Publications —Topological Insulator
"Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cry(BixSb1−x)2−yTe3 and Vy(BixSb1−x)2−yTe3 Films"
Phys. Status Solidi b 2400561 (2025). [Journal page]
"Time-resolved counterpropagating edge transport in the topological insulating phase"
Phys. Rev. Research 6, 043073 (2024). [Journal page]
"Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge"
Nano Letters 24, 14790 (2024). [Journal page]
"Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3"
Appl. Phys. Lett. 125, 083101 (2024). [Journal page]
"Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells"
Phys. Rev. Research 4, 033214 (2022). [Journal page]
"Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system"
arXiv: 1902.05310 (submitted). [Journal page]
"Energy gap tuning and gate-controlled topological phase transition in InAs/InxGa1-xSb composite quantum wells"
Phys. Rev. Materials 4, 104201 (2020). [Journal page]
"Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells"
Phys. Rev. B 101, 75433 (2020). [Journal page]
"Engineering quantum spin Hall insulators by strained-layer heterostructures"
Appl. Phys. Lett., 109, 192105 (2016). [Journal page]
"Single-edge transport in an InAs/GaSb quantum spin Hall insulator"
Phys. Rev. B, 94, 035301 (2016). [Journal page]
"Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure"
Phys. Rev. B 91, 245309 (2015). [Journal page]
"Edge channel transport in the InAs/GaSb topological insulating phase"
Phys. Rev. B 87, 235311 (2013). [Journal page]
"Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer"
Appl. Phys. Express 4, 125702 (2011). [Journal page]