藤原 聡(ふじわら あきら) 博士(工)


Updated on October 1, 2020  English version is here.

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略歴

受賞暦

学会・委員会等活動

客員教員・非常勤講師等活動

CV (Curriculum Vitae 含む全論文リスト等) (as of 2020.10.1)

http://www.researcherid.com/rid/A-6648-2012 (as of 2018.6.15)

Total: 171 papers, Average Citations 19 h-index 32

First author: 17 paper, Average Citations 32.94  h-index 11

 

Google Scholor Citations (Automaticlly updated)

最近の主な発表論文・国際会議発表 (updated on 2020.10.1)

Single-electron transfer and dynamics, Tunable-barrier single-electron transistor and double quantum dots, Single-dopant device

[1]       S. P. Giblin, E. Mykkänen, A. Kemppinen, P. Immonen, A. J. Manninen, M. Jenei, M. Möttönen, G. Yamahata, A. Fujiwara  and M.  Kataoka, Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility,  Metrologia doi.org/10.1088/1681-7575/ab72e0 (2020).

[2]       (Published in Nature Nanotech. !)G. Yamahata, S. Ryu, N. Johnson, H-S. Sim, A. Fujiwara, and M. Kataoka, Picosecond coherent electron motion in a silicon single-electron source, Nature Nanotechnology 14, 1019–1023 (2019).

[3]       N. Johnson, G. Yamahata, and A. Fujiwara, Measurement of the curvature and height of the potential barrier for a dynamic quantum dot, Appl. Phys. Lett. 115, 162103 (2019).

[4]       S. Giblin, A. Fujiwara, G. Yamahata, M. H. Bae, N. Kim, A. Rossi, M. Möttönen, and M. Kataoka, Evidence for universality of tunable-barrier electron pumps, Metrologia 56, 044004 (2019).

[5]       G. Yamahata, S. P. Giblin, M. Kataoka, and T. Karasawa, and A. Fujiwara, High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump, Scientific Reports 7, 45137 (2017).

[6]       G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara, Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107, Appl. Phys. Lett. 109, 013101 (2016).
 ( See http://www.npl.co.uk/news/record-speed-and-accuracy-achieved-with-single-electron-pumps )

[7]       G. Yamahata, T. Karasawa, and A. Fujiwara, Gigahertz single-hole transfer in Si tunable-barrier pumps, Appl. Phys. Lett. 106, 023112 (2015).

[8]       G. Yamahata, K. Nishiguchi, and A. Fujiwara, Gigahertz single-trap electron pumps in silicon, Nat. Commun. 5, 5038 (2014).

[9]       G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014).

[10]   G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nano Lett. 12 763−768 (2012).

[11]   G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron huttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 222104 (2011).

[12]   S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).

[13]   S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett.  93, 222103 (2008).

[14]   A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Appl. Phys. Lett. 92, 042102 (2008).

[15]   H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).

[16]   M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).

[17]   A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 88 053121 (2006).

[18]   A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett.  84, 1323-1325 (2004).

[19]   A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

 

Single-electron detection and counting statistics / stochastic resonance

[1]      (Published in Nature Com. !) K Chida, S. Desai, K Nishiguchi, and A Fujiwara: Power generator driven by Maxwell's demon, Nat. Commun. 8, 15310 (2017).

[2]      K Chida, K Nishiguchi, G Yamahata, H Tanaka, A Fujiwara: Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection, Appl. Phys. Lett. 107, 073110, 2015 (2015).

[3]      P. A. Carles, K Nishiguchi, and A Fujiwara: Deviation from the law of energy equipartition in a small dynamic-random-access memory, Jpn. J. Appl. Phys. 54, 06FG03 (2015).

[4]      K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal noise, Nanotechnology 25, 275201 (2014).

[5]      K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele, Wide-bandwidth charge sensitivity with a radio-frequency field-effect Transistor, Appl. Phys. Lett. 103, 143102 (2013).

[6]      K. Nishiguchi and A. Fujiwara: Detecting signals buried in noise via nanowire transistors using stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).

[7]      K. Nishiguchi and A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire Transistors, Jpn. J. Appl. Phys. 50, 06GF04 (2011)..

[8]      K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).

[9]      K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).

 

Functional nanotransistors, sensors, molecular electronics

[1]      (Published in Nature Com !)   H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Electron aspirator using electron–electron scattering in nanoscale silicon, Nature Communications 9, 4813 (2018)

[2]      (Published in Nature Materials !) R. Sivakumarasamy, R. Hartkamp, B. Siboulet, J.-F. Dufreche, K. Nishiguchi, A. Fujiwara, and N. Clément, Selective-layer-free Blood Serum Ionogram based on Ion-specific Interactions with a Nanotransistor, Nature Materials 17 464 (2018).

[3]      N. Clement and A. Fujiwara, Molecular diodes: Breaking the Landauer limit, Nat. Nanotech. 12, 725 (2017).

[4]      N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors, Nano Lett. 13, 3903−3908 (2013).

[5]      I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an Electromechanical Resonator , Phys. Rev. Lett. 110 127202 (2013).]

[6]      N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity, Appl. Phys. Lett. 98, 014104 (2011).

[7]      I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature Communications 2, 198 doi:10.1038/ncomms1201 (2011).

[8]      N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).

 

Silicon quantum well and  optical properties

[1]      J. Noborisaka, K. Nishiguchi, A. Fujiwara: Electric tuning of direct-indirect optical transitions in silicon, Scientific Reports 4, 6950 (2014).

[2]      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara: Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).

[3]      J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 96, 112102 (2010).

 Physics of  Si 2DEG and valley physics in collaboration with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina (Univ. of Bath) , Dr. Vincent Renard (CEA)

[1]      V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara, Y. Hirayama and K. Takashina, Valley polarization assisted spin polarization in two dimensions, Nat. Commun. 6, 7230 (2015).

[2]      V. T. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic behaviour in SOI quantum wells with strong intervalley scattering, Scientific reports | 3 : 2011 | DOI: 10.1038/srep02011 (2013).

[3]      K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y. Hirayama, Phys. Rev. B 88, 201301(R) (2013).

[4]      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hiryama: Electron and  hole mobilities at a Si/SiO2 interface with giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).

[5]      K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama: Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403 (2011).

[6]      K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki: Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104 (2009).

[7]      Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, and Y. Hirayama: Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICS LETTERS 94, 142101 (2009).

 

招待講演(筆頭)

[1]      A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron dynamics in a silicon dynamic quantum dot, Int. Workshop on Cool Electrons in Flatlands (CEF2020) (June 15-24, 2020, Catania, Italy, held as virtual workshop)

[2]      A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC2019) (Oct.. 27-30, 2019, Stockholm, Sweden)

[3]      A. Fujiwara, Ultimate electronics with silicon nanowire MOSFETs, Workshop on Innovative Nanoscale Devices and Systems (WINDS) (Nov. 25-30, 2018, Hawaii, USA)

[4]      A. Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi, Tunable-barrier electron pump for quantum current standards and information-to-energy converters China-Japan International Workshop on Quantum Technologies, QTech2018 (Aug 23-24, 2018, Hefei, China).

[5]      A. Fujiwara, Ultimate electronics with control of single electrons, 7th Summer School on Semiconductor/Superconducting Quantum Coherence Effect and Quantum Information (August 27-29, 2017, Shuzenji, Japan).

[6]      A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate electronics with control of single electrons, EM-NANO2017 (June 18-21, 2017, Fukui, Japan).

[7]      A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate Single Electronics with Silicon Nanowire MOSFETs, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017, Kyoto, Japan).

[8]      A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, and M. Kataoka, Gigahertz single-electron pump for quantum current standard,  33rd ICPS (Beijing, 31 July- 5 August, 2016)

[9]      A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump towards a Representation of the New Ampere, 2015 SSDM (Sapporo, 27-30 September, 2015).

[10]  A. Fujiwara, G. Yamahata, J. Noborisaka, and K. Nishiguchi, Nanoscale Silicon MOSFET for Metrology and Valleytronics Applications, 2015 UK-Japan Silicon Nanoelectronics and Nanotechnology Symposium (Southampton, 9-10 July, 2015).

[11]  (Plenary talk) A. Fujiwara, Silicon single-electron devices for ultimate electronics, EURAMET DC & Quantum Metrology Meeting (Bern, 27-29 May 2015)

[12]  A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse applications, The 6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)

[13]  (Plenary talk) A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf. on Micro and Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).

[14]  A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon Single-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics Workshop (June 2012, Hawaii, USA).

[15]  A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-MooreE& Beyond CMOSEEra (March 1 E 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 E20.)

[16]  A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)

[17]  A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)

[18]  A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).

[19]  A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).

[20]  A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).

[21]  A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).

[22]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase  Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).

[23]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).

[24]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).



筆頭論文(抜粋)

[1]      A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Applied Physics Letters 92, 042102 (2008).

[2]      A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

[3]      A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).

[4]      A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42, 2429-2433 (2003).

[5]      A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80, 4567-4569 (2002).

[6]      A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 1209-1213 (2002).

[7]      A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

[8]      A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Double-island single-electron devices - A useful unit device for single-electron logic LSI's, IEEE Transactions on Electron Devices 46, 954-959 (1999).

[9]      A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263 (1998).

[10]  A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).

[11]  A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67, 2957-2959 (1995).


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