Akira Fujiwara, Dr. Eng.


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Biography

説明: Fujiwara-photoAkira Fujiwara was born in Japan, 1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989,1991, and 1994, respectively. His Ph.D. thesis was entitled "Resonant electron capture in semiconductor quantum wells". In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. He was a guest researcher at National Institute of Standards and Technology (NIST), Gaithersburg, USA during 2003-2004. Sine 2006, He is a group leader of Nanodevcies Research Group, NTT BRL. Since 2007, He is a Distinguished Technical Member, NTT BRL. Since 2012, he also serves as an executive Manager of Physical Science Laboratory. He is a member of the Japan Society of Applied Physics and IEEE.

Research Interests

Physics and application of low-dimensional structures

Silicon nanostructures and their application to nanodevices

Single-electron devices and their applications

Education

1991 M.S. in Applied Physics, The University of Tokyo

1994 Ph.D. in Applied Physics, The University of Tokyo

1989 B.S. in Applied Physics, The University of Tokyo

Employment

2012-  Manager of Physical Science Laboratory, NTT BRL

2007-  Distinguished technical member, NTT BRL

2006-  Group leader of Nanodevices Research Group, NTT BR

1996  NTT Basic Research Laboratories (BRL)

1994  NTT LSI Laboratories

Professional Activities

2013.4-2014.3 Visiting Professor, Hokkaido University

2012 Examiner of Ph. D. thesis, UNSW

2011.4-2012.3  Japanese Society of Applied Physics(JSAP) Executive Director

2010.4-2011.3  Japanese Society of Applied Physics(JSAP) Director

2008 & 2011  Examiner of Ph. D. thesis, Tokyo Tech.

2003.7-2004.7 Guest researcher at the National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA

2007.8  Lecturer(Non-Full-time), The University of Tokyo

Awards and Honors

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2014 (co-author)

Young Scientist Award, the Minister of MEXT (Ministry of Education, Culture, Sports, Science, and Technology), 2006

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2006 (co-author)

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2003 (1st  author)

SSDM (International Conference on Solid State Devices and Materials) Paper Award, 1999 (co-author)

SSDM (International Conference on Solid State Devices and Materials) Young Researcher Award, 1998

 

Committee/International Conference Activities

Program vice chair of Int. Conf. on Solid State Devices and Materials (SSDM2014), Tsukuba, Sept. 2014.

Co-chair of International Symposium on Nanoscale Transport and Technology ISNTT 2013, Atsugi, Nov. 2013.

Program vice chair of Int. Conf. on Solid State Devices and Materials (SSDM2013), Fukuoka, Sept. 2013.

Program vice chair of APPC12the 12th Asia Pacific Physics Conference, Makuhari, Japan, July, 2013.2007.8 

Co-chair of Workshop on Innovative Devices and Systems (WINDS) , Hawaii, USA, Dec. 2-7 2012.

 Special committee of Emerging Research Devices WG, STRJ (Semiconductor Technology Roadmap Committee of Japan) 2008.10-

 

Government Fund

2011-2014 The Funding Program for Next Generation World-Leading Researchers (NEXT Program), JSPS

 

CV (as of 2014.7.1)

Curriculum Vitae (CV) incl. publication lists etc.

 

Publication data  (as of 2014.10.1)

http://www.researcherid.com/rid/A-6648-2012

Total: 146 papers, Average Citations 15.53  h-index 26

First author: 17 paper, Average Citations 26.7  h-index 11

 

Google Scholor Citations

 

Recent selected papers/international conferences (2008~)

Single-electron transfer and dynamics

[1]       (Published in Nature Communications!) G. Yamahata, K. Nishiguchi, and A. Fujiwara, Gigahertz single-trap electron pumps in silicon, Nat. Commun. 5, 5038 (2014).

[2]       G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014).

[3]       G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nano Lett. 12 763−768 (2012).

[4]       G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron huttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 222104 (2011).

[5]       S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).

[6]       S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, APPLIED PHYSICS LETTERS 93, 222103 (2008).

[7]       A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: APPLIED PHYSICS LETTERS 92, 042102 (2008).

Tunable-barrier single-electron transistor and double quantum dots

[1]      H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).

[2]      A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

 

Silicon quantum well and  optical properties

[1]      (Published in Scientific Reports !) J. Noborisaka, K. Nishiguchi, A. Fujiwara: Electric tuning of direct-indirect optical transitions in silicon, Scientific Reports 4, 6950 (2014).

[2]      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara: Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).

[3]      J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 96, 112102 (2010).

 

Single-electron detection and counting statistics / stochastic resonance

[1]      (Published in Nanotechnology !) K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal noise, Nanotechnology 25, 275201 (2014).

[2]      K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele, Wide-bandwidth charge sensitivity with a radio-frequency field-effect Transistor, Appl. Phys. Lett. 103, 143102 (2013).

[3]      K. Nishiguchi and A. Fujiwara: Detecting signals buried in noise via nanowire transistors using stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).

[4]      K. Nishiguchi and A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire Transistors, Jpn. J. Appl. Phys. 50, 06GF04 (2011)..

[5]      K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).

[6]      K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).

 

High-sensitive charge sensor application

[1]      N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors, Nano Lett. 13, 3903−3908 (2013).

[2]      I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an Electromechanical Resonator , Phys. Rev. Lett. 110 127202 (2013).

[3]      I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature Communications 2, 198 doi:10.1038/ncomms1201 (2011).

[4]      N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).

 

 

Single-dopant device

[1]      G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nano Lett. 12 763−768 (2012).

[2]      M. A. H. Khalafalla, Y. Ono, G. P. Lansbergen, and A. Fujiwara: Low temperature carrier transport in p-channel silicon-on-insulator transistors doped with indium, J. Appl. Phys. 110 014512 (2011);

[3]      M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors, APPLIED PHYSICS LETTERS 94, 223501 (2009).

[4]      M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).

 

 Physics of  Si 2DEG and valley physics in collaboration with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina (Univ. of Bath) 

[1]      V. T. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic behaviour in SOI quantum wells with strong intervalley scattering, Scientific reports | 3 : 2011 | DOI: 10.1038/srep02011 (2013).

[2]      K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y. Hirayama, Phys. Rev. B 88, 201301(R) (2013).

[3]      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hiryama: Electron and  hole mobilities at a Si/SiO2 interface with giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).

[4]      K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama: Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403 (2011).

[5]      K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki: Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104 (2009).

[6]      Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, and Y. Hirayama: Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICS LETTERS 94, 142101 (2009).

 

Selected first-author papers

[1]      A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: APPLIED PHYSICS LETTERS 92, 042102 (2008).

[2]      A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

[3]      A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).

[4]      A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42, 2429-2433 (2003).

[5]      A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80, 4567-4569 (2002).

[6]      A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 1209-1213 (2002).

[7]      A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

[8]      A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Double-island single-electron devices - A useful unit device for single-electron logic LSI's, IEEE Transactions on Electron Devices 46, 954-959 (1999).

[9]      A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263 (1998).

[10]  A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).

[11]  A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67, 2957-2959 (1995).

Invited talk:

[1]      A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse applications, The 6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)

[2]      (Plenary talk) A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf. on Micro and Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).

[3]      A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon Single-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics Workshop (June 2012, Hawaii, USA).

[4]      A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-MooreE& ‘Beyond CMOSEEra (March 1 E 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 E20.)

[5]      A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)

[6]      A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)

[7]      A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).

[8]      A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).

[9]      A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).

[10]  A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).

[11]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase  Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).

[12]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).

[13]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).

 


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Last modified:Oct
13, 2014