Publications 1999
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T. H. Oosterkamp, J. W. Janssen, L. P. Kouwenhoven, D. G. Austing, T. Honda, and S. Tarucha
Maximum-density droplet and charge redistribution in quantum dots at high magnetic fields
Phys. Rev. Lett. 82, 2931 (1999). [abstract]
D. G. Austing, S. Tarucha, P. C. Main, M. Henini, S. T. Stoddart, and L. Eaves
Multiple gated InAs dot ensembles
Appl. Phys. Lett 75, 671 (1999). [abstract]
D. G. Austing, S. Sasaki, S. Tarucha, S. M. Reimann, M. Koskinen, and M. Maninen
Ellipsoidal deformation of vertical quantum dots
Phys. Rev. B 60, 11514 (1999). [abstract]
K. Muraki and Y. Hirayama
Spin transition of a two-dimensional hole system in the fractional quantum Hall effect
Phys. Rev. B 59, 2502R (1999). [abstract]
A. Taguchi, K. Shiraishi, and T. Ito
Stable adsorption sites and potential energy surface of a Ga adatom on a GaAs(111)A surface
Phys. Rev. B 60, 11509 (1999). [abstract]
A. Taguchi and H. Kageshima
Diffusion and stability of oxygen in GaAs and AlAs
Phys. Rev. B 60, 5383 (1999). [abstract]
K. Muraki, T. Saku, Y. Hirayama, N. Kumada, A. Sawada, and Z. F. Ezawa
Interlayer charge transfer in bilayer quantum Hall states at various filling factors
Solid State Commun. 112, 625 (1999).
H. Yamaguchi, K. Honma, K. Kanisawa, and Y. Hirayama
Drastic improvement in the surface flatness properties by using GaAs (111)A substrates in molecular beam epitaxy
Jpn. J. Appl. Phys. 38, 635 (1999).
D. G. Austing, Y. Tokura, T. Honda, S. Tarucha, M. W. S. Danoesastro, J. W. Janssen. T. H. Oosterkamp, and L. P. Kouwenhoven
Several and many-electron artificial-atoms at filling factors between 2 and 1
Jpn. J. Appl. Phys. 38, 372 (1999).
N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi,
Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect
Jpn J. Appl. Phys. 38, L799 (1999).
N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi
Superior pinch-off characteristics at 400 C in AlGaN/GaN heterostructures field effect transistor
Jpn J. Appl. Phys. 38, L987 (1999).
Y. Tokura, D. G. Austing, and S. Tarucha
Single electron tunneling in two vertically coupled quantum dots
J. Phys. Cond. Matt. 11, 6023 (1999).
D. G. Austing, S. Sasaki, S. Tarucha, S. M. Reimann, M. Koskinen, and M. Maninen
Vertical quantum dots with elliptically deformed cross sections
Physica B 272, 68 (1999).
W. G. van der Wiel, T. Fujisawa, T.H. Oosterkamp, and L.P. Kouwenhoven
Microwave spectroscopy of a double quantum dot in the low and high power regime
Physica B 272, 31 (1999).
Y. Hirayama, K. Muraki, and T. Saku
High-quality two-dimensional electron gas at an inverted undoped heterointerface
Superlattices and Microstructures 25, 295 (1999).
N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi
Enhanced two-dimensional electron gas confinement effect on transport properties in AlGaN/InGaN/AlGaN double-heterostructures
Physica Status Solidi (b) 216, 727 (1999).
S. Tarucha, T. Fujisawa, K. Ono, D. G. Austing, T. H. Oosterkamp, w. G. van der Wiel, and L. P. Kouwenhoven
Elastic and inelastic single electron tunneling in coupled two dot system
Microelectron. Eng. 47, 101 (1999).
H. Yamaguchi and Y. Hirayama
Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (111)A substrate
J. Crystal Growth, 201/202, 778 (1999).
A. Taguchi, K. Shiraishi, and T. Ito
First-principles investigation of Ga adatom migration on a GaAs (111)A surface
J. Crystal Growth, 201/202, 778 (1999).
K. Shiraishi, T. Ito, Y. Y. Suzuki, H. Kageshima, K. Kanisawa, and H. Yamaguchi
Microscopic investigation of the surface phase transition on GaAs (001) surfaces
Surf. Sci. 433-435, 382 (1999).
S. M. Reimann, M. Koskinen, J. Kolehmainen, M. Maninen, D. G. Austing, and S. Tarucha
Electronic and magnetic structure of artificial atoms
Euro. Phys. JD9, 105 (1999).
T. H. Oosterkamp, W. G. van der Wiel, L. P. Kouwenhoven, D. G. Austing, T. Honda, and S. Tarucha
Electron ground states in a few-electron quantum dot
Festkoerper Probleme: Advances in Solid State Physics 38, 189 (1999).
Y. Hirayama, T. Saku, and K. Muraki
Two-dimensional-electron-gas metal-insulator phase diagram obtained for gate-controlled Corbino-disk structure
24th Int. Conf. on The Physics of Semiconductors (1999).
Y. Tokura, A. A. Odintsov, and S. Tarucha
Bragg reflections in a Tomonaga-Luttinger liquid
24th Int. Conf. on The Physics of Semiconductors (1999).
Y. Tokura, D. G. Austing, and S. Tarucha
Single electron tunneling in two vertically coupled quantum dots
24th Int. Conf. on The Physics of Semiconductors (1999).
W. G. van der Wiel, T. Fujisawa, S. Tarucha, T. H. Oosterkamp, R. Aguado, R. M. Schouten, and L. P. Kouwenhoven
Microwave spectroscopy on a double quantum dot
24th Int. Conf. on The Physics of Semiconductors (1999).
T. Fujisawa, T. H. Oosterkamp, W. G. van der Wiel, S. Tarucha, and L. P. Kouwenhoven
Photon Assisted Tunneling Spectroscopy in a Double Quantum Dot
Compound Semiconductors 1998, IOP Conf. Ser. 162, 493 (1999).
K. Suzuki, K. Saito, K. Muraki, and Y. Hirayama
Magnetophotoluminescence in n-and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures
Compound Semiconductors 1998, IOP Conf. Ser. 162, 155 (1999).
K. Tsubaki
Quantized magnetotransport through magnetic barrier systems
Compound Semiconductors 1998, IOP Conf. Ser. 162, 373 (1999).
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