英文論文一覧

量子電子物性研究部

ナノデバイス研究グループ

1.

T. Akiyama, H. Kageshima, and T. Ito, "First-principles analyses of O-2 molecules around ultrathin SiO2/Si(100) interface," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(11B), 7903-7908 (2004).2. K. Degawa, T. Aoki, T. Higuchi, H. Inokawa, and Y. Takahashi, "A single-electron-transistor logic gate family for binary, multiple-valued and mixed-mode logic," IEICE Trans. Electron.E87C(11), 1827-1836 (2004).3. A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi, "Current quantization due to single-electron transfer in Si-wire charge-coupled devices," Appl. Phys. Lett.84(8), 1323-1325 (2004).4.

S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, Y. Takahashi, and K. Shiraish, "Effect of Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(11B), 7837-7842 (2004).5. S. Horiguchi, A. Fujiwara, H. Inokawa, and Y. Takahashi, "Analysis of back-gate voltage dependence of threshold voltage of thin silicon-on-insulator metal-oxide-semiconductor field-effect transistor and its application to Si single-electron transistor," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(4B), 2036-2040 (2004).6. H. Inokawa and Y. Takahashi, "Simultaneous-sweep method for evaluation of single-electron transistors with barriers induced by gate electric field," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett.43(8B), L1048-L1050 (2004).7. H. Inokawa, Y. Takahashi, K. Degawa, T. Aoki, and T. Higuchi, "A simulation methodology for single-electron multiple-valued logics and its application to a latched parallel counter," IEICE Trans. Electron.E87C(11), 1818-1826 (2004).8. H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, and K. Shiraishi, "Theoretical study of excess Si emitted from Si-oxide/Si interfaces," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(12), 8223-8226 (2004).9. S. J. Kim, Y. Ono, Y. Takahashi, and J. B. Choi, "Real-time observation of single-electron movement through silicon single-electron transistor," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(10), 6863-6867 (2004).10. S. M. Koo, A. Fujiwara, J. P. Han, E. M. Vogel, C. A. Richter, and J. E. Bonevich, "High inversion current in silicon nanowire field effect transistors," Nano Lett.4(11), 2197-2201 (2004).11. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi, "Automatic control of oscillation phase of a single-electron transistor," IEEE Electron Device Lett.25(1), 31-33 (2004).12. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi, "Multifunctional Boolean logic using single-electron transistors," IEICE Trans. Electron.E87C(11), 1809-1817 (2004).13. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi, "Multilevel memory using an electrically formed single-electron box," Appl. Phys. Lett.85(7), 1277-1279 (2004).14. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi, "Multilevel memory using single-electron turnstile," Electron. Lett.40(4), 229-230 (2004).15. M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi, "Correlated diffusion of silicon and boron in thermally grown SiO2," Appl. Phys. Lett.85(2), 221-223 (2004).16. M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi, "Simulation of correlated diffusion of Si and B in thermally grown SiO2," J. Appl. Phys.96(10), 5513-5519 (2004).17. M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, K. Shiraishi, and U. Gosele, "Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity," Appl. Phys. Lett.84(6), 876-878 (2004).18. N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, and Y. Takahashi, "Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices," J. Appl. Phys.96(9), 5254-5266 (2004).

ナノ加工研究グループ

1.

L. F. Houlet, H. Yamaguchi, S. Miyashita, and Y. Hirayama, "InAs/AlGaSb piezoresistive cantilever for sub-angstrom scale displacement detection," Jpn. J. Appl. Phys. Part 2 - Lett.43(3B), L424-L426 (2004).2. R. Koch, A. K. Das, H. Yamaguchi, C. Pampuch, and A. Ney, "Perpendicular magnetic fields in cantilever beam magnetometry," J. Appl. Phys.96(5), 2773-2778 (2004).3. R. Koch, C. Pampuch, H. Yamaguchi, A. K. Das, A. Ney, L. Daweritz, and K. H. Ploog, "Magnetoelastic coupling of MnAs/GaAs(001) close to the phase transition," Phys. Rev. B70(9), 092406 (2004).4.

M. Nagase and H. Namatsu, "A method for assembling nano-electromechanical devices on microcantilevers using focused ion beam technology," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(7B), 4624-4628 (2004).5. K. Nakamatsu, K. Watanabe, K. Tone, T. Katase, W. Hattori, Y. Ochiai, T. Matsuo, M. Sasago, H. Namatsu, M. Komuro, and S. Matsui, "Bilayer resist method for room-temperature nanoimprint lithography," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(6B), 4050-4053 (2004).6. H. Namatsu, "The impact of supercritical fluoro-compounds on lithography use," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett.43(4A), L456-L459 (2004).7. M. S. M. Saifullah, D. J. Kang, K. R. V. Subramanian, M. E. Welland, K. Yamazaki, and K. Kurihara, "Electron beam nanolithography of beta-ketoester modified aluminum tri-sec-butoxide," J. Sol-Gel Sci. Technol.29(1), 5-10 (2004).8. H. Yamaguchi, K. Kanisawa, S. Miyashita, and Y. Hirayama, "InAs/GaAs (111)A heteroepitaxial systems," Physica E23(3-4), 285-292 (2004).9. H. Yamaguchi, S. Miyashita, and Y. Hirayama, "Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers," Appl. Surf. Sci.237(1-4), 649-653 (2004).10. H. Yamaguchi, S. Miyashita, and Y. Hirayama, "Piezoresistive cantilevers using InAs-based 2D heterostructures," Physica E24(1-2), 70-73 (2004).11. H. Yamaguchi, S. Miyashita, and Y. Hirayama, "Quantum-mechanical displacement sensing using InAs/AlGaSb micromechanical cantilevers," Physica E21(2-4), 1053-1056 (2004).12. H. Yamaguchi, Y. Tokura, S. Miyashia, and Y. Hirayama, "Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems," Phys. Rev. Lett.93(3), 036603 (2004).13. T. Yamaguchi and H. Namatsu, "Effect of developer molecular size on roughness of dissolution front in electron-beam resist," J. Vac. Sci. Technol. B22(3), 1037-1043 (2004).14. T. Yamaguchi and H. Namatsu, "Impact of developers on roughness of dissolution front in electron-beam resists," J. Photopolym. Sci. Technol.17(4), 557-565 (2004).15. T. Yamaguchi, K. Yamazaki, and H. Namatsu, "Influence of molecular weight of resist polymers on surface roughness and line-edge roughness," J. Vac. Sci. Technol. B22(6), 2604-2610 (2004).16. K. Yamazaki and H. Namatsu, "5-nm-order electron-beam lithography for nanodevice fabrication," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(6B), 3767-3771 (2004).17. K. Yamazaki and H. Namatsu, "Two-axis-of-rotation drive system in electron-beam lithography apparatus for nanotechnology applications," Microelectron. Eng.73-74, 85-89 (2004).18. K. Yamazaki, T. Yamaguchi, and H. Namatsu, "Three-dimensional nanofabrication with 10-nm resolution," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett.43(8B), L1111-L1113 (2004).

量子固体物性研究グループ

1.

D. G. Austing, S. Tarucha, K. Muraki, F. Ancilotto, M. Barranco, A. Emperador, R. Mayol, and M. Pi, "Integer filling factor phases in vertical diatomic artificial molecules," Physica E22(1-3), 502-505 (2004).2. T. Fujisawa, T. Hayashi, H. D. Cheong, Y. H. Jeong, and Y. Hirayama, "Rotation and phase-shift operations for a charge qubit in a double quantum dot," Physica E21(2-4), 1046-1052 (2004).3. T. Fujisawa, T. Hayashi, and Y. Hirayama, "Controlled decoherence of a charge qubit in a double quantum dot," J. Vac. Sci. Technol. B22(4), 2035-2038 (2004).4.

T. Fujisawa, T. Hayashi, Y. Hirayama, H. D. Cheong, and Y. H. Jeong, "Electron counting of single-electron tunneling current," Appl. Phys. Lett.84(13), 2343-2345 (2004).5. N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, and Y. Hirayama, "Ballistic transport in InSb quantum wells at high temperature," Physica E20(3-4), 251-254 (2004).6. N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, and Y. Hirayama, "Effect of temperature on ballistic transport in InSb quantum wells," Physica E21(2-4), 761-764 (2004).7. K. Hashimoto, T. Saku, and Y. Hirayama, "Nuclear-spin-related resistance enhancements observed over a wide range of magnetic fields," Phys. Rev. B69(15), 153306 (2004).8. T. Hatano, M. Stopa, W. Izumida, T. Yamaguchi, T. Ota, and S. Tarucha, "Gate-voltage dependence of inter dot coupling and Aharanov-Bohm oscillation in laterally coupled vertical double dot," Physica E22(1-3), 534-537 (2004).9. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong, and Y. Hirayama, "Coherent charge oscillation in a semiconductor double quantum dot," IEEE Trans. Nanotechnol.3(2), 300-303 (2004).10. T. Ito, K. Tsutsumida, K. Nakamura, Y. Kangawa, K. Shiraishi, A. Taguchi, and H. Kageshima, "Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4 x 4) surfaces," Appl. Surf. Sci.237(1-4), 194-199 (2004).11. S. W. Jung, T. Fujisawa, Y. Hirayama, and Y. H. Jeong, "Background charge fluctuation in a GaAs quantum dot device," Appl. Phys. Lett.85(5), 768-770 (2004).12. T. Kodera, W. G. van der Wiel, K. Ona, S. Sasaki, T. Fujisawa, and S. Tarucha, "High-frequency manipulation of few-electron double quantum dots - toward spin qubits," Physica E22(1-3), 518-521 (2004).13. N. Kumada, K. Tagashira, K. Iwata, A. Sawada, Z. F. Ezawa, K. Muraki, T. Saku, and Y. Hirayama, "Effects of in-plane magnetic fields on spin transitions in bilayer quantum Hall states," Physica E22(1-3), 36-39 (2004).14. N. Kumada, D. Terasawa, M. Morino, K. Tagashira, A. Sawada, Z. F. Ezawa, K. Muraki, Y. Hirayama, and T. Saku, "Phase diagrams of v=2 and v=(2)/(3) quantum Hall states in bilayer systems," Phys. Rev. B69(15), 155319 (2004).15. J. Lagoute, K. Kanisawa, and S. Folsch, "Manipulation and adsorption-site mapping of single pentacene molecules on Cu(111)," Phys. Rev. B70(24), 245415 (2004).16. K. Muraki, J. G. S. Lok, S. Kraus, W. Dietsche, K. von Klitzing, D. Schuh, M. Bichler, and W. Wegscheider, "Coulomb drag as a probe of the nature of compressible states in a magnetic field," Phys. Rev. Lett.92(24), 246801 (2004).17. K. Ono and S. Tarucha, "Nuclear-spin-induced oscillatory current in spin-blockaded quantum dots," Phys. Rev. Lett.92(25), 256803 (2004).18. K. Ono, K. Uchida, N. Miura, Y. Hirayama, K. Ohdaira, and Y. Shiraki, "Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure," Physica E21(2-4), 698-702 (2004).19. K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama, and Y. Horikoshi, "Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy," J. Vac. Sci. Technol. B22(4), 1746-1749 (2004).20. T. Ota, T. Hatano, K. Ono, S. Tarucha, H. Z. Song, Y. Nakata, T. Miyazawa, T. Ohshima, and N. Yokoyama, "Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots," Physica E22(1-3), 510-513 (2004).21. T. Ota, K. Ono, M. Stopa, T. Hatano, S. Tarucha, H. Z. Song, Y. Nakata, T. Miyazawa, T. Ohshima, and N. Yokoyama, "Single-dot spectroscopy via elastic single-electron tunneling through a pair of coupled quantum dots," Phys. Rev. Lett.93(6), 066801 (2004).22. M. Rontani, S. Amaha, K. Muraki, F. Manghi, E. Molinari, S. Tarucha, and D. G. Austing, "Molecular phases in coupled quantum dots," Phys. Rev. B69(8), 085327 (2004).23. S. Sasaki, S. Amaha, N. Asakawa, M. Eto, and S. Tarucha, "Enhanced Kondo effect via tuned orbital degeneracy in a spin 1/2 artificial atom," Phys. Rev. Lett.93(1), 017205 (2004).24. K. Suzuki, S. Miyashita, K. Takashina, and Y. Hirayama, "Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field," Physica E20(3-4), 232-235 (2004).25. K. Suzuki, K. Takashina, S. Miyashita, and Y. Hirayama, "Landau-level hybridization and the quantum Hall effect in InAs/(AlSb)/GaSb electron-hole systems," Phys. Rev. Lett.93(1), 016803 (2004).26. A. Taguchi, "Importance of the sp(2)-like orbital formation for stabilizing surface local structures," Physica E24(1-2), 153-156 (2004).27. A. Taguchi and K. Shiraishi, "First-principles investigations of GaAs(311)A surface reconstruction - failure of the electron counting model," Appl. Surf. Sci.237(1-4), 189-193 (2004).28. K. Takashina, A. Fujiwara, S. Horiguchi, Y. Takahashi, and Y. Hirayama, "Valley splitting control in SiO2/Si/SiO2 quantum wells in the quantum Hall regime," Phys. Rev. B69(16), 161304 (2004).29. K. Takashina, A. Fujiwara, Y. Takahashi, and Y. Hirayama, "Resistance spikes induced by gate-controlled valley-splitting in silicon," Int. J. Mod. Phys. B18(27-29), 3603-3608 (2004).30. K. Takashina, Y. Hirayama, A. Fujiwara, S. Horiguchi, and Y. Takahashi, "A silicon bi-layer system," Physica E22(1-3), 72-75 (2004).31. D. Terasawa, M. Morino, K. Nakada, S. Kozumi, A. Sawada, Z. F. Ezawa, N. Kumada, K. Muraki, T. Saku, and Y. Hirayama, "Simultaneous excitation of spins and pseudospins in the bilayer v=1 quantum Hall state," Physica E22(1-3), 52-55 (2004).32. D. Terasawa, K. Nakada, S. Kozumi, Z. F. Ezawa, A. Fukuda, A. Sawada, N. Kumada, K. Muraki, Y. Hirayama, and T. Saku, "Double magnetoresistance minima induced by the in-plane magnetic field for the v=1 double-layer quantum Hall state," Int. J. Mod. Phys. B18(27-29), 3709-3712 (2004).33. H. Yokoyama, T. Sato, K. Ono, Y. Hirayama, and S. Tarucha, "Tunable quantum dot resonator embedded in a quantum wire," Physica E21(2-4), 527-531 (2004).34. G. Yusa, K. Hashimoto, K. Muraki, T. Saku, and Y. Hirayama, "Self-sustaining resistance oscillations: Electron-nuclear spin coupling in mesoscopic quantum Hall devices," Phys. Rev. B69(16), 161302 (2004).35. G. Yusa, K. Muraki, T. Saku, and Y. Hirayama, "Intralayer backscattering in narrow GaAs/AlxGa1-xAs/GaAs bilayer channels," Phys. Rev. B69(8), 085323 (2004).

超伝導量子物理研究グループ

1.

P. Bertet, I. Chiorescu, K. Semba, C. J. P. M. Harmans, and J. E. Mooij, "Detection of a persistent-current qubit by resonant activation," Phys. Rev. B70(10), 100501 (2004).2. I. Chiorescu, P. Bertet, K. Semba, Y. Nakamura, C.J.P.M. Harmans, and J. E. Mooij, "Coherent dynamics of a flux qubit coupled to a harmonic oscillator," Nature431(7005), 159-162 (2004).3. F. Deppe, S. Saito, H. Tanaka, and H. Takayanagi, "Determination of the capacitance of nm scale Josephson junctions," J. Appl. Phys.95(5), 2607-2613 (2004).4.

T. Mukai and M. Yamashita, "Efficient rapid production of a Bose-Einstein condensate by overcoming serious three-body loss," Phys. Rev. A70(1), 013615 (2004).5. S. Saito, M. Thorwart, H. Tanaka, M. Ueda, H. Nakano, K. Semba, and H. Takayanagi, "Multiphoton transitions in a macroscopic quantum two-state system," Phys. Rev. Lett.93(3), 037001 (2004).6. F. Shimizu, "Scalable quantum computer with optical lattices," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(12), 8376-8382 (2004).

スピントロニクス研究グループ

1.

T. Akazaki, H. Yamaguchi, and H. Takayanagi, "Nonequilibrium transport of InAs/GaAs(111)A heterostructures coupled with superconducting Nb electrodes," Semicond. Sci. Technol.19(4), S182-S184 (2004).2. Y. Asari, K. Takeda, and H. Tamura, "Hund's first and second rules in spherical quantum dots (I) in the zero-magnetic field," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(7A), 4424-4433 (2004).3. D. G. Austing, S. Tarucha, H. Tamura, K. Muraki, F. Ancilotto, M. Barranco, A. Emperador, R. Mayol, and M. Pi, "Integer filling factor phases and isospin in vertical diatomic artificial molecules," Phys. Rev. B70(4), 045324 (2004).4.

J. Haruyama, K. Takazawa, S. Miyadai, A. Takeda, N. Hori, I. Takesue, Y. Kanda, T. Akazaki, and H. Takayanagi, "Supercurrent in diffusive multi-walled carbon nanotubes," Physica C408-10, 85-87 (2004).5. T. Koga, J. Nitta, and M. van Veenhuizen, "Ballistic spin interferometer using the Rashba effect," Phys. Rev. B70(16), 161302 (2004).6. Y. Lin, J. Nitta, T. Koga, and T. Akazaki, "Electron g factor in a gated InGaAs channel with double InAs-inserted wells," Physica E21(2-4), 656-660 (2004).7. F. E. Meijer, A. F. Morpurgo, T. M. Klapwijk, T. Koga, and J. Nitta, "Competition between spin-orbit interaction and Zeeman coupling in Rashba two-dimensional electron gases," Phys. Rev. B70(20), 210307 (2004).8. F. E. Meijer, A. F. Morpurgo, T. M. Klapwijk, T. Koga, and J. Nitta, "Statistical significance of the fine structure in the frequency spectrum of Aharonov-Bohm conductance oscillations," Phys. Rev. B69(3), 035308 (2004).9. F. E. Meijer, J. Nitta, T. Koga, A. F. Morpurgo, and T. M. Klapwijk, "Experiments on Aharonov-Bohm conductance oscillations: a statistical analysis of the averaged Fourier spectrum," Physica E22(1-3), 402-405 (2004).10. J. Nitta, Y. P. Lin, T. Koga, and T. Akazaki, "Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure," Physica E20(3-4), 429-432 (2004).11. A. Richter, M. Yamaguchi, T. Akazaki, H. Tamura, and H. Takayanagi, "Single-electron charging effects in a semiconductor quantum wire with side-coupled quantum dot," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(10), 7144-7149 (2004).12. P. V. Santos, J. Nitta, and K. H. Ploog, "Stern-Gerlach spin filter using surface acoustic waves," Solid State Commun.132(9), 631-634 (2004).13. Y. Sekine, J. Nitta, T. Koga, A. Oiwa, S. Yanagi, T. Slupinski, and H. Munekata, "Magnetization reversal process of submicrometer-scale Hall bars of ferromagnetic semiconductor p-In0.97Mn0.03As," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.43(4B), 2097-2100 (2004).14. M. Steiner, G. Meier, U. Merkt, and J. Nitta, "Magnetic transitions of permalloy rings in hybrid devices," Physica E24(1-2), 124-128 (2004).15. M. Steiner and J. Nitta, "Control of magnetization states in microstructured permalloy rings," Appl. Phys. Lett.84(6), 939-941 (2004).16. K. Shiraishi, H. Tamura, and H. Takayanagi, "Theoretical design of a semiconductor ferromagnet based on quantum dot superlattices," Physica E24(1-2), 107-110 (2004).17. I. Takesue, T. Akazaki, S. Miyadai, N. Kobayashi, A. Tokita, M. Nomura, J. Haruyama, and H. Takayanagi, "Multi-walled carbon nanotubes with NbN superconducting electrodes," Physica E24(1-2), 32-36 (2004).18. H. Tamura, K. Shiraishi, and H. Takayanagi, "Tunable exchange interaction in quantum dot devices," Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett.43(5B), L691-L693 (2004).

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