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Publications —Topological Insulator

F. Couëdo, H. Irie, T. Akiho, K. Suzuki, K. Onomitsu, K. Muraki,

"Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system"

arXiv: 1902.05310 (submitted). [Journal page]

H. Irie, T. Akiho, F. Couedo, K. Suzuki, K. Onomitsu, and K. Muraki,

"Energy gap tuning and gate-controlled topological phase transition in InAs/InxGa1-xSb composite quantum wells"

Phys. Rev. Materials 4, 104201 (2020). [Journal page]

H. Irie, T. Akiho, F. Couedo, R. Ohana, K. Suzuki, K. Onomitsu, and K. Muraki,

"Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells"

Phys. Rev. B 101, 75433 (2020). [Journal page]

T. Akiho, F. Couëdo, H. Irie, K. Suzuki, K. Onomitsu and K. Muraki,

"Engineering quantum spin Hall insulators by strained-layer heterostructures"

Appl. Phys. Lett., 109, 192105 (2016). [Journal page]

F. Couëdo, H. Irie, K. Suzuki, K. Onomitsu and K. Muraki,

"Single-edge transport in an InAs/GaSb quantum spin Hall insulator"

Phys. Rev. B, 94, 035301 (2016). [Journal page]

K. Suzuki, Y. Harada, K. Onomitsu and K. Muraki,

"Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure"

Phys. Rev. B 91, 245309 (2015). [Journal page]

K. Suzuki, Y. Harada, K. Onomitsu and K. Muraki,

"Edge channel transport in the InAs/GaSb topological insulating phase"

Phys. Rev. B 87, 235311 (2013). [Journal page]

K. Suzuki, Y. Harada, F. Maeda, K. Onomitsu, T. Yamaguchi and K. Muraki,

"Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer"

Appl. Phys. Express 4, 125702 (2011). [Journal page]