Publication List(1999)

  1. Yoshikazu Homma, Paul Finne, Toshio Ogino, H. Noda, T. Urisu,
    "Aligned island formation using step-band networks on Si(111)",
    J. Appl. Phys. 86, 3083-3088 (1999).

  2. Yoshikazu Homma, Paul Finne and Toshio Ogino,
    "Aligned island formation using an array of step bands and holes on Si(111)",
    Appl. Phys. Lett.74, 815-817 (1999).

  3. Yoshikazu Homma and Paul Finne,
    "Steps on subliming Si(111) surfaces",
    J. Phys. Condensed Matter 11, 9879-9888 (1999).

  4. Yoshihiro Kobayashi, Koji Sumitomo, Kenji Shiraishi, Tuneo Urisu and Toshio Ogino,
    "Control of surface compostion on Ge/Si(001)2X1 surfaces by atomic hydrogen irradiation",
    Surf. Sci. 436, 9-14 (1999).

  5. Yoshihiro Kobayashi, Koji Sumitomo and Toshio Ogino,
    "Observation of Ge surface segregation during Si-MBE on Ge/Si(001) probed by Si-H/Ge-H surface vibrations",
    Surf. Sci. 427-428, 229-234 (1999).

  6. Kuniyil Prabhakaran and Toshio Ogino,
    "High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching",
    J. Vac. Sci. Technol. 17, 1346-1349 (1999).

  7. Kuniyil Prabhakaran, Koji Sumitono and Toshio Ogino,
    "Interaction of Co with SiGe epilayer grown on Si(100)",
    Surf. Sci. 421, 100-105 (1999).

  8. Kuniyil Prabhakaran, Koji Sumitono and Toshio Ogino,
    "Oxidation of cobalt pre-reacted SiGe epilayer grown on Si(100)",
    Surf. Sci. Lett. 429, 274-278 (1999).

  9. Koji Sumitomo, Yoshihiro Kobayashi, T. Ito and Toshio Ogino,
    "Ge segregation mechanism during Si/Ge multilayer growth",
    Thin Solid Films 357, 76-80 (1999).

  10. Hiroo Omi and Toshio Ogino,
    "Self-organization of Ge islands on high-index Si substrates",
    Phys. Rev. B59, 7521-7528 (1999).

  11. Paul Finne and Yoshikazu Homma,
    "Maskless Selective Area Molecular Beam Epitaxy of Semiconductors and Metals using Atomic Step Networks on Silicon",
    J. Cryst. Grownth 201/202, 604-609 (1999).

  12. Paul Finne and Yoshikazu Homma,
    "Island growth and surface roughness scaling of epitaxial GaAs on Si observed by in situ scanning electron microscopy",
    Phys. Rev. B59, 15240-15245 (1999).

  13. Paul Finne and Yoshikazu Homma,
    "Dynamics, interactions, and collisions of atomic steps on Si(111) in sublimation",
    Phys. Rev. B82, 2737-2740 (1999).

  14. Tomoaki Kawamura, Hiroki Hibino and Toshio Ogino,
    "Origin of reducing domain boundaries of Si(111)-7x7 during homoepitaxial growth",
    Jpn. J. Appl. Phys. 38, 1530-1533 (1999).

  15. Fumihiko Maeda and Toshio Watanabe,
    "Sb desorption from Sb/GaAs(001) and GaSb(001) analyzed by core-level photoelectron spectroscopy",
    J. Electron Spectro. 101-103, 293-298 (1999).

  16. Fumihiko Maeda and Yoshio Watanabe,
    "Sb induced reconstruction on Sb-terminated GaAs(001)",
    Phys. Rev. B60, 10652-10655 (1999).

  17. Satoru Suzuki, Fuminiko Maeda, Yoshio Watanabe and T.Ohno,
    "Work function changes of GaAs surfaces induced by Se treatment",
    Jpn. J. Appl. Phys. 38, 5847-5850 (1999).
  18. T. Kawamura, J-J. Delaunay, H. Takenaka, and Y. Watanabe,
    "Design of a VUV/soft x-ray ellipsometry system that uses laser produced plasma x-rays",
    Inst. Phys. Conf. Ser. No. 159 pp.609-612 (1999).
  19. Y. Watanabe, S. Heun, Th. Schmidt, and K. C. Prince,
    "Preliminary spectromicroscopic measurements of self-organized InAs nanocrystals by SPELEEM",
    Jpn. J. Appl. Phys. 38, Suppl. 38-1 556-559 (1999).
  20. F. Maeda and Y. Watanabe,
    "Sb desorption from Sb/GaAs(001) and GaSb(001) analyzed by core-level phtoelectron spectroscopy",
    Journalof Electron Spectroscopy and Related Phenomena, 101-103, pp.293-298 (1999).
  21. Y. Homma, H. Hibino, Y. Kunii and T. Ogino,
    "Transformation of artificial structures on silicon surfaces due to evaporation",
    Surf. Sci. 20, 859 (1999) (in Japanese),
  22. T. Ogino, H. Hibino and Y. Homma,
    "Kinetics and thermodynamics of surface steps on semiconductors",
    Critical Reviews in Solid State and Materials Sciences 24, 227 (1999).
  23. T. Ogino, H. Hibino, Y. Homma, Y. Kobayashi, K. Prabhakaran, K. Sumitomo and H. Omi,
    "Fabrication and integration of nanostructures on Si surfaces",
    Acc. Chem. Res. 32, 447 (1999).
  24. Y. Homma, H. Hibino and T. Ogino,
    "Sublimation of Si(111) surfaces observed by Ultrahigh vacuum scanning electron microscopy",
    Shinku 42, 79 (1999) (in Japanese).
  25. H. Yamaguchi, Y. Homma, K. Kanisawa and Y. Hirayama,
    "Drastic Improvement in Surface Flatness Properties by Using GaAs(111)A Substrates in Molecular Beam Epitaxy,
    Jpn. J. Appl. Phys. 38, 635-644 1999),
  26. S. Suzuki and T. Shodai,
    "Electronic structure and electrochemical properties of electrode material Li7-xMnN4",
    Solid State Ionics 116, pp. 1-9 (1999).
  27. Y.Kobayashi, K. Shiraishi, K. Sumitomo and T. Ogino,
    "Structural change on the surface of SiGe caused by absorbing and coming off from hydrogen".
    Surf. Sci. vol. 20, 696 (1999).
  28. K. Prabhakaran, K. Sumitomo and T. Ogino,
    "Interaction of Co with SiGe epilayer grown on Si(100)",
    Surf. Sci. 421 (1999) 100-105.
  29. K. Prabhakaran and T. Ogino,
    "Chemical bond manipulation for nanostructure integration wafer scale",
    Bulletin of Materials Sciences 1999 March issue.
  30. K. Prabhakaran, K. Sumitomo and T. Ogino,
    "Nano-interface engineering of Co/Ge/Si systems: Metal incorporation into Ge quantum dots and SiO2/Si structures",
    Thin Solid Films.
  31. K. Prabhakaran, Y. Maeda, Y. Watanabe and T. Ogino,
    "Thermal decomposition pathway of germanium and silicon oxides: Observation of a distinct difference",
    Applied Surf. Sci.
  32. K. Prabhakaran and T. Ogino,
    "Control of surface reactions on silicon: Spatial selectivity and pattern formation",
    MRSProc.
  33. K. Prabhakaran and T. Ogino,
    "Evolution of nanostructure fabrication from traditional surfacescience",
    Proc. of Conference, Hokkaido University, 1999 March.