Akira
Fujiwara, Dr. Eng.
Updated on March 11 2026
Japanese version is here.
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Akira
Fujiwara
NTT
Basic Research Laboratories
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa,
243-0198 JAPAN
Email:
akira.fujiwara
+ @ntt.com
Akira Fujiwara was born in Japan, 1967. He received the B.S., M.S.,
and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in
1989,1991, and 1994, respectively. His Ph.D. thesis was entitled "Resonant
electron capture in semiconductor quantum wells". In 1994, he joined LSI
Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa,
Japan. He moved to the Basic Research Laboratories (BRL) in 1996. He was a
guest researcher at National Institute of Standards and Technology (NIST),
Gaithersburg, USA during 2003-2004. For 2006-2020, He was a group leader of Nanodevcies Research
Group, NTT BRL. For 2007-2015, He was a Distinguished Technical Member, NTT
BRL. For 2012-2020, he served as an Senior Manager of Physical Science
Laboratory. Since 2015, He is a NTT Senior
Distinguished Scientist. In 2011-2014 he was supported by the funding
program for Next
Generation World-Leading Researchers (NEXT Program), JSPS. He was a PI of
the 2018-2022 JSPS
KAKENHI S (Quantum Standards and Ultimate Precision Measurements Based on
Single Electrons). He is a co-I of NEDO Project (Quantum
traceable ultrasmall current sensing) for 2023-2025 and BRiDGE
2026-2027 (Development of Wide-Range Current Measurement Technology with
Quantum Traceability). He is a co-PI of JST-APSIRE-EPSRC 2026-2031 (Massive
scaling of semiconductor quantum-dot technologies). He is a IEEE
fellow and a JSAP (the Japan Society of Applied Physics) Fellow. He is a NPL
Visting Fellow, National Physical Laboratory, UK 2024-2027.
Research Interests
Physics and application of low-dimensional structures
Silicon nanostructures
and their application to nanodevices
Single-electron
devices and their applications
Education
1991 M.S. in Applied
Physics, The University of Tokyo
1994 Ph.D. in Applied
Physics, The University of Tokyo
1989 B.S. in Applied
Physics, The University of Tokyo
Employment
2015- Senior Distinguished Scientist, NTT BRL
2012- Senior Manager of Physical Science Laboratory, NTT BRL
2007-2015 Distinguished technical member, NTT BRL
2006- Group leader of Nanodevices Research Group,
NTT BRＬ
1996 NTT Basic Research Laboratories (BRL)
1994 NTT LSI Laboratories
Professional Activities
2017.10-2023.9 Science Council of Japan, member
2016 & 2012 &
2019 Examiner of Ph. D. thesis, UNSW
2014 & 2011 &
2008 Examiner of Ph. D. thesis, Tokyo
Tech.
2013.4-2014.3 Visiting Professor, Hokkaido University
2012 Examiner of Ph.
D. thesis, UNSW
2011.4-2012.3 Japanese Society of Applied Physics(JSAP) Executive
Director
2010.4-2011.3 Japanese Society of Applied Physics(JSAP) Director
2003.7-2004.7 Guest
researcher at the National Institute of Standards and Technology (NIST),
Gaithersburg, MD, USA
2007.8 Lecturer(Non-Full-time), The University of
Tokyo
Awards and Honors
NPL Visting Fellow,
National Physical Laboratory, UK
2024.9.1-2027.8.31
JSAP fellow, 2020.9.8
JSAP Silicon Technology Division Paper Award, 2020
IEEE fellow, 2018.1.1
Prizes for Science and Technology, the Minister of Education, Culture, Sports, Science and Technology (MEXT), 2017
Japanese Journal of
Applied Physics (JJAP) Paper Awards, 2013
The Young Scientists’
Prize, the Minister of MEXT (Ministry of Education, Culture, Sports, Science,
and Technology), 2006
Japanese Journal of Applied
Physics (JJAP) Paper Awards, 2006
Japanese Journal of Applied
Physics (JJAP) Paper Awards, 2003
SSDM (International
Conference on Solid State Devices and Materials) Paper Award, 1999
SSDM (International
Conference on Solid State Devices and Materials) Young Researcher Award, 1998
Committee/International Conference Activities
Co-chair of
International Symposium on Nanoscale Transport and Technology ISNTT 2015,
Atsugi, Nov. 2015.
Co-chair of Silicon
Quantum Electronics Workshop, Takamatsu, Aug. 3-4, 2015.
Program vice chair of
Int. Conf. on Solid State Devices and Materials (SSDM2014), Tsukuba, Sept.
2014.
Co-chair of
International Symposium on Nanoscale Transport and Technology ISNTT 2013,
Atsugi, Nov. 2013.
Program vice chair of
Int. Conf. on Solid State Devices and Materials (SSDM2013), Fukuoka, Sept.
2013.
Program vice chair of
APPC12（the 12th Asia Pacific Physics Conference）, Makuhari,
Japan, July, 2013.2007.8
Co-chair of Workshop
on Innovative Devices and Systems (WINDS) , Hawaii, USA, Dec. 2-7 2012.
Special committee of Emerging Research Devices
WG, STRJ (Semiconductor Technology Roadmap Committee of Japan) 2008.10-
Government Fund
2026-2031 JST-ASPIRE-EPSRC Co-PI
(Massive scaling of
semiconductor quantum-dot technologies)
2026-2027 CAO BRIDGE Co-I
(Development of Wide-Range Current Measurement
Technology
with Quantum Traceability)
2023-2025 NEDO Project (Quantum traceable ultrasmall
current sensing) Co-I
2018-2022 JSPS
KAKENHI S (Quantum Standards and Ultimate Precision Measurements Based on
Single Electrons) PI
2011-2014 The Funding Program
for Next Generation World-Leading Researchers (NEXT Program), JSPS
CV (as of 2024.5.10)
Curriculum Vitae (CV) incl.
publication lists etc.
Publication data (as of
2018.6.15)
http://www.researcherid.com/rid/A-6648-2012
Total: 171 papers, Average Citations 19 h-index 32 (->36 on Jan 16, 2023)
First author: 17 paper, Average Citations 32.94 h-index 11
Google
Scholor Citations (automatically updated)
Recent selected papers/international
conferences (updated
on May 10, 2024)
Single-electron transfer and dynamics, Tunable-barrier single-electron transistor and
double quantum dots, Single-dopant
device
[1]
N. Jhonson, G. Yamahata, and A .Fujiwara, High-frequency
breakdown in dynamic tunable-barrier quantum dots, Phys. Rev. Appl. 24, 064045
(2025).
[2]
G Yamahata,
T Shimizu, K Nishiguchi, and A Fujiwara, Scalable parallel single-electron
pumps in silicon with split-source control in the nanoampere regime, Nano
Letters 25, 10202 (2025).
[3]
G. Yamahata
and A. Fujiwara, An ambipolar single-charge pump in silicon, Appl. Phys. Lett.
125, 163502 (2024).
[4]
G. Yamahata
and A. Fujiwara, Advances toward high-accuracy operation of tunable-barrier
single-hole pumps in silicon, J. App. Phys. 135, 014502 (2024).
[5]
S. Nakamura, D. Matsumaru, G. Yamahata, T. Oe,
D.-H. Chae, Y. Okazaki, S. Takada, M. Maruyama, A. Fujiwara, and N.-H. Kaneko,
Universality and multiplication of GHz-operated silicon pumps with ppm-level
uncertainty, Nano Letters 24, 9 (2024).
[6]
A. Fujiwara, G. Yamahata, N. Johnson, S. Nakamura, N.-H. Kaneko, Silicon
Quantum Dot Single-Electron Pumps for the Closure of the Quantum Metrology
Triangle, ECS Transactions 112, 119 (2023).
[7]
G. Yamahata,
N. Johnson, and A. Fujiwara, Coulomb collisions of hot and cold single
electrons in series-coupled silicon single-electron pumps, Phys. Rev. Appl. 20,
044043 (2023).
[8]
S. Nakamura, D. Matsumaru, G. Yamahata, T. Oe, Y. Okazaki, S. Takada, M. Maruyama,
A. Fujiwara, and N.-H. Kaneko, Cryogenic
operation of electromechanical relay for reversal of quantized current
generated by a single-electron pump, IEEE Trans. Inst. Meas. 72, 1502809,
(2023).
[9]
S. P. Giblin, G. Yamahata, A. Fujiwara and
M. Kataoka, Precision measurement of an electron pump at 2 GHz; the frontier of
small DC current metrology, Metrologia 60, 055001 (2023).
[10]
A. Fujiwara, G. Yamahata, N. Johnson,
Device simulator for optimal design of silicon single-electron pumps, 2022
Conference on Precision Electromagnetic Measurements (CPEM 2022) (Wellington,
December 12-16 2022).
[11]
G. Yamahata, Johnson, and A. Fujiwara,
Understanding the mechanism of tunable-barrier single-electron pumping,
Mechanism crossover and optimal accuracy, Phys. Rev. B 103, 245306 (2021).
[12]
S. P. Giblin, E. Mykkänen, A. Kemppinen, P. Immonen, A. J. Manninen,
M. Jenei, M. Möttönen, G. Yamahata,
A. Fujiwara and M. Kataoka, Realisation
of a quantum current standard at liquid helium temperature with sub-ppm
reproducibility, Metrologia 57, 025013
(2020).
[13]
(Published in Nature
Nanotech. !)G. Yamahata, S. Ryu, N. Johnson, H-S.
Sim, A. Fujiwara, and M. Kataoka, Picosecond coherent electron motion in a
silicon single-electron source, Nature Nanotechnology 14, 1019–1023 (2019).
[14]
N. Johnson, G. Yamahata, and A. Fujiwara,
Measurement of the curvature and height of the potential barrier for a dynamic
quantum dot, Appl. Phys. Lett. 115, 162103 (2019).
[15]
S. Giblin, A. Fujiwara, G. Yamahata, M. H.
Bae, N. Kim, A. Rossi, M. Möttönen, and M. Kataoka,
Evidence for universality of tunable-barrier electron pumps, Metrologia 56,
044004 (2019).
[16]
G. Yamahata, S. P. Giblin, M. Kataoka, and
T. Karasawa, and A. Fujiwara, High-accuracy current generation in the
nanoampere regime from a silicon single-trap electron pump, Scientific Reports
7, 45137 (2017).
[17]
G. Yamahata, S. P. Giblin, M. Kataoka, T.
Karasawa, and A. Fujiwara, Gigahertz single-electron pumping in silicon with an
accuracy better than 9.2 parts in 107, Appl. Phys. Lett. 109, 013101
(2016).
( See http://www.npl.co.uk/news/record-speed-and-accuracy-achieved-with-single-electron-pumps
)
[18]
G. Yamahata, T. Karasawa, and A. Fujiwara,
Gigahertz single-hole transfer in Si tunable-barrier pumps, Appl. Phys. Lett.
106, 023112 (2015).
[19]
G. Yamahata, K. Nishiguchi, and A.
Fujiwara, Gigahertz single-trap electron pumps in silicon, Nat. Commun. 5, 5038
(2014).
[20]
G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy
evaluation and mechanism crossover of single-electron transfer in Si
tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014).
[21]
G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron
pumps with tunable donor binding energy, Nano Lett. 12 763−768
(2012).
[22] G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy
evaluation of single-electron huttle transfer in Si
nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98,
222104 (2011).
[23] S. Miyamoto, K.
Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an
oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82,
033303 (2010).
[24] S. Miyamoto, K.
Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few
electrons in a single-electron ratchet using silicon nanowire
metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 93,
222103 (2008).
[25] A. Fujiwara, K.
Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron
ratchet using silicon nanowire metal-oxide-semiconductor field-effect
transistor: Appl. Phys. Lett. 92, 042102 (2008).
[26] H. W. Liu, T.
Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport
through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).
[27]
M. A. H. Khalafalla, Y.
Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled
acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).
[28] A. Fujiwara, H. Inokawa,
K. Yamazaki, H. Namatsu, Y. Takahashi, N. M.
Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable
barriers using silicon nanowire metal-oxide-semiconductor field-effect
transistor, Appl. Phys. Lett. 88 053121 (2006).
[29]
A.
Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due
to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett. 84, 1323-1325 (2004).
[30]
A.
Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon
charge-coupled device, Nature 410, 560-562 (2001).
Single-electron detection and counting
statistics / stochastic resonance
[2]
K. Chida, A. Fujiwara, and K. Nishiguchi, Seebeck
effect in a nanometer-scale dot in a Si nanowire observed with electron
counting statistics, Appl. Phys. Lett. 121, 183501 (2022). (Cover page !)
[3]
K Nishiguchi, K Chida, and A Fujiwara, Single-electron manipulation
in a attofarad-capacitor, ECS Transactions 104, 33 (2021).
[4]
(Published in Nature Com. !) K Chida, S. Desai, K Nishiguchi, and A
Fujiwara: Power generator driven by Maxwell's demon, Nat. Commun.
8, 15310 (2017).
[5]
K Chida, K Nishiguchi, G Yamahata, H
Tanaka, A Fujiwara: Thermal-noise suppression in nano-scale Si field-effect
transistors by feedback control based on single-electron detection, Appl. Phys. Lett. 107, 073110,
2015 (2015).
[6]
P. A. Carles, K Nishiguchi, and A Fujiwara: Deviation from the law
of energy equipartition in a small dynamic-random-access memory, Jpn. J. Appl. Phys. 54, 06FG03 (2015).
[7]
K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal
noise, Nanotechnology 25, 275201 (2014).
[8] K. Nishiguchi, H.
Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele, Wide-bandwidth
charge sensitivity with a radio-frequency field-effect Transistor, Appl. Phys.
Lett. 103, 143102 (2013).
[9] K. Nishiguchi and
A. Fujiwara: Detecting signals buried in noise via nanowire transistors
using stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).
[10] K. Nishiguchi and
A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire
Transistors, Jpn. J. Appl. Phys. 50, 06GF04
(2011)..
[11]
K. Nishiguchi, N. Clement, T. Yamaguchi, and A.
Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared
floating gate, APPLIED PHYSICS LETTERS 94,
163106 (2009).
[12]
K. Nishiguchi and A. Fujiwara: Single-electron
counting statistics and its circuit application in nanoscale field-effect
transistors at room temperature, Nanotechnology
20 175201 (2009).
Functional nanotransistors,
sensors, molecular electronics
[1]
S. Grall, I. Madrid, A. Dufour, H. Sands, M. Kato, A. Fujiwara, S.
H. Kim, A. Chovin, C. Demaille,
and N. Clement, Quantum bioelectrochemical (QBIOL)
software based on point stochastic processes, Communications Chemistry 8, 210
(2025).
[2]
I. M. Madrid, Z. Zheng, C. Gerbelot, A.
Fujiwara, S. Li, S. Grall, K. Nishiguchi, S. H. Kim, A. Chovin, C. Demaille, and N. Clement, Ballistic Brownian motion of
nanoconfined DNA, ACS nano, 17, 17031 (2023).
[3]
S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, S. H. Kim, and N.
Clement, Single-Cell Electrochemical Aptasensor
Array, ACS Sens. 8, 2921 (2023).
[4]
K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. Van Der Zant, and
G. A. Steele, Room-temperature several-hundred-of-megahertz charge sensing with
single-electron resolution using a silicon transistor, Appl. Phys. Lett. 122,
043502 (2023).
[5]
K. Nishiguchi, H. Yamaguchi, and A. Fujiwara, Subgigahertz
Multilayer-Graphene Nanoelectromechanical System Integrated with a
Nanometer-Scale Silicon Transistor Driven by Reflectometry, Phys. Rev. Appl.
19, L011003 (2023).
[6]
S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, T. Fujii, S–H. Kim,
N. Clement, Redox-labelled
electrochemical aptasensors with nanosupported
cancer cells, Biosensors and Bioelectronics 216, 114643 (2022).
[7]
M Razanoelina, M Hori, A Fujiwara, and Y
Ono, Critical conductance of two-dimensional electron gas in
silicon-on-insulator metal-oxide-semiconductor field-effect transistor, Appl.
Phys. Express 14, 104003 (2021).
[8]
(Published in Nature Com
!) H. Firdaus, T. Watanabe, M. Hori, D.
Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Electron aspirator using
electron–electron scattering in nanoscale silicon, Nature Communications 9,
4813 (2018)
[9]
(Published in Nature Materials !) R. Sivakumarasamy,
R. Hartkamp, B. Siboulet,
J.-F. Dufreche, K. Nishiguchi, A. Fujiwara,
and N. Clément, Selective-layer-free Blood Serum Ionogram
based on Ion-specific Interactions with a Nanotransistor,
Nature Materials 17 464 (2018).
[10]
N. Clement and A. Fujiwara, Molecular diodes: Breaking the Landauer
limit, Nat. Nanotech. 12, 725 (2017).
[11] N. Clément, K. Nishiguchi, J. F. Dufreche,
D. Guerin, A. Fujiwara, and D. Vuillaume,
Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive
Field-Effect Transistors, Nano Lett. 13, 3903−3908 (2013).
[12] I. Mahboob, K.
Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an
Electromechanical Resonator , Phys. Rev. Lett. 110 127202 (2013).]
[13] N. Clément, K.
Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara,
and D. Vuillaume, A silicon nanowire ion-sensitive
field-effect transistor with elementary charge sensitivity, Appl. Phys. Lett. 98, 014104 (2011).
[14] I. Mahboob, E.
Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature
Communications 2, 198 doi:10.1038/ncomms1201 (2011).
[15]
N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire
transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).
Silicon quantum well and optical properties
[1]
J. Noborisaka, T. Hayashi, A. Fujiwara,
and K. Nishiguchi: Valley splitting by extended zone effective mass
approximation incorporating strain is silicon, J. Appl. Phys. 135, 204302
(2024).
[2]
J. Noborisaka, K. Nishiguchi, A. Fujiwara:
Electric tuning of direct-indirect optical transitions in silicon, Scientific
Reports 4, 6950 (2014).
[3]
J. Noborisaka, K.
Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara:
Strong Stark effect in electroluminescence from phosphorous-doped
silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl.
Phys. Lett. 98,
033503 (2011).
[4]
J. Noborisaka, K.
Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara:
Tunneling spectroscopy of electron subbands in thin
silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl.
Phys. Lett. 96, 112102 (2010).
Physics of
Si 2DEG and valley physics in collaboration
with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina
(Univ. of Bath) , Dr. Vincent Renard (CEA)
[1]
V. T. Renard, B. A. Piot, X. Waintal, G.
Fleury, D. Cooper, Y. Niida, D. Tregurtha, A.
Fujiwara, Y. Hirayama and K. Takashina, Valley
polarization assisted spin polarization in two dimensions, Nat. Commun. 6, 7230
(2015).
[2] V. T. Renard, I.
Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic behaviour in
SOI quantum wells with strong intervalley scattering, Scientific reports | 3 :
2011 | DOI: 10.1038/srep02011 (2013).
[3] K. Takashina, Y. Niida, V. T.
Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y. Hirayama, Phys.
Rev. B 88, 201301(R) (2013).
[4] Y. Niida, K. Takashina, Y. Ono, A.
Fujiwara and Y. Hiryama: Electron and hole mobilities at a Si/SiO2 interface with
giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).
[5] K. Takashina,
Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K.
Muraki, and Y.Hirayama: Impact of Valley Polarization
on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403
(2011).
[6] K. Takashina,
K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki:
Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104
(2009).
[7] Y. Niida,
K. Takashina, A. Fujiwara, T. Fujis awa, and Y. Hirayama: Spin splitting of
upper electron subbands in a SiO2/Si(100)/SiO2
quantum well with in-plane magnetic field, APPLIED
PHYSICS LETTERS 94, 142101 (2009).
Invited talk:
[1]
A.
Fujiwara, Silicon single-electron devises for metrology applications,
Europe/Asia Summer school on Energy, Bioengineering and Quantum & Molecular
technologies (EURALIMMS School 2025) (June 15-20, 2025, Porquerolles,
France)
[2]
A.
Fujiwara, Silicon nanoelectronics for quantum metrology, Europe/Asia Workshop
on Energy, Bioengineering and Quantum & Molecular technologies (EURALIMMS
2024) (October 10-11, Tokyo, Japan)
[3]
Keynote(Plenary)
A. Fujiwara et al., 50th Int. Conf. on Micro and Nano Engineering (MNE)
(September 16-19, Montpellier, France).
[4]
A.
Fujiwara, G. Yamahata, N. Johnson, S. Nakamura, and
N. -H. Kaneko, Silicon quantum dot single-electron pumps for the closure of the
quantum metrology triangle, 244th The Electrochemical Society (ECS) Meeting
(Oct. 8-12, 2023, Gothenburg, Sweden).
[5]
A.
Fujiwara, and G. Yamahata, Metrology application of
silicon single-electron pumps, 2023 Asia-Pacific Workshop on Advanced
Semiconductor Devices (AWAD 2023) (Jul. 10-11, 2023, Yokohama, Japan).
[6]
A.
Fujiwara, G. Yamahata, N. Johnson, Electron
manipulation using a silicon dynamic quantum dot, Workshop for the
single-electron quantum technology, (Nov. 25-26, 2022, Buyeo, Korea).
[7]
A.Fujiwara, G. Yamahata, N.
Johnson, Electron dynamics and device simulation of silicon single-electron
pumps, Single-Electron Quantum Optics for Metrology Workshop (SEQUOIA Meeting)
(October 11-12, 2021, Online, France).
[8]
A.
Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim,
and M. Kataoka, Fast electron dynamics in a silicon dynamic quantum dot, The
International Workshop on Computational Nanotechnology (IWCN) (May 24 –June 6, 2021, Online, Korea).
[9]
A.
Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim,
and M. Kataoka, Fast electron dynamics in a silicon dynamic quantum dot, Int.
Workshop on Cool Electrons in Flatlands (CEF2020) (June 15-24, 2020, Catania,
Italy, held as virtual workshop)
[10]
A.
Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE
Nanotechnology Materials and Devices Conference (IEEE NMDC2019) (Oct.. 27-30,
2019, Stockholm, Sweden)
[11]
A.
Fujiwara, Ultimate electronics with silicon nanowire MOSFETs, Workshop on
Innovative Nanoscale Devices and Systems (WINDS) (Nov. 25-30, 2018, Hawaii,
USA)
[12]
A.
Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi,
Tunable-barrier electron pump for quantum current standards and
information-to-energy converters China-Japan International Workshop on Quantum
Technologies, QTech2018 (Aug 23-24, 2018, Hefei, China).
[13]
A.
Fujiwara, Ultimate electronics with control of single electrons, 7th Summer
School on Semiconductor/Superconducting Quantum Coherence Effect and Quantum
Information (August 27-29, 2017, Shuzenji, Japan).
[14]
A.
Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida,
Ultimate electronics with control of single electrons, EM-NANO2017 (June 18-21,
2017, Fukui, Japan).
[15]
A.
Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida,
Ultimate Single Electronics with Silicon Nanowire MOSFETs, 2017 Silicon
Nanoelectronics Workshop (June 4-5, 2017, Kyoto, Japan).
[16]
A.
Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin,
and M. Kataoka, Gigahertz single-electron pump for quantum current
standard, 33rd ICPS (Beijing, 31 July- 5
August, 2016)
[17]
A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump
towards a Representation of the New Ampere, 2015 SSDM (Sapporo, 27-30
September, 2015).
[18]
A. Fujiwara, G. Yamahata, J. Noborisaka, and K.
Nishiguchi, Nanoscale Silicon MOSFET for Metrology and Valleytronics
Applications, 2015 UK-Japan Silicon Nanoelectronics and Nanotechnology
Symposium (Southampton, 9-10 July, 2015).
[19]
(Plenary talk) A. Fujiwara,
Silicon single-electron devices for ultimate electronics, EURAMET DC &
Quantum Metrology Meeting (Bern, 27-29 May 2015)
[20]
A.
Fujiwara, K. Nishiguchi, G. Yamahata, Silicon
nanowire MOSFETs for diverse applications, The 6th IEEE International
Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)
[21] (Plenary talk) A. Fujiwara, Silicon-based
nanodevices for diverse applications, 39th Int. Conf. on Micro and
Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).
[22] A. Fujiwara, G. Yamahata,
K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon
Single-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012
Silicon Nanoelectronics Workshop (June 2012, Hawaii, USA).
[23] A. Fujiwara, K. Nishiguchi, and Y. Ono:
Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon
Hybrid Nanotechnologies for ‘More-than-MooreE& ‘Beyond
CMOSEEra (March 1 E 2, 2010, Southampton, UK),
Program and Abstracts, pp. 19 E20.)
[24] A. Fujiwara, K. Nishiguchi and Y. Ono:
Single-electron devices based on silicon nanowire MOSFETs, Trends in
Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)
[25] A. Fujiwara, K. Nishiguchi and Y. Ono:
Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices,
International Conference on Nanoscience and Technology (ChinaNANO)
2009, p. 50-51 (September 1-3, 2009,Beijing)
[26] A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices
and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).
[27] A. Fujiwara and Y. Takahashi: Si
nano-devices using an electron-hole system, 2nd
International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).
[28] A. Fujiwara and Y. Takahashi: Si
nano-devices using an electron-hole system, Proceedings
of 5th Europian Workshop on Low Temperature
Electronics, (Journal de Physiqye IV, 12,
No.Pr3), Ed. F Balestra, (WOLTE-5)
pp. Pr3-85-Pr3-92 (2002.6).
[29] A. Fujiwara, K. Yamazaki, and Y. Takahashi:
Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp.
278-279 (2001.10).
[30] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase Single-electron devices: recent attempts
towards high performance and functionality, 1999
Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).
[31] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon
single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).
[32] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon
single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation,
Physics and Device Application of Quantum Dot Structures (QDS98), (1998).
Selected first-author papers
[1]
A.
Fujiwara, G. Yamahata,
N. Johnson, S. Nakamura, N.-H. Kaneko, Silicon Quantum Dot Single-Electron
Pumps for the Closure of the Quantum Metrology Triangle, ECS Transactions 112,
119 (2023).
[2] A. Fujiwara, K. Nishiguchi, and Y. Ono:
Nanoampere charge pump by
single-electron ratchet using silicon nanowire metal-oxide-semiconductor
field-effect transistor: Applied Physics Letters 92, 042102 (2008).
[3]
A. Fujiwara, H. Inokawa,
K. Yamazaki, H. Namatsu, Y. Takahashi, N. M.
Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable
barriers using silicon nanowire metal-oxide-semiconductor field-effect
transistor, Applied Physics Letters 88 053121 (2006).
[4]
A. Fujiwara, N. M. Zimmerman, Y. Ono, and
Y. Takahashi: Current quantization due to single-electron transfer in Si-wire
charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).
[5] A. Fujiwara, S. Horiguchi, M. Nagase, and
Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese
Journal of Applied Physics Part 1-Regular Papers Short Notes & Review
Papers 42, 2429-2433 (2003).
[6] A. Fujiwara, K. Yamazaki, and Y. Takahashi:
Detection of single charges and their generation-recombination dynamics in Si
nanowires at room temperature, Applied Physics Letters 80,
4567-4569 (2002).
[7] A. Fujiwara and Y. Takahashi: Mechanism of
single-charge detection using electron-hole system in Si-wire transistors, Japanese
Journal of Applied Physics Part 1-Regular Papers Short Notes & Review
Papers 41, 1209-1213 (2002).
[8] A.
Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon
charge-coupled device, Nature 410, 560-562 (2001).
[9] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase:
Double-island single-electron devices - A useful unit device for
single-electron logic LSI's, IEEE Transactions on Electron Devices 46,
954-959 (1999).
[10] A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects
of parasitic metal-oxide-semiconductor field-effect transistors on Si
single-electron transistors, Japanese Journal of Applied Physics Part
1-Regular Papers Short Notes & Review Papers 37, 3257-3263
(1998).
[11]
A. Fujiwara, Y. Takahashi, and K. Murase:
Observation of single electron-hole recombination and photon-pumped current in
an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).
[12] A. Fujiwara, Y. Takahashi, K. Murase, and
M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si
Single-Electron Transistor with Satellite Si Islands, Applied Physics
Letters 67, 2957-2959 (1995).
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa, 243-0198 JAPAN