NTT Basic Research Laboratories

Thin-Film Materials Research Group


Publications




Publications in 2013

Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in
GaNAs
K. Onomitsu, M. Mitsuhara, H. Yamamoto, and H. Yamaguchi
Appl. Phys. Express 6, 111201 (2013).

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride
semiconductors
M. Hiroki, Y. Oda, N. Watanabe, N. Maeda, H. Yokoyama, K. Kumakura, and H.
Yamamoto

J. Cryst. Growth, 38236 (2013).

Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in
Selective-Area Metalorganic Vapor Phase Epitaxy
T. Akasaka, Y. Kobayashi, M. Kasu, and H. Yamamoto
Appl. Phys. Express 6, 105501 (2013).

Multi-source MBE with high-precision rate control system as a synthesis method sui generis
for multi-cation metal oxides
H. Yamamoto, Y. Krockenberger, and M. Naito
J. Cryst. Growth, 378184 (2013).

Emerging superconductivity hidden beneath charge-transfer insulators
Y. Krockenberger, H. Irie, O. Matsumoto, K. Yamagami, M. Mitsuhashi, A. Tsukada, M.
Naito, and H. Yamamoto

Scientific Reports, 3, 2235 (2013).

Ferromagnetic-induced component in piezoresistance of GaMnAs
K. Onomitsu, I. Mahboob, H. Okamoto, Y. Krockenberger, and H. Yamaguchi
Phys. Rev. B 87, 060410 (2013).

Superconductivity in Tungsten-Carbide Nanowires Deposited from the Mixtures of W(CO)(6)
and C14H10
J. Dai, K. Onomitsu, R. Kometani, Y. Krockenberger, H. Yamaguchi, S. Ishihara, and
S. Warisawa

Jan. J. Appl. Phys., 52, 075001 (2013).

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/
GaN High Electron Mobility Transistors
M. Hiroki, N. Watanabe, N. Maeda, H. Yokoyama, K. Kumakura, and H. Yamamoto
Jan. J. Appl. Phys., 52, 04CF02 (2013).

Ferromagnetic-induced component in piezoresistance of GaMnAs
K. Onomitsu, I. Mahboob, H. Okamoto, Y. Krockenberger, and H. Yamaguchi
Phys. Rev. B 87, 060410 (2013).

Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface
orientations obtained by exposure to highly concentrated NO2
H. Sato and M. Kasu
Diam. Relat. Mat. 31, 47 (2013).




Publications in 2012

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Y. Kobayashi, K. Kumakura, T. Akasaka, and T. Makimoto
Nature 484, 223 (2012).

Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy
Y. Krockenberger, S. Karimoto, H. Yamamoto, and K. Semba
J. Appl. Phys. 112, 083920 (2012).

Mg doping for p-type AlInN lattice-matched to GaN
Y. Taniyasu, J. F. Carlin, A. Castiglia, R. Butte, and N. Grandjean
Appl. Phys. Lett. 101, 082113 (2012)

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure
on Diamond (111) Surface
K. Hirama, Y. Taniyasu, and M. Kasu
Jan. J. Appl. Phys., 51, 090114 (2012).

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density
by Al2O3 Passivation Layer
K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu
Jan. J. Appl. Phys., 51, 090112 (2012).

Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on
Step-Free GaN Surface
T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
ADVANCED MATERIALS, 24, 4296 (2012).

Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3
passivation
K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu
IEEE Electron Dev. Lett. 33, 1111 (2012).

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate
by a Mechanical Transfer Method Using BN
T. Makimoto, K. Kumakura, Y. Kobayashi, T. Akasaka, and H. Yamamoto
Appl. Phys. Express 5, 072102 (2012).

Unconventional transport and superconducting properties in electron-doped cuprates
Y. Krockenberger, H. Yamamoto, M. Mitsuhashi, and M. Naito
Phys. Rev. B 85, 205304 (2012).

Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr0.90La0.10CuO2 Thin
Films
Y. Krockenberger, K. Sakuma, and H. Yamamoto
Appl. Phys. Express 5, 043101 (2012).

Electronic properties of H-terminated diamond during NO2 and O-3 adsorption and desorption
H. Sato and M. Kasu
Diam. Relat. Mat. 24, 99 (2012).

Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-
Layer-Deposited Al2O3 Overlayer and its Electric Properties
M. Kasu, H. Sato, and K. Hirama
Appl. Phys. Express 5, 025701 (2012).

RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond
K. Hirama, M. Kasu, and Y. Taniyasu
IEEE Electron Dev. Lett. 33, 513 (2012).

Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond
Substrate
K. Hirama, M. Kasu, and Y. Taniyasu
Jan. J. Appl. Phys., 51, 01AG09 (2012).

Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
Y. Krockenberger, H. Yamamoto, M. Mitsuhashi, and M. Naito
Jan. J. Appl. Phys., 51, 010106 (2012).




Publications in 2011

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period
superlattices
Y. Taniyasu and M. Kasu
Appl. Phys. Lett. 99, 251112 (2011)

Origin of exciton emissions from an AlN p-n junction light-emitting diode
Y. Taniyasu and M. Kasu
Appl. Phys. Lett. 98, 131910 (2011)

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-
crystal diamond (111) substrates by metalorganic vapor-phase epitaxy
K. Hirama, Y. Taniyasu, and M. Kasu
Appl. Phys. Lett. 98, 162112 (2011)

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN
(0001)/p-type diamond (111) heterojunction diodes
K. Hirama, Y. Taniyasu, and M. Kasu
Appl. Phys. Lett. 98, 011908 (2011)

Growth of infinite-layer (Sr, Nd)CuO(2) films by MBE
Y. Krockenberger, and H. Yamamoto
Physica C-superconductivity And Its Applications 471, 185 (2011)

Molecular beam epitaxy of superconducting Pr2CuO4 films
H. Yamamoto, O. Matsumoto, Y. Krockenberger, K. Yamagami, and M. Naito
Solid State Commun. 151, 771 (2011)

RE dependence of superconductivity in parent T '-RE(2)CuO(4)
A. Ikeda, O. Matsumoto, H. Yamamoto, T. Manabe, and M. Naito
Physica C-superconductivity And Its Applications 471, 686 (2011)

Molecular beam epitaxy of superconducting Pr2CuO4 films
K. Kamiya, Y. Ebihara, K. Shiraishi, and M. Kasu
Appl. Phys. Lett. 99, 151108 (2011)

Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond
X. B. Zhu, S. Saito, A. Kemp, K. Kakuyanagi, S. Karimoto, H. Nakano, W. J. Munro,
Y. Tokura, M. S. Everitt, K. Nemoto, M. Kasu, N. Mizuochi, and K. Semba

Nature 478, 221 (2011)




Publications in 2010

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy
T. Akasaka, Y. Kobayashi and M. Kasu
Appl. Phys. Lett. 97, 141902 (2010)

Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic
Vapor Phase Epitaxy
T. Akasaka, Y. Kobayashi, and M. Kasu
Appl. Phys. Express. 3, 075602 (2010)

Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
K. Hirama, Y. Taniyasu, and M. Kasu
Jpn. J. Appl. Phys. 49, 04DH01 (2010)

Heterostructure growth of a single-crystal hexagonal AlN(0001) layer on cubic diamond (111)
surface
K. Hirama, Y. Taniyasu, and M. Kasu
J. Appl. Phys. 108, 013528 (2010)

Arsenic-doped n-type diamond grown by microwave-assisted plasma chemical vapor deposition
M. Kasu, and M. Kubovic
Jpn. J. Appl. Phys. 49, 110209 (2010)

Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated
diamond surfaces
M. Kubovic, M. Kasu, and H. Kageshima
Appl. Phys. Lett. 96, 052101 (2010)

Enhancement and stabilization of hole concentration of hydrogen-terminated diamond surface
using ozone adsorbates
M. Kubovic and M. Kasu
Jpn. J.. Appl. Phys. 49, 110208 (2010)

Electronic and surface properties of H-terminated diamond surface affected by NO2 gas
M. Kubovic, M. Kasu, H. Kageshima and F. Maeda
Diam. Relat. Mat. 19, 889-893 (2010)

Generic phase diagram of Nd2-xCexCuO4
O. Matsumoto, A. Tsukada, H. Yamamoto, T. Manabe, and M. Naito
Physica C. 470, S101-S103 (2010)

Material characterization of superconducting T '-Nd2CuO4 films synthesized by metal organic
decomposition
O. Matsumoto, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito
Physica C. 470, 1029-1032 (2010)

Raman light scattering study and microstructural analysis of epitaxial films of the electron-
doped superconductor La2-xCexCuO4
M. Rahlenbeck, M. Wagenknecht, A. Tsukada, D. Koelle, R. Kleiner, B. Keimer, and
C. Ulrich

Euro. Phys. J. B 75, 461-467 (2010)

Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-
plane growth orientation
Y. Taniyasu and M. Kasu
Appl. Phys. Lett. 96, 221110 (2010)

High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
K. Ueda and M. Kasu
Jpn. J. Appl. Phys. 49, 04DF16 (2010)

Preparation of superconducting parent compounds T-RE2CuO4 by molecular beam epitaxy
H. Yamamoto, A. Tsukada, O. Matsumoto, and M. Naito
Physica C. 470, S88-S89 (2010)

MBE growth and properties of T '-La2CuO4 thin films
H. Yamamoto, O. Matsumoto, A. Tsukada, and M. Naito
Physica C. 470, 1025-1028 (2010)

Epitaxial Heusler alloy Co2FeSi films on Si(111) substrates grown by molecular beam epitaxy
M. Zander, J. Herfort, K. Kumakura, H. P. Scohnherr, and A. Trampert
J. Phys. D-Appl. Phys. 43, 305004 (2010)




Publications in 2009

Identification of etch-pit crystallographic faces induced on diamond surface by H2/O2 etching
plasma treatment
J. Achard, F. Silva, O. Brinza, X. Bonnin, V. Lille, R. Issaoui, M. Kasu, and A.
Gicquel

Appl. Phys. Lett. 206, 1949-1954 (2009)

Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
T. Akasaka, Y. Kobayashi, and M. Kasu
Appl. Phys. Express. 2, 091002 (2009)

Structural and electrical properties of H-terminated diamond field-effect transistor
M. Kubovic, M. Kasu, Y. Yamauchi, K. Ueda, and H. Kageshima
Diam. Relat. Mat. 18, 796-799 (2009)

SImprovement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide
Atmosphere
M. Kubovic and M. Kasu
Appl. Phys. Express. 2, 086502 (2009)

High-temperature characteristics up to 590 degrees C of a pnp AlGaN/GaN heterojunction
bipolar transistor
Toshiki Makimoto and Kazuhide Kumakura
Appl. Phys. Lett. 94, 103502 (2009)

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y.
Taniyasu and M. Kasu

Appl. Phys. Lett. 95, 031903 (2009)

Reduction dependence of superconductivity in the end-member T ' cuprates
O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito
Physica C 469, 940-943 (2009)

Generic phase diagram of "electron-doped" T ' cuprates
O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito
Physica C 469, 924-927 (2009)

Synthesis and properties of superconducting T-'-R2CuO4 (R=Pr, Nd, Sm, Eu, Gd)
O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe and M. Naito
Phy. Rev. B 79, 100508 (2009)

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction
bipolar transistors
A. Nishikawa, K. Kumakura, M. Kasu, and T. Makimoto
J. Cryst. Growth.311, 3000-3002 (2009)

Lattice Instability in High-Temperature Superconducting Cuprates: Polarons Probed by EXAFS
H. Oyanagi, C. Zhang, A. Tsukada, and M. Naito
J. Supercond. Novel Magn. 22, 131 (2009)

MOVPE growth of single-crystal hexagonal AlN on cubic diamond
Y. Taniyasu and M. Kasu
J. Cryst. Growth.311, 2825-2830 (2009)

Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate
C. L. Tsai, Y. Kobayashi, T. Akasaka, and M. Kasu
J. Cryst. Growth.311, 3054-3057 (2009)

Beryllium-doped single-crystal diamond grown by microwave plasma CVD
K. Ueda, and M. Kasu
Diam. Relat. Mat. 18, 121 (2009)




Publications in 2008

Anisotropic in-plane strains in nonpolar AlN and AlGaN (1120) films grown on SiC (1120)
substrates
T. Akasaka, Y. Kobayashi and M. Kasu
Appl. Phys. Lett. 93, 161908 (2008)

RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface
termination
M. Kasu, K. Ueda, H. Kageshima and Y. Yamauchi
IEICE Trans. Electron. E91C (7), 1042 (2008)

Gate interfacial layer in hydrogen-terminated diamond field-effect transistors
Kasu, K. Ueda, H. Kageshima and Y. Yamauchi
Diam. Relat. Mat. 17, 741 (2008)

High performance pnp AlGaN/GaN heterojunction bipolar transistors on GaN substrates
K. Kumakura and T. Makimoto
Appl. Phys. Lett. 92, 153509 (2008)

Carrier transport mechanisms of Pnp AlGaN/GaN heterojunction bipolar transistors
K. Kumakura and T. Makimoto
Appl. Phys. Lett. 92, 093504 (2008)

High-temperature characteristics of AlxGa1-xN-based vertical conducting
A. Nishikawa, K. Kumakura, M. Kasu and T. Makimoto
Jpn. J. Appl. Phys. 47, 2838 (2008)

Thick diamond layers angled by polishing to reveal defect and impurity depth profiles
A. Tallaire, M. Kasu and K. Ueda
Diam. Relat. Mat. 17, 506 (2008)

Origin of growth defects in CVD diamond epitaxial films
A. Tallaire, M. Kasu, K. Ueda and I. Makimoto
Diam. Relat. Mat. 17, 60 (2008)

Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes
Y. Taniyasu and M. Kasu
Diam. Relat. Mat. 17, 1273 (2008)

High-pressure and high-temperature annealing effects of boron-implanted diamond
K. Ueda and M. Kasu
Diam. Relat. Mat. 17, 502 (2008)

High-pressure and high-temperature annealing of diamond ion-implanted with various elements
K. Ueda and M. Kasu
Diam. Relat. Mat. 17, 1269 (2008)

Superconductivity in undoped T’-RE2CuO4 with Tc over 30 K
O. Matsumoto, A. Utsuki, A. Tsukada, H. Yamamoto, T. Manabe, M. Naito
Physica C 468, 1148 (2008)

Undoped cuprate superconductors ? band superconductors or oxygen-doped Mott-Hubbard
superconductors?
M Naito, O Matsumoto, A Utsuki, A Tsukada, H Yamamoto and T Manabe
J. Phys.: CS 108, 012037 (2008)

Epitaxial Growth of Superconducting Eu2-xCexCuO4 Thin Films
Y. Krockenberger, J. Kurian, M. Naito and L. Alff
Jpn. J. Appl. Phys. 47, 6307 (2008)

Superconductivity phase diagrams for the electron-doped cuprates R2-xCexCuO4 (R=La, Pr,
Nd, Sm, and Eu)
Y. Krockenberger, J. Kurian, A. Winkler, A. Tsukada, M. Naito and L. Alff
Phys. Rev. B 77, 060505 (2008)

Local structure study of T ' cuprate superconductors
H. Oyanagi, A. Tsukada and M. Naito
J. Phys. Chem. Solids 69, 2307 (2008)

Enhanced superconductivity by reducing magnetism in strained La2-xSrxCuO4 films
H. Sato
Physica C 468, 2366 (2008)

Thickness dependence of superconductivity and resistivity in La1.85Sr0.15CuO4 films
H. Sato
Physica C 468, 991 (2008)

Phase diagram of the electron-doped La2-xCexCuO4 cuprate superconductor from Andreev
bound states at grain boundary junctions
M. Wagenknecht, D. Koelle, R. Kleiner, S. Graser, N. Schopohl, B. Chesca, A.
Tsukada, S. T. B. Goennenwein and R. Gross

Phys. Rev. Lett. 100 (22), 227001 (2008)

Magneto-optical observation of magnetic flux in patterned MgB2 films
T. Ishibashi, T. Kawata, A. Tsukada, H. Shibata, M. Naito and K. Sato
Physica C 468 (15-20), 1313 (2008)




Publications in 2007

Terahertz mixing in MgB2 microbolometers
S. Cherednichenko, V. Drakinskiy, K. Ueda and M. Naito
Appl. Phys. Lett. 90 2, 023507-1 (2007)

Threading dislocations in heteroepitaxial AIN layer grown by MOVPE on SiC (0001) substrate
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
J. Cryst. Growth 298, 310 (2007)

Cathodeluminescence, photoluminescence, and reflectance study of an aluminum nitride layer
grown on silicon carbide substrate
G.i M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y.
Taniyasu, M. Kasu and T. Makimoto

J. Appl. Phys. 101, 023511 (2007)

Low-resistance graded AIGaN buffer layers for vertical conducting devices on n-SiC substrates
A. Nishikawa, K. Kumamura, T. Akasaka and T. Makimoto
J. Cryst. Grownth 298, 819 (2007)

BGaN micro-islands as movel buffers for growth of high-quality GaN on sapphire
T. Akasaka, Y. Kobayashi and T. Makimoto
J. Cryst. Growth 298, 320 (2007)

High-pressure and high-temperature annealing as an activation method for ion-implanted
dopants in diamond
Kenji Ueda, Makoto Kasu, and Toshiki Makimoto
Appl. Phys. Lett. 90 12, 122102 (2007)

Interface Microstructure of MgB2/AI-AIOx/MgB2 Josephson Junctions Studied by Cross-
Sectional Transmission Electron Microscopy
Kenji Ueda, Shiro Saito, Kouichi Semba, Toshiki Makimoto, and Michio Naito
Jpn. J. Appl. Phys. 46 12, L271 (2007)

RF gate capacitance-voltage characteristics of asubmicron-long-gate diamond field-effect
transistors with hydrogen surface termination
M. Kasu, K. Ueda, Y. Yamauchi and T. Makimoto
Appl. Phys. Lett. 90 3, 043509 (2007)

AlN Light-emitting Diodes
Y. Taniyasu, M. Kasu and T. Makimoto
Modern Wide Bandgap Semiconductors and Devices Springer- Verlag, 152 (2007)

AlN p-n Junction UV-LEDs
Y. Taniyasu, M. Kasu and T. Makimoto
3rd Asia-Pasific WOrkshop on Widegap Semiconductor, 57 (2007)

Low on resistance of GaN p-i-n vertical conducting diodes grownon 4H-SiC substrate
A. Nishikawa, K. Kumamura, T. Makimoto
Physica Status Solidi 4 7, 2662 (2007)

High critical electric field exceeding 8 MV/cm measured using AIGaN p-i-n Vertical conducting
diode on n-SiC substrate
Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto
J. J. Appl. Phys 46 4B, 2316 (2007)

Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double
heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto
Appl. Phys. Lett. 91 (2007) 133514

Radiation nad polarization properties of free-exciton emission from AIN (0001) surface
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
Appl. Phys. Lett. 90 26, 261911 (2007)

Diamond-based RF power transistors: Fundamentals and applications
M. Kasu, K. Ueda, A. Tallaire, Y. Yamauchi, and T. Makimoto
Diamond Relat. Matel. 16 (2007) 1010

Nonpolar AlBN (1120) and (1100) films grown on SiC substrates
T. Akasaka, Y. Kobayashi, and Toshiki Makimoto
Appl. Phys. Lett. 91, 041914 (2007)

世界最短波長210nmの遠紫外発光ダイオード
Y. Taniyasu, M. Kasu and T. Makimoto
技術ジャーナル 19 2, 64 (2007)

深紫外光源のための窒化物半導体の開発
T.Makimoto, Y. Taniyasu, M. Kasu, Y. Kobayashi and T. Akasaka
応用物理 76 5, 509 (2007)

AIN遠紫外発光ダイオードの現状と課題
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
化合物半導体の最新技術 大全集 229 (2007)

AIN deep-ultrabiolet light-emitting diodes
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
化学と工業 60 8, 783 (2007)




Publications in 2006

AIN pin light-emitting diode with a wavelength of 210 nm
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
Nature 441, 325 (2006)

Growth of Nitride Semiconductors and Its Application to Heterojunction Bipolar Transistors
Toshiki Makimoto and Kazuhide Kumakura
Electronics and Communications in Japan 89, 20 (2006)

Low-temperature growth of of MgB2 thin films with Tc above 38 K
Kenji Ueda and Toshiki Makimoto
J. J. Appl. Phys 45, 5738 (2006)

Diamond FET on high-quality polycrystalline diamond with fT of 45 GHz and fmax of > 120 GHz
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A.
Scarsbrook and S. E. Coe

IEEE Electron Device Lett. 27, 570 (2006)

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Tetuya Akasaka and Toshiki Makimoto
Appl. Phys. Lett. 88, 173508 (2006)

High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films
Kenji Ueda, Makoto Kasu, Alexasnder Tallaire, Toshiki Makimoto
Diamond and Related Materials 15, 1789 (2006).

Characterization of high-quality polycrystalline diamond and its high FET performance
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A.
Scarsbrook and S. E. Coe

Dia. Rel. Mater. 15, 1954 (2006)

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
Tetuya Akasaka, Hideki Goto, Yasuyuki Kobayashi, Hidetoshi Nakano and Toshiki
Makimoto

Appl. Phys. Lett. 89, 101110 (2006).

High breakdown with low on-state resistance of p-InGaN/n-GaN vertical conducting diode on n
-GaN substrate
Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto
Appl. Phys. Lett. 89, 153509 (2006).

AIN deep-UV LEDs with a wavelength of 210nm.
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
6th Akasaki Research Center Symposium, 27 (2006).

Increased electron mobility in n-type Si-doped AIN reducing dislocation density
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
Appl. Phys. Lett. 89, 182112 (2006).

Aluminum nitraide deep-ultraviolet light-emitting diodes
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
Technical Review 4, 54 (2006)

Three-dimentional superconductivity and vortex glass transition in La1.87Y0.13CuO4
Hyun-Sook Lee, Heon-Jung Kim, Hyun-Jung Kim, Myung-Hwa Jung, Younghun
Jo, Sung-IK Lee, Akio Tsukada and Michio Naito

Physica B Condensed Matter 378, 447 (2006)

Charge transfer gap for T'-RE2CuO4 and T-La2CuO4 as estimated from Madelung potential
calculations
T. Tsukada, H. Shibata, M. Noda, H. Yamamoto and M. Naito
Physica C Superconductivity 445, 94 (2006)

Doping of Ge in T-La2CuO4 : Rigorous test for electron-hole symmetry for high-Tc
superconductivity
A. Tsukada, H. Yamamoto and M. Naito
Physical. Rev. B 74, 174515 (2006)

Critical electric fields of AIGaN-based vertical conducting dioddes on n-Sic substrates
Atsushi Nishikawa, Kazuhide Kumakura, Tetuya Akasaka and Toshiki Makimoto
Superlattices and Microstructures 40, 332 (2006)

High RF Output Power for H-terminated Diamond FETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki and T. Makimoto
Diamond and Related Materials 15 4-8, 783 (2006)

Diamond RF Power Transistors: Present Status and Prospects
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki and T. Makimoto
Materials Congress 2006 1 1, 35 (2006)

Influence of HPHT Diamond Defects on CVD Homoelitaxial Diamond Growth
Alexander Tallaire, M. Kasu, K. Ueda and T. Makimoto
MRS Meeting 2007 J17.2, 256 (2006)

Improved Diamond FET Characteristics by H2/02 Plasma Tretreatments of HPHT Diamond
Substrate
Alexander Tallaire, M. Kasu, K. Ueda, Y. Yamauchi and T. Makimoto
MRS Meeting 2006 1, 243 (2006)

Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown
Superconducting NdBa2Cu3O7-8 Thin Films
Shin-ichi Karimoto, Hisashi Sato and Toshiki Makimoto
J. J. Appl. Phys 45, L419 (2006)

Growth of Boron Nitride on 6h-Sic Substrate by Flow-rate Modulation Epitaxy
Yasuyuki Kobayashi and Toshiki Makimoto
Jpn. J. Appi. Phys. 45 4B, 3519 (2006)

Growth of GaN on sapphire substrates using nobel butter layers of ECR-plasma-sputterd Al2O3
/graded-AION/AIN/Al2O3
Kazuhide Kumakura and Toshiki Makimoto
J. Crystal Growth 292, 155 (2006)

p-InGaN/n-GaN Vertical Conducting Diodes on n+-Sic Substrate for High Power Electronic
Device Applications
Atsushi Nishikawa, Kazuhide Kumakura, Tetuya Akasaka and Toshiki Makimoto
J. J. Appl. Phys 45, 3387 (2006)

Deep-ultraviolet aluminum nitride LED with a wavelength of 210 nm
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
オプトロニクス 25, 127 (2006).

遠赤外LED技術の最新動向
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
オプトニューズ 5, 10 (2006)

The highest oritical electric field among the semiconductors -First determination of the
critical electric field of AIGaN-
Atsushi Nishikawa and Toshiki Makimoto
日経ナノビジネス 41, 21 (2006)

窒化アルミニウムで世界最短波長210nmの遠紫外発光ダイオードの動作に成功
Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto
セラミックス 41 9, 769 (2006)

SiC基板上に作製した窒化物半導体デバイスの現状と将来
牧本 俊樹
光技術コンタクト 44 12, 29 (2006)