Quantum Solid State Physics Research Group
studies quantum correlated phenomena in semiconductor nanostructures.
Our topics include spin and charge dynamics in quantum dots formed in GaAs, Si or carbon based materials,
electric properties of two-dimensional systems in GaAs/AlGaAs or Si/SiO2 heterostructures and
the characterization of semiconductor surfaces using low-temperature scanning probe microscopies.
Facilities we use include molecular beam epitaxy, electron beam lithography,
low-temperature scanning tunnel microscopy with MBE chamber systems and several cryostats.
News and recent selected publications
21/5/2019, "Determination of g-factor in InAs two-dimensional electron system by capacitance spectroscopy",
H. Irie, T. Akiho and K. Muraki
Appl. Phys. Express 12, 063004 (2019).
21/5/2019, Invited professor: Thibaut Jonckheere
13/5/2019, New internship student: Lee Sanghyun
22/4/2019, "Surface-acoustic-wave resonators with Ti, Cr, and Au metallization on GaAs",
R. Takasu, Y. Sato, T. Hata, T. Akiho, K. Muraki and T. Fujisawa,
Appl. Phys. Express 12, 055001 (2019).
1/4/2019, New Staff: Katsumasa Yoshioka
29/3/2019, Dyon van Dinter finished his internship at NTT.
28/3/2019, "Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration",
T. Akiho, H. Irie, K. Onomitsu and K. Muraki,
Phys. Rev. B 99, 121303(R) (2019).
28/3/2019, "Spectroscopic study on hot-electron transport in a quantum Hall edge channel",
T. Ota, S. Akiyama, M. Hashisaka, K. Muraki and T. Fujisawa,
Phys. Rev. B 99, 085310 (2019).
10/8/2018, gTomonaga-Luttinger-Liquid Nature of Edge Excitations in Integer Quantum Hall Edge Channelsh
M. Hashisaka, T. Fujisawa,
Reviews in Physics, 3, 32-43 (2018).
5/4/2018, gLandau-Zener-Stuckelberg interference in coherent charge oscillations of a one-electron double quantum doth
T. Ota, K. Hitachi & K. Muraki,
Scientific Reports 8, 5491 (2018).
31/3/2018, Moved out: Yukio Takahashi
23/8/2017, Dino Ibrahimagic finished his internship at NTT.
1/7/2017, New Research Specialist: Masayuki Hashisaka
19/4/2017, "Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor"
K. Takase, Y. Ashikawa, G. Zhang, K. Tateno, and S. Sasaki,
Scientific Reports 7, 930 (2017).
1/4/2017, New Post-doctal: Yukio Takahashi
31/3/2017, Moved to Fukuoka Institute of Technology: Kyoichi Suzuki
9/1/2017, New internship student: Dino Ibrahimagic
21/12/2016, Moved to ESPCI: Francois Couedo
12/2016, Harry Parke finished his internship at NTT.
12/2016, Ruben Ohana finished his internship at NTT.
9/12/2016, "Quantum Hall effect in epitaxial graphene with permanent magnets"
F. D. Parmentier, T. Cazimajou, Y. Sekine, H. Hibino, H. Irie, D. C. Glattli, N. Kumada, and P. Roulleau,
Scientific Reports 7, 38393 (2016).
30/11/2016, Paul Brasseur finished his internship at NTT.
10/11/2016, "Engineering quantum spin Hall insulators by strained-layer heterostructures"
T. Akiho, F. Couedo, H. Irie, K. Suzuki, K. Onomitsu, and K. Muraki,
Appl. Phys. Lett. 109, 192105 (2016).
13/10/2016, "Andreev reflection and bound state formation in a ballistic two-dimensional electron gas probed by a quantum point contact"
Hiroshi Irie, Clemens Todt, Norio Kumada, Yuichi Harada, Hiroki Sugiyama, Tatsushi Akazaki, and Koji Muraki,
Phys. Rev. B 94, 155305 (2016).
3/10/2016, New Post-doctal: Ngoc Han Tu
11/7/2016, New internship student: Ohana Ruben
8/7/2016, "Single-edge transport in an InAs/GaSb quantum spin Hall insulator"
Francois Couedo, Hiroshi Irie, Kyoichi Suzuki, Koji Onomitsu, and Koji Muraki,
Phys. Rev. B 94, 035301 (2016).
