Publications 2000
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S. Sasaki, S. De Franceschi, J. Elzerman, W. van der Wiel, M. Eto, S. Tarucha, and L. P. Kouwenhoven
Kondo effect in an integer-spin quantum dot
Nature 405, 764 (2000).
[abstract]
W. G. van der Wiel, S. De Franceschi, T. Fujisawa, J. M. Elzerman, S. Tarucha, and L. P. Kouwenhoven
The Kondo effect in the Unitary limit
Science 289, 2105 (2000).
[abstract]
S. Tarucha, D. G. Austing, Y. Tokura, W. G. van der Wiel, and L. P. Kouwenhoven
Direct Coulomb and exchange interaction in artificial atoms
Phys. Rev. Lett. 84, 2485 (2000).
[abstract]
T. Fujisawa and Y. Hirayama
Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique
Appl. Phys. Lett. 77, 543 (2000).
[abstract]
K. Kanisawa, H. Yamaguchi, and Y. Hirayama
Two-dimensional growth of InSb thin film on GaAs (111)A substrates
Appl. Phys. Lett. 76, 589 (2000). [abstract]
H. Kageshima, A. Taguchi, and K. Wada
Theoretical investigations of nitrogen-doping effect in vacancy aggregation processes in Si
Appl. Phys. Lett. 76, 3718 (2000).
[abstract]
A. Taguchi, K. Shiraishi, and T. Ito
First-principles study of the elemental process of the epitaxial growth on a GaAs(111)A surface
Phys. Rev. B 61, 12670 (2000).
[abstract]
A. Taguchi, T. Ohno, and T. Sasaki
Fluorine atoms in AlAs, GaAs, and InAs: Stable state, diffusion, and carrier passivation
Phys. Rev. B 62, 1821 (2000).
[abstract]
T. Fujisawa and Y. Hirayama
Transmission type rf single electron transistor operation of a semiconductor quantum dot
Jpn J. Appl. Phys. 39, 2338 (2000).
K. Muraki, N. Kumada, T. Saku, and Y. Hirayama
n+-GaAs back-gated double-quantum-well structures with full density control
Jpn. J. Appl. Phys. 39, 2444 (2000).
J. H. Roslund, K. Saito, K. Suzuki, H. Yamaguchi and Y. Hirayama
Electron and hole proximity effects in the InAs/AlSb/GaSb system
Jpn. J. Appl. Phys. 39, 2448 (2000).
A. Taguchi, K. Shiraishi, and T. Ito
Stable Microstructures on a GaAs (111)A surface: the Smallest Unit for Epitaxial Growth
Jpn. J. Appl. Phys. 39, 4270 (2000).
S. Nuttinck, K. Hashimoto, S. Miyashita, T. Saku, and Y. Hirayama
Quantum point contacts in a density-tunable two-dimensional electron gas
Jpn. J. Appl. Phys. 39, L655 (2000).
K. Tsubaki
Aharonov-Bohm oscillation in rings with Permalloy
Jpn. J. Appl. Phys. 40, 1620 (2001).
A. Taguchi and Y. Hirayama
Stable site and stable charge state of a fluorine atom in Si
Solid State Comm. 116, 595 (2000).
G. Tatara and Y. Tokura
Electronic pressure on ferromagnetic domain wall
Solid State Comm. 116, 533 (2000).
A. Kawaharazuka, T. Saku, Y. Hirayama, and Y. Horikoshi
Formation of a undoped heterostructure with a shallow channel depth
J. Appl. Phys. 87, 952 (2000).
N. Kumada, A. Sawada, Z. F. Ezawa, S. Nagahama, H. Azuhata, K. Muraki, T. Saku, and Y. Hirayama
Doubly enhanced Skyrmions in nu=2 bilayer quantum Hall states
J. Phys. Soc. Jpn. 69 (2000) 3178.
T. Fujisawa, W. G. van der Wiel, L. P. Kouwenhoven
Tunneling in a double quantum dot coupled to a bosonic environment
Physica E 7, 413 (2000).
Y. Tokura, S. Sasaki, D. G. Austing, and S. Tarucha
Single-electron tunneling through two vertically coupled quantum dots
Physica E 6, 676 (2000).
Z. F. Ezawa, A. Sawada, K. Muraki, and Y. Hirayama
Quantum coherence and Skyrmion textures in bilayer quantum Hall systems
Pysica E 6, 640 (2000).
T. Machida, S. Ishizuka, K. Muraki, Y. Hirayama, and S. Komiyama
Resistance fluctuations in integer quantum-Hall transitions
Physica E 6, 152 (2000).
H. Arimoto, N. Miura, Y. Hirayama, and T. Saku
Anomalous hysteretic phenomena in cyclotron resonance spectra of GaAs/AlGaAs quantum well under tilted magnetic fields of short pulse up to 150 T
Physica E 6, 191 (2000).
A. A. Odintsov and Y. Tokura
Contact Phenomena in carbon nanotubes
Physica B 284-288, 1752 (2000).
A. A. Odintsov and Y. Tokura
Contact phenomena and Mott transition in carbon nanotubes
J. Low Temp. Phys. 118, 509 (2000).
S. Tarucha, D. G. Austing, S. Sasaki, Y. Tokura, W. van der Wiel, and L. P. Kouwenhoven
Effects of Coulomb interactions on spin states in vertical semiconductor quantum dots
Appl. Phys. A 71, 367 (2000).
A. Taguchi, K. Shiraishi, and T. Ito
Self-surfactant effect of As on a GaAs(111)A surface
Appl. Surf. Sci. 162-163, 354 (2000).
J. H. Roslund, H. Yamaguchi, and Y. Hirayama
Electrical properties of InAs/AlSb/GaSb double quantum well structures
Inst. Phys. Conf. Ser. 166, 127 (2000).
A. Kawaharazuka, T. Saku, Y. Horikoshi, and Y. Hirayama
Channel depth dependent transport characteristics of a two-dimensional electron gas in an undoped GaAs/AlGaAs heterostructure
Inst. Phys. Conf. Ser. 166, 151 (2000).
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