NTT物性科学基礎研究所NTT
山端 元音
Last update 2017.8.14
Japanese/English
略歴
  • 2010年4月 - 現在: NTT物性科学基礎研究所
    量子電子物性研究部 ナノデバイス研究グループ
    (2015年5月 - 2015年7月:National Physical Laboratory, UK 客員研究員)
  • 2009年10月 - 2010年3月: 東京工業大学電子物理工学専攻 研究員(PD)
    (2009年11月 - 2010年1月: ハーバード大学 客員研究員)
  • 2009年9月: 東京工業大学電子物理工学専攻博士後期課程修了 博士(工学)
  • 2007年3月: 東京工業大学電子物理工学専攻修士課程修了
  • 2005年3月: 東京工業大学電気電子工学科卒業 (現在の工学院電気電子系)
研究分野
  • シリコン細線MOSFETを利用した単電子転送
    - NTT技術ジャーナル (高精度電流標準の実現につながる高速な単電子転送)
  • シリコン量子ドット中の電子状態
論文(主著)
    My Google Scholar Citations
  1. High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara,
    Scientific Reports 7, 45137 (2017). [Open access]

  2. Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara,
    Applied Physics Letters 109, 013101 (2016).
       - Editor's Picks in APL (Jul. 10, 2016)
       - ニュースリリース(NTT持株会社)
       - ニュースリリース(National Physical Laboratory)
       - NTT技術ジャーナル Focus on the News
       - NTT物性研研究活動報告 27 (2016)

  3. Gigahertz single-hole transfer in Si tunable-barrier pumps,
    G. Yamahata, T. Karasawa, and A. Fujiwara,
    Applied Physics Letters 106, 023112 (2015).
       - NTT物性研研究活動報告 26 (2015)

  4. Gigahertz single-trap electron pumps in silicon,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara,
    Nature Communications 5, 5038 (2014). [Open access]
       - ニュースリリース(NTT持株会社)
       - natureasia.com 注目の論文
       - NTT技術ジャーナル Focus on the News
       - NTT物性研研究活動報告 25 (2014)

  5. Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara,
    Physical Review B 89, 165302 (2014).
       - NTT物性研研究活動報告 24 (2013)
    Erratum:
    Physical Review B 90, 039908(E) (2014).

  6. Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots,
    G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, and S. Oda,
    Physcal Review B 86, 115322 (2012).
    arXiv:1111.6873

  7. Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara,
    Applied Physics Letters 98, 222104 (2011).
       - NTT物性研研究活動報告 22 (2011)

  8. Control of Inter-Dot Electrostatic Coupling with a Side Gatein a Silicon Double Quantum Dot Operating at 4.5 K,
    G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, and S. Oda,
    Applied Physics Express 2, 095002 (2009).
       - 第33回応用物理学会論文奨励賞 (2011).

  9. Electron transport through silicon serial triple quantum dots,
    G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, and S. Oda,
    Solid-State Electronics 53, 779-785 (2009).

  10. Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures,
    G. Yamahata, Y. Tsuchiya, S. Oda, Z. A. K. Durrani, and H. Mizuta,
    Japanese Journal of Applied Physics 47, 4820-4826 (2008).


論文(共著)
  1. Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection,
    K. Chida, K. Nishiguchi, G. Yamahata, H. Tanaka and A. Fujiwara,
    Applied Physics Letters 107, 073110 (2015).

  2. Simulation study of charge modulation in coupled quantum dots in silicon,
    T. Kambara, T. Kodera, T. Takahashi, G. Yamahata, K. Uchida, and S. Oda,
    Japanese Journal of Applied Physics 50, 04DJ05 (2011).

  3. Vertical-coupled SiGe double quantum dots,
    C. B. Li, G. Yamahata, J. S. Xia, H. Mizuta, S. Oda, and Y. Shiraki,
    Electronics Letters 46, 940 (2010).

  4. Position-controllable Ge nanowires growth on patterned Au catalyst substrate,
    C. B. Li, K. Usami, G. Yamahata, Y. Tsuchiya, H .Mizuta, and S. Oda,
    Applied Physics Express 2, 015004 (2009).

  5. High-density assembly of nanocrystalline silicon quantum dots,
    A. Tanaka, G. Yamahata, Y. Tsuchiya, K. Usami, H. Mizuta, and S. Oda,
    Current Applied Physics 6, 344 (2006).

国際会議
  1. High-accuracy measurement of single-trap electron pumps in Si,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara:
    International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)
    [Oral]

  2. High-accuracy 2-GHz single-electron pumping in silicon,
    G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara:
    International Symposium on Nanoscale Transport and Technology (ISNTT 2015)
    [Oral]

  3. Ultrafast single-charge transfer in silicon up to 8 GHz,
    G. Yamahata, K. Nishiguchi, S. P. Giblin, M. Kataoka, and A. Fujiwara:
    Silicon Quantum Electronics Workshop 2015
    [Oral]

  4. Gigahertz single-electron transfer via a single-trap level in silicon,
    G. Yamahata, K. Nishiguchi, M. Kataoka, and A. Fujiwara:
    The 21th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21 2015)
    [Oral]

  5. Mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    International Symposium on Nanoscale Transport and Technology (ISNTT 2013)
    [Oral]

  6. Crossover of transfer mechanism in Si single-electron turnstiles,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    2013 International Workshop On Silicon Quantum Electronics
    [Poster]

  7. Accuracy of Single-electron Shuttle Transfer in Si Nanowire MOSFETs,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS-19 2011)
    [Poster]

  8. Shuttling Transfer of Single Electrons in Si Nanowire MOSFETs,
    G. Yamahata, K. Nishiguchi, and A. Fujiwara:
    International Symposium on Nanoscale Transport and Technology (ISNTT 2011)
    [Oral]

受賞
Contact
add
Nanodevices Research Group
|  Contact Us  |  Privacy Policy  |
“2003 NTT Basic Research Laboratories” 2003 Nippon Telegraph and Telephone Corporation