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T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface
Advanced Materials 24 (31), 4296+ (2012).
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K. Hirama, M. Kasu, and Y. Taniyasu
RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond
Ieee Electron Device Letters 33 (4), 513515 (2012).
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K. Hirama, M. Kasu, and Y. Taniyasu
Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
Japanese Journal Of Applied Physics 51 (1), 01AG09 (2012).
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K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu
Thermally Stable Operation of H-Terminated Diamond FETs by NO2 Adsorption and Al2O3 Passivation
Ieee Electron Device Letters 33 (8), 11111113 (2012).
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K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu
Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al2O3 Passivation Layer
Japanese Journal Of Applied Physics 51 (9), 090112 (2012).
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K. Hirama, Y. Taniyasu, and M. Kasu
Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
Japanese Journal Of Applied Physics 51 (9), 090114 (2012).
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K. Kamiya, Y. Ebihara, M. Kasu, and K. Shiraishi
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
Japanese Journal Of Applied Physics 51 (2), 02BJ11 (2012).
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M. Kasu, H. Sato, and K. Hirama
Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties
Applied Physics Express 5 (2), 025701 (2012).
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Y. Kobayashi, K. Kumakura, T. Akasaka, and T. Makimoto
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Nature 484 (7393), 223227 (2012).
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Y. Krockenberger, K. Sakuma, and H. Yamamoto
Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr0.90La0.10CuO2 Thin Films
Applied Physics Express 5 (4), 043101 (2012).
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Y. Krockenberger, H. Yamamoto, M. Mitsuhashi, and M. Naito
Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
Japanese Journal Of Applied Physics 51 (1), 010106 (2012).
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Y. Krockenberger, H. Yamamoto, A. Tsukada, M. Mitsuhashi, and M. Naito
Unconventional transport and superconducting properties in electron-doped cuprates
Physical Review B 85 (18), 184502 (2012).
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T. Makimoto, K. Kumakura, Y. Kobayashi, T. Akasaka, and H. Yamamoto
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Applied Physics Express 5 (7), 072102 (2012).
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H. Sato, and M. Kasu
Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption
Diamond And Related Materials 24 (), 99103 (2012).
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Y. Taniyasu, JF. Carlin, A. Castiglia, R. Butte, and N. Grandjean
Mg doping for p-type AlInN lattice-matched to GaN
Applied Physics Letters 101 (8), 082113 (2012).
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Y. Krockenberger, S. Karimoto, H. Yamamoto, and K. Semba
Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy
Journal Of Applied Physics 112 (8), 083920 (2012).