Akira Fujiwara, Dr. Eng.
Japanese version is
here.
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Biography
Biography
Akira Fujiwara was born in Japan,
1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The
University of Tokyo, Japan, in 1989,1991, and 1994, respectively. His Ph.D.
thesis was entitled "Resonant electron capture in semiconductor quantum
wells".In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone
(NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. Since
1994, he has been engaged in research on silicon nanostructures and their
application to single-electron devices. He was a guest researcher at National
Institute of Standards and Technology (NIST), Gaithersburg, USA
during 2003-2004. He is a group leader of Nanodevcies
Research Group, NTT BRL. Since 2007, He is a Distinguished
Technical Member, NTT BRL. He received SSDM Young Researcher Award in 1998,
SSDM Paper Award in 1999, and Japanese Journal of Applied Physics (JJAP) Paper
Awards in 2003 and 2006. He was awarded Young Scientist Award from the Minister
of MEXT (Ministry of Education, culture, sports, science, and technology) in
2006. He is a member of the Japan Society of Applied Physics and IEEE.
Curriculum
Vitae (CV) incl. publication lists etc.
Research Interests
- Single-electron
tunneling devices
- Quantum
effect in silicon nanostructures
NTT Basic Research Laboratories
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa, 243-0198 JAPAN
FAX:+81-462-40-4317
Last modified:Feb 9, 2009
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