Katsuhiko Nishiguchi Nanodevice's group
Physical Science Laboratory
NTT Basic Research Laboratories


Degree
 1998 Bachelor degree from Tokyo Institute of Technology
 2000 Master degree from Tokyo Institute of Technology
 2002 Ph. D in Engeneering from Tokyo Institute of Technology
     (Doctor thesis: The study of ballistic transport and electron emission with silicon nano-devices)

Experience
2002-present  NTT Basic Laboratories
Sep. 2008   Invited researcher at IEMN, CNRS, France
2011-present  Distinguished Researcher
2012-2013  Visiting scientist at Delft University of Technology, the Netherlands
2015  Visiting associate professor at Tokyo Institude of Technology, Japan

Awards
2000  IUPAP Young Author Best Paper Award, International Conference on Physics of Semiconductors
“Ballistic transport under magnetic field in silicon vertical transistors”

2000 Graduate Student Award Silver, Materials Research Society 2000 Fall Meeting
“Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots”

2000  2000 Young Scientist Award, Japan Society of Applied Physics (JSAP) 2000 Spring Meeting
“Ballistic transport under magnetic field in silicon vertical transistors”

2013 The Young Scientists’ Prize, The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, 2013

2013 JSAP PAPER AWARD 2013
“Single-Electron Stochastic Resonance Using Si Nanowire Transistors”

Conference committee
2008-2014 International Microprocesses and Nanotechnology Conference (MNC)
Program committee member

2009-2011 International Conference on Solid State Devices and Materials (SSDM)
Program committee member

2010 23th International Microprocesses and Nanotechnology Conference (MNC)
Vice-chair of nanodevices’ session

2011-2012 24-25th International Microprocesses and Nanotechnology Conference (MNC)
Chair of nanodevices’ session

2014-2016 27-29th International Microprocesses and Nanotechnology Conference (MNC)
Program vice chair