Katsuhiko Nishiguchi

Basic Research Laboratories
Physical Science lab.

new-functional nanometer-scale devices

Apr. 1, 2011 -

Katsuhiko NISHIGUCHI received his B.E., M.E., and Ph.D. in electrical engineering from Tokyo Institute of Technology, Japan in 1998, 2000, and 2002, respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2002. Since then, he has been engaged in the research on physics and technology of Si nanometer-scale devices for LSI applications with low power consumption and new functions. He was an invited researcher at the National Center for Scientific Research (CNRS), France during September 2008 and also a guest researcher at Delft University of Technology, Delft, the Netherlands during 2012-2013. He was appointed as Distinguished Scientist of NTT in 2011. He is currently a member of Nanodevices Research Group. He received IUPAP Young Author Best Paper Award at the International Conference on Physics of Semiconductors 2000, Graduate Student Award Silver at the Materials Research Society 2000 Fall Meeting, Young Scientist Award at the Japan Society of Applied Physics Spring Meeting in 2000, JSAP Outstanding Paper Award 2013, and the Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology of Japan (the Young Scientists' Prize) in 2013. He is a member of the Japan Society of Applied Physics and the IEEE.

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