Our research target is to realize nanometer-scale devices with novel concept and ultimate performance such as ultra-low power, high functionality, high sensitivity, and high precision for future science and ICT society.
New member Chloe Salhani joins our group!
We aim to achieve high-accuracy control of a single electron using silicon single-electron devices that can transfer a single electron with high accuracy, and to realize new devices that take advantage of its quantum mechanical properties. We are working on observation of ultrafast coherent oscillations of single electrons, control of single-electron wave packets in quantum Hall systems, and collision experiments of single hot electrons.
Fast and accurate Si single-electron pumps with a dynamical quantum dot with tunable barriers are promising for the application to quantum current standards and the quantum metrology triangle (QMT) experiments. We have been promoting collaborations with National Metrology Institutes in Europe [Euramet e-SI-Amp] and Japan [JSPS KAKENHI S (Quantum Standards and Ultimate Precision Measurements Based on Single Electrons) ].
Single electrons are manipulated and monitored using Si nanometer-scale transistors at room temperature. These functions would enable high-sensitivity charge sensor as well as circuits using one electron as one bit of information.
We are studying information thermodynamic concept such as Maxwell’s demon and Landauer’s principle to achieve extreme energy efficient operation of silicon nanodevices.
We are exploring new functionalities of silicon devices using valley degrees of freedom. At the special silicon interface, valleys that are independent in bulk silicon are strongly coupled and exhibit unusual properties such as direct optical transitions in silicon. Incorporating this property into silicon devices enables gate control of indirect-to-direct optical transitions in silicon.
Exchange interactions in ferromagnetic semiconductors exhibit various phenomena induced by coupling with charges, photons, and phonons. There are still many unexplored domains in the field of ferromagnetic semiconductor nanodevices. We are particularly interested in reproducing the fundamental physics of magnetic atoms and the underlying physics beyond it(e.g., quantum critical phenomenon) by manipulating the electronic correlation in nanostructures.
T. Hayashi, Y. Tokura, and K. Nishiguchi
J. Phys. Soc. Jpn. 94, 044001 (2025).C. Salhani, K. Chida, T. Shimizu, T. Hayashi, and K. Nishiguchi
Phys. Rev. Applied 23, L021001 (2025).H. M. Nayem, M. Hori, K. Nishiguchi, and Y. Ono
Appl. Phys. Lett. 126, 083501 (2025).C. Salhani, K. Chida, T. Shimizu, T. Hayashi, K. Nishiguchi
arXiv:2501.16721 (2025).T. Hayashi, H. Kageshima, Y. Tokura, J. Noborisaka, and K. Nishiguchi
Phys. Status Solidi B 2400531 (2024).N. Johnson, G. Yamahata, and A. Fujiwara
arXiv:2410.08932 (2024).N. Ahmed, M. Razanoelina, M. Hori, A. Fujiwara, and Y. Ono
Applied Physics Express 17 064003 (2024).G. Yamahata and A. Fujiwara
Applied Physics Letters 125, 163502 (2024). (arXiv:2408.01223)K. Nishiguchi and G. Yamahata
IEEE Electron Device Letters, 45, 7 (2024).J. Noborisaka, T. Hayashi, A. Fujiwara, and K. Nishiguchi
Journal of Applied Physics, 135, 204302 (2024).G. Yamahata and A. Fujiwara
J. Appl. Phys. 135, 014502 (2024). (arXiv:2310.00875)S. Nakamura, D. Matsumaru, G. Yamahata, T. Oe, D. Chae, Y. Okazaki, S. Takada, M, Maruyama, A. Fujiwara, and N. Kaneko
Nano Letters 24(1), 9-15 (2024).A. Fujiwara, G. Yamahata, N. Johnson, S. Nakamura, and N.-H. Kaneko
ECS Transactions 112, 119 (2023).G. Yamahata, N. Johnson, and A. Fujiwara
Physical Review Applied 20, 044043 (2023).( arXiv:2303.17242 )J. Noborisaka, T. Hayashi, A. Fujiwara, and K. Nishiguchi
arXiv:2309.05219 (2023).I. Madrid, Z. Zheng, C. Gerbelot, A. Fujiwara, S. Li, S. Grall, K. Nishiguchi, S. H. Kim, A. Chovin, C. Demaille, and N. Clement
ACS Nano (2023).S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, S. H. Kim, and N. Clement
ACS Sens. 8, 8, 2921–2926 (2023).S. Nakamura, D. Matsumaru, G. Yamahata, T. Oe, Y. Okazaki, S. Takada, M. Maruyama, A. Fujiwara, and N. Kaneko
IEEE Transactions on Instrumentation and Measurement 72, 1502809 (2023).S. Giblin, G. Yamahata, A. Fujiwara, and M. Kataoka
Metrologia 60, 055001 (2023).K. Chida, A. Fujiwara, and K. Nishiguchi
Appl. Phys. Lett. 122, 213502 (2023).T. Hayashi, Y. Tokura, and K. Nishiguchi
J. Phys. Soc. Jpn. 92 (3), 034001 (2023).K. Nishiguchi, H. Yamaguchi, and A. Fujiwara
Phys. Rev. Appl. 19 (1), L011003 (2023).K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. van der Zant, and G. A. Steele
Appl. Phys. Lett. 122 (4), 043502 (2023).K. Chida, A. Fujiwara, and K. Nishiguchi
Applied Physics Letters 121(18), 183501 (2022) [Selected as the Cover Art][Selected as a Featured Article]S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, T. Fujii, S. H. Kim, and N. Clement
Biosensors and Bioelectronics 216, 114643 (2022)K. Nishiguchi, K. Chida, and A. Fujiwara
DRAM ECS Transactions 104(4), 33 (2021).M. Razanoelina, M. Hori, A. Fujiwara, and Y. Ono
Appl. Phys. Express 14 (10), 104003 (2021).G. Yamahata, N. Johnson, and A. Fujiwara
Phys. Rev. B 103 (24), 245306 (2021).S. P. Giblin, E. Mykkanen, A. Kemppinen, P. Immonen, A. Manninen, M. Jenei, M. Mottonen, G. Yamahata, A. Fujiwara, and M. Kataoka
Metrologia 57 (2), 025013 (2020).H. Sumikura, K. Hirama, K. Nishiguchi, A. Shinya, and M. Notomi
APL Mater. 8 (3), 031113 (2020).Y. Takahashi, M. Sinohara, M. Arita, A. Tsurumaki-Fukuchi, A. Fujiwara, Y. Ono, K. Nishiguchi, and Hiroshi Inokawa
ECS Transactions 92(4), 47 (2019)G. Yamahata, S. Ryu, N. Johnson, H. S. Sim, A. Fujiwara, and M. Kataoka
Nat. Nanotechnol. 14 (11) 1019-+ (2019)N. Johnson, G. Yamahata, and A. Fujiwara
Appl. Phys. Lett. 115 (16), 162103 (2019)S. P. Giblin, A. Fujiwara, G. Yamahata, M. H. Bae, N. Kim, A. Rossi, M. Mottonen, and M. Kataoka
Metrologia 56 (4), 044004 (2019)C. Emary, L. A. Clark, M. Kataoka, and N. Johnson
Phys. Rev. B 99 (4), 045306 (2019)The Nanodevice Research Group at NTT Basic Research Laboratories (NTT-BRL) is seeking highly motivated researchers for both permanent and postdoctoral positions. We also offer internship opportunities with some support available from NTT-BRL. If you are a student or researcher interested in joining us, please contact Dr. Katsuhiko Nishiguchi for more details. For comprehensive information on recruitment and required documents, please visit the NTT-BRL website.
Feel free to contact us at katsuhiko.nishiguchi[at]ntt.com