Akira Fujiwara's HOME PAGE

Akira Fujiwara, Dr. Eng.

Japanese version is here.

Biography

Akira Fujiwara was born in Japan, 1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989,1991, and 1994, respectively. His Ph.D. thesis was entitled "Resonant electron capture in semiconductor quantum wells". In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. He was a guest researcher at National Institute of Standards and Technology (NIST), Gaithersburg, USA during 2003-2004. Sine 2006, He is a group leader of Nanodevcies Research Group, NTT BRL. Since 2007, He is a Distinguished Technical Member, NTT BRL. Since 2012, he also serves as an executive Manager of Physical Science Laboratory. He is a member of the Japan Society of Applied Physics and IEEE.

Research Interests

Physics and application of low-dimensional structures

Silicon nanostructures and their application to nanodevices

Single-electron devices and their applications

Education

1991 M.S. in Applied Physics, The University of Tokyo

1994 Ph.D. in Applied Physics, The University of Tokyo

1989 B.S. in Applied Physics, The University of Tokyo

Employment

2007- Distinguished technical member, NTT BRL

2006- Group leader of Nanodevices Research Group, NTT BRＬ

1996 NTT Basic Research Laboratories (BRL)

1994 NTT LSI Laboratories

Professional Activities

2011.4-2012.3 Japanese Society of Applied Physics(JSAP)　Executive Director

2010.4-2011.3 Japanese Society of Applied Physics(JSAP)　Director

2008.10- Special committee of Emerging Research Devices WG, STRJ (Semiconductor Technology Roadmap Committee of Japan)

2003.7-2004.7 Guest researcher at the National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA

2007.8 Lecturer(Non-Full-time), The University of Tokyo

Awards and Honors

Young Scientist Award, the Minister of MEXT (Ministry of Education, Culture, Sports, Science, and Technology), 2006.

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2006

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2003

SSDM (International Conference on Solid State Devices and Materials) Paper Award, 1999

SSDM (International Conference on Solid State Devices and Materials) Young Researcher Award, 1998

Government Fund

2011-2014 The Funding Program for Next Generation World-Leading Researchers (NEXT Program), JSPS

Curriculum Vitae (CV) incl. publication lists etc.

Recent interest and selected papers (2008~)

Single-electron transfer and dynamics

[1] G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron huttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 222104 (2011).

[2] S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).

[3] S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, APPLIED PHYSICS LETTERS 93, 222103 (2008).

[4] A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: APPLIED PHYSICS LETTERS 92, 042102 (2008).

Tunable-barrier single-electron transistor and double quantum dots

[1] H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).

[2] A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

Silicon quantum well and its optical properties

[1] J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara: Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).

[2] J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 96, 112102 (2010).

Single-electron detection and related phenomenon

[1] K. Nishiguchi, Y. Ono and A. Fujiwara: Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 98, 193502 (2011)...

[2] N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).

[3] K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).

[4] K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).

Single-dopant device

[1] G. P. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nanoletters in press.

[2] M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors, APPLIED PHYSICS LETTERS 94, 223501 (2009).

[3] M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).

Physics of Si 2DEG and valley physics in collaboration with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina (Univ. of Bath)

[1] K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama: Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403 (2011).

[2] K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki: Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104 (2009).

[3] Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, and Y. Hirayama: Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICS LETTERS 94, 142101 (2009).

Selected first-author papers

[1] A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: APPLIED PHYSICS LETTERS 92, 042102 (2008).

[3] A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).

[4] A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42, 2429-2433 (2003).

[5] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80, 4567-4569 (2002).

[6] A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 1209-1213 (2002).

[7] A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

[8] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Double-island single-electron devices - A useful unit device for single-electron logic LSI's, IEEE Transactions on Electron Devices 46, 954-959 (1999).

[9] A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263 (1998).

[10] A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).

[11] A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67, 2957-2959 (1995).

Invited talk:

[1] Invited talk scheduled for 2012 Silicon Nanoelectronics Workshop (Dec 2012, Hawaii, USA)

[2] A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-MooreE& ‘Beyond CMOSEEra (March 1 E 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 E20.)

[3] A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)

[4] A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)

[5] A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).

[6] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).

[7] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).

[8] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).

[9] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).

[10] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).

[11] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).

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Last modified:Jan 30, 2012