NTT BASIC RESEARCH LABORATORYNTT
Dr. Gento Yamahata
Last update 2017.8.14
Japanese/English
Biography
  • 2010.4 - present: Research Scientist at NTT Basic Research Laboratories
    Nanodevices Research Group in Physical Science Laboratory
    (2015.5 - 2015.7: Visiting researcher at National Physical Laboratory, UK)
  • 2009.10 - 2010.3: Postdoctoral researcher at Tokyo Institute of Technology
    (2009.11 - 2010.1: Visiting researcher at Harvard University)
  • 2009: Received Doctor of Engineering from Tokyo Institute of Technology
  • 2005.4 - 2009.9: Department of Physical Electronics, Tokyo Institute of Technology
  • 2001.4 - 2005.3: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Research Interests
  • Single-electron transfer in Si nanowire MOSFETs
    - NTT Technical Review (High-speed Single-electron Transfer toward High-accuracy Current Standards)
  • Quantum states in Si quantum dots
Publications (first author)
    My Google Scholar Citations
  1. High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara,
    Scientific Reports 7, 45137 (2017). [Open access]

  2. Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara,
    Applied Physics Letters 109, 013101 (2016).
       - Editor's Picks in APL (Jul. 10, 2016)
       - News release from NTT
       - News release from National Physical Laboratory
       - Focus on the News in NTT GIJUTU Journal (in Japanese)
       - BRL activity report 27 (2016)

  3. Gigahertz single-hole transfer in Si tunable-barrier pumps,
    G. Yamahata, T. Karasawa, and A. Fujiwara,
    Applied Physics Letters 106, 023112 (2015).
       - BRL activity report 26 (2015)

  4. Gigahertz single-trap electron pumps in silicon,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara,
    Nature Communications 5, 5038 (2014). [Open access]
       - News release from NTT
       - Picked up in natureasia.com (in Japanese)
       - Focus on the News in NTT GIJUTU Journal (in Japanese)
       - BRL activity report 25 (2014)

  5. Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara,
    Physical Review B 89, 165302 (2014).
       - BRL activity report 24 (2013)
    Erratum:
    Physical Review B 90, 039908(E) (2014).

  6. Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots,
    G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, and S. Oda,
    Physcal Review B 86, 115322 (2012).
    arXiv:1111.6873

  7. Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara,
    Applied Physics Letters 98, 222104 (2011).
       - BRL activity report 22 (2011)

  8. Control of Inter-Dot Electrostatic Coupling with a Side Gatein a Silicon Double Quantum Dot Operating at 4.5 K,
    G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, and S. Oda,
    Applied Physics Express 2, 095002 (2009).
       - JSAP Young Scientist Award (2011).

  9. Electron transport through silicon serial triple quantum dots,
    G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, and S. Oda,
    Solid-State Electronics 53, 779-785 (2009).

  10. Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures,
    G. Yamahata, Y. Tsuchiya, S. Oda, Z. A. K. Durrani, and H. Mizuta,
    Japanese Journal of Applied Physics 47, 4820-4826 (2008).

Publications (coauthor)
  1. Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection,
    K. Chida, K. Nishiguchi, G. Yamahata, H. Tanaka and A. Fujiwara,
    Applied Physics Letters 107, 073110 (2015).

  2. Simulation study of charge modulation in coupled quantum dots in silicon,
    T. Kambara, T. Kodera, T. Takahashi, G. Yamahata, K. Uchida, and S. Oda,
    Japanese Journal of Applied Physics 50, 04DJ05 (2011).

  3. Vertical-coupled SiGe double quantum dots,
    C. B. Li, G. Yamahata, J. S. Xia, H. Mizuta, S. Oda, and Y. Shiraki,
    Electronics Letters 46, 940 (2010).

  4. Position-controllable Ge nanowires growth on patterned Au catalyst substrate,
    C. B. Li, K. Usami, G. Yamahata, Y. Tsuchiya, H .Mizuta, and S. Oda,
    Applied Physics Express 2, 015004 (2009).

  5. High-density assembly of nanocrystalline silicon quantum dots,
    A. Tanaka, G. Yamahata, Y. Tsuchiya, K. Usami, H. Mizuta, and S. Oda,
    Current Applied Physics 6, 344 (2006).

International conferences
  1. High-accuracy measurement of single-trap electron pumps in Si,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara:
    International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)
    [Oral]

  2. High-accuracy 2-GHz single-electron pumping in silicon,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara:
    International Symposium on Nanoscale Transport and Technology (ISNTT 2015)
    [Oral]

  3. Ultrafast single-charge transfer in silicon up to 8 GHz,
    G. Yamahata, K. Nishiguchi, S. P. Giblin, M. Kataoka, and A. Fujiwara:
    Silicon Quantum Electronics Workshop 2015
    [Oral]

  4. Gigahertz single-electron transfer via a single-trap level in silicon,
    G. Yamahata, K. Nishiguchi, M. Kataoka, and A. Fujiwara:
    The 21th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21 2015)
    [Oral]

  5. Mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    International Symposium on Nanoscale Transport and Technology (ISNTT 2013)
    [Oral]

  6. Crossover of transfer mechanism in Si single-electron turnstiles,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    2013 International Workshop On Silicon Quantum Electronics
    [Poster]

  7. Accuracy of Single-electron Shuttle Transfer in Si Nanowire MOSFETs,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS-19 2011)
    [Poster]

  8. Shuttling Transfer of Single Electrons in Si Nanowire MOSFETs,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    International Symposium on Nanoscale Transport and Technology (ISNTT 2011)
    [Oral]

International conferences
  • NTT Science and Core Technology Laboratory Group Director Award (2014).
    "Research on high-accuracy and high-sensitivity electronics using single-electron manipulation and detection"

  • JSAP Young Scientist Award (2011).

  • Tejima Research Award (2011).

  • JSAP Young Scientist Oral Presentation Award (2008).

  • The Poster Award for Nanotech in Japan, The 4th International Nanotechnology Conference on Communication and Cooperation (INC4 2008).

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