NTT BASIC RESEARCH LABORATORYNTT
Dr. Gento Yamahata
Biography
  • 2010.4 -: Researcher at NTT Basic Research Laboratories.
  • 2009.10 - 2010.3: Postdoctoral researcher at Tokyo Institute of Technology
    (2009.11 - 2011.1: Visiting researcher at Harvard University)
  • 2009: Received Doctor of Engineering from Tokyo Institute of Technology
  • 2005.4 - 2009.9: Department of Physical Electronics, Tokyo Institute of Technology
  • 2001.4 - 2005.3: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Research Interests
  • Single-electron transfer in Si nanowire MOSFETs
  • Quantum states in Si quantum dots
Publication lists
  • G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, and S. Oda, "Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots," arXiv:1111.6873

  • G. Yamahata, K. Nishiguchi, and A. Fujiwara, "Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett. 98, 222104 (2011)

  • G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, and S. Oda, "Control of Inter-Dot Electrostatic Coupling with a Side Gatein a Silicon Double Quantum Dot Operating at 4.5 K," Appl. Phys. Express 2, 095002 (2009). (APEX/JJAP YOUNG SCIENTIST AWARD 2011)

  • G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, and S. Oda, "Electron transport through silicon serial triple quantum dots," Solid-State Electron. 53, 779 (2009).

  • G. Yamahata, Y. Tsuchiya, S. Oda, Z. A. K. Durrani, and H. Mizuta, "Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures," Jpn. J. Appl. Phys. 47, 4820 (2008).


International conferences
  • G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy of Single-electron Shuttle Transfer in Si Nanowire MOSFETs, The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19 2011)

  • G. Yamahata, K. Nishiguchi, and A. Fujiwara: Shuttling Transfer of Single Electrons in Si Nanowire MOSFETs, International Symposium on Nanoscale Transport and Technology (ISNTT 2011)

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