Watanabe, T. Ogino, Y. Homma, D. Takagi, S. Heun, L. Gregoratti, A. Barinov, and M. Kiskinova, "Observation of single-walled carbon nanotubes by photoemission microscopy," Carbon 42 (3), 559-563 (2004).
26.	D. Takagi, Y. Homma, and Y. Kobayashi, "Selective growth of individual single-walled carbon nanotubes suspended between pillar structures," Physica E 24 (1-2), 1-5 (2004).
27.	F. Toujou, S. Yoshikawa, Y. Homma, A. Takano, H. Takenaka, M. Tomita, Z. Li, T. Hasegawa, K. Sasakawa, M. Schuhmacher, A. Merkulov, H. K. Kim, D. W. Moon, T. Hong, and J. Y. Won, "Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test," Appl. Surf. Sci. 231-2, 649-652 (2004).
28.	Y. Watanabe, S. Bhunia, S. Fujikawa, T. Kawamura, H. Nakashima, K. Furukawa, and K. Torimitsu, "Heteroepitaxial metalorganic vapor phase epitaxial growth of InP nanowires on GaP(111)B," Thin Solid Films 464-65, 248-250 (2004).
29.	Y. Watanabe, H. Hibino, S. Bhunia, K. Tateno, and T. Sekiguchi, "Site-controlled InP nanowires grown on patterned Si substrates," Physica E 24 (1-2), 133-137 (2004).
30.	Y. Watanabe, N. Yamamoto, S. Bhunia, T. Kawamura, and S. Fujikawa, "Structural and optical properties of vertically aligned TnP nanowires grown by metal organic vapor phase epitaxy," Physica E 23 (3-4), 305-308 (2004).
31.	Z. H. Zhang, K. Sumitomo, F. Lin, H. Omi, and T. Ogino, "Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth," Physica E 24 (1-2), 157-160 (2004).
32.	Z. H. Zhang, K. Sumitomo, H. Omi, T. Ogino, and X. Zhu, "Ge molecular beam epitaxy on Si(113): surface structures, nanowires and nanodots," Surf. Interface Anal. 36 (2), 114-118 (2004).

1.	K. Ajito, C. X. Han, and K. Torimitsu, "Detection of glutamate in optically trapped single nerve terminals by Raman spectroscopy," Anal. Chem. 76 (9), 2506-2510 (2004).
2.	K. Furukawa, H. Nakashima, K. Ajito, Y. Kashimura, W. Hu, and K. Torimitsu, "Observation and manipulation of nanestructures formed by rigid rodlike polymers," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 43 (7B), 4521-4524 (2004).
3.	W. P. Hu, M. Matsumura, K. Furukawa, and K. Torimitsu, "Oxygen plasma generated copper/copper oxides nanoparticles," J. Phys. Chem. B 108 (35), 13116-13118 (2004).
4.	W. P. Hu, H. Nakashima, K. Furukawa, Y. Kashimura, K. Ajito, C. Han, and K. Torimitsu, "Carrier injection from gold electrodes into thioacetyl-end-functionalized poly(para-phenyleneethynylene)s," Phys. Rev. B 69 (16), 165207 (2004).
5.	W. P. Hu, H. Nakashima, K. Furukawa, Y. Kashimura, K. Ajito, and K. Torimitsu, "Self-assembled rigid conjugated polymer nanojunction and its nonlinear current-voltage characteristics at room temperature," Appl. Phys. Lett. 85 (1), 115-117 (2004).
6.	T. Ishimoto, H. Tokiwa, H. Teramae, and U. Nagashima, "Development of an ab initio MO-MD program based on fragment MO method - an attempt to analyze the fluctuation of protein," Chem. Phys. Lett. 387 (4-6), 460-465 (2004).
7.	M. Kobayashi, J. Buck, and L. R. Levin, "Conservation of functional domain structure in bicarbonate-regulated "soluble" adenylyl cyclases in bacteria and eukaryotes," Dev. Genes Evol. 214 (10), 503-509 (2004).
8.	K. Ohtawara and H. Teramae, "Study on optimization of molecular structure using Hamiltonian algorithm," Chem. Phys. Lett. 390 (1-3), 84-88 (2004).
9.	I. Suzuki, Y. Sugio, H. Moriguchi, K. Takahashi, T. Kaneko, Y. Jimbo, and K. Yasuda, "Pattern modification of a neuronal network for on-chip single-cell-based electrophysiological measurement using photo-thermal etching of an agarose architecture with a multi-electrode array," Biophys. J. 86 (1), 271A-271A (2004).
10.	T. Yamazaki, Y. Murata, K. Komatsu, K. Furukawa, M. Morita, N. Maruyama, T. Yamao, and S. Fujita, "Synthesis and electrolytic polymerization of the ethylenedioxy-substituted terthiophene-fullerene dyad," Org. Lett. 6 (26), 4865-4868 (2004).