Katsuhiko Nishiguchi Nanodevice's group
Physical Science Laboratory
NTT Basic Research Laboratories



KN's mission is a research on nanoscale devices with low power consumption and high functionality. Such devices enable sustainable development of information and telecommunication (IT) network society that provides more confortable and friendly life. The research is supported by combination of various kinds of fabrication processes for silicon transistors and fine measurements.

CONTACT:
  3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198 JAPAN
  E-mail: nishiguchi.katsuhiko@lab.ntt.co.jp
 
Nov. 23, 2011 The paper entitled "Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers" was published in Optical Express.
Oct. 26, 2011 The paper entitled "Stochastic Resonance using a Steep- subthreshold-swing Transistorstochastic resonance" were presented as an oral talk in Microprocesses and Nanotechnology Conferences (MNC 2011). The presentation slides can be checked this site.
Sep. 23, 2011 The paper focusing on idler generation using an electromechanical resonator was published in Physical Review B.
Sep. 15, 2011 The paper focusing on a Si nanowire ion-sensitive FET was published and selected as a cover illustration in IEEE Trans. Nanotechnology.
Aug. 24, 2011 The paper entitled "Stochastic Resonance using a Steep- subthreshold-swing Transistorstochastic resonance" was accepted as an oral talk in Microprocesses and Nanotechnology Conferences (MNC 2011)
Aug. 05, 2011 New HP was uploaded. 
Aug. 01, 2011 The paper focusin on formation of a gold-dot array was published online in "Small".
Jul. 13, 2011  The paper focusing on stochastic resonance was selected as "SPOTLIGHTS: Editors' Choice from APEX and JJAP".
Jun. 20, 2011  The paper focusing on stochastic resonance was published online in Jpn. J. Appl. Phys.