Density-of-states Imaging in Semiconductor Heterostructures

Density-of-states Imaging in Semiconductor Heterostructures
　

Kyoichi Suzuki¹, Kiyoshi Kanisawa¹, Simon Perraud^1,2, Camille Janer^1,3,
Kei Takashina¹, Toshimasa Fujisawa¹, and Yoshiro Hirayama^1,4
¹Physical Science Laboratory, ²CNRS, ³ESPCI, ⁴Tohoku University
　As semiconductor devices develop and become highly integrated with ultra fine processes, quantum mechanical effects in the devices dominate their characteristics. Local analysis of the wavefunctions becomes important for realizing precise device performance. In addition, new physical phenomena emerging from their nano-scale dimensions are expected. The scanning tunneling spectroscopy (STS) method, which measures the tunneling current characteristics using a scanning tunneling microscope (STM), allows us to investigate the electron density of states (DOS) with nanometer resolution as a function of the energy, corresponding to the squared wavefunctions. By scanning the probe, the spatial distribution of the DOS can be obtained.
　By performing STS on cleaved semiconductor heterostructure surfaces (Fig. 1), we have succeeded in imaging quantized subbands formed in a quantum well (Fig. 2) [1], interference of electron waves at an heterointerface (Fig.3) [2], and wavefunction coupling in a double quantum well [3]. This method can be easily applied to more complicated heterostructures allowing spatial wavefunction analysis in real devices.
[1] K. Suzuki, et al., Phys. Rev. Lett. 98 (2007) 136802.
[2] K. Suzuki, et al., Jpn. J. Appl. Phys. 46 (2007) 2618.
[3] K. Suzuki, et al., J. Cryst. Growth 301-302 (2007) 97.

Fig. 1.

Cleaving is performed under ultra-high vacuum (UHV) (<2x10^-10Torr) to obtain a clean flat surface. Then, the sample is loaded into the STM setup cooled down to 4.8 K without breaking UHV.

Fig. 2. DOS in an InAs/GaSb single quantum well. Spatial standing wave patterns corresponding to the confined subbands were observed.

　　

Fig. 3. DOS around an InAs/GaSb single heterointerface. Interference patterns due to the electrons incident on/reflected from the GaSb potential barrier were observed.

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