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- 2010.4 -: Researcher at NTT Basic Research Laboratories.
- 2009.10 - 2010.3: Postdoctoral researcher at Tokyo Institute of Technology
(2009.11 - 2011.1: Visiting researcher at Harvard University)
- 2009: Received Doctor of Engineering from Tokyo Institute of Technology
- 2005.4 - 2009.9: Department of Physical Electronics, Tokyo Institute of Technology
- 2001.4 - 2005.3: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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- Single-electron transfer in Si nanowire MOSFETs
- Quantum states in Si quantum dots
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- G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, and S. Oda,
"Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots,"
arXiv:1111.6873
- G. Yamahata, K. Nishiguchi, and A. Fujiwara,
"Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors,"
Appl. Phys. Lett. 98, 222104 (2011)
- G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, and S. Oda,
"Control of Inter-Dot Electrostatic Coupling with a Side Gatein a Silicon Double Quantum Dot Operating at 4.5 K,"
Appl. Phys. Express 2, 095002 (2009).
(APEX/JJAP YOUNG SCIENTIST AWARD 2011)
- G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, and S. Oda,
"Electron transport through silicon serial triple quantum dots,"
Solid-State Electron. 53, 779 (2009).
- G. Yamahata, Y. Tsuchiya, S. Oda, Z. A. K. Durrani, and H. Mizuta,
"Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures,"
Jpn. J. Appl. Phys. 47, 4820 (2008).
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- G. Yamahata, K. Nishiguchi, and A. Fujiwara:
Accuracy of Single-electron Shuttle Transfer in Si Nanowire MOSFETs, The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19 2011)
- G. Yamahata, K. Nishiguchi, and A. Fujiwara:
Shuttling Transfer of Single Electrons in Si Nanowire MOSFETs, International Symposium on Nanoscale Transport and Technology (ISNTT 2011)
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| Nanodevices Research Group |
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