藤原 聡(ふじわら あきら) 博士(工)


Updated on Oct 10, 2017  English version is here.

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略歴

受賞暦

学会・委員会等活動

客員教員・非常勤講師等活動

CV (Curriculum Vitae 含む全論文リスト等) (as of 2017.4..27)

http://www.researcherid.com/rid/A-6648-2012 (as of 2016.12.27)

Total: 165 papers, Average Citations 17.44  h-index 29

First author: 17 paper, Average Citations 30.76  h-index 11

 

Google Scholor Citations (Automaticlly updated)

最近の発表論文・国際会議発表 (updated on 2017.6.8)

Single-electron transfer and dynamics, Tunable-barrier single-electron transistor and double quantum dots, Single-dopant device

[1]       G. Yamahata, S. P. Giblin, M. Kataoka, and T. Karasawa, and A. Fujiwara, High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump, Scientific Reports 7, 45137 (2017).

[2]       G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara, Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107, Appl. Phys. Lett. 109, 013101 (2016).
 ( See http://www.npl.co.uk/news/record-speed-and-accuracy-achieved-with-single-electron-pumps )

[3]       G. Yamahata, T. Karasawa, and A. Fujiwara, Gigahertz single-hole transfer in Si tunable-barrier pumps, Appl. Phys. Lett. 106, 023112 (2015).

[4]       G. Yamahata, K. Nishiguchi, and A. Fujiwara, Gigahertz single-trap electron pumps in silicon, Nat. Commun. 5, 5038 (2014).

[5]       G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014).

[6]       G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nano Lett. 12 763−768 (2012).

[7]       G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron huttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 222104 (2011).

[8]       S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).

[9]       S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett.  93, 222103 (2008).

[10]   A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Appl. Phys. Lett. 92, 042102 (2008).

[11]   H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).

[12]   M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).

[13]   A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 88 053121 (2006).

[14]   A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett.  84, 1323-1325 (2004).

[15]   A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

 

Single-electron detection and counting statistics / stochastic resonance

[1]      (Published in Nature Com. !) K Chida, S. Desai, K Nishiguchi, and A Fujiwara: Power generator driven by Maxwell's demon, Nat. Commun. 8, 15310 (2017).

[2]      K Chida, K Nishiguchi, G Yamahata, H Tanaka, A Fujiwara: Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection, Appl. Phys. Lett. 107, 073110, 2015 (2015).

[3]      P. A. Carles, K Nishiguchi, and A Fujiwara: Deviation from the law of energy equipartition in a small dynamic-random-access memory, Jpn. J. Appl. Phys. 54, 06FG03 (2015).

[4]      K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal noise, Nanotechnology 25, 275201 (2014).

[5]      K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele, Wide-bandwidth charge sensitivity with a radio-frequency field-effect Transistor, Appl. Phys. Lett. 103, 143102 (2013).

[6]      K. Nishiguchi and A. Fujiwara: Detecting signals buried in noise via nanowire transistors using stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).

[7]      K. Nishiguchi and A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire Transistors, Jpn. J. Appl. Phys. 50, 06GF04 (2011)..

[8]      K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).

[9]      K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).

 

High-sensitive charge sensor application

[1]      N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors, Nano Lett. 13, 3903−3908 (2013).

[2]      I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an Electromechanical Resonator , Phys. Rev. Lett. 110 127202 (2013).

[3]      I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature Communications 2, 198 doi:10.1038/ncomms1201 (2011).

[4]      N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).

Silicon quantum well and  optical properties

[1]      J. Noborisaka, K. Nishiguchi, A. Fujiwara: Electric tuning of direct-indirect optical transitions in silicon, Scientific Reports 4, 6950 (2014).

[2]      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara: Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).

[3]      J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 96, 112102 (2010).

 Physics of  Si 2DEG and valley physics in collaboration with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina (Univ. of Bath) , Dr. Vincent Renard (CEA)

[1]      V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara, Y. Hirayama and K. Takashina, Valley polarization assisted spin polarization in two dimensions, Nat. Commun. 6, 7230 (2015).

[2]      V. T. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic behaviour in SOI quantum wells with strong intervalley scattering, Scientific reports | 3 : 2011 | DOI: 10.1038/srep02011 (2013).

[3]      K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y. Hirayama, Phys. Rev. B 88, 201301(R) (2013).

[4]      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hiryama: Electron and  hole mobilities at a Si/SiO2 interface with giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).

[5]      K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama: Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403 (2011).

[6]      K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki: Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104 (2009).

[7]      Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, and Y. Hirayama: Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICS LETTERS 94, 142101 (2009).

 

招待講演(筆頭)

[1]      A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate electronics with control of single electrons, EM-NANO2017 (June 18-21, 2017, Fukui, Japan).

[2]      A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate Single Electronics with Silicon Nanowire MOSFETs, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017, Kyoto, Japan).

[3]      A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, and M. Kataoka, Gigahertz single-electron pump for quantum current standard,  33rd ICPS (Beijing, 31 July- 5 August, 2016)

[4]      A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump towards a Representation of the New Ampere, 2015 SSDM (Sapporo, 27-30 September, 2015).

[5]      A. Fujiwara, G. Yamahata, J. Noborisaka, and K. Nishiguchi, Nanoscale Silicon MOSFET for Metrology and Valleytronics Applications, 2015 UK-Japan Silicon Nanoelectronics and Nanotechnology Symposium (Southampton, 9-10 July, 2015).

[6]      (Plenary talk) A. Fujiwara, Silicon single-electron devices for ultimate electronics, EURAMET DC & Quantum Metrology Meeting (Bern, 27-29 May 2015)

[7]      A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse applications, The 6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)

[8]      (Plenary talk) A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf. on Micro and Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).

[9]      A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon Single-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics Workshop (June 2012, Hawaii, USA).

[10]  A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-MooreE& Beyond CMOSEEra (March 1 E 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 E20.)

[11]  A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)

[12]  A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)

[13]  A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).

[14]  A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).

[15]  A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).

[16]  A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).

[17]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase  Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).

[18]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).

[19]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).



筆頭論文(抜粋)

[1]      A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Applied Physics Letters 92, 042102 (2008).

[2]      A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

[3]      A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).

[4]      A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42, 2429-2433 (2003).

[5]      A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80, 4567-4569 (2002).

[6]      A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 1209-1213 (2002).

[7]      A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

[8]      A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Double-island single-electron devices - A useful unit device for single-electron logic LSI's, IEEE Transactions on Electron Devices 46, 954-959 (1999).

[9]      A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263 (1998).

[10]  A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).

[11]  A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67, 2957-2959 (1995).


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