NTT Basic Research Laboratories have observed light of 210-nm wavelength from aluminum nitride (AlN) light emitting diodes (LED). This is the shortest wavelength ever observed from any semiconductor, and confirms the long-held theoretical expectation that AlN could emit light in the deep ultraviolet (DUV) region (wavelengths from 200 to 300 nanometers; nano is 10^-9).

  Light emitted at wavelengths in the DUV can efficiently decompose persistent toxic substances such as dioxin and PCBs, which have caused serious environmental problems all over the world. Therefore, our AlN LED promises to have a major environmental impact. In addition, AlN semiconductor itself is harmless, unlike the mercury lamp. Replacing gas lasers with high-power AlN DUV lasers could lead to small, highly reliable, and highly efficient nanometer fabrication.

  This achievement will be reported in "Nature" magazine, May 18 issue.
Yoshitaka Taniyasu, Makoto Kasu, and Toshiki Makimoto, "An aluminium nitride light-emitting diode with a wavelength of 210 nanometres", Nature (18 May, 2006).

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