Semiconductor Nanostructures Research in Low-Dimensional Nanomaterials Research Group

Japanese page is [here].

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Review:

• Analysis of Strain in Semiconductor Nanoscale Thin Films
  
  A thin silicon nano-overlayer (SNOL) fabricated by oxidation and etch-back on a SIMOX (separation by implantation of oxygen) wafer was investigated by grazing incident X-ray diffraction at incident angles between 0.01 and 0.1° below the critical angle of total reflection (0.18°). We measured {220} reflections by probing the sample with respect to the surface normal and found that the SNOL had finite domains under strain close to the surface. We also found that annealing the sample at 1000°C significantly reduced inhomogeneous strain and increased the size of the domains in the surface region of the SNOL.

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Topics:

• Stability-instability Transition of Reaction Fronts in Thermal Silicon Oxidation
• Position Control of Nanowires Using Catalysts Islands Arranged at Surface Atomic Steps
• Strain Analysis of Si Nanolayers by Ultra-Small-Angle Grazing Incidence X-ray Diffraction
• Real-time Observation of Nanowire Formation by Means of GISAXS
• Arrangement of Au-Si alloy islands at atomic steps
• Semiconductor Nanowires
• Anisotropic Strain for Controlled Growth of Nanostructures
• Semiconductor Surface with Strain Control
• Nanoparticles for Multi-Functionalization of Silicon : A Plug and Play Approach
• Growth of novel single crystalline Si
  
• Decay kinetics of two-dimansional islands and holes on Si(111)
  
• Step wandering induced by homoepitaxy on Si(111)

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Videos*:

Real-time Obseravtions of Nanostructure Formation on Surfaces (applox 4min)

• Large Size (720x480 )
  
• Small Size (360x240)
  
• Outline (in Japanese)

*To view Video files, you will require Windows Media Player Ver 9.0 or later.

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