Publications

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Publications in 2013

Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs K. Onomitsu, M. Mitsuhara, H. Yamamoto, and H. Yamaguchi Appl. Phys. Express 6, 111201 (2013).

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors M. Hiroki, Y. Oda, N. Watanabe, N. Maeda, H. Yokoyama, K. Kumakura, and H. Yamamoto J. Cryst. Growth, 38236 (2013).

Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy T. Akasaka, Y. Kobayashi, M. Kasu, and H. Yamamoto Appl. Phys. Express 6, 105501 (2013).

Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxides H. Yamamoto, Y. Krockenberger, and M. Naito J. Cryst. Growth, 378184 (2013).

Emerging superconductivity hidden beneath charge-transfer insulators Y. Krockenberger, H. Irie, O. Matsumoto, K. Yamagami, M. Mitsuhashi, A. Tsukada, M. Naito, and H. Yamamoto Scientific Reports, 3, 2235 (2013).

Ferromagnetic-induced component in piezoresistance of GaMnAs K. Onomitsu, I. Mahboob, H. Okamoto, Y. Krockenberger, and H. Yamaguchi Phys. Rev. B 87, 060410 (2013).

Superconductivity in Tungsten-Carbide Nanowires Deposited from the Mixtures of W(CO)(6) and C14H10 J. Dai, K. Onomitsu, R. Kometani, Y. Krockenberger, H. Yamaguchi, S. Ishihara, and S. Warisawa Jan. J. Appl. Phys., 52, 075001 (2013).

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/ GaN High Electron Mobility Transistors M. Hiroki, N. Watanabe, N. Maeda, H. Yokoyama, K. Kumakura, and H. Yamamoto Jan. J. Appl. Phys., 52, 04CF02 (2013).

Ferromagnetic-induced component in piezoresistance of GaMnAs K. Onomitsu, I. Mahboob, H. Okamoto, Y. Krockenberger, and H. Yamaguchi Phys. Rev. B 87, 060410 (2013).

Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2 H. Sato and M. Kasu Diam. Relat. Mat. 31, 47 (2013).

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Publications in 2012

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Y. Kobayashi, K. Kumakura, T. Akasaka, and T. Makimoto Nature 484, 223 (2012).

Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy Y. Krockenberger, S. Karimoto, H. Yamamoto, and K. Semba J. Appl. Phys. 112, 083920 (2012).

Mg doping for p-type AlInN lattice-matched to GaN Y. Taniyasu, J. F. Carlin, A. Castiglia, R. Butte, and N. Grandjean Appl. Phys. Lett. 101, 082113 (2012)

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface K. Hirama, Y. Taniyasu, and M. Kasu Jan. J. Appl. Phys., 51, 090114 (2012).

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3 Passivation Layer K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu Jan. J. Appl. Phys., 51, 090112 (2012).

Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto ADVANCED MATERIALS, 24, 4296 (2012).

Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3 passivation K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu IEEE Electron Dev. Lett. 33, 1111 (2012).

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN T. Makimoto, K. Kumakura, Y. Kobayashi, T. Akasaka, and H. Yamamoto Appl. Phys. Express 5, 072102 (2012).

Unconventional transport and superconducting properties in electron-doped cuprates Y. Krockenberger, H. Yamamoto, M. Mitsuhashi, and M. Naito Phys. Rev. B 85, 205304 (2012).

Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr0.90La0.10CuO2 Thin Films Y. Krockenberger, K. Sakuma, and H. Yamamoto Appl. Phys. Express 5, 043101 (2012).

Electronic properties of H-terminated diamond during NO2 and O-3 adsorption and desorption H. Sato and M. Kasu Diam. Relat. Mat. 24, 99 (2012).

Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic- Layer-Deposited Al2O3 Overlayer and its Electric Properties M. Kasu, H. Sato, and K. Hirama Appl. Phys. Express 5, 025701 (2012).

RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond K. Hirama, M. Kasu, and Y. Taniyasu IEEE Electron Dev. Lett. 33, 513 (2012).

Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate K. Hirama, M. Kasu, and Y. Taniyasu Jan. J. Appl. Phys., 51, 01AG09 (2012).

Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4 Y. Krockenberger, H. Yamamoto, M. Mitsuhashi, and M. Naito Jan. J. Appl. Phys., 51, 010106 (2012).

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Publications in 2011

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices Y. Taniyasu and M. Kasu Appl. Phys. Lett. 99, 251112 (2011)

Origin of exciton emissions from an AlN p-n junction light-emitting diode Y. Taniyasu and M. Kasu Appl. Phys. Lett. 98, 131910 (2011)

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single- crystal diamond (111) substrates by metalorganic vapor-phase epitaxy K. Hirama, Y. Taniyasu, and M. Kasu Appl. Phys. Lett. 98, 162112 (2011)

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes K. Hirama, Y. Taniyasu, and M. Kasu Appl. Phys. Lett. 98, 011908 (2011)

Growth of infinite-layer (Sr, Nd)CuO(2) films by MBE Y. Krockenberger, and H. Yamamoto Physica C-superconductivity And Its Applications 471, 185 (2011)

Molecular beam epitaxy of superconducting Pr2CuO4 films H. Yamamoto, O. Matsumoto, Y. Krockenberger, K. Yamagami, and M. Naito Solid State Commun. 151, 771 (2011)

RE dependence of superconductivity in parent T '-RE(2)CuO(4) A. Ikeda, O. Matsumoto, H. Yamamoto, T. Manabe, and M. Naito Physica C-superconductivity And Its Applications 471, 686 (2011)

Molecular beam epitaxy of superconducting Pr2CuO4 films K. Kamiya, Y. Ebihara, K. Shiraishi, and M. Kasu Appl. Phys. Lett. 99, 151108 (2011)

Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond X. B. Zhu, S. Saito, A. Kemp, K. Kakuyanagi, S. Karimoto, H. Nakano, W. J. Munro, Y. Tokura, M. S. Everitt, K. Nemoto, M. Kasu, N. Mizuochi, and K. Semba Nature 478, 221 (2011)

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Publications in 2010

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy T. Akasaka, Y. Kobayashi and M. Kasu Appl. Phys. Lett. 97, 141902 （2010）

Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy T. Akasaka, Y. Kobayashi, and M. Kasu Appl. Phys. Express. 3, 075602 (2010)

Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001) K. Hirama, Y. Taniyasu, and M. Kasu Jpn. J. Appl. Phys. 49, 04DH01 (2010)

Heterostructure growth of a single-crystal hexagonal AlN(0001) layer on cubic diamond (111) surface K. Hirama, Y. Taniyasu, and M. Kasu J. Appl. Phys. 108, 013528 (2010)

Arsenic-doped n-type diamond grown by microwave-assisted plasma chemical vapor deposition M. Kasu, and M. Kubovic Jpn. J. Appl. Phys. 49, 110209 (2010)

Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces M. Kubovic, M. Kasu, and H. Kageshima Appl. Phys. Lett. 96, 052101 (2010)

Enhancement and stabilization of hole concentration of hydrogen-terminated diamond surface using ozone adsorbates M. Kubovic and M. Kasu Jpn. J.. Appl. Phys. 49, 110208 (2010)

Electronic and surface properties of H-terminated diamond surface affected by NO2 gas M. Kubovic, M. Kasu, H. Kageshima and F. Maeda Diam. Relat. Mat. 19, 889-893 (2010)

Generic phase diagram of Nd2-xCexCuO4 O. Matsumoto, A. Tsukada, H. Yamamoto, T. Manabe, and M. Naito Physica C. 470, S101-S103 (2010)

Material characterization of superconducting T '-Nd2CuO4 films synthesized by metal organic decomposition O. Matsumoto, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito Physica C. 470, 1029-1032 (2010)

Raman light scattering study and microstructural analysis of epitaxial films of the electron- doped superconductor La2-xCexCuO4 M. Rahlenbeck, M. Wagenknecht, A. Tsukada, D. Koelle, R. Kleiner, B. Keimer, and C. Ulrich Euro. Phys. J. B 75, 461-467 (2010)

Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A- plane growth orientation Y. Taniyasu and M. Kasu Appl. Phys. Lett. 96, 221110 (2010)

High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors K. Ueda and M. Kasu Jpn. J. Appl. Phys. 49, 04DF16 (2010)

Preparation of superconducting parent compounds T-RE2CuO4 by molecular beam epitaxy H. Yamamoto, A. Tsukada, O. Matsumoto, and M. Naito Physica C. 470, S88-S89 (2010)

MBE growth and properties of T '-La2CuO4 thin films H. Yamamoto, O. Matsumoto, A. Tsukada, and M. Naito Physica C. 470, 1025-1028 (2010)

Epitaxial Heusler alloy Co2FeSi films on Si(111) substrates grown by molecular beam epitaxy M. Zander, J. Herfort, K. Kumakura, H. P. Scohnherr, and A. Trampert J. Phys. D-Appl. Phys. 43, 305004 (2010)

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Publications in 2009

Identification of etch-pit crystallographic faces induced on diamond surface by H2/O2 etching plasma treatment J. Achard, F. Silva, O. Brinza, X. Bonnin, V. Lille, R. Issaoui, M. Kasu, and A. Gicquel Appl. Phys. Lett. 206, 1949-1954 (2009)

Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy T. Akasaka, Y. Kobayashi, and M. Kasu Appl. Phys. Express. 2, 091002 (2009)

Structural and electrical properties of H-terminated diamond field-effect transistor M. Kubovic, M. Kasu, Y. Yamauchi, K. Ueda, and H. Kageshima Diam. Relat. Mat. 18, 796-799 (2009)

SImprovement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere M. Kubovic and M. Kasu Appl. Phys. Express. 2, 086502 (2009)

High-temperature characteristics up to 590 degrees C of a pnp AlGaN/GaN heterojunction bipolar transistor Toshiki Makimoto and Kazuhide Kumakura Appl. Phys. Lett. 94, 103502 （2009）

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu and M. Kasu Appl. Phys. Lett. 95, 031903 (2009)

Reduction dependence of superconductivity in the end-member T ' cuprates O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito Physica C 469, 940-943 (2009)

Generic phase diagram of "electron-doped" T ' cuprates O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito Physica C 469, 924-927 (2009)

Synthesis and properties of superconducting T-'-R2CuO4 (R=Pr, Nd, Sm, Eu, Gd) O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito Phy. Rev. B 79, 100508 (2009)

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors A. Nishikawa, K. Kumakura, M. Kasu, and T. Makimoto J. Cryst. Growth.311, 3000-3002 (2009)

Lattice Instability in High-Temperature Superconducting Cuprates: Polarons Probed by EXAFS H. Oyanagi, C. Zhang, A. Tsukada, and M. Naito J. Supercond. Novel Magn. 22, 131 (2009)

MOVPE growth of single-crystal hexagonal AlN on cubic diamond Y. Taniyasu and M. Kasu J. Cryst. Growth.311, 2825-2830 (2009)

Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate C. L. Tsai, Y. Kobayashi, T. Akasaka, and M. Kasu J. Cryst. Growth.311, 3054-3057 (2009)

Beryllium-doped single-crystal diamond grown by microwave plasma CVD K. Ueda, and M. Kasu Diam. Relat. Mat. 18, 121 (2009)

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Publications in 2008

Anisotropic in-plane strains in nonpolar AlN and AlGaN (1120) films grown on SiC (1120) substrates T. Akasaka, Y. Kobayashi and M. Kasu Appl. Phys. Lett. 93, 161908 (2008)

RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination M. Kasu, K. Ueda, H. Kageshima and Y. Yamauchi IEICE Trans. Electron. E91C (7), 1042 (2008)

Gate interfacial layer in hydrogen-terminated diamond field-effect transistors Kasu, K. Ueda, H. Kageshima and Y. Yamauchi Diam. Relat. Mat. 17, 741 (2008)

High performance pnp AlGaN/GaN heterojunction bipolar transistors on GaN substrates K. Kumakura and T. Makimoto Appl. Phys. Lett. 92, 153509 (2008)

Carrier transport mechanisms of Pnp AlGaN/GaN heterojunction bipolar transistors K. Kumakura and T. Makimoto Appl. Phys. Lett. 92, 093504 (2008)

High-temperature characteristics of AlxGa1-xN-based vertical conducting A. Nishikawa, K. Kumakura, M. Kasu and T. Makimoto Jpn. J. Appl. Phys. 47, 2838 (2008)

Thick diamond layers angled by polishing to reveal defect and impurity depth profiles A. Tallaire, M. Kasu and K. Ueda Diam. Relat. Mat. 17, 506 (2008)

Origin of growth defects in CVD diamond epitaxial films A. Tallaire, M. Kasu, K. Ueda and I. Makimoto Diam. Relat. Mat. 17, 60 (2008)

Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes Y. Taniyasu and M. Kasu Diam. Relat. Mat. 17, 1273 (2008)

High-pressure and high-temperature annealing effects of boron-implanted diamond K. Ueda and M. Kasu Diam. Relat. Mat. 17, 502 (2008)

High-pressure and high-temperature annealing of diamond ion-implanted with various elements K. Ueda and M. Kasu Diam. Relat. Mat. 17, 1269 (2008)

Superconductivity in undoped T’-RE2CuO4 with Tc over 30 K O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe, M. Naito Physica C 468, 1148 (2008)

Undoped cuprate superconductors ? band superconductors or oxygen-doped Mott-Hubbard superconductors? M Naito, O Matsumoto, A Utsuki, A Tsukada, H Yamamoto and T Manabe J. Phys.: CS 108, 012037 (2008)

Epitaxial Growth of Superconducting Eu2-xCexCuO4 Thin Films Y. Krockenberger, J. Kurian, M. Naito and L. Alff Jpn. J. Appl. Phys. 47, 6307 (2008)

Superconductivity phase diagrams for the electron-doped cuprates R2-xCexCuO4 (R=La, Pr, Nd, Sm, and Eu) Y. Krockenberger, J. Kurian, A. Winkler, A. Tsukada, M. Naito and L. Alff Phys. Rev. B 77, 060505 (2008)

Local structure study of T ' cuprate superconductors H. Oyanagi, A. Tsukada and M. Naito J. Phys. Chem. Solids 69, 2307 (2008)

Enhanced superconductivity by reducing magnetism in strained La2-xSrxCuO4 films H. Sato Physica C 468, 2366 (2008)

Thickness dependence of superconductivity and resistivity in La1.85Sr0.15CuO4 films H. Sato Physica C 468, 991 (2008)

Phase diagram of the electron-doped La2-xCexCuO4 cuprate superconductor from Andreev bound states at grain boundary junctions M. Wagenknecht, D. Koelle, R. Kleiner, S. Graser, N. Schopohl, B. Chesca, A. Tsukada, S. T. B. Goennenwein and R. Gross Phys. Rev. Lett. 100 (22), 227001 (2008)

Magneto-optical observation of magnetic flux in patterned MgB2 films T. Ishibashi, T. Kawata, A. Tsukada, H. Shibata, M. Naito and K. Sato Physica C 468 (15-20), 1313 (2008)

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Publications in 2007

Terahertz mixing in MgB2 microbolometers S. Cherednichenko, V. Drakinskiy, K. Ueda and M. Naito Appl. Phys. Lett. 90 2, 023507-1 (2007)

Threading dislocations in heteroepitaxial AIN layer grown by MOVPE on SiC (0001) substrate Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto J. Cryst. Growth 298, 310 (2007)

Cathodeluminescence, photoluminescence, and reflectance study of an aluminum nitride layer grown on silicon carbide substrate G.i M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu and T. Makimoto J. Appl. Phys. 101, 023511 (2007)

Low-resistance graded AIGaN buffer layers for vertical conducting devices on n-SiC substrates A. Nishikawa, K. Kumamura, T. Akasaka and T. Makimoto J. Cryst. Grownth 298, 819 (2007)

BGaN micro-islands as movel buffers for growth of high-quality GaN on sapphire T. Akasaka, Y. Kobayashi and T. Makimoto J. Cryst. Growth 298, 320 (2007)

High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond Kenji Ueda, Makoto Kasu, and Toshiki Makimoto Appl. Phys. Lett. 90 12, 122102 (2007)

Interface Microstructure of MgB2/AI-AIOx/MgB2 Josephson Junctions Studied by Cross- Sectional Transmission Electron Microscopy Kenji Ueda, Shiro Saito, Kouichi Semba, Toshiki Makimoto, and Michio Naito Jpn. J. Appl. Phys. 46 12, L271 (2007)

RF gate capacitance-voltage characteristics of asubmicron-long-gate diamond field-effect transistors with hydrogen surface termination M. Kasu, K. Ueda, Y. Yamauchi and T. Makimoto Appl. Phys. Lett. 90 3, 043509 (2007)

AlN Light-emitting Diodes Y. Taniyasu, M. Kasu and T. Makimoto Modern Wide Bandgap Semiconductors and Devices Springer- Verlag, 152 (2007)

AlN p-n Junction UV-LEDs Y. Taniyasu, M. Kasu and T. Makimoto 3rd Asia-Pasific WOrkshop on Widegap Semiconductor, 57 (2007)

Low on resistance of GaN p-i-n vertical conducting diodes grownon 4H-SiC substrate A. Nishikawa, K. Kumamura, T. Makimoto Physica Status Solidi 4 7, 2662 (2007)

High critical electric field exceeding 8 MV/cm measured using AIGaN p-i-n Vertical conducting diode on n-SiC substrate Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto J. J. Appl. Phys 46 4B, 2316 (2007)

Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto Appl. Phys. Lett. 91 (2007) 133514

Radiation nad polarization properties of free-exciton emission from AIN (0001) surface Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto Appl. Phys. Lett. 90 26, 261911 (2007)

Diamond-based RF power transistors: Fundamentals and applications M. Kasu, K. Ueda, A. Tallaire, Y. Yamauchi, and T. Makimoto Diamond Relat. Matel. 16 (2007) 1010

Nonpolar AlBN (1120) and (1100) films grown on SiC substrates T. Akasaka, Y. Kobayashi, and Toshiki Makimoto Appl. Phys. Lett. 91, 041914 (2007)

世界最短波長210nmの遠紫外発光ダイオード Y. Taniyasu, M. Kasu and T. Makimoto 技術ジャーナル 19 2, 64 (2007)

深紫外光源のための窒化物半導体の開発 T.Makimoto, Y. Taniyasu, M. Kasu, Y. Kobayashi and T. Akasaka 応用物理　76　5, 509 (2007)

AIN遠紫外発光ダイオードの現状と課題 Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto 化合物半導体の最新技術 大全集 229 （2007）

AIN deep-ultrabiolet light-emitting diodes Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto 化学と工業 60 8, 783 (2007)

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Publications in 2006

AIN pin light-emitting diode with a wavelength of 210 nm Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto Nature 441, 325 (2006)

Growth of Nitride Semiconductors and Its Application to Heterojunction Bipolar Transistors Toshiki Makimoto and Kazuhide Kumakura Electronics and Communications in Japan 89, 20　（2006）

Low-temperature growth of of MgB2 thin films with Tc above 38 K Kenji Ueda and Toshiki Makimoto J. J. Appl. Phys 45, 5738 (2006)

Diamond FET on high-quality polycrystalline diamond with fT of 45 GHz and fmax of > 120 GHz K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook and S. E. Coe IEEE Electron Device Lett. 27, 570 (2006)

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates Atsushi Nishikawa, Kazuhide Kumakura, Tetuya Akasaka and Toshiki Makimoto Appl. Phys. Lett. 88, 173508 (2006)

High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films Kenji Ueda, Makoto Kasu, Alexasnder Tallaire, Toshiki Makimoto Diamond and Related Materials 15, 1789 (2006).

Characterization of high-quality polycrystalline diamond and its high FET performance K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook and S. E. Coe Dia. Rel. Mater. 15, 1954 (2006)

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers Tetuya Akasaka, Hideki Goto, Yasuyuki Kobayashi, Hidetoshi Nakano and Toshiki Makimoto Appl. Phys. Lett. 89, 101110 (2006).

High breakdown with low on-state resistance of p-InGaN/n-GaN vertical conducting diode on n -GaN substrate Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto Appl. Phys. Lett. 89, 153509 (2006).

AIN deep-UV LEDs with a wavelength of 210nm. Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto 6th Akasaki Research Center Symposium, 27 (2006).

Increased electron mobility in n-type Si-doped AIN reducing dislocation density Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto Appl. Phys. Lett. 89, 182112 (2006).

Aluminum nitraide deep-ultraviolet light-emitting diodes Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto Technical Review 4, 54 (2006)

Three-dimentional superconductivity and vortex glass transition in La1.87Y0.13CuO4 Hyun-Sook Lee, Heon-Jung Kim, Hyun-Jung Kim, Myung-Hwa Jung, Younghun Jo, Sung-IK Lee, Akio Tsukada and Michio Naito Physica B Condensed Matter 378, 447 (2006)

Charge transfer gap for T'-RE2CuO4 and T-La2CuO4 as estimated from Madelung potential calculations T. Tsukada, H. Shibata, M. Noda, H. Yamamoto and M. Naito Physica C Superconductivity 445, 94 (2006)

Doping of Ge in T-La2CuO4 : Rigorous test for electron-hole symmetry for high-Tc superconductivity A. Tsukada, H. Yamamoto and M. Naito Physical. Rev. B 74, 174515 (2006)

Critical electric fields of AIGaN-based vertical conducting dioddes on n-Sic substrates Atsushi Nishikawa, Kazuhide Kumakura, Tetuya Akasaka and Toshiki Makimoto Superlattices and Microstructures 40, 332 (2006)

High RF Output Power for H-terminated Diamond FETs M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki and T. Makimoto Diamond and Related Materials 15 4-8, 783 (2006)

Diamond RF Power Transistors: Present Status and Prospects M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki and T. Makimoto Materials Congress 2006 1 1, 35 (2006)

Influence of HPHT Diamond Defects on CVD Homoelitaxial Diamond Growth Alexander Tallaire, M. Kasu, K. Ueda and T. Makimoto MRS Meeting 2007 J17.2, 256 (2006)

Improved Diamond FET Characteristics by H2/02 Plasma Tretreatments of HPHT Diamond Substrate Alexander Tallaire, M. Kasu, K. Ueda, Y. Yamauchi and T. Makimoto MRS Meeting 2006 1, 243 (2006)

Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-8 Thin Films Shin-ichi Karimoto, Hisashi Sato and Toshiki Makimoto J. J. Appl. Phys 45, L419 (2006)

Growth of Boron Nitride on 6h-Sic Substrate by Flow-rate Modulation Epitaxy Yasuyuki Kobayashi and Toshiki Makimoto Jpn. J. Appi. Phys. 45 4B, 3519 (2006)

Growth of GaN on sapphire substrates using nobel butter layers of ECR-plasma-sputterd Al2O3 /graded-AION/AIN/Al2O3 Kazuhide Kumakura and Toshiki Makimoto J. Crystal Growth 292, 155 (2006)

p-InGaN/n-GaN Vertical Conducting Diodes on n+-Sic Substrate for High Power Electronic Device Applications Atsushi Nishikawa, Kazuhide Kumakura, Tetuya Akasaka and Toshiki Makimoto J. J. Appl. Phys 45, 3387 (2006)

Deep-ultraviolet aluminum nitride LED with a wavelength of 210 nm Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto オプトロニクス　25, 127 (2006).

遠赤外ＬＥＤ技術の最新動向 Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto オプトニューズ 5, 10 (2006)

The highest oritical electric field among the semiconductors -First determination of the critical electric field of AIGaN- Atsushi Nishikawa and Toshiki Makimoto 日経ナノビジネス 41, 21 (2006)

窒化アルミニウムで世界最短波長210nmの遠紫外発光ダイオードの動作に成功 Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto セラミックス 41 9, 769 (2006)

SiC基板上に作製した窒化物半導体デバイスの現状と将来 牧本　俊樹 光技術コンタクト 44 12, 29 (2006)

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