Akira Fujiwara's HOME PAGE

Akira Fujiwara, Dr. Eng.

Japanese version is here.

Biography

Akira Fujiwara was born in Japan, 1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989,1991, and 1994, respectively. His Ph.D. thesis was entitled "Resonant electron capture in semiconductor quantum wells".In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. Since 1994, he has been engaged in research on silicon nanostructures and their application to single-electron devices. He was a guest researcher at National Institute of Standards and Technology (NIST), Gaithersburg, USA during 2003-2004. He is a group leader of Nanodevcies Research Group, NTT BRL. Since 2007, He is a Distinguished Technical Member, NTT BRL. He received SSDM Young Researcher Award in 1998, SSDM Paper Award in 1999, and Japanese Journal of Applied Physics (JJAP) Paper Awards in 2003 and 2006. He was awarded Young Scientist Award from the Minister of MEXT (Ministry of Education, culture, sports, science, and technology) in 2006. He is a member of the Japan Society of Applied Physics and IEEE.

Curriculum Vitae (CV) incl. publication lists etc.

Research Interests

Single-electron tunneling devices
Quantum effect in silicon nanostructures

NTT Basic Research Laboratories
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa, 243-0198 JAPAN
FAX:+81-462-40-4317

Last modified:Feb 9, 2009

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