- （2022年04月22日）
- 世界初、窒化アルミニウムトランジスタを実現
- （2012年04月12日）
- 半導体デバイスの利用範囲を大きく広げる世界初のGaN系半導体剥離プロセスを開発
- （2006年05月17日）
- 世界最短波長210nmの遠紫外発光ダイオードの動作に成功
- （2005年01月01日）
- 液体ヘリウムを必要としない超伝導トンネル接合
- （2002年01月01日）
- 世界最高の周波数特性を持つダイヤモンド半導体の作製に成功
Damage protection from focused ion beam process toward nanocavity-implemented compound semiconductor nanowire lasers
Impedance-matched high-overtone bulk acoustic resonator
Double-Gate Vectorial Frequency Control in Piezoresistive Nanowire Electromechanical Devices
High blocking temperature of Fe nanoparticles embedded in diamond thin films
High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers
Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition
Hybrid Nanowire Photodetector Integrated in a Silicon Photonic Crystal
Suppression of gate screening on edge magnetoplasmons by highly resistive ZnO gate
Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping
All-Optical InAsP/InP Nanowire Switches Integrated in a Si Photonic Crystal
Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing
Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
Spin accumulation in photo-induced potential dimples generated in semiconductors
Tunneling spectroscopy of an indium adatom precisely manipulated on the cross-sectional surface of InAs/GaSb quantum structures
Novel Fabrication Technique of Suspended Nanowire Devices for Nanomechanical Applications
Phys. Status Solidi B-Basic Solid State Phys. , 1900401 (2019).
Ohmic contact to AlN:Si using graded AlGaN contact layer
Low-temperature formation of GeSn nanodots by Sn mediation
Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation
Plasmon Control Driven by Spatial Carrier Density Modulation in Graphene
Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates
Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature
Phase velocity of drifting spin wave packets in semiconductor two-dimensional electron gas
Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell
Alternating InAsP/InP heterostructure nanowires grown with tertiary-butyl chloride
Landau level quantization with gate tuning in an AlN/GaN single heterostructure
N-face (0001) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy
Direct modulation of a single InP/InAs nanowire light-emitting diode
Fano effect in the transport of an artificial molecule
On-chip temporal focusing of elastic waves in a phononic crystal waveguide
High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content
Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale
Transport characteristics in Au/pentacene/Au diodes
Digital processing with single electrons for arbitrary waveform generation of current
Broadband reconfigurable logic gates in phonon waveguides
Terahertz spectroscopy of graphene complementary split ring resonators with gate tunability
Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique
Phys. Status Solidi A-Appl. Mat. 214 (8), UNSP 1600845 (2017).
Surface supersaturation in flow-rate modulation epitaxy of GaN
Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
Subwavelength Nanowire Lasers on a Silicon Photonic Crystal Operating at Telecom Wavelengths
Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE
Surface morphology control of nonpolar m-plane AlN homoepitaxial layers by flow-rate modulation epitaxy
Phys. Status Solidi B-Basic Solid State Phys. 254 (2), 1600545 (2017).
N-face GaN(0001) films with hillock-free smooth surfaces grown by group-III-source flow-rate modulation epitaxy
Jpn. J. Appl. Phys. 55, 04EJ01 (2016).
Study on capacitance?voltage characteristics of diamond field-effect transistors with NO2 hole doping and Al2O3 gate insulator layer
Jpn. J. Appl. Phys. 55, 041301 (2016)..
Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate
Jpn. J. Appl. Phys. 55, 05FH07 (2016). .
InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (1122) GaN substrates
Phys. Status Solidi B-Basic Solid State Phys. 253 (1) 78-83 (2016).
A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate
J. Cryst. Growth 425, 138-140 (2015).
Growth of iron nitride thin films by molecular beam epitaxy
J. Cryst. Growth 415, 36-40 (2015).
Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors
Jpn. J. Appl. Phys. 54, 04DN04 (2015).
Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy
Jpn. J. Appl. Phys. 53 (10), 100201 (2014).
Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells
Appl. Phys. Lett. 105 (5), 053104 (2014).
N-face GaN(0001) films grown by group-III-source flow-rate modulation epitaxy
Jpn. J. Appl. Phys. 53 (11S), 11RC01 (2014).
Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition
J. Micromech. Microeng. 24 (5), 055015 (2014).
Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy
Appl. Phys. Lett. 104 (9), 092113 (2014).
Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
Appl. Phys. Lett. 105 (19), 193509 (2014).
Bulk superconductivity in undoped T '-La1.9Y0.1CuO4 probed by muon spin rotation
Phys. Rev. B 89 (18), 180508 (2014).
Superconducting- and Insulating-Ground States in La2CuO4 Structural Isomers
J. Phys. Soc. Jpn. 83 (11), 114602 (2014).
Superconductivity in cuprates with square-planar coordinated copper driven by hole carriers
Appl. Phys. Express 7 (6), 063101 (2014).
Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy
Appl. Phys. Lett. 104 (7), 072101 (2014).
N-face GaN(0001) films grown by group-III-source flow-rate modulation epitaxy
Jpn. J. Appl. Phys. 53 (11), 11RC01 (2014).
Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy
Appl. Phys. Express 6 (10), 105501 (2013).
Superconductivity in Tungsten-Carbide Nanowires Deposited from the Mixtures of W(CO)6 and C14H10
Jpn. J. Appl. Phys. 52 (7), (2013).
Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
J. Cryst. Growth 382, 36-40 (2013).
Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
Jpn. J. Appl. Phys. 52 (4), (2013).
Emerging superconductivity hidden beneath charge-transfer insulators
Sci Rep 3, 2235 (2013).
Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
Appl. Phys. Express 6 (3), 035503 (2013).
High-Absorption-Efficiency Superlattice Solar Cells by Excitons
Jpn. J. Appl. Phys. 52 (11), (2013).
Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2
Diam. Relat. Mat. 31, 47-49 (2013).
Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule
Surf. Sci. 609, 203-206 (2013).
Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxides
J. Cryst. Growth 378, 184-188 (2013).
High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
Jpn. J. Appl. Phys. 52 (8), (2013).
Edge channel transport in the InAs/GaSb topological insulating phase
Phys. Rev. B 87 (23), 235311 (2013).
Manipulation of mobile spin coherence using magnetic-field-free electron spin resonance
Nat. Phys. 9 (5), 280-283 (2013).
Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface
Advanced Materials 24 (31), 4296+ (2012).
RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond
Ieee Electron Device Letters 33 (4), 513515 (2012).
Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
Japanese Journal Of Applied Physics 51 (1), 01AG09 (2012).
Thermally Stable Operation of H-Terminated Diamond FETs by NO2 Adsorption and Al2O3 Passivation
Ieee Electron Device Letters 33 (8), 11111113 (2012).
Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al2O3 Passivation Layer
Japanese Journal Of Applied Physics 51 (9), 090112 (2012).
Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
Japanese Journal Of Applied Physics 51 (9), 090114 (2012).
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
Japanese Journal Of Applied Physics 51 (2), 02BJ11 (2012).
Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties
Applied Physics Express 5 (2), 025701 (2012).
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Nature 484 (7393), 223227 (2012).
Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr0.90La0.10CuO2 Thin Films
Applied Physics Express 5 (4), 043101 (2012).
Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
Japanese Journal Of Applied Physics 51 (1), 010106 (2012).
Unconventional transport and superconducting properties in electron-doped cuprates
Physical Review B 85 (18), 184502 (2012).
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Applied Physics Express 5 (7), 072102 (2012).
Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption
Diamond And Related Materials 24 (), 99103 (2012).
Mg doping for p-type AlInN lattice-matched to GaN
Applied Physics Letters 101 (8), 082113 (2012).
Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy
Journal Of Applied Physics 112 (8), 083920 (2012).