Nanostructure Technology Research Group
NTT Basic Research Laboratories
3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198 Japan

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Publications in 2009 Publications in 2011
Publications in 2010
H. Okamoto, T. Kamada, K. Onomitsu, I. Mahboob, and H. Yamaguchi
"Tunable coupling of mechanical vibration in GaAs micro-resonators "
Physica E 42 (2010) 2849-2852 [abstract]
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
"Contact Conductance Measurement of Locally Suspended Graphene on SiC "
Appl. Phys. Express 3 (2010) 045101 [abstract]
T. Watanabe, K. Onomitsu, and H. Yamaguchi
"Feedback Cooling of a Strained GaAs Micromechanical Beam Resonator "
Appl. Phys. Express 3 (2010) 065201 [abstract]
I. Mahboob, C. Froitier, and H. Yamaguchi
"A symmetry-breaking electromechanical detector "
Appl. Phys. Lett. 96, 213103 (2010) [abstract]
M. Nagase, K. Tamaru, K. Nonaka, S. Warisawa, S. Ishihara, and H. Yamaguchi
"Direct Actuation of GaAs Membrane Resonator by Scanning Probe "
NTT Technical Review August Vol. 8 No. 8 (2010) [abstract]
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
"Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces "
Appl. Phys. Express 3 (2010) 115103 [abstract]
K. Yamazaki, and H. Yamaguchi
"Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors "
Appl. Phys. Express 3 (2010) 106501 [abstract]
M. Poot, S. Etaki, I. Mahboob, K. Onomitsu, H. Yamaguchi, Ya.M. Blanter, and H. S. J. van der Zant
"Tunable Backaction of a DC SQUID on an Integrated Micromechanical Resonator "
PhysRevLett.105, 207203 (2010) [abstract]
I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi
"Enhanced force sensitivity and noise squeezing in an electromechanical resonator coupled to a nanotransistor "
Appl. Phys. Lett. 97, 253105 (2010) [abstract]
S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
"Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices "
Appl. Phys. Express 3 (2010) 075102 [abstract]
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T.Fujisawa, and K. Muraki
"Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding "
Semicond. Sci. Technol. 25 (2010) 125001 (4pp) [abstract]
H. Hibino, H. Kageshima, and M. Nagase
"Epitaxial few-layer graphene: towards single crystal growth "
J. Phys. D: Appl. Phys. 43 (2010) 374005 (14pp) [abstract]
I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi
"Enhanced force sensitivity and noise squeezing in an electromechanical resonator "
Appl. Phys. Lett. 97@(2010) 243105 [abstract]
 
 
 
 
 



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