Katsuhiko Nishiguchi Nanodevice's group
Physical Science Laboratory
NTT Basic Research Laboratories


Degree
 1998 Bachelor degree from Tokyo Institute of Technology
 2000 Master degree from Tokyo Institute of Technology
 2002 Ph. D in Engeneering from Tokyo Institute of Technology
     (Doctor thesis: The study of ballistic transport and electron emission with silicon nano-devices)

Experience
2002-present  NTT Basic Laboratories
Sep. 2008   Invited researcher of IEMN, CNRS, France
2011-present  Distinguished Researcher

Awards
2000  IUPAP Young Author Best Paper Award, International Conference on Physics of Semiconductors
“Ballistic transport under magnetic field in silicon vertical transistors”

2000 Graduate Student Award Silver, Materials Research Society 2000 Fall Meeting
“Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots”

2000  2000 Young Scientist Award, Japan Society of Applied Physics (JSAP) 2000 Spring Meeting
“Ballistic transport under magnetic field in silicon vertical transistors”

Conference committee
2008-2009 International Microprocesses and Nanotechnology Conference (MNC)
Program committee member

2009-2011 International Conference on Solid State Devices and Materials (SSDM)
Program committee member

2010 23th International Microprocesses and Nanotechnology Conference (MNC)
Vice-chair of nanodevices’ session

2011 24th International Microprocesses and Nanotechnology Conference (MNC)
Chair of nanodevices’ session