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NTT Basic Research Laboratories

Nanodevices Research Group

Our research target is to realize nanometer-scale devices with novel concept and ultimate performance such as ultra-low power, high functionality, high sensitivity, and high precision for future science and ICT society.

News

  • 2026-01-7: New Publication

    Our paper has been published in Communications Physics and featured as a highlight! Read more

  • 2026-01-01: Member Transfer

    Katsuhiko Nishiguchi has moved to Yokohama National University.

  • 2025-10-7: New Internship

    A new internship student, James from Georgia tech, joins our group!

  • 2025-07-1: New Internship

    A new internship student, Ken from ESPCI, joins our group!

  • 2023-12-19: Press release "Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty"
  • 2023-05-18: Group homepage renewed
  • 2023-02-1: New Member

    New member Chloe Salhani joins our group!

Our Research

Research on novel functional silicon quantum devices using high-accuracy single-electron control
Research 5

We aim to achieve high-accuracy control of a single electron using silicon single-electron devices that can transfer a single electron with high accuracy, and to realize new devices that take advantage of its quantum mechanical properties. We are working on observation of ultrafast coherent oscillations of single electrons, control of single-electron wave packets in quantum Hall systems, and collision experiments of single hot electrons.

Si quantum dot single-electron pump for metrology applications

Fast and accurate Si single-electron pumps with a dynamical quantum dot with tunable barriers are promising for the application to quantum current standards and the quantum metrology triangle (QMT) experiments. We have been promoting collaborations with National Metrology Institutes in Europe [Euramet e-SI-Amp] and Japan [JSPS KAKENHI S (Quantum Standards and Ultimate Precision Measurements Based on Single Electrons) ].

Single-electron sensor and data processing
Research 2

Single electrons are manipulated and monitored using Si nanometer-scale transistors at room temperature. These functions would enable high-sensitivity charge sensor as well as circuits using one electron as one bit of information.

Information thermodynamics
Research 1

We are studying information thermodynamic concept such as Maxwell’s demon and Landauer’s principle to achieve extreme energy efficient operation of silicon nanodevices.

Silicon valleytronics
Research 4

We are exploring new functionalities of silicon devices using valley degrees of freedom. At the special silicon interface, valleys that are independent in bulk silicon are strongly coupled and exhibit unusual properties such as direct optical transitions in silicon. Incorporating this property into silicon devices enables gate control of indirect-to-direct optical transitions in silicon.

Nanoscale Silicon-based spin device
Research 3

Exchange interactions in ferromagnetic semiconductors exhibit various phenomena induced by coupling with charges, photons, and phonons. There are still many unexplored domains in the field of ferromagnetic semiconductor nanodevices. We are particularly interested in reproducing the fundamental physics of magnetic atoms and the underlying physics beyond it(e.g., quantum critical phenomenon) by manipulating the electronic correlation in nanostructures.

Group Members

Yamahata
Gento Yamahata

Group Leader

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Fujiwara
Akira Fujiwara
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Hayashi
Toshiaki Hayashi
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Tanaka
Hirotaka Tanaka
Noborizaka
Jin-ichiro Noborisaka
Chida
Kensaku Chida
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Osugi
Rento Osugi
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Member 8
Takase Shimizu
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James
Dongjin (James) Choi

Internship student (Georgia tech)

Publications

Opportunities

The Nanodevice Research Group at NTT Basic Research Laboratories (NTT-BRL) is seeking highly motivated researchers for both permanent and postdoctoral positions. We also offer internship opportunities with some support available from NTT-BRL. If you are a student or researcher interested in joining us, please contact Dr. Gento Yamahata for more details (see the Contact). For comprehensive information on recruitment and required documents, please visit the NTT R&D website.

Contact

Feel free to contact us at gento.yamahata[at]ntt.com