Katsuhiko Nishiguchi Nanodevice's group
Physical Science Laboratory
NTT Basic Research Laboratories



KN's mission is a research on nanoscale devices with low power consumption and high functionality. Such devices enable sustainable development of information and telecommunication (IT) network society that provides more confortable and friendly life. The research is supported by combination of various kinds of fabrication processes for silicon transistors and fine measurements.


CONTACT:
  3-1 Morinosato Wakamiya, Atsugi-shi,
 Kanagawa, 243-0198 JAPAN
  E-mail: nishiguchi.katsuhiko@lab.ntt.co.jp
 
May 16, 2017 Experimental demonstration of Maxwell's demon using transistors is reported in Nature Communications.
Mar. 16, 2017 Study on A correlated electromechanical system is published in New Journal of Physics.
Jan. 27, 2017 Our paper about formation of a nanometer-scale fluidic channel is published in Adv. Mat. Interfaces.
Sep. 8, 2016 Our paper about an planar cold cathode made of multilayer graphene is published in APEX.
Aug. 15, 2016 Our paper about an MEMS is published in APL and selected for its cover picture.
Jul. 22, 2016 Our paper about an MEMS is published in APEX.
Dec. 7, 2015 Our paper about a single-electron device is published in JAP.
Nov. 10-13, 2015 We gave three presentations about single-electron devices, chemical sensor, and electron emittor, all of which are based on Si transistors, at Microprocesses and Nanotechnology Conferences (MNC 2015).
Aug. 21, 2015 Our paper about thermal-noise suppression based on single-electron feedback control is published in APL .
Aug. 3, 2015 Our paper about a tunnel diode composed of Si and MoS2 is published in APL and selected for its featured article and cover image
Jul. 7, 2015 Our paper was selected in Spotlight of JJAP.
Jun. 18, 2015 The invited talk about thermal noise was given at EM-nano.
Apr. 16, 2015 The paper on deviation from the law of energy equipartition of thermal noise is published in JJAP.
Mar. 9, 2015 The paper on MEMS is published in Nano Letters.