Katsuhiko Nishiguchi

Basic Research Laboratories
Physical Science lab.

new-functional nanometer-scale devices

Apr. 1, 2011 -

Katsuhiko Nishiguchi was born in Hiroshima, Japan　in 1975. He received the B.E., M.E., and Ph. D in electrical engineering in 1998, 2000, and 2002, respectively, from Tokyo Institute of Technology, Tokyo, Japan. Since joining NTT Basic Research Laboratories in 2002, he has been engaged in the research on physics and technology of Si nanometer-scale devices for LSI applications with low power consumption and new functions. He was an invited research 20er at the National Center for Scientific Research (CNRS), France during September 2008.　He received IUPAP Young Author Best Paper Award at the International Conference on Physics of Semiconductors 2000, Graduate Student Award Silver at the Materials Research Society 2000 Fall Meeting, and Young Scientist Award at the Japan Society of Applied Physics00 Spring Meeting in 2000. He is a member of the Japan Society of Applied Physics.

For more information, please read the personal webpage.