Film growth
Film growth is one of the most important and fundamental technology for materials physics. By selecting elements, there are billions of combinations and posibilities. In these options, we will investigate about ferromagnet / semiconductor hetero-structures to improve spin injection efficiency and develop devices with spin and valley physics.
Recently, we have grown EuO on Si to obtain a perfect spin injector on Si. EuO has a spin polarization of 100%. However, its low curie temperature is the problem against a realization of spin devices at RT. Next, if possible, we will try multi-layered structures with ferromagnet oxides to increase curie temperature of this Eu chalcogenides.